CN102177273A - 用于形成平板显示器用配线膜的溅射靶 - Google Patents
用于形成平板显示器用配线膜的溅射靶 Download PDFInfo
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 13
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 58
- 239000010949 copper Substances 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 75
- 239000010409 thin film Substances 0.000 claims description 23
- 238000009826 distribution Methods 0.000 description 32
- 239000011521 glass Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 15
- 230000006978 adaptation Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本发明的平板显示器的铜合金配线膜以及用于形成该铜合金配线膜的溅射靶具有如下组成:含有Mg:0.1~5原子%,还含有Mn和Al中的1种或2种总计:0.1~11原子%,根据需要含有P:0.001~0.1原子%,余部由Cu和不可避免的杂质构成。
Description
技术领域
本发明涉及可形成比电阻值在整个表面上均一的平板显示器用配线膜的溅射靶以及用该靶成膜得到的平板显示器用配线膜。
本申请基于2008年8月1日在日本提出申请的日本特愿2008-199559号及2009年7月2日在日本提出申请的日本特愿2009-157493号主张优先权,在此引用其内容。
背景技术
作为液晶显示器、等离子显示器、有机EL显示器、无机EL显示器等平板显示器的配线膜,使用的是铜合金配线膜,例如,已知形成有铜合金配线膜的液晶显示装置,该铜合金配线膜含有Mg:1~5原子%,余部由Cu和不可避免的杂质构成(参照专利文献1)。
此外,还已知分别单独包含添加元素Al:1原子%以下、Si:0.5原子%以下、Be:2原子%以下、Cr:2原子%以下、Mg:2原子%以下、Sn:0.5原子%以下、Zn:4原子%以下、Ce:2原子%以下的铜合金配线膜的耐迁移性优良,也已知这些铜合金配线膜是使用含有与这些铜合金配线膜相同成分的靶、通过溅射而形成的(参照专利文献2)。
对于前述平板显示器中的铜合金配线膜,在玻璃基板上通过溅射而成膜后,进行热处理。进行该热处理时,铜合金配线膜所含的添加元素变成氧化物而向铜合金配线膜的表面和背面迁移,在铜合金配线膜的表面和背面形成添加元素的氧化物层。该添加元素的氧化物层的生成会阻止作为玻璃基板基本成分的Si等向铜合金配线膜扩散渗透,并防止铜合金配线膜的比电阻的增加,同时该添加元素的氧化物层的生成会提高铜合金配线膜对玻璃基板的密合性。
现有技术文献
专利文献1:日本特开平9-43628号公报
专利文献2:日本特开平6-97164号公报
发明内容
发明要解决的问题
近年来,平板显示器越来越大型化,50英寸以上的大型液晶面板正逐渐开始批量生产。为此,逐渐开始在宽玻璃基板表面通过溅射形成铜合金配线膜,但在宽玻璃基板表面通过溅射形成的铜合金配线膜的比电阻值会因位置而产生偏差,该趋势在用含Mg的铜合金靶形成的铜合金配线膜中表现显著。
解决问题的手段
于是,本发明人等为了开发出通过溅射形成的铜合金配线膜的比电阻值因位置而产生的偏差少的含Mg的铜合金制靶、并用该靶获得平板显示器中的铜合金配线膜而进行了研究。其结果得到了如下所述的研究成果:对于使用具有在纯铜(特别是纯度:99.99%以上的无氧铜)中含有0.1~5原子%的Mg、还含有总计0.1~11原子%的Mn和Al中的1种或2种的成分组成的铜合金靶进行溅射而得的铜合金薄膜,与使用现有的具有含有Mg:1~5原子%、余部由Cu和不可避免的杂质构成的组成的铜合金靶进行溅射而成膜的铜合金薄膜相比,可获得比电阻值的偏差少、具有整体均一的比电阻值的铜合金薄膜。
本发明是基于上述研究成果而完成的发明,具有以下特征。
第一实施方式是用于形成平板显示器用配线的溅射靶,该溅射靶具有如下组成:含有Mg:0.1~5原子%,还含有Mn和Al中的1种或2种总计:0.1~11原子%,余部由Cu和不可避免的杂质构成。
另一实施方式是由铜合金薄膜构成的平板显示器用配线膜,该铜合金薄膜是通过使用第一实施方式中记载的溅射靶进行溅射而成膜得到的铜合金薄膜,其具有如下组成:含有Mg:0.1~5原子%,还含有Mn和Al中的1种或2种总计:0.1~11原子%,余部由Cu和不可避免的杂质构成。
构成前期平板显示器的配线的铜合金薄膜是通过使用靶进行溅射而制造的。该靶例如通过以下方式制作:首先将纯度99.99%以上的无氧铜在惰性气体气氛中、在高纯度石墨坩锅内高频熔化,在所得熔液中添加0.1~5原子%的Mg,进一步添加总计0.1~11原子%的Mn和Al中的1种或2种并熔化,将所得熔液在惰性气体气氛中铸造而使其凝固后,进而进行热轧,最后实施去应力退火。通过将如此得到的靶接合于背板,在常规条件下进行溅射,从而可形成前期的平板显示器用铜合金薄膜。
对如前述那样限定本发明的溅射靶和用该靶成膜得到的铜合金薄膜的成分组成的范围的原因进行说明。
(a)靶的成分组成:
之所以将靶所含的Mg限定为0.1~5原子%,并且将Mn和Al中的1种或2种限定为总计0.1~11原子%,是因为使用以共存方式含有0.1~5原子%的Mg以及总计0.1~11原子%的Mn和Al中的1种或2种的靶进行溅射时,成膜得到的铜合金薄膜因位置而产生的比电阻值的偏差变少的缘故。即使含有不足0.1原子%的Mg、总计不足0.1原子%的Mn和Al中的1种或2种,也无法获得所希望的效果,故不优选。另一方面,使用添加了超过5原子%的Mg、总计超过11原子%的Mn和Al中的1种或2种的靶进行溅射时,无法观察到所希望特性的进一步提高,特别是成膜得到的铜合金薄膜的电阻升高,故不优选。
(b)铜合金薄膜的成分组成:
Mg:
Mg使晶粒微细化,抑制构成平板显示器中的配线膜的铜合金薄膜产生小丘(hillock)和空隙等热缺陷,提高耐迁移性,而且Mg在热处理时在铜合金薄膜的表面和背面形成Mg氧化物层而阻止作为玻璃基板主成分的Si等向铜合金配线膜扩散渗透,并防止铜合金配线膜的比电阻的增加,同时提高铜合金配线膜对玻璃基板的密合性。Mg含量不足0.1原子%时,无法获得所希望的效果,故不优选。另一方面,即使含有含量超过5原子%的Mg,也观察不到特性的提高,而且比电阻值增加,作为配线膜无法显示出足够的功能,故不优选。因此,将铜合金薄膜所含的Mg的含量规定为0.1~5原子%。
Mn、Al:
通过以与Mg共存的方式含有这些成分,从而在铜合金薄膜的表面和背面形成Mg与Mn和/或Al的复合氧化物或氧化物固溶体,并进一步提高对玻璃基板表面的密合性。而且由于形成于铜合金薄膜的表面和背面的氧化物含有化学稳定性高的Mg与Mn和/或Al的复合氧化物或氧化物固溶体,而使铜合金配线的化学稳定性提高。将这些成分中的1种或2种以总计不足0.1原子%添加时,无法获得密合性提高的效果,故不优选。另一方面,即使添加总计超过11原子%的Mn、Al,也观察不到特性的提高,而且配线膜的比电阻值升高,故不优选。
P:
少量的P使铜合金的铸造变得容易而不会使铜合金薄膜所要求的比电阻、小丘、空隙、密合性等特性变差,因此根据需要添加。但是,即使添加不足0.001原子%的P也没有效果,另一方面,即使添加超过0.1原子%的P,铸造性也没有提高。因此,将P含量规定为0.001~0.1原子%。
发明效果
使用本发明的靶进行溅射时,即使玻璃基板变大,成膜得到的铜合金薄膜因位置而产生的比电阻值的偏差也少,而且对玻璃基板表面的密合性提高且比电阻值低,因此可形成高精细化且大型化的平板显示器的铜合金配线膜。
具体实施方式
准备纯度99.99质量%的无氧铜,将该无氧铜在Ar气气氛中、在高纯度石墨坩锅内高频熔化。在所得熔液中添加Mg、Mn、Al,进一步根据需要添加P,熔解并进行成分调节,使其成为具有表1中所示的成分组成的熔液。将所得熔液在经冷却的碳铸型中铸造,进而进行热轧后,最后实施去应力退火,对所得轧制体的表面进行车床加工以制作具有外径:200mm×厚度:10mm的尺寸且具有表1中所示成分组成的圆板状的本发明铜合金溅射靶(以下称为本发明靶)1~25以及比较铜合金溅射靶(以下称为比较靶)1~4以及现有溅射靶(以下称为现有靶)1。
进而准备无氧铜制背板,在该无氧铜制背板上重叠前述本发明靶1~25、比较靶1~4及现有靶1,通过以温度:200℃进行铟焊接,从而将本发明靶1~25、比较靶1~4及现有靶1接合于无氧铜制背板以制作带背板的靶。
将本发明靶1~25、比较靶1~4及现有靶1焊接于无氧铜制背板而得到带背板的靶,将该带背板的靶设置为使靶与玻璃基板(具有直径:200mm、厚度:0.7mm的尺寸的康宁公司制1737玻璃基板)的距离为70mm。
在电源:直流方式、
溅射功率:600W、
极限真空度:4×10-5Pa、
气氛气体组成:Ar:90容量%、氧:10容量%的混合气体、
气压:0.2Pa、
玻璃基板加热温度:150℃、
的条件下在玻璃基板的表面形成具有半径:100mm、厚度:300nm的尺寸且具有表2~3中所示成分组成的均为圆形的本发明铜合金配线用薄膜(以下称为本发明配线用薄膜)1~25以及比较铜合金配线用薄膜(以下称为比较配线用薄膜)1~4以及现有铜合金配线用薄膜(以下称为现有配线用薄膜)1。将所得的本发明配线用薄膜1~25、比较配线用薄膜1~4及现有配线用薄膜1分别装入加热炉,在Ar气氛中实施升温速度:5℃/min、最高温度:350℃、保持30分钟的热处理。通过四探针法测定所得的均为圆形的本发明配线用薄膜1~25、比较配线用薄膜1~4及现有配线用薄膜1的中心、距中心50mm的点及距中心100mm的点的比电阻,求出其最大值和最小值之差。这些结果示于表2~3,评价配线用薄膜的比电阻值的偏差。
进而,以JIS-K5400为基准,实施如下的棋盘格附着试验:以1mm的间隔在本发明配线用薄膜1~25、比较配线用薄膜1~4及现有配线用薄膜1上以棋盘格状划出切口后,用3M公司制Scotch胶带剥离,测定玻璃基板中央部10mm见方范围内附着于玻璃基板的配线用薄膜的面积%。其结果示于表2~3,评价本发明配线用薄膜1~25、比较配线用薄膜1~4及现有配线用薄膜1对玻璃基板的密合性。
对于这些实施了热处理的本发明配线用薄膜1~25、比较配线用薄膜1~4及现有配线用薄膜1的表面,用5000倍的SEM观察5处的膜表面,观察有无小丘和空隙的产生。其结果示于表2~3。
[表1]
*标记表示脱离本发明的范围的值。
[表2]
[表3]
由表1~3中所示的结果可知以下事项。
(i)通过使用单独含有Mg的现有靶1进行溅射而成膜得到的现有配线用薄膜1,中心部的比电阻与周边部的比电阻之差大,而且对玻璃基板的密合性差。与之相对,含有Mg以及Mn和Al中的1种或2种的本发明配线用薄膜1~25,中心部的比电阻与周边部的比电阻之差小,因此比电阻值的偏差少,而且对玻璃基板的密合性优良。(ii)脱离本发明的条件而使用含Mg及Mn少的比较靶1进行溅射而成膜得到的比较配线用薄膜1以及脱离本发明的条件而使用含Mg及A1少的比较靶2进行溅射而成膜得到的比较配线用薄膜2的密合性低。而且因为产生小丘和空隙,所以容易发生迁移,故不优选,另一方面,Mg以及Mn和Al的总计脱离本发明的条件而较多含有的比较配线用薄膜3~4的比电阻值过大,作为配线用薄膜不优选。
Claims (4)
1.用于形成平板显示器用配线膜的溅射靶,其具有如下组成:含有Mg:0.1~5原子%,还含有Mn和Al中的1种或2种总计:0.1~11原子%,余部由Cu和不可避免的杂质构成。
2.由铜合金薄膜构成的平板显示器用配线膜,所述铜合金薄膜具有如下组成:含有Mg:0.1~5原子%,还含有Mn和Al中的1种或2种总计:0.1~11原子%,余部由Cu和不可避免的杂质构成。
3.用于形成平板显示器用配线膜的溅射靶,其具有如下组成:含有Mg:0.1~5原子%,还含有Mn和Al中的1种或2种总计:0.1~11原子%,进而含有P:0.001~0.1原子%,余部由Cu和不可避免的杂质构成。
4.由铜合金薄膜构成的平板显示器用配线膜,所述铜合金薄膜具有如下组成:含有Mg:0.1~5原子%,还含有Mn和Al中的1种或2种总计:0.1~11原子%,进而含有P:0.001~0.1原子%,余部由Cu和不可避免的杂质构成。
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JP2010053445A (ja) | 2010-03-11 |
KR102118816B1 (ko) | 2020-06-03 |
TW201022459A (en) | 2010-06-16 |
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US9212419B2 (en) | 2015-12-15 |
US20110281134A1 (en) | 2011-11-17 |
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US20150136595A1 (en) | 2015-05-21 |
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