JP2011222722A - 窒化物半導体素子 - Google Patents
窒化物半導体素子 Download PDFInfo
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- JP2011222722A JP2011222722A JP2010089842A JP2010089842A JP2011222722A JP 2011222722 A JP2011222722 A JP 2011222722A JP 2010089842 A JP2010089842 A JP 2010089842A JP 2010089842 A JP2010089842 A JP 2010089842A JP 2011222722 A JP2011222722 A JP 2011222722A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 73
- 125000006850 spacer group Chemical group 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000001629 suppression Effects 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 229910002601 GaN Inorganic materials 0.000 description 23
- 230000015556 catabolic process Effects 0.000 description 16
- 239000000203 mixture Substances 0.000 description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001887 electron backscatter diffraction Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
【解決手段】窒化物半導体素子は、シリコン基板101の上に初期層102を介して形成された歪み抑制層110と、歪み抑制層の上に形成された動作層120とを備えている。歪み抑制層110は、第1のスペーサ層111と、第1のスペーサ層の上に接して形成された第2のスペーサ層112と、第2のスペーサ層の上に接して形成された超格子層113とを有している。第1のスペーサ層は、格子定数が第2のスペーサ層よりも大きい。超格子層は、第1の層113A及び第1の層よりも格子定数が小さい第2の層113Bが交互に積層されている。超格子層の平均の格子定数は、第1のスペーサ層の格子定数よりも小さく且つ第2のスペーサ層の格子定数よりも大きい。
【選択図】図1
Description
102 初期層
103 中間層
110 歪み抑制層
111 第1のスペーサ層
112 第2のスペーサ層
113 超格子層
113A 第1の層
113B 第2の層
120 動作層
121 チャネル層
122 バリア層
131 ソース電極
132 ドレイン電極
133 ゲート電極
Claims (9)
- シリコン基板と、
前記シリコン基板の上に初期層を介して形成された歪み抑制層と、
前記歪み抑制層の上に形成された動作層とを備え、
前記歪み抑制層は、
第1の窒化物半導体からなる第1のスペーサ層と、
前記第1のスペーサ層の上に接して形成され、前記第1の窒化物半導体よりも格子定数が小さい第2の窒化物半導体からなる第2のスペーサ層と、
前記第2のスペーサ層の上に接して形成され、第3の窒化物半導体からなる第1の層及び前記第3の窒化物半導体よりも格子定数が小さい第4の窒化物半導体からなる第2の層が交互に積層された超格子層とを有し、
前記超格子層は、平均の格子定数が前記第1のスペーサ層の格子定数よりも小さく且つ前記第2のスペーサ層の格子定数よりも大きいことを特徴とする窒化物半導体素子。 - 前記第1の層は、格子定数が前記第1のスペーサ層よりも小さいことを特徴とする請求項1に記載の窒化物半導体素子。
- 前記第1のスペーサ層は、GaNからなり、
前記第2のスペーサ層は、AlNからなることを特徴とする請求項2に記載の窒化物半導体素子。 - 前記第1の層は、AlxGa1-xN(0<x<0.5)からなり、
前記第2の層は、AlyGa1-yN(x<y≦1)からなることを特徴とする請求項2又は3に記載の窒化物半導体素子。 - 前記第2の層は、AlNからなることを特徴とする請求項4に記載の窒化物半導体素子。
- 前記第1のスペーサ層は、膜厚が40nm以上且つ500nm以下であることを特徴とする請求項3〜5のいずれか1項記載の窒化物半導体素子。
- 前記第2のスペーサ層は、膜厚が5nm以上且つ30nm以下であることを特徴とする請求項3〜6のいずれか1項に記載の窒化物半導体素子。
- 前記第2のスペーサ層は、膜厚が前記第2の層よりも厚いことを特徴とする請求項3〜7のいずれか1項に記載の窒化物半導体素子。
- 前記歪み抑制層は、前記基板と前記動作層との間に複数組形成されていることを特徴とする請求項1〜8のいずれか1項に記載の窒化物半導体素子。
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JP2010089842A JP5689245B2 (ja) | 2010-04-08 | 2010-04-08 | 窒化物半導体素子 |
US12/961,134 US8405067B2 (en) | 2010-04-08 | 2010-12-06 | Nitride semiconductor element |
CN2011100420786A CN102214701A (zh) | 2010-04-08 | 2011-02-17 | 氮化物半导体元件 |
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JP2011222722A5 JP2011222722A5 (ja) | 2013-01-31 |
JP5689245B2 JP5689245B2 (ja) | 2015-03-25 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015192004A (ja) * | 2014-03-28 | 2015-11-02 | 国立大学法人 名古屋工業大学 | ドレイン電流密度・相互コンダクタンスを大幅に改善したリセス構造のmis型ノーマリオフhemt素子 |
US9287369B2 (en) | 2012-03-08 | 2016-03-15 | Kabushiki Kaisha Toshiba | Nitride semiconductor element and nitride semiconductor wafer |
Families Citing this family (5)
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EP2565906A4 (en) * | 2010-04-28 | 2013-12-04 | Ngk Insulators Ltd | EPITACTIC SUBSTRATE AND METHOD FOR PRODUCING THE EPITACTIC SUBSTRATE |
KR20120027988A (ko) * | 2010-09-14 | 2012-03-22 | 삼성엘이디 주식회사 | 질화갈륨계 반도체소자 및 그 제조방법 |
US9312436B2 (en) * | 2011-05-16 | 2016-04-12 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer |
US9806224B2 (en) | 2013-01-31 | 2017-10-31 | Osram Opto Semiconductors Gmbh | Semiconductor layer sequence and method for producing a semiconductor layer sequence |
JP6796467B2 (ja) * | 2016-11-30 | 2020-12-09 | 住友化学株式会社 | 半導体基板 |
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US9287369B2 (en) | 2012-03-08 | 2016-03-15 | Kabushiki Kaisha Toshiba | Nitride semiconductor element and nitride semiconductor wafer |
US9508804B2 (en) | 2012-03-08 | 2016-11-29 | Kabushiki Kaisha Toshiba | Nitride semiconductor element and nitride semiconductor wafer |
JP2015192004A (ja) * | 2014-03-28 | 2015-11-02 | 国立大学法人 名古屋工業大学 | ドレイン電流密度・相互コンダクタンスを大幅に改善したリセス構造のmis型ノーマリオフhemt素子 |
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US8405067B2 (en) | 2013-03-26 |
CN102214701A (zh) | 2011-10-12 |
US20110248241A1 (en) | 2011-10-13 |
JP5689245B2 (ja) | 2015-03-25 |
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