CN102197168B - SiC单晶膜的制造方法及装置 - Google Patents
SiC单晶膜的制造方法及装置 Download PDFInfo
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- CN102197168B CN102197168B CN200980143257.XA CN200980143257A CN102197168B CN 102197168 B CN102197168 B CN 102197168B CN 200980143257 A CN200980143257 A CN 200980143257A CN 102197168 B CN102197168 B CN 102197168B
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- main chamber
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-221851 | 2008-08-29 | ||
JP2008221851 | 2008-08-29 | ||
PCT/JP2009/065080 WO2010024390A1 (ja) | 2008-08-29 | 2009-08-28 | SiC単結晶膜の製造方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102197168A CN102197168A (zh) | 2011-09-21 |
CN102197168B true CN102197168B (zh) | 2014-03-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980143257.XA Withdrawn - After Issue CN102197168B (zh) | 2008-08-29 | 2009-08-28 | SiC单晶膜的制造方法及装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8492774B2 (zh) |
EP (1) | EP2330236B1 (zh) |
JP (1) | JP5304792B2 (zh) |
KR (1) | KR101346415B1 (zh) |
CN (1) | CN102197168B (zh) |
WO (1) | WO2010024390A1 (zh) |
Families Citing this family (25)
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EP2471981A4 (en) * | 2009-08-27 | 2013-04-17 | Nippon Steel & Sumitomo Metal Corp | SIC MONOCRYSTAL WAFER AND METHOD FOR MANUFACTURING THE SAME |
JP5434801B2 (ja) * | 2010-06-03 | 2014-03-05 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
JP5355533B2 (ja) * | 2010-11-09 | 2013-11-27 | 新日鐵住金株式会社 | n型SiC単結晶の製造方法 |
JP2012193055A (ja) * | 2011-03-15 | 2012-10-11 | Toyota Motor Corp | SiC単結晶製造方法およびそれに用いる装置 |
JP5528396B2 (ja) | 2011-06-20 | 2014-06-25 | 新日鐵住金株式会社 | 溶液成長法によるSiC単結晶の製造装置、当該製造装置を用いたSiC単結晶の製造方法及び当該製造装置に用いられる坩堝 |
JP5668724B2 (ja) * | 2012-06-05 | 2015-02-12 | トヨタ自動車株式会社 | SiC単結晶のインゴット、SiC単結晶、及び製造方法 |
TW201415541A (zh) * | 2012-10-11 | 2014-04-16 | Ritedia Corp | 磊晶成長方法 |
JP5761264B2 (ja) * | 2013-07-24 | 2015-08-12 | トヨタ自動車株式会社 | SiC基板の製造方法 |
CN103526281B (zh) * | 2013-09-29 | 2016-05-11 | 青岛赛瑞达电子装备股份有限公司 | 立式液相外延炉 |
KR20160078343A (ko) * | 2013-11-12 | 2016-07-04 | 신닛테츠스미킨 카부시키카이샤 | SiC 단결정의 제조 방법 |
US10403509B2 (en) * | 2014-04-04 | 2019-09-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing |
US9425262B2 (en) | 2014-05-29 | 2016-08-23 | Fairchild Semiconductor Corporation | Configuration of portions of a power device within a silicon carbide crystal |
JP2016064958A (ja) * | 2014-09-25 | 2016-04-28 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
CN104775149B (zh) * | 2015-05-05 | 2017-09-22 | 山东天岳先进材料科技有限公司 | 一种生长高纯半绝缘碳化硅单晶的方法及装置 |
CN105002563B (zh) * | 2015-08-11 | 2017-10-24 | 中国科学院半导体研究所 | 碳化硅外延层区域掺杂的方法 |
KR102022693B1 (ko) * | 2016-03-03 | 2019-09-18 | 주식회사 엘지화학 | 탄화규소 단결정의 제조 장치 |
EP3382068B1 (en) | 2017-03-29 | 2022-05-18 | SiCrystal GmbH | Silicon carbide substrate and method of growing sic single crystal boules |
EP3382067B1 (en) * | 2017-03-29 | 2021-08-18 | SiCrystal GmbH | Silicon carbide substrate and method of growing sic single crystal boules |
JP6777908B1 (ja) * | 2019-11-19 | 2020-10-28 | Ftb研究所株式会社 | 単結晶成長装置、該単結晶成長装置の使用方法および単結晶成長方法 |
CN112410870B (zh) * | 2020-11-20 | 2022-02-01 | 中电化合物半导体有限公司 | 基于液相外延法生长碳化硅晶体的生长控制方法及系统 |
CN114481317A (zh) * | 2022-01-27 | 2022-05-13 | 北京青禾晶元半导体科技有限责任公司 | 一种制造碳化硅晶体的装置及制造碳化硅晶体的方法 |
CN114318541A (zh) * | 2022-03-07 | 2022-04-12 | 常州臻晶半导体有限公司 | 一种碳化硅晶体生长用输送装置 |
CN115478324A (zh) * | 2022-08-31 | 2022-12-16 | 昆明理工大学 | 一种助溶剂法生长单晶或多晶SiC晶体的方法 |
CN115910755A (zh) * | 2023-01-09 | 2023-04-04 | 宁波合盛新材料有限公司 | 一种碳化硅外延片及其制备方法 |
CN116334737B (zh) * | 2023-04-11 | 2023-12-05 | 通威微电子有限公司 | 一种碳化硅废料液相法回收用坩埚、回收装置及回收方法 |
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Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: electroluminescence mechanisms;M.Ikeda et al.;《Journal of Applied Physics》;19791231;第50卷(第12期);8215-8225 * |
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EP2330236B1 (en) | 2014-04-09 |
EP2330236A4 (en) | 2011-11-30 |
JP5304792B2 (ja) | 2013-10-02 |
CN102197168A (zh) | 2011-09-21 |
US20110198614A1 (en) | 2011-08-18 |
KR20110057186A (ko) | 2011-05-31 |
EP2330236A1 (en) | 2011-06-08 |
JPWO2010024390A1 (ja) | 2012-01-26 |
US8492774B2 (en) | 2013-07-23 |
WO2010024390A1 (ja) | 2010-03-04 |
KR101346415B1 (ko) | 2014-01-02 |
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