AT518350A3 - Halbleiterwafer und Verfahren zum Prüfen eines Halbleiterwafers - Google Patents

Halbleiterwafer und Verfahren zum Prüfen eines Halbleiterwafers Download PDF

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Publication number
AT518350A3
AT518350A3 ATA9400/2015A AT94002015A AT518350A3 AT 518350 A3 AT518350 A3 AT 518350A3 AT 94002015 A AT94002015 A AT 94002015A AT 518350 A3 AT518350 A3 AT 518350A3
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Austria
Prior art keywords
layer
semiconductor wafer
wafer
crystal
group iii
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Application number
ATA9400/2015A
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English (en)
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AT518350A2 (de
Inventor
Yamada Hisashi
Yamamoto Taiki
Kasahara Kenji
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Sumitomo Chemical Co
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Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of AT518350A2 publication Critical patent/AT518350A2/de
Publication of AT518350A3 publication Critical patent/AT518350A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Abstract

Durch die vorliegende Erfindung wird ein Halbleiterwafer (100) bereitgestellt, der durch Ausbilden einer Gruppe-III-Nitridhalbleiterschicht durch epitaktisches Wachstum auf einem Si-Wafer (102) erhalten wird, wobei die Gruppe-III-Nitrid-Halbleiterschicht zufriedenstellende Eigenschaften erzielen kann, wie beispielsweise die erforderliche Spannungsfestigkeit, die physikalischen Eigenschaften, wie beispielsweise der Schichtwiderstand zum zuverlässigen Erzielen einer geeigneten Gleichmäßigkeit innerhalb der Ebene, und der Halbleiterwafer (100) sich nur wenig verzieht. Es wird ein Halbleiterwafer (100) bereitgestellt, bei dem eine Nitridkristallschicht auf einem Siliziumwafer (102) eine Reaktionsunterdrückungsschicht (104), die konfiguriert ist, die Reaktion zwischen einem Siliziumatom und einem Gruppe-lIl-Atom zu unterdrücken, eine spannungserzeugende Schicht (106), die konfiguriert ist, eine Druckspannung zu erzeugen, und eine aktive Schicht (108) aufweist, in der ein elektronisches Element ausgebildet werden soll, wobei die Reaktionsunterdrückungsschicht (104), die spannungserzeugende Schicht (106) und die aktive Schicht (108) in dieser Reihenfolge derart angeordnet sind, dass die Reaktionsunterdrückungsschicht (104) am nächsten zum Siliziumwafer (102) angeordnet ist, und wobei die spannungserzeugende Schicht (106) eine erste Kristallschicht (106a) mit einer Volumenkristallgitterkonstante a1 und eine zweite Kristallschicht (106b) aufweist, die mit einer der aktiven Schicht zugewandten Oberfläche der ersten Kristallschicht (106a) in Kontakt steht, wobei die zweite Kristallschicht (106b) eine Volumenkristallgitterkonstante a2 (a1 < a2) aufweist.
ATA9400/2015A 2014-11-07 2015-11-06 Halbleiterwafer und Verfahren zum Prüfen eines Halbleiterwafers AT518350A3 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014227596 2014-11-07
JP2014227595 2014-11-07
JP2014227593 2014-11-07
JP2014227594 2014-11-07
PCT/JP2015/081411 WO2016072521A1 (ja) 2014-11-07 2015-11-06 半導体基板および半導体基板の検査方法

Publications (2)

Publication Number Publication Date
AT518350A2 AT518350A2 (de) 2017-09-15
AT518350A3 true AT518350A3 (de) 2019-06-15

Family

ID=55909244

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA9400/2015A AT518350A3 (de) 2014-11-07 2015-11-06 Halbleiterwafer und Verfahren zum Prüfen eines Halbleiterwafers

Country Status (8)

Country Link
US (1) US10763332B2 (de)
JP (1) JP6656160B2 (de)
KR (1) KR102416870B1 (de)
CN (1) CN107078034B (de)
AT (1) AT518350A3 (de)
DE (1) DE112015005069T5 (de)
TW (1) TWI657578B (de)
WO (1) WO2016072521A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6796467B2 (ja) 2016-11-30 2020-12-09 住友化学株式会社 半導体基板
JP6859084B2 (ja) * 2016-11-30 2021-04-14 住友化学株式会社 半導体基板
JP6868389B2 (ja) * 2016-12-27 2021-05-12 住友化学株式会社 半導体基板および電子デバイス
JP6717267B2 (ja) * 2017-07-10 2020-07-01 株式会社Sumco シリコンウェーハの製造方法
JP2021027297A (ja) * 2019-08-08 2021-02-22 住友化学株式会社 エピタキシャル基板およびその製造方法
KR20210045835A (ko) * 2019-10-17 2021-04-27 삼성전자주식회사 반도체 박막 구조체 및 이를 포함하는 전자 소자
CN110783176B (zh) * 2019-10-30 2022-07-12 广西大学 一种低应力半导体材料制备方法
US20220029007A1 (en) * 2020-07-24 2022-01-27 Vanguard International Semiconductor Corporation Semiconductor structure and semiconductor device
JP2023096570A (ja) * 2021-12-27 2023-07-07 国立研究開発法人産業技術総合研究所 化合物半導体基板

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JP2013069939A (ja) * 2011-09-23 2013-04-18 Sumitomo Chemical Co Ltd 半導体基板および半導体基板の製造方法
JP2013145782A (ja) * 2012-01-13 2013-07-25 Sharp Corp ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ
US20140015608A1 (en) * 2012-07-10 2014-01-16 Fujitsu Limited Compound semiconductor device, method for producing the same, power-supply unit, and high-frequency amplifier
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Publication number Priority date Publication date Assignee Title
US20140209862A1 (en) * 2011-07-11 2014-07-31 Dowa Electronics Materials Co., Ltd. Group iii nitride epitaxial substrate and method for manufacturing the same
JP2013069939A (ja) * 2011-09-23 2013-04-18 Sumitomo Chemical Co Ltd 半導体基板および半導体基板の製造方法
JP2013145782A (ja) * 2012-01-13 2013-07-25 Sharp Corp ヘテロ接合型電界効果トランジスタ用のエピタキシャルウエハ
US20140015608A1 (en) * 2012-07-10 2014-01-16 Fujitsu Limited Compound semiconductor device, method for producing the same, power-supply unit, and high-frequency amplifier

Also Published As

Publication number Publication date
CN107078034A (zh) 2017-08-18
JPWO2016072521A1 (ja) 2017-09-21
KR20170077227A (ko) 2017-07-05
KR102416870B1 (ko) 2022-07-05
WO2016072521A1 (ja) 2016-05-12
AT518350A2 (de) 2017-09-15
DE112015005069T5 (de) 2017-07-20
TWI657578B (zh) 2019-04-21
US20170236906A1 (en) 2017-08-17
JP6656160B2 (ja) 2020-03-04
US10763332B2 (en) 2020-09-01
TW201624695A (zh) 2016-07-01
CN107078034B (zh) 2020-10-23

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