CN102187479B - 半导体光学元件阵列及其制造方法 - Google Patents

半导体光学元件阵列及其制造方法 Download PDF

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CN102187479B
CN102187479B CN200980141161.XA CN200980141161A CN102187479B CN 102187479 B CN102187479 B CN 102187479B CN 200980141161 A CN200980141161 A CN 200980141161A CN 102187479 B CN102187479 B CN 102187479B
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CN102187479A (zh
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岸野克巳
菊池昭彦
关口宽人
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Sophia School Corp
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CN200980141161.XA 2008-09-01 2009-08-27 半导体光学元件阵列及其制造方法 Active CN102187479B (zh)

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Application Number Priority Date Filing Date Title
JP2008-224131 2008-09-01
JP2008-224129 2008-09-01
JP2008224129 2008-09-01
JP2008224131 2008-09-01
PCT/JP2009/004173 WO2010023921A1 (ja) 2008-09-01 2009-08-27 半導体光素子アレイおよびその製造方法

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CN102187479A CN102187479A (zh) 2011-09-14
CN102187479B true CN102187479B (zh) 2014-06-18

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US (1) US9224595B2 (https=)
EP (1) EP2333847B1 (https=)
JP (2) JP5547076B2 (https=)
KR (1) KR101567121B1 (https=)
CN (1) CN102187479B (https=)
TW (1) TWI470828B (https=)
WO (1) WO2010023921A1 (https=)

Cited By (1)

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JP6873409B2 (ja) * 2016-04-21 2021-05-19 富士通株式会社 発光素子及びその製造方法
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