WO2005035174A1 - ダイヤモンド工具、合成単結晶ダイヤモンドおよび単結晶ダイヤモンドの合成方法ならびにダイヤモンド宝飾品 - Google Patents
ダイヤモンド工具、合成単結晶ダイヤモンドおよび単結晶ダイヤモンドの合成方法ならびにダイヤモンド宝飾品 Download PDFInfo
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- WO2005035174A1 WO2005035174A1 PCT/JP2004/014910 JP2004014910W WO2005035174A1 WO 2005035174 A1 WO2005035174 A1 WO 2005035174A1 JP 2004014910 W JP2004014910 W JP 2004014910W WO 2005035174 A1 WO2005035174 A1 WO 2005035174A1
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- diamond
- single crystal
- tool
- synthetic single
- crystal diamond
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
- B23B27/18—Cutting tools of which the bits or tips or cutting inserts are of special material with cutting bits or tips or cutting inserts rigidly mounted, e.g. by brazing
- B23B27/20—Cutting tools of which the bits or tips or cutting inserts are of special material with cutting bits or tips or cutting inserts rigidly mounted, e.g. by brazing with diamond bits or cutting inserts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/061—Graphite
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B2240/00—Details of connections of tools or workpieces
- B23B2240/08—Brazed connections
Definitions
- Diamond tool synthetic single crystal diamond and method of synthesizing single crystal diamond, and diamond jewelry
- the present invention relates to a diamond tool, a synthetic single crystal diamond and a method of synthesizing a single crystal diamond, and a diamond jewelry product, and in particular, has a sharp cutting edge, is excellent in wear resistance and defect resistance, and is stable in quality.
- Diamond tools and diamond tools with excellent wear resistance such as diamond tools, diamond tools with excellent wear resistance, synthetic single crystals containing substitutional nickel in crystals, and single crystals Synthesis method of diamond, synthesis method of synthetic single crystal diamond and single crystal diamond containing boron and nickel in atomic substitution type in crystal
- the present invention relates to diamond jewelry exhibiting bright colors.
- a conventional single crystal diamond tool has been manufactured by selecting an appropriate raw stone from natural diamond.
- artificially synthesized single crystal diamond (lb type) containing nitrogen as an impurity was used!
- Diamond is widely used for industrial and jewelry applications because of its extremely high hardness, very good thermal conductivity, and its beautiful refractive index due to its large refractive index.
- industrially manufactured diamond is widely used mainly for industrial use.
- Such industrially manufactured diamond is generally synthesized and manufactured by a temperature difference method or the like in which crystals are grown under an ultra-high pressure and high temperature (patent document 1 and patent document 6).
- Patent Document 10 Japanese Patent Application Laid-Open No. 60-12747
- Patent Document 2 Japanese Patent Application Laid-Open No. 5-137999
- Patent Document 3 Japanese Patent Application Laid-Open No. 5-138000
- Patent Document 4 Japanese Patent Application Laid-Open No. 5-329356
- Patent Document 5 Japanese Patent Application Laid-Open No. 6-182182
- Patent Document 6 Japanese Patent Application Laid-Open No. 6-182184
- Patent Document 7 Japanese Patent Application Laid-Open No. 3-131407
- Patent Document 8 JP-A-3-228504
- Patent Document 9 Japanese Patent Application Laid-Open No. 7-116494
- Patent Document 10 Japanese Patent Application Laid-Open No. 5-200271
- Non-Patent Document 1 Sumiya et al., Diamond and Related Materials, 5, 135 9 (1996)
- Natural diamond contains many nitrogen impurities, reflects the complex growth history inside the earth, has many strains and crystal defects in the crystal, and has large variation due to the crystal. It is almost impossible to obtain stable crystals of high quality free of impurities and crystal defects from natural diamond. These crystal defects and impurities possessed by natural diamond are the source of destruction. As a result, tools using conventional natural diamonds have unstable quality, and their performance and life have been greatly dispersed.
- synthetic diamond single crystals in which diamond is grown under thermodynamically stable high pressure and high temperature conditions are far superior in crystallinity and stable in quality than natural diamond.
- ordinary synthetic diamond contains several tens to hundreds of ppm of nitrogen as a single substitutional impurity (type lb), and affects various properties.
- strong absorption by nitrogen impurities occurs in the ultraviolet and infrared regions.
- the nitrogen impurities are unevenly distributed in the crystal, which causes distortion in the inside of the crystal.
- diamond synthesized by the temperature difference method is not limited to the use of a solvent metal to which a special nitrogen getter is added.
- the nitrogen in the solvent is incorporated into the crystals and turns yellow.
- this nitrogen is an atom substitution type impurity and the nitrogen atom has a size larger than that of a carbon atom, it partially distorts the cubic crystal structure of diamond. As a result, the hardness and thermal conductivity of the diamond decrease.
- Patent Documents 9 and 10 in order to synthesize one having more excellent mechanical properties, and one having semiconductor properties and conductivity which diamond originally does not have, the compound has properties. It is also made to mix boron (B) in a diamond crystal. However, for this purpose, the current technology is still insufficient because it requires special diamond powder as a carbon source.
- a nitrogen getter such as aluminum (A1), titanium (Ti) or zirconium (Zr) is added to the solvent metal at the time of production.
- Various methods have been developed. In these methods, the nitrogen content is low and the force is also colorless A bright diamond is obtained.
- the carbides of these nitrogen getters formed in the solvent not to be incorporated into the diamond crystals it is necessary to reduce the growth rate of the crystals. Also in this case, as described in Patent Documents 2 to 6, the power at which various efforts are made is that the growth rate is at most 2 mg Zhr to 2.5 mg Zhr at present. This increases the manufacturing cost.
- one object of the present invention is to provide a diamond tool having a superior level of edge resistance, wear resistance and quality stability, which is far superior to conventional diamond tools.
- the other object of the present invention is low in nitrogen content of impurities, inexpensive and industrially applicable, excellent in mechanical and physical properties such as abrasion resistance, and beautiful color, low for tool body It is an object of the present invention to provide a method of synthesizing synthetic single crystal diamond and single crystal diamond which is easy to attach.
- Still another object of the present invention is to provide a diamond jewelry using a beautiful color and inexpensive synthetic single crystal diamond.
- the diamond tool according to the present invention is produced using single crystal diamond artificially synthesized by the temperature difference method under high pressure, and the amount of impurities of diamond in the crystal is 3 ppm or less.
- the impurity amount of diamond in the crystal Is less than 0.1 ppm.
- Nitrogen impurities in artificially synthesized diamond can be removed by adding a component that becomes a nitrogen getter at the time of high-pressure synthesis to a solvent, but it tends to contain inclusions and a good crystal can not be obtained.
- the present inventors have shown a method by which a good crystal can be obtained even with the addition of a nitrogen getter (Non-patent Document 1).
- high purity synthetic diamond crystals (type Ila) in which nitrogen impurities are controlled to 3 ppm or less do not have crystal defects or distortion due to impurities.
- mechanical properties such as hardness and strength are improved, and variations in quality are considered to be reduced.
- the inventors examined the mechanical properties of this high purity synthetic diamond in detail, and found out that they have features not found in natural diamond and conventional synthetic diamond.
- Table 1 shows the results of measurement of Knoop hardness in the ⁇ 100> direction and the ⁇ 110> direction of the (100) plane of synthetic diamond crystals different in the nitrogen content.
- the Knoop hardness in the (100) face 100> direction improves as the amount of nitrogen decreases, as shown in Fig.1.
- the nitrogen content is 1ppm or less, and the hardness is 100OOkgZmm 2 or more, which is high hardness.
- synthetic diamond crystals having a nitrogen content of 3 ppm or less no normal Knoop indentation is formed in the (100) plane 110> direction, which indicates that the diamond is very hard.
- the diamond tool can be used as an ultra-precision cutting tool. Due to the high hardness and high hardness of the above-mentioned low nitrogen content diamond, it is possible to provide an ultra-precision cutting tool with high wear resistance.
- the diamond tool can be a diamond knife such as a microtome knife or a surgical knife.
- the high hardness and low defects of the above-mentioned low nitrogen-containing diamond can provide a diamond knife having excellent blade standability.
- the diamond tool is It can be a diamond stylus.
- the high, hardness and low defects of the above-mentioned low nitrogen content diamond can provide a wire drawing die excellent in wear resistance and less in defects.
- the diamond tool can be a dresser.
- the high hardness and low defects of the low nitrogen-containing diamond described above can provide a dresser having excellent wear resistance and good standability.
- a tool was produced using a synthetic diamond with less amount of crystal defects and having an impurity amount of 3 ppm or less, preferably 0.1 ppm or less.
- the amount of impurities can be reduced by adding a nitrogen getter such as Ti to the solvent using a high purity carbon source, Fe—Co solvent.
- a nitrogen getter such as Ti
- dislocation defects can be removed by using a crystal cut out from a low defect diamond crystal as a seed.
- the synthetic single crystal diamond according to the present invention is, in one aspect, a synthetic single crystal diamond synthesized by the temperature difference method under an ultra-high pressure and high temperature, and is a nickel which has penetrated into the crystal by atomic substitution. It is characterized by containing.
- nickel since a large amount of nickel is contained in the solvent, it becomes a synthetic single crystal diamond exhibiting a pale green color. At the same time, since nitrogen introduced in the form of atomic substitution into synthetic single crystal diamond is reduced, crystal distortion is reduced, and the hardness and wear resistance of synthetic single crystal diamond are improved.
- the nickel content is preferably 0.01-lO ppm. If the nickel content is ⁇ ⁇ m or less, the hardness, wear resistance and edge resistance of the synthetic single crystal diamond are not adversely affected, and the synthetic single crystal diamond exhibits a beautiful pale green color. Further, if it exceeds 10 ppm, the action and effect of the present invention become blacker due to excessive distortion. On the other hand, if the nickel content is less than 0.1 ppm, it is preferable from the viewpoint of mechanical and physical qualities such as strength of synthetic single crystal diamond, but it is costly and time-consuming to manufacture. This is because the growth rate of crystals can be greatly increased by using a solvent containing nickel. Furthermore, from the surface exhibiting a light green color, at least 1 ppm of nickel is contained. preferable.
- the nitrogen content is preferably 0.01 to 3 ppm. Within this range, effects such as improvement in hardness and wear resistance can be sufficiently obtained, and the manufacturing cost can be suppressed.
- an active brazing material containing titanium is used when brazing a synthetic single crystal diamond to a shank (tool main body) using a brazing material. Is preferable because it can be brazed at a relatively low temperature.
- the synthetic single crystal diamond of the present invention does not exhibit deep yellow and exhibits pale green color because it contains nickel with a very low nitrogen content. For this reason, it is preferable to use it as jewelry.
- a tool using the synthetic single crystal diamond of the present invention can obtain effects such as prolongation of life as a tool having high hardness, high hardness and wear resistance.
- Such tools include Neut and Dresser.
- a jewelry using the synthetic single crystal diamond of the present invention can be highly evaluated as a light green jewelry.
- the method of synthesizing single crystal diamond according to the present invention is a method of synthesizing single crystal diamond by the temperature difference method under ultra-high pressure and high temperature, which comprises at least one of iron and cobalt. It is characterized by using a solvent consisting of 36% by weight or more of nickel, 12% by weight of titanium, and 35.5% by weight of black.
- titanium which is contained in an amount of about 12% by weight, preferably about 1.5% by weight, in the solvent reacts with nitrogen contained as an impurity to cause nitrogen to penetrate into the diamond crystal. Stop it.
- an element such as copper is not added to prevent the occurrence of the inclusion, it does not intrude into the diamond crystal as the titanium force S inclusion. It is presumed that this is because the solvent contains about 36% by weight, preferably about 40% by weight, of nickel occupying a position very close to copper in the periodic table.
- the solvent contains about 36% by weight, preferably about 40% by weight, of nickel occupying a position very close to copper in the periodic table.
- the seed plane of the seed crystal is preferably a (100) plane.
- the synthesis temperature is preferably 1380 ⁇ 25 ° C from the viewpoint of moderate penetration of nickel as atomic substitution type impurity into diamond crystals! / ,.
- the synthesis rate is preferably 3.9-4. 7 mg Zhr (hour) from the viewpoint of economy and appropriate penetration of nickel as atomic substitution type impurity into a diamond crystal.
- the synthetic single crystal diamond of the present invention is a synthetic single crystal diamond synthesized by a temperature difference method under an ultra-high pressure and high temperature, and boron which has penetrated into the crystal by atomic substitution. Contains nickel and
- the nitrogen substituted in the atomic substitution type in the synthetic single crystal diamond is reduced, and the reverse occurs.
- a synthetic single crystal diamond is obtained which contains boron and nickel in the form of atomic substitution.
- the boron content is preferably in the range of 1 to 300 ppm. If it is 300 ppm or less, it is because the wear resistance is also excellent, as solvent metal is less likely to be taken in as impurities in the diamond crystal. Also, if it exceeds 300 ppm, the crystal becomes brittle and the color becomes black, which makes it difficult to put to practical use. In addition, when it is 1 ppm or more, particularly 5 ppm or more, a suitable pale blue-green color is exhibited, and additionally, a suitable conductivity is obtained.
- the amount of nickel is preferably 0.01-lO ppm. If it is less than 10 ppm, it exhibits a pale blue-green color, and along with the action of a nitrogen getter such as titanium, the penetration of nitrogen by atomic substitution into the diamond crystal becomes relatively small, and therefore hardness, wear resistance, It is because it becomes a single crystal diamond having a good cutting ability. Also, if it exceeds 10 ppm, excessive distortion occurs and the color also becomes black. Also, less than 0. Olppm time and cost to manufacture Because it takes Furthermore, from the surface that exhibits a pale blue-green color with the coexisting boron
- At least 1 ppm Preferably at least 1 ppm.
- the nitrogen content is preferably 3 ppm or less. If it is 3 ppm or less, the strain of the diamond crystal is small, and therefore, the hardness, the wear resistance and the friability become good.
- the present invention exhibits significant effects such as excellent wear resistance and the like by applying to synthetic single crystal diamond used for a tool.
- the synthetic single crystal diamond of the present invention is used as a cutting edge of a tool, it is relatively preferable to use an active brazing material containing titanium when brazing to a shank (tool body) using a brazing material. It is preferable because brazing can be performed at a low temperature.
- the synthetic single crystal diamond of the present invention has a light blue-green color because it contains almost no nitrogen and contains boron and nickel. For this reason, it is preferable to use it as jewelry
- a tool using the synthetic single crystal diamond of the present invention can obtain effects such as prolongation of life as a tool having high hardness, high hardness and wear resistance. Examples of such tools include bytes.
- jewelry using the synthetic single crystal diamond of the present invention can be highly evaluated as a light blue-green jewelry.
- the method of synthesizing a single crystal diamond according to the present invention is a method of synthesizing a single crystal diamond by a temperature difference method under an ultra-high pressure and high temperature, which comprises at least one of iron and cobalt. , 36% by weight of nickel, 12% by weight of titanium, 0.1% by weight of 0.12% by weight of boron, and 3-5. 5% by weight of a solvent having a graphite power Do.
- the solvent to 1 one 2 wt 0/0, preferably 1. about 5 weight 0/0 ( ⁇ 10%) is free Yes! / Ru nitrogen getter (titanium in the embodiment) Is contained as an impurity! / Reacts with scavenging nitrogen to prevent nitrogen from entering the diamond crystal. Further, even if an element such as copper is added to prevent the occurrence of inclusions, it does not enter into the diamond crystal as nitrogen getter force inclusion such as titanium. It is presumed that this is a force which contains 36 wt%, preferably 40 wt% of nickel occupying a position very close to copper in the periodic table in the solvent.
- nickel is atomic substitution type It penetrates into the diamond crystal below 10 ppm as an impurity.
- boron which is contained in an amount of about 0.1 to 0.2% by weight, preferably about 0.15% by weight, in a solvent also penetrates into a diamond crystal of 300 ppm or less as an atom substitution type impurity.
- the seed surface of the seed crystal be the (100) face of the diamond crystal, the uniform dispersion of boron and the contact force of the growth of the diamond crystal.
- the synthesis temperature is preferably 1350 ° C. at 30 ° C. from the viewpoint of appropriate penetration of nickel and boron as atomic substitution type impurities into the diamond crystal!
- the synthesis rate is preferably 3.1-3.8 mg Zhr (hour) from the viewpoint of economy and appropriate penetration of nickel and boron as atomic substitution type impurities into the diamond crystal. .
- a diamond jewelry article according to the present invention is produced using the above-mentioned synthetic single crystal diamond.
- the synthetic single crystal diamond of the present invention has a small amount of nitrogen introduced in the form of atomic substitution type in the synthetic single crystal diamond, so that the crystal strain is reduced, the hardness and the wear resistance are improved, and the preferred tool is Can be manufactured.
- nickel is contained in the solvent, the production cost can be reduced because the synthesis can be performed at a high growth rate.
- it can provide jewelry with high value because it exhibits a pale green color.
- the synthetic single crystal diamond of the present invention a synthetic single crystal having excellent wear resistance because it contains appropriate boron containing a small content of nitrogen contained in the crystal as an element substitution type impurity. Crystalline diamond is obtained. In addition, it is possible to obtain synthetic single crystal diamond excellent in wear resistance etc. which is useful as a cutting edge of a tool. In addition, synthetic single crystal diamond having appropriate conductivity can be obtained. In addition, since it contains nickel and boron in the crystal as impurities of element substitution type, it is a synthetic single crystal diamond that exhibits a valuable pale blue-green color for jewelry. You will get Also, the above synthetic single crystal diamond can be obtained at low cost.
- FIG. 1 is a diagram showing the Knoop hardness in the (100) face 100> direction of synthetic diamond.
- FIG. 2 is a view showing the Knoop hardness of each direction on the (100) plane of various diamonds.
- FIG. 3 is a schematic view of a synthetic single crystal diamond synthesis apparatus according to a third embodiment of the present invention.
- FIG. 4A is a side view showing a blade tip of a tool using a synthetic single crystal diamond in a third embodiment of the present invention.
- FIG. 4B is a plan view of the cutting edge of the tool shown in FIG. 4A.
- FIG. 5 is a perspective view of a dresser using synthetic single crystal diamond in a third embodiment of the present invention.
- FIG. 6 is a schematic view of a synthetic single crystal diamond synthesis apparatus according to Embodiment 4 of the present invention.
- FIG. 7A is a side view showing a blade tip of a tool using a synthetic single crystal diamond in a fourth embodiment of the present invention.
- FIG. 7B is a plan view of the cutting edge of the tool shown in FIG. 7A.
- the obtained diamond crystals are colorless and transparent, and have an ultraviolet-visible spectrum and an infrared spectrum. Also, almost no absorption by impurities such as nitrogen was observed, and it was a high purity Ila type crystal with an impurity of 0.1 ppm or less. In addition, it was confirmed by polarization microscope observation that there are almost no crystal defects by X-ray topographic observation in which internal distortion is almost negligible.
- a diamond bite was produced as follows from the diamond crystal obtained as described above.
- the diamond crystal was processed to a length of 3 mm, a width of 1 mm, and a thickness of 1 mm, and this was brazed to a Neut shank.
- an active brazing material containing Ti for brazing since brazing can be performed at a relatively low temperature and the thermal deterioration of the surface of the single crystal diamond is reduced.
- the brazing layer between the diamond material and the shank is 100 ⁇ m or more, the residual stress at the time of brazing to the tip of the produced tool is reduced, which is preferable.
- the upper and lower surfaces were (100) to secure the brazed surface of the single crystal diamond material. After that, a diamond bit with a cutting edge RlO / z n ⁇ tip angle of 45 degrees was produced.
- the polishing process is facilitated, and the strength and blade standability of the tip end portion of the tool can be improved.
- a diamond skiving apparatus was used to produce a diamond turning tool, and a diamond free pellet was placed on a iron plate to rotate at high speed.
- the cutting edge of the cutting edge of the diamond cutting tool manufactured as described above was such that no microchips of several microns or less could be confirmed at all.
- the diamond bit is attached to a precision lathe, and as a result of cutting the metal Ni part coated on the mold surface at a rotational speed of 800 rpm, a feed rate of 0.3 ⁇ m Zr, and a cut of 1 ⁇ m, a feed mark can be seen. A highly accurate mirror surface was obtained.
- a high purity Ila-type diamond single crystal of about 0.8 carat was synthesized in the same manner as in Embodiment 1 except that the amount of nitrogen getter Ti added was 1.5% by weight.
- the obtained diamond crystals had a pale yellowish color, and the ultraviolet and visible spectrum showed a slight absorption by the isolated substitutional nitrogen impurity, and the nitrogen impurity amount was about 2.8 ppm. It was confirmed by polarization microscope observation that there is almost no crystal defect by X-ray topograph observation with almost no internal strain.
- a diamond bit was produced in the same manner as in the first embodiment.
- the cutting edge of this diamond cutting tool is several microns or so It was impossible to confirm a minute chip of the following size.
- the diamond bit was attached to a precision lathe, and the metal Ni portion plated on the die surface was cut under the same conditions as in Embodiment 1, and a feed mark was not seen and a highly accurate mirror surface was obtained.
- Diamond was synthesized in the same manner as in Embodiment 1 except that a nitrogen getter was not used.
- the obtained diamond was yellowish in lb type crystals containing about 1 carat of nitrogen impurity.
- the nitrogen content estimated from the infrared absorption spectrum was about 60 ppm.
- an ultraprecision cutting tool was produced in the same manner as in Embodiment 1. Compared with the cutting tool of the first embodiment, it was inferior in abrasion resistance, and its cutting ability was much better.
- FIG. 3 shows a diamond synthesis apparatus of the present embodiment.
- 11 is a carbon source
- 12 is a solvent metal
- 13 is a seed crystal
- 14 is an insulator
- 15 is a graphite heater
- 16 is a pressure medium.
- the solvent metal 12 contains 42% by weight of nickel as an essential component and 1.5% by weight of titanium as a nitrogen getter.
- the balance was 53% by weight of iron, 5% by weight of cobalt, and 4.5% by weight of graphite, and they all used high purity powders with particle sizes of 50 to 100 microns.
- the mixing ratio of iron and cobalt has considerable freedom.
- the seed crystal the (100) face of the synthetic diamond granules was used as the seed face.
- the obtained single crystal diamond was measured for absorption of ultraviolet visible spectrum and infrared spectrum with large (100) plane, and it was confirmed that nitrogen was 3 ppm or less and nickel was lO ppm or less. . However, since it has a pale green color, it seems that nickel contains at least 1 ppm, which is the concentration at which pale green color starts to appear, and 1.5 to 2 ppm.
- a synthetic single crystal diamond material having a length of 5 mm, a width of 1 mm, and a thickness of 1 mm was prepared for the cutting edge. Furthermore, this material was brazed to the shank.
- the active brazing material containing titanium was used for this brazing. The active brazing material containing titanium can be brazed at a relatively low temperature, so that the thermal deterioration of the surface of the single crystal diamond is reduced.
- the thickness of the solder layer is set to 100 m or more so that thermal stress does not remain at the tip of the cutting tool.
- the upper and lower surfaces of the diamond material were (100) surfaces.
- the blade is shown in FIGS. 4A and 4B.
- 21 is a synthetic single crystal diamond of the cutting edge.
- R is the tip diameter
- the rake angle ex is 20 degrees
- the tip angle ⁇ is 30 degrees.
- 22 is a brazing layer containing titanium.
- 23 is a shank tip.
- the diamond raw stone synthesized by the above-described apparatus and method is cleaved along the (111) plane to a thickness of 0.8 mm, cut with a laser, and the length is 3 mm, the width is 0.8 mm, and the thickness is 0. I made an 8 mm strip material. Three pieces of the strip-like material were placed in a powder for sintering mainly composed of nickel and sintered.
- the long surface portion is a cleavage plane (111) and a laser cutting plane (110), and the dressing plane is a (211) plane.
- the end face of the test piece made of a strip-like material becomes a dressing surface, so it becomes parallel to the polishing direction 110>.
- This dresser is shown in FIG. In FIG. 5, 31 is a strip-shaped synthetic single crystal diamond material, and 32 is a sintered portion thereof.
- This dresser is used at a grinding wheel peripheral speed of 1500 rpm, and a grinding stone SN80N8V51S (manufactured by Noritake, 405 ⁇ 50).
- Amount of wear by reciprocating for 20 minutes in a direction parallel to the axis of rotation of the grinding wheel under wet conditions grinding oil: Nori Takekuru NK88) of X 127 mm
- depth of cut 0. I mm Z pass, feed 0.5 mm Z rev was measured.
- the amount of wear was also measured for a dresser using conventional synthetic single crystal diamond under the same conditions.
- the results are as shown in Table 2, and it has been confirmed that the synthetic single crystal diamond of the present embodiment is suitable as a dresser material whose wear amount is significantly less than that of a conventional synthetic single crystal diamond.
- FIG. 6 shows an apparatus for synthesizing single crystal diamond of the present embodiment.
- 11 is a carbon source
- 12 is a solvent metal
- 13 is a seed crystal
- 14 is an insulator
- 15 is a black ship heater
- 16 is a pressure medium.
- Graphite was used as the carbon source 11.
- the solvent metal 12 contains 42% by weight of nickel as an essential component, 0.15% by weight of boron, and 1.5% by weight of titanium as a nitrogen getter.
- the balance was 46.85% by weight of iron, 5% by weight of cobalt and about 4.5% by weight of graphite, all of which used high purity powders with particle sizes of 50 to 100 microns. The mixing ratio of iron and cobalt can be changed to a considerable extent.
- the seed crystal the (100) face of the synthetic diamond particle was used as the seed face.
- the synthetic single crystal diamond thus obtained had a nitrogen content of 3 ppm or less, a boron content of 50 ppm, and a nickel content of ⁇ pm or less according to the UV-visible spectrum and the infrared spectrum having a large (100) plane.
- the color of the diamond crystal is a pale blue-green mixed with the green color derived from nickel in addition to the blue color derived from boron, it is considered that at least lppm of nickel is contained.
- the internal strain was mostly strong.
- the crystal defects were almost forceless.
- the electrical resistance of the diamond single crystal was measured, it was 10 to 100 ⁇ ′ cm, and it was confirmed that the diamond single crystal had appropriate conductivity.
- a synthetic single crystal diamond material having a length of 5 mm, a width of 1 mm and a thickness of 1 mm was produced for the cutting edge of a diamond end mill. Furthermore, this material was brazed to the shank. An active brazing material containing titanium was used for this brazing. This brazing material can be brazed at a relatively low temperature, which reduces the thermal degradation of the synthetic single crystal diamond surface.
- the thickness of the solder layer was set to 100 / z m or more so that thermal stress did not remain at the tip of the diamond bit. Furthermore, in order to secure a brazed surface, the upper and lower surfaces of the diamond material were (100) surfaces.
- the cutting edge is shown in FIGS. 7A and 7B.
- 21 is a synthetic single crystal diamond of the cutting edge.
- R is the diameter of the tip, the rake angle ex is 20 degrees, and the tip angle ⁇ is 30 degrees.
- 22 is a brazing layer containing titanium.
- 23 is a shank tip.
- This diamond bit is attached to a precision lathe, and it is fitted on the surface of a metal mold under cutting conditions of a diameter of 5 mm, a rotational speed of 3000 rpm, a feed rate of 0.3 ⁇ m Zr, and a cut of 0.1 ⁇ m. Precision cutting was performed to obtain a highly accurate mirror surface.
- the tool life was 58 pieces under the same cutting conditions.
- the tool life of the present invention was 85 pieces.
- the synthetic single crystal diamond of the present embodiment is suitable as a material for the cutting edge of the tool. Since the synthetic single crystal diamond of the present embodiment has appropriate conductivity, it can be measured by measuring the electrical resistance of the tool when it is attached to a facility capable of automatic tool replacement. It becomes possible to determine the presence or absence of contact with the work. This also facilitates tool management and product quality control.
- a round brilliant cut process was performed by a skiff grinding machine on a synthetic single crystal diamond of 1. 2 carat synthesized by the above-described apparatus and method.
- the obtained 0.36-carat synthetic single crystal diamond for jewelry had no chipping and no cracking, and was a slightly green and bright diamond.
- the present invention can be effectively applied to diamond tools, synthetic single crystal diamonds and methods of synthesizing single crystal diamonds, and diamond jewelry.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04792179A EP1671726B1 (en) | 2003-10-10 | 2004-10-08 | Diamond tool |
EP12156599.8A EP2468392B1 (en) | 2003-10-10 | 2004-10-08 | Diamond tool, synthetic single crystal diamond and method for synthesizing single crystal diamond, and diamond jewelry |
US10/572,708 US7404399B2 (en) | 2003-10-10 | 2004-10-08 | Diamond tool, synthetic single crystal diamond and method of synthesizing single crystal diamond, and diamond jewelry |
JP2005514609A JP4732169B2 (ja) | 2003-10-10 | 2004-10-08 | ダイヤモンド工具および単結晶ダイヤモンドの合成方法 |
Applications Claiming Priority (6)
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JP2003351497 | 2003-10-10 | ||
JP2003-351497 | 2003-10-10 | ||
JP2004282692 | 2004-09-28 | ||
JP2004-282692 | 2004-09-28 | ||
JP2004-282579 | 2004-09-28 | ||
JP2004282579 | 2004-09-28 |
Publications (1)
Publication Number | Publication Date |
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WO2005035174A1 true WO2005035174A1 (ja) | 2005-04-21 |
Family
ID=34437598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2004/014910 WO2005035174A1 (ja) | 2003-10-10 | 2004-10-08 | ダイヤモンド工具、合成単結晶ダイヤモンドおよび単結晶ダイヤモンドの合成方法ならびにダイヤモンド宝飾品 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7404399B2 (ja) |
EP (2) | EP2468392B1 (ja) |
JP (1) | JP4732169B2 (ja) |
WO (1) | WO2005035174A1 (ja) |
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JP2005302781A (ja) * | 2004-04-06 | 2005-10-27 | Tecdia Kk | ダイヤモンドスクライバ及びそのポイント部作製方法 |
JP2008542168A (ja) * | 2005-05-25 | 2008-11-27 | カーネギー インスチチューション オブ ワシントン | 高成長速度での無色単結晶cvdダイヤモンド |
JP2009512567A (ja) * | 2005-10-19 | 2009-03-26 | スリーエム イノベイティブ プロパティズ カンパニー | 微細複製工具を作製するための整列マルチダイヤモンド切削工具組立体 |
JP2009518259A (ja) * | 2004-12-09 | 2009-05-07 | エレメント シックス テクノロジーズ (プロプライアタリー)リミテッド | ダイヤモンド結晶の結晶完全性を改良する方法 |
WO2013031907A1 (ja) * | 2011-09-02 | 2013-03-07 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびその製造方法 |
JP2013202446A (ja) * | 2012-03-27 | 2013-10-07 | Sumitomo Electric Ind Ltd | 単結晶ダイヤモンドおよびその製造方法 |
CN113005516A (zh) * | 2015-10-19 | 2021-06-22 | 住友电气工业株式会社 | 单晶金刚石、使用单晶金刚石的工具以及单晶金刚石的制造方法 |
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- 2004-10-08 WO PCT/JP2004/014910 patent/WO2005035174A1/ja active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
EP2468392A3 (en) | 2016-11-16 |
JP4732169B2 (ja) | 2011-07-27 |
US20070033810A1 (en) | 2007-02-15 |
EP1671726B1 (en) | 2013-02-13 |
EP2468392A2 (en) | 2012-06-27 |
EP1671726A1 (en) | 2006-06-21 |
EP1671726A4 (en) | 2007-07-25 |
US7404399B2 (en) | 2008-07-29 |
EP2468392B1 (en) | 2019-04-03 |
JPWO2005035174A1 (ja) | 2006-12-21 |
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