CN102194844B - 固态图像传感器 - Google Patents

固态图像传感器 Download PDF

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Publication number
CN102194844B
CN102194844B CN201110060175.8A CN201110060175A CN102194844B CN 102194844 B CN102194844 B CN 102194844B CN 201110060175 A CN201110060175 A CN 201110060175A CN 102194844 B CN102194844 B CN 102194844B
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China
Prior art keywords
metal wiring
wiring layer
metal
solid
state image
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Expired - Fee Related
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CN201110060175.8A
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English (en)
Chinese (zh)
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CN102194844A (zh
Inventor
青木武志
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201110060175.8A 2010-03-17 2011-03-14 固态图像传感器 Expired - Fee Related CN102194844B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010-061233 2010-03-17
JP2010061233 2010-03-17
JP2011-031260 2011-02-16
JP2011031260A JP2011216865A (ja) 2010-03-17 2011-02-16 固体撮像装置

Publications (2)

Publication Number Publication Date
CN102194844A CN102194844A (zh) 2011-09-21
CN102194844B true CN102194844B (zh) 2014-01-08

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CN201110060175.8A Expired - Fee Related CN102194844B (zh) 2010-03-17 2011-03-14 固态图像传感器

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US (1) US9024405B2 (https=)
JP (1) JP2011216865A (https=)
CN (1) CN102194844B (https=)

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JPWO2012144196A1 (ja) * 2011-04-22 2014-07-28 パナソニック株式会社 固体撮像装置
JP2013070030A (ja) * 2011-09-06 2013-04-18 Sony Corp 撮像素子、電子機器、並びに、情報処理装置
JP2013157367A (ja) * 2012-01-27 2013-08-15 Sony Corp 撮像素子、製造装置および方法、並びに、撮像装置
JP6116878B2 (ja) * 2012-12-03 2017-04-19 ルネサスエレクトロニクス株式会社 半導体装置
US8907385B2 (en) 2012-12-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Surface treatment for BSI image sensors
CN103337502A (zh) * 2013-05-14 2013-10-02 上海集成电路研发中心有限公司 一种版图结构、暗像素结构及其形成方法
US9768221B2 (en) * 2013-06-27 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structure layout for semiconductor device
JP6148580B2 (ja) * 2013-09-03 2017-06-14 キヤノン株式会社 撮像装置及びカメラ
JP6226683B2 (ja) 2013-10-09 2017-11-08 キヤノン株式会社 撮像装置
JP6226682B2 (ja) * 2013-10-09 2017-11-08 キヤノン株式会社 撮像装置およびその製造方法
JP6506536B2 (ja) * 2014-11-11 2019-04-24 キヤノン株式会社 半導体装置及びその製造方法、ならびにカメラ
JP6744748B2 (ja) 2016-04-06 2020-08-19 キヤノン株式会社 固体撮像装置及びその製造方法
US10319765B2 (en) * 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
US10763298B2 (en) 2016-10-28 2020-09-01 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image pickup system
JP2019040965A (ja) * 2017-08-24 2019-03-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法
JP6625107B2 (ja) * 2017-10-11 2019-12-25 キヤノン株式会社 撮像装置
KR102451725B1 (ko) * 2017-12-20 2022-10-07 삼성디스플레이 주식회사 디스플레이 장치
CN108831897B (zh) * 2018-05-04 2021-04-13 上海华力集成电路制造有限公司 暗像素结构
US11244978B2 (en) 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
US11121160B2 (en) 2018-10-17 2021-09-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region
JP2021141138A (ja) 2020-03-03 2021-09-16 キオクシア株式会社 半導体装置
WO2021192600A1 (ja) * 2020-03-24 2021-09-30 パナソニックＩｐマネジメント株式会社 固体撮像素子
CN113471226B (zh) * 2020-03-31 2024-12-10 比亚迪半导体股份有限公司 一种图像传感器及电子设备
CN113644083A (zh) * 2021-07-27 2021-11-12 上海华力集成电路制造有限公司 改善背照式cmos图像传感器的晶圆色差的制造方法

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JPH02143560A (ja) 1988-11-25 1990-06-01 Toshiba Corp 積層型固体撮像装置
JP2001196571A (ja) 2000-01-07 2001-07-19 Sony Corp 固体撮像素子
JP3542545B2 (ja) * 2000-06-08 2004-07-14 キヤノン株式会社 固体撮像装置
JP4383959B2 (ja) * 2003-05-28 2009-12-16 キヤノン株式会社 光電変換装置およびその製造方法
JP2004363375A (ja) * 2003-06-05 2004-12-24 Renesas Technology Corp 固体撮像素子
KR100653691B1 (ko) * 2004-07-16 2006-12-04 삼성전자주식회사 적어도 메인 화소 어레이 영역의 전면을 노출시키는패시베이션막을 갖는 이미지 센서들 및 그 제조방법들
KR100614793B1 (ko) * 2004-09-23 2006-08-22 삼성전자주식회사 이미지 센서 및 이의 제조 방법.
US7598581B2 (en) * 2005-09-12 2009-10-06 Crosstek Capital, LLC Image sensor with decreased optical interference between adjacent pixels
JP2007134664A (ja) 2005-10-12 2007-05-31 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2007128979A (ja) * 2005-11-01 2007-05-24 Canon Inc 固体撮像装置及びその製造方法
JP2007141873A (ja) * 2005-11-14 2007-06-07 Sony Corp 固体撮像素子、撮像装置、及び固体撮像素子の製造方法
JP2007184311A (ja) * 2005-12-29 2007-07-19 Sony Corp 固体撮像装置およびその製造方法
CN101127323B (zh) 2006-08-15 2011-06-22 联华电子股份有限公司 图像感测元件及其制法
JP5305622B2 (ja) * 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法
JP4994751B2 (ja) 2006-09-07 2012-08-08 キヤノン株式会社 撮像装置
JP2008270423A (ja) * 2007-04-18 2008-11-06 Rosnes:Kk 固体撮像装置
JP2009094299A (ja) * 2007-10-09 2009-04-30 Nikon Corp 固体撮像素子
JP4799522B2 (ja) * 2007-10-12 2011-10-26 株式会社東芝 撮像装置
JP4735643B2 (ja) 2007-12-28 2011-07-27 ソニー株式会社 固体撮像装置、カメラ及び電子機器
JP5493316B2 (ja) * 2008-01-17 2014-05-14 ソニー株式会社 固体撮像装置およびその製造方法
JP4725614B2 (ja) * 2008-01-24 2011-07-13 ソニー株式会社 固体撮像装置
JP4770857B2 (ja) * 2008-03-27 2011-09-14 日本テキサス・インスツルメンツ株式会社 半導体装置
JP2009283482A (ja) 2008-05-19 2009-12-03 Sony Corp 固体撮像装置
JP5198150B2 (ja) 2008-05-29 2013-05-15 株式会社東芝 固体撮像装置
KR20090128899A (ko) * 2008-06-11 2009-12-16 크로스텍 캐피탈, 엘엘씨 후면 조사 이미지 센서 및 그 제조방법

Also Published As

Publication number Publication date
JP2011216865A (ja) 2011-10-27
US20110227182A1 (en) 2011-09-22
CN102194844A (zh) 2011-09-21
US9024405B2 (en) 2015-05-05

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