TW201631168A - 銅基合金濺鍍靶材 - Google Patents
銅基合金濺鍍靶材 Download PDFInfo
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- TW201631168A TW201631168A TW104132258A TW104132258A TW201631168A TW 201631168 A TW201631168 A TW 201631168A TW 104132258 A TW104132258 A TW 104132258A TW 104132258 A TW104132258 A TW 104132258A TW 201631168 A TW201631168 A TW 201631168A
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- copper
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- protective layer
- sputtering target
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- 239000010949 copper Substances 0.000 title claims abstract description 83
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 73
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 238000005477 sputtering target Methods 0.000 title claims abstract description 40
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 30
- 239000000956 alloy Substances 0.000 title claims abstract description 30
- 239000011241 protective layer Substances 0.000 claims abstract description 59
- 238000000137 annealing Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 239000000470 constituent Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 150000001879 copper Chemical class 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 229910052718 tin Inorganic materials 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910000881 Cu alloy Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010273 cold forging Methods 0.000 description 1
- 238000010835 comparative analysis Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
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- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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Abstract
本發明之銅基合金濺鍍靶材包含4質量%以上且16質量%以下之錫、及4質量%以上且11質量%以下之鋁,且剩餘部分包含銅及無法避免之雜質。本發明之靶材,於將使用該靶材直接形成於玻璃基板上之保護層之退火前的於室溫(25℃)下之體積電阻率設為R1,將於大氣環境下以350℃將上述保護層退火30分鐘後之體積電阻率設為R2時,較佳R1>R2。
Description
本發明係關於一種銅基合金濺鍍靶材。
液晶顯示器或電漿顯示器等平板顯示器具有大量薄膜電晶體(TFT),其配線使用鋁之情形居多。近年來,平板顯示器大型化或高精細化,因此信號高速化之要求提高。為了應對該要求,必須將TFT之配線進一步低電阻化。
就配線之低電阻化之觀點而言,一直使用作為電阻低於鋁之金屬之銅作為配線材料。銅本身之電阻低於鋁,但存在如下缺陷:若暴露於高溫之大氣或包含氧之環境,則容易被氧化,因此導致高電阻化。
就防止銅配線之氧化之觀點而言,提出有於銅配線之表面設置保護層之方法。例如於專利文獻1中,記載有使用包含Cr、Ti、V、Al、Ta、Co、Zr、Nb、Mo且剩餘部分為銅及無法避免之雜質之Cu合金濺鍍靶材而形成保護層。於專利文獻2中,記載有使用包含Ni、進而包含Al及/或Ti且剩餘部分包含Cu之Cu合金形成Cu配線保護層。於專利文獻3中記載有使用包含Ni及Mg且剩餘部分包含Cu之Cu合金而形成Cu配線保護層。
於專利文獻4中,記載有使用包含Zn、Ni及Mn且剩餘部分包含Cu及無法避免之雜質之濺鍍靶材而形成Cu配線之保護層。於專利文獻5中,記載有使用包含Al、Fe、Ni及Mn且剩餘部分包含Cu及無法避
免之雜質之濺鍍靶材而形成Cu配線之保護層。
另一方面,亦提出有使用Mo基合金而形成保護層之方法。例如於專利文獻6中,記載有包含Mo、Ni及W且剩餘部分包含無法避免之雜質之保護層於350℃之大氣中亦具有耐氧化性。
專利文獻1:日本專利特開2013-133489號公報
專利文獻2:日本專利特開2014-105362號公報
專利文獻3:日本專利特開2014-129596號公報
專利文獻4:日本專利特開2014-114481號公報
專利文獻5:日本專利特開2014-156621號公報
專利文獻6:日本專利特開2014-199920號公報
若使用上述專利文獻1至5中所記載之材料,則可於一定程度之溫度範圍內防止銅配線之氧化。然而,可預計今後平板顯示器等之製造製程之溫度將進一步升高,於此種高溫區域例如超過250℃之高溫區域中,即便使用上述各專利文獻所記載之材料,亦難以防止銅配線之氧化。另一方面,若將Mo基合金用於保護層,則於將該保護層與Cu配線總括地蝕刻時,一般而言兩者之蝕刻速度差較大,因此存在於錐形部產生階差等無法獲得所需之圖案形狀之情形。因此,作為保護層,較理想為使用與Cu配線之蝕刻速度差較少之材料。
因此,本發明之問題在於防止銅配線之氧化,更詳細而言,在於提供一種即便於高溫區域亦可有效地防止銅配線之氧化之銅配線保護層形成用之銅基合金濺鍍靶材。
本發明藉由提供包含4質量%以上且16質量%以下之錫、及4質量%以上且11質量%以下之鋁且剩餘部分包含銅及無法避免之雜質的銅
配線保護層形成用之銅基合金濺鍍靶材,從而解決上述問題。
以下,基於較佳之實施形態對本發明進行說明。本發明之濺鍍靶材包含銅基合金。本發明之濺鍍靶材係用以於銅配線上形成保護層者。本發明中,所謂銅配線係指包含銅或銅合金之電路配線,一般而言由藉由各種薄膜形成方法所形成之薄膜層構成。作為構成銅配線之銅合金,可列舉包含選自錳、鎂、鉍、銦等中之1種或2種以上之元素作為合金成分之銅基合金。該等合金成分於銅合金中可以0.01原子%以上且20原子%以下之比率含有。於銅配線包含銅合金之情形時,該銅合金係使用與構成下述保護層之合金不同種者。
本發明之濺鍍靶材包含4質量%以上且16質量%以下之錫、及4質量%以上且11質量%以下之鋁,且剩餘部分包含銅及無法避免之雜質。本發明之濺鍍靶材較佳為除銅及無法避免之雜質以外,僅包含錫及鋁作為構成元素。然而,於不損即本發明之有利效果之範圍內,允許包含少量其他元素。
本發明者進行研究,結果判明,藉由使本發明之濺鍍靶材組合含有錫及鋁,可有效地防止使用該濺鍍靶材而形成之保護層所引起之銅配線之氧化。詳細而言,藉由將濺鍍靶材所含之錫之比率設定為4質量%以上,且將鋁之比率設定為4質量%以上,能夠充分提高起因於保護層之銅配線之耐氧化性。又,藉由將濺鍍靶材所含之錫之比率設定為16質量%以下,且將鋁之比率設定為11質量%以下,於將保護層與銅配線總括地同時蝕刻時,兩者之蝕刻速度差減小,可藉由蝕刻而容易地形成所需之配線圖案。
就使上述本發明之效果更顯著之觀點而言,濺鍍靶材所含之錫
之比率較佳為4質量%以上且10質量%以下,進而較佳為5質量%以上且7質量%以下。另一方面,濺鍍靶材所含之鋁之比率較佳為4質量%以上且10質量%以下,進而較佳為5質量%以上且9質量%以下。進而,濺鍍靶材所含之錫及鋁之合計量之比率較佳為8質量%以上且20質量%以下,進而較佳為10質量%以上且16質量%以下。
就與上述相同之觀點而言,銅基合金中之錫與鋁之比率以質量比表示較佳為Sn/Al之值為0.4以上且2.5以下,進而較佳為0.5以上且1.4以下。
本發明之濺鍍靶材具有如下特徵:使用該靶材所形成之銅配線之保護層之體積電阻率隨著該保護層之退火溫度之上升而降低。因此,於保護層上形成ITO(Indium Tin Oxide,銦錫氧化物)等透明導電膜之情形時,發揮可減小相對於透明導電膜之接觸電阻之有利效果。上述特徵例如可藉由使用本發明之濺鍍靶材而於基板上直接形成保護層,且測定該保護層之退火前後之體積電阻率而進行評價。詳細而言,首先使用本發明之濺鍍靶材而於玻璃基板上直接形成保護層。繼而,測定將上述保護層退火前之室溫(25℃)下之上述保護層之體積電阻率R1,且測定將上述保護層於350℃下退火後之上述保護層之體積電阻率R2並進行比較評價。本發明之濺鍍靶材具有如下特徵:若使用其形成保護層,則上述體積電阻率R2低於上述體積電阻率R1,即R1>R2。體積電阻率R2較佳為相對於體積電阻率R1成為85%以下,進而較佳為成為80%以下,進一步較佳為成為75%以下。本發明者認為,保護層之體積電阻率隨著該保護層之退火溫度之上升而降低之原因在於,因退火而於銅基合金中析出銅與錫之金屬間化合物,由此,純銅成分相對增加。再者,該體積電阻率之降低更佳為隨著退火溫度之上升而逐漸連續。退火係藉由於大氣環境下,將目標之退火溫度保持例如30分鐘而進行。退火係藉由例如自室溫起使溫度緩慢上升而進行。
作為用以測定體積電阻率之玻璃基板,例如可使用EAGLE XG(Corning公司/液晶顯示器用玻璃,註冊商標)等。
本發明之濺鍍靶材可利用該技術領域中公知之各種方法而製造。例如於真空中鑄造熔融之銅、錫及鋁而合金化。其次,使用所獲得之鑄塊來製造濺鍍靶材。對濺鍍靶材進行加工之加工方法並無特別限制,例如可為熱鍛造,可為冷鍛造,或者亦可為熱軋。又,亦可藉由線切割進行切割加工而形成為板材。可藉由使用銦等接合材將所獲得之板材貼合於作為濺鍍之治具之背襯板,而獲得銅基合金濺鍍靶材。再者,於本發明中,所謂銅基合金濺鍍靶材,亦包含平面研磨或接合等濺鍍靶材精加工步驟前之濺鍍靶材之狀態。
其次,對使用本發明之濺鍍靶材而形成銅配線之保護層之方法進行說明。首先,使用作為配線材之銅或銅基合金藉由各種薄膜形成方法於基板上成膜銅配線。作為薄膜形成方法,例如可列舉濺鍍,但並不限於此。作為基板,例如可使用玻璃基板等包含非導電性材料之基板。或者亦可於表面形成有ITO等透明導電膜之玻璃基板上之該透明導電膜上形成配線材。銅配線之厚度能夠根據其具體用途而任意設定,例如可設定為50nm以上且500nm以下。為了提高基板與銅配線之密接性,亦可於兩者間形成密接層。作為密接層,例如於基板為玻璃基板之情形時,可使用包含鈦之層。
於以此方式形成之銅配線上形成保護層。保護層之形成係使用本發明之濺鍍靶材且藉由濺鍍而進行。所形成之保護層包含與濺鍍靶材實質上為相同組成之銅基合金。保護層之厚度能夠根據具體用途而任意設定,例如可設定為20nm以上且60nm以下。藉由將保護層之厚度設定為20nm以上,可有效地防止作為保護對象之銅配線之氧化。又,藉由將保護層之厚度設定為60nm以下,可不使保護層之生產性受損。
以下,藉由實施例更詳細地說明本發明。然而,本發明之範圍並不受該實施例之限制。只要未特別說明,則「%」意指「質量%」。
首先,為了研究使用本發明之濺鍍靶材而形成之保護層對銅配線之耐氧化效果,進行以下評價。
[實施例1至9]
以具有以下表1所示之組成之方式精準稱量銅、錫及鋁之各鑄錠。將該等鑄錠置於氧化鎂製之坩堝,且於真空中進行加熱而使之熔融。使用所獲得之熔液進行鑄造獲得包含銅基合金之鑄塊。軋壓所獲得之鑄塊後,進行加工而獲得直徑101.6mm且厚度5mm之靶材。再者,表1中,例如「Cu-4Sn-4Al」意指銅基合金所含之Sn之比率為4質量%,且Al之比率為4質量%。
於DC(Direct Current,直流)磁控濺鍍裝置安裝玻璃基板,並且安裝鈦、銅及上述所獲得之銅基合金之各濺鍍靶材。於該狀態下進行濺鍍,於上述玻璃基板上依序形成包含鈦之厚度15nm之密接層、厚度400nm之銅配線、及厚度50nm之保護層,製作於玻璃基板上具有3層之配線基板。濺鍍條件如下所述。
‧濺鍍方式:DC磁控濺鍍
‧排氣裝置:旋轉泵+低溫泵
‧到達真空度:2×10-5Pa以下
‧Ar壓力:0.5Pa
‧基板溫度:室溫
‧濺鍍功率:250W(功率密度3.2W/cm2)
‧使用基板:EAGLE XG(Corning公司/液晶顯示器用玻璃,註冊商標)50mm×50mm×0.7mmt
[比較例1至6]
使用包含具有以下表1所示之組成之銅基合金之靶材代替實施例1至9中使用之靶材。除此以外,以與實施例1至9相同之方式形成保護層。
[比較例7]
本比較例係未於實施例1至9中形成保護層之例。因此,於本比較例中,成為露出銅配線之狀態。
[評價1]
對於實施例及比較例中所獲得之具有上述3層之配線基板,研究退火溫度與體積電阻率之關係、及退火溫度與表面反射率之關係。具體而言,於大氣環境下,對上述配線基板進行加熱而使溫度上升,於350℃下將該溫度保持30分鐘,並測定該溫度下之上述配線基板之表面側起之體積電阻率及表面反射率。而且,以25℃(即退火前)下之體積電阻率及表面反射率作為基準,算出該溫度下之體積電阻率及表面反射率之比率(%)(退火後之值/退火前之值×100)。將退火溫度為350℃時之結果示於以下之表1。
體積電阻率係藉由使用低電阻率計(Loresta HP/MITSUBISHI CHEMICAL ANALYTECH股份有限公司製造)及四探針並將該探針壓抵於上述配線基板最表面之保護膜層而測定。又,表面反射率係使用紫外可見分光光度計而測定波長550nm下之值。
根據表1所示之結果明確,於實施例中所獲得之配線基板中,即便於350℃之高溫下進行退火之情形時,包含低電阻之銅配線部分之3層整體之體積電阻率之上升及表面反射率之減小亦較小,判斷最表層之保護層之形成所引起之耐氧化效果較高。相對於此,於各比較例之配線基板中,若於350℃之高溫下進行退火,則體積電阻率之上升及表面反射率之減少變明顯,判斷銅配線被氧化。
其次,為了研究伴隨保護層之退火溫度上升之體積電阻率之變化,進行以下評價。
[實施例10至18]
使用具有實施例1至9之組成之靶材而於玻璃基板上直接形成保護層。濺鍍條件與實施例1至9相同,保護層之厚度係設為400nm。玻璃基板係使用EAGLE XG(Corning公司/液晶顯示器用玻璃,註冊商
標)。
[比較例8至13]
使用具有比較例1至6之組成之靶材代替實施例10至18中使用之靶材。除此以外,以與實施例10至18相同之方式於玻璃基板上直接形成保護層。
[評價2]
對於實施例及比較例中所獲得之附保護層之基板,以與上述評價1相同之順序研究退火溫度與體積電阻率之關係。將退火溫度為350℃時之結果示於以下之表2。
根據表2所示之結果明確,關於實施例10至18中所獲得之附保護層之基板,判斷與退火前相比,退火溫度為350℃時,體積電阻率降低。相對於此,關於比較例11至13之附保護層之基板,與退火前相比,退火溫度為350℃時體積電阻率亦未觀察到較大之變化。又,關
於比較例8至10之附保護層之基板,於退火溫度為350℃時,觀察到體積電阻率略微降低。然而,如根據比較例1至3之結果所判斷,未充分獲得對銅配線之耐氧化效果。
根據本發明,可提供即便於高溫區域中亦可有效地防止銅配線之氧化之銅基合金濺鍍靶材。
Claims (7)
- 一種銅配線保護層形成用之銅基合金濺鍍靶材,其包含4質量%以上且16質量%以下之錫、及4質量%以上且11質量%以下之鋁,且剩餘部分包含銅及無法避免之雜質。
- 如請求項1之銅基合金濺鍍靶材,其中將使用上述銅基合金濺鍍靶材而直接形成於玻璃基板上之保護層之退火前之於室溫(25℃)下之體積電阻率設為R1,將於大氣環境下以350℃將上述保護層退火30分鐘後之體積電阻率設為R2時,R1>R2。
- 如請求項2之銅基合金濺鍍靶材,其中上述體積電阻率R2為上述體積電阻率R1之85%以下。
- 如請求項1之銅基合金濺鍍靶材,其中錫及鋁之合計量之比率為8質量%以上且20質量%以下。
- 如請求項1之銅基合金濺鍍靶材,其中Sn/Al之質量比為0.4以上且2.5以下。
- 如請求項1之銅基合金濺鍍靶材,其除銅及無法避免之雜質以外,僅包含錫及鋁作為構成元素。
- 一種銅配線保護膜,其包含4質量%以上且16質量%以下之錫、及4質量%以上且11質量%以下之鋁,且剩餘部分包含銅及無法避免之雜質。
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