WO2008133077A1 - 無機化合物の製造方法、蛍光体、蛍光体含有組成物、発光装置、照明装置及び画像表示装置 - Google Patents

無機化合物の製造方法、蛍光体、蛍光体含有組成物、発光装置、照明装置及び画像表示装置 Download PDF

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Publication number
WO2008133077A1
WO2008133077A1 PCT/JP2008/057262 JP2008057262W WO2008133077A1 WO 2008133077 A1 WO2008133077 A1 WO 2008133077A1 JP 2008057262 W JP2008057262 W JP 2008057262W WO 2008133077 A1 WO2008133077 A1 WO 2008133077A1
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WO
WIPO (PCT)
Prior art keywords
fluorescent
fluorescent material
image display
illuminator
inorganic compound
Prior art date
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PCT/JP2008/057262
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English (en)
French (fr)
Inventor
Hideaki Kaneda
Hiromu Watanabe
Naoto Kijima
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Mitsubishi Chemical Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corporation filed Critical Mitsubishi Chemical Corporation
Priority to EP08740350.7A priority Critical patent/EP2135920B1/en
Priority to US12/282,656 priority patent/US8178001B2/en
Publication of WO2008133077A1 publication Critical patent/WO2008133077A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/20—Silicates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Abstract

　長波長の領域に発光ピーク波長を持つＣＡＳＮ蛍光体を発光強度の低下を抑えつつ製造する方法、従来のものよりＮＴＳＣ比の高い画像表示装置に用いるのに好ましい蛍光体、該蛍光体含有組成物、該蛍光体を用いた発光装置、画像表示装置及び照明装置。仕込み原料において、Ａｌ元素１モル当たりのＳｉ元素の量が１モルより多く、かつ１．１４モルより少ない量である原料を用いて一般式（Ｉ）で表される無機化合物を製造する方法。 　　Ｍ１ａＭ２ｂＡｌＳｉＸ３　　　（Ｉ） （Ｍ１は、少なくともＥｕを含有する付活元素を示し、 　Ｍ２は、アルカリ土類金属元素から選ばれる１種以上の元素を示し、 　Ｘは、Ｏ及びＮからなる群より選ばれる１種以上の元素を示し、 　ａ及びｂは、各々、０＜ａ≦０．１、０．８≦ａ＋ｂ≦１を満たす正の数を示す。）
PCT/JP2008/057262 2007-04-18 2008-04-14 無機化合物の製造方法、蛍光体、蛍光体含有組成物、発光装置、照明装置及び画像表示装置 WO2008133077A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08740350.7A EP2135920B1 (en) 2007-04-18 2008-04-14 Process for producing inorganic compound, fluorescent material, fluorescent-material-containing composition, luminescent device, illuminator, and image display
US12/282,656 US8178001B2 (en) 2007-04-18 2008-04-14 Method for producing inorganic compound, phosphor, phosphor-containing composition, light-emitting device, lighting system, and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007108924 2007-04-18
JP2007-108924 2007-04-18

Publications (1)

Publication Number Publication Date
WO2008133077A1 true WO2008133077A1 (ja) 2008-11-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057262 WO2008133077A1 (ja) 2007-04-18 2008-04-14 無機化合物の製造方法、蛍光体、蛍光体含有組成物、発光装置、照明装置及び画像表示装置

Country Status (4)

Country Link
US (1) US8178001B2 (ja)
EP (1) EP2135920B1 (ja)
JP (1) JP2008285662A (ja)
WO (1) WO2008133077A1 (ja)

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JP2011029497A (ja) * 2009-07-28 2011-02-10 Mitsubishi Chemicals Corp 白色発光装置およびそれを用いた照明装置
US20120146079A1 (en) * 2009-08-17 2012-06-14 Frank Baumann Conversion LED with High Color Rendition Index
JP2019147728A (ja) * 2018-02-28 2019-09-05 東ソー株式会社 ストロンチウムを含むバルク体及びその製造方法

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US20100231121A1 (en) 2010-09-16
US8178001B2 (en) 2012-05-15
JP2008285662A (ja) 2008-11-27

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