JP6796467B2 - 半導体基板 - Google Patents
半導体基板 Download PDFInfo
- Publication number
- JP6796467B2 JP6796467B2 JP2016231902A JP2016231902A JP6796467B2 JP 6796467 B2 JP6796467 B2 JP 6796467B2 JP 2016231902 A JP2016231902 A JP 2016231902A JP 2016231902 A JP2016231902 A JP 2016231902A JP 6796467 B2 JP6796467 B2 JP 6796467B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- crystal
- crystal layer
- semiconductor substrate
- sialn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 96
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 239000013078 crystal Substances 0.000 claims description 135
- 229910052710 silicon Inorganic materials 0.000 claims description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 58
- 239000010703 silicon Substances 0.000 claims description 51
- 230000001629 suppression Effects 0.000 claims description 42
- 150000004767 nitrides Chemical group 0.000 claims description 28
- 125000004429 atom Chemical group 0.000 claims description 18
- 238000005430 electron energy loss spectroscopy Methods 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 241000252073 Anguilliformes Species 0.000 claims 1
- 239000010410 layer Substances 0.000 description 354
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 238000005121 nitriding Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 239000002994 raw material Substances 0.000 description 12
- 238000002003 electron diffraction Methods 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 230000001131 transforming effect Effects 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Description
SiAlN層120の作成を窒素原料ガスの先流しによる窒化処理により行うこととし、窒素原料ガスの先流し時間(窒化処理時間)を20秒、120秒および600秒と変えた3つの試料(半導体基板100)を作製した。すなわち、シリコン基板102として(111)面を主面とするSiウェハを用い、窒素原料ガスの先流しによる窒化処理を上記所定の時間行った後、反応抑制層104、中間層110、応力発生層106およびデバイス形成層108を形成した。反応抑制層104および中間層110として、設計厚さ150〜160nmのAlN層および設計厚さ250nmのAlGaN層を形成した。応力発生層106として、設計厚さ5nmのAlN層(第1結晶層106a)および設計厚さ28nmのAlGaN層(第2結晶層106b)からなるAlN/AlGaN積層構造(第1多重結晶層106c)を繰り返し積層して形成し、デバイス形成層108として、設計厚さ800nmのGaN層(活性層112)および設計厚さ20〜50nmのAlGaN層(ショットキ層114)を形成した。
Claims (9)
- シリコン基板、反応抑制層、応力発生層および活性層を有し、前記シリコン基板、前記反応抑制層、前記応力発生層および前記活性層が、前記シリコン基板、前記反応抑制層、前記応力発生層、前記活性層の順に位置する半導体基板であって、
前記反応抑制層が、シリコン原子とIII族原子との反応を抑制する窒化物結晶層であり、
前記応力発生層が、圧縮応力を発生する窒化物結晶層であり、
前記活性層が、電子素子が形成される窒化物結晶層であり、
前記シリコン基板と前記反応抑制層との間に、シリコン原子、アルミニウム原子および窒素原子を主構成原子とするSiAlN層をさらに有し、
前記SiAlN層が、周期構造を有する
半導体基板。 - 前記SiAlN層の厚みが、1.8nm以下である
請求項1に記載の半導体基板。 - 前記SiAlN層のEELS測定におけるSi原子L端ピークにおける損失エネルギー値が、バルクSiの場合と比較してΔEだけ大きく、
前記ΔEが、3.1eV以上4.8eV以下である
請求項1または請求項2に記載の半導体基板。 - 前記反応抑制層が、AlzGa1−zN(0.9≦z≦1)である
請求項1から請求項3の何れか一項に記載の半導体基板。 - 前記応力発生層が、
バルク結晶における格子定数がa1である第1結晶層およびバルク結晶における格子定数がa2(a1<a2)である第2結晶層を含む第1多重結晶層である第1の構成、
前記第1結晶層、前記第2結晶層、および、バルク結晶における格子定数がa3(a2<a3)である第3結晶層を含む第2多重結晶層である第2の構成、
バルク結晶における格子定数が、前記シリコン基板の近くから遠ざかるに従い連続的またはステップ状に大きくなるグレーディッド結晶層である第3の構成、または、
前記第1多重結晶層、前記第2多重結晶層または前記グレーディッド結晶層が複数繰り返して積層された多重積層結晶層である第4の構成、
の何れかの構成を有する
請求項1から請求項4の何れか一項に記載の半導体基板。 - 前記応力発生層が、
バルク結晶における格子定数がa1である第1結晶層およびバルク結晶における格子定数がa2(a1<a2)である第2結晶層を含む第1多重結晶層、または、前記第1多重結晶層が複数繰り返して積層された多重積層結晶層であり、
前記第1結晶層が、AlxGa1−xN(0.9≦x≦1)であり、
前記第2結晶層が、AlyGa1−yN(0≦y≦0.3)である
請求項5に記載の半導体基板。 - 前記活性層が、AlpGa1−pN(0≦p≦0.1)からなる層を含む
請求項1から請求項6の何れか一項に記載の半導体基板。 - 前記反応抑制層と前記応力発生層との間に、AlqGa1−qN(0≦q≦1、q<z)からなる中間層をさらに有する
請求項1から請求項7の何れか一項に記載の半導体基板。 - 前記中間層の厚みが、20nm以上600nm以下である
請求項8に記載の半導体基板。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016231902A JP6796467B2 (ja) | 2016-11-30 | 2016-11-30 | 半導体基板 |
EP17877275.2A EP3550592A4 (en) | 2016-11-30 | 2017-11-29 | SEMICONDUCTOR SUBSTRATE |
CN201780073938.8A CN110024083A (zh) | 2016-11-30 | 2017-11-29 | 半导体衬底 |
PCT/JP2017/042919 WO2018101367A1 (ja) | 2016-11-30 | 2017-11-29 | 半導体基板 |
TW106141869A TWI761400B (zh) | 2016-11-30 | 2017-11-30 | 半導體基板 |
US16/425,516 US11011630B2 (en) | 2016-11-30 | 2019-05-29 | Semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016231902A JP6796467B2 (ja) | 2016-11-30 | 2016-11-30 | 半導体基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018088502A JP2018088502A (ja) | 2018-06-07 |
JP6796467B2 true JP6796467B2 (ja) | 2020-12-09 |
Family
ID=62241714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016231902A Active JP6796467B2 (ja) | 2016-11-30 | 2016-11-30 | 半導体基板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11011630B2 (ja) |
EP (1) | EP3550592A4 (ja) |
JP (1) | JP6796467B2 (ja) |
CN (1) | CN110024083A (ja) |
TW (1) | TWI761400B (ja) |
WO (1) | WO2018101367A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6868389B2 (ja) * | 2016-12-27 | 2021-05-12 | 住友化学株式会社 | 半導体基板および電子デバイス |
JP7204339B2 (ja) * | 2018-05-02 | 2023-01-16 | 株式会社三共 | 遊技機 |
JP7158272B2 (ja) * | 2018-12-25 | 2022-10-21 | エア・ウォーター株式会社 | 化合物半導体基板 |
JP7132156B2 (ja) * | 2019-03-07 | 2022-09-06 | 株式会社東芝 | 半導体装置 |
CN111816756A (zh) * | 2020-07-14 | 2020-10-23 | 济南晶正电子科技有限公司 | 一种复合压电衬底及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1825539A (zh) * | 2005-02-22 | 2006-08-30 | 中国科学院半导体研究所 | 一种在硅衬底上生长无裂纹ⅲ族氮化物的方法 |
JP2006310688A (ja) * | 2005-05-02 | 2006-11-09 | Nichia Chem Ind Ltd | 半導体構造体、半導体素子、窒化物半導体結晶の形成方法 |
JP5224311B2 (ja) | 2007-01-05 | 2013-07-03 | 古河電気工業株式会社 | 半導体電子デバイス |
JP5133927B2 (ja) | 2009-03-26 | 2013-01-30 | コバレントマテリアル株式会社 | 化合物半導体基板 |
US8426893B2 (en) * | 2009-05-11 | 2013-04-23 | Dowa Electronics Materials Co., Ltd. | Epitaxial substrate for electronic device and method of producing the same |
DE112010003214B4 (de) * | 2009-08-07 | 2016-06-16 | Ngk Insulators, Ltd. | Epitaxiesubstrat für eine halbleitervorrichtung, verfahren zur herstellung eines epitaxiesubstrats für eine halbleitervorrichtung, und halbleitervorrichtung |
JP5689245B2 (ja) * | 2010-04-08 | 2015-03-25 | パナソニック株式会社 | 窒化物半導体素子 |
JP5665676B2 (ja) | 2011-07-11 | 2015-02-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物エピタキシャル基板およびその製造方法 |
JP5139567B1 (ja) * | 2011-09-22 | 2013-02-06 | シャープ株式会社 | 窒化物半導体層を成長させるためのバッファ層構造を有する基板 |
JP5785103B2 (ja) | 2012-01-16 | 2015-09-24 | シャープ株式会社 | ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ |
CN102851734B (zh) * | 2012-09-06 | 2015-11-25 | 苏州晶湛半导体有限公司 | 半导体外延结构及其生长方法 |
JP2015216311A (ja) * | 2014-05-13 | 2015-12-03 | 株式会社ニューフレアテクノロジー | 半導体基板、半導体基板の製造方法および半導体装置 |
AT518350A3 (de) | 2014-11-07 | 2019-06-15 | Sumitomo Chemical Co | Halbleiterwafer und Verfahren zum Prüfen eines Halbleiterwafers |
-
2016
- 2016-11-30 JP JP2016231902A patent/JP6796467B2/ja active Active
-
2017
- 2017-11-29 EP EP17877275.2A patent/EP3550592A4/en not_active Withdrawn
- 2017-11-29 CN CN201780073938.8A patent/CN110024083A/zh active Pending
- 2017-11-29 WO PCT/JP2017/042919 patent/WO2018101367A1/ja unknown
- 2017-11-30 TW TW106141869A patent/TWI761400B/zh active
-
2019
- 2019-05-29 US US16/425,516 patent/US11011630B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3550592A4 (en) | 2020-08-05 |
EP3550592A1 (en) | 2019-10-09 |
US20190296136A1 (en) | 2019-09-26 |
WO2018101367A1 (ja) | 2018-06-07 |
CN110024083A (zh) | 2019-07-16 |
JP2018088502A (ja) | 2018-06-07 |
TW201828366A (zh) | 2018-08-01 |
US11011630B2 (en) | 2021-05-18 |
TWI761400B (zh) | 2022-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6796467B2 (ja) | 半導体基板 | |
Shih et al. | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs | |
TWI524552B (zh) | 具有AlzGa-zN層的半導體晶圓及其製造方法 | |
US9419160B2 (en) | Nitride semiconductor structure | |
WO2016072521A1 (ja) | 半導体基板および半導体基板の検査方法 | |
Jiang et al. | Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps | |
Yusoff et al. | Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate | |
Luong et al. | Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD | |
TW201009898A (en) | Film deposition method | |
Susanto et al. | Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment | |
Abd Rahman et al. | Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD | |
WO2015198492A1 (ja) | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ | |
US11522105B2 (en) | Nitride semiconductor laminated structure, nitride semiconductor light emitting element, and method for manufacturing nitride semiconductor laminated structure | |
JP5225928B2 (ja) | Iii族窒化物半導体の製造方法 | |
TWI744429B (zh) | 半導體基板 | |
Li et al. | Defect reduction in Si-doped Al0. 45Ga0. 55N films by SiNx interlayer method | |
JP6812322B2 (ja) | 窒化物半導体基板 | |
JP6807730B2 (ja) | 半導体基板の検査方法、半導体基板の品質判定方法および半導体基板 | |
Lu et al. | High quality GaN film overgrown on GaN nanorods array template by HVPE | |
Wei et al. | Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si (111) substrates | |
Chen et al. | Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy | |
KR100731586B1 (ko) | 질화물 반도체 및 그 제조방법 | |
Li | MOCVD Growth and Characterization of High Quality Semi-polar (11-22) AlGaN Obtained with Overgrowth Technique | |
Tot et al. | Low temperature growth of InAlN on epitaxially grown SiC/Si (111) wafers | |
Wu et al. | Crack-free InAlGaN quaternary alloy films grown on Si (1 1 1) substrate by metalorganic chemical vapor deposition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190821 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200707 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20200904 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200924 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201027 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201116 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6796467 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |