US20150136595A1 - Sputtering target for forming wiring film of flat panel display - Google Patents

Sputtering target for forming wiring film of flat panel display Download PDF

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Publication number
US20150136595A1
US20150136595A1 US14/610,160 US201514610160A US2015136595A1 US 20150136595 A1 US20150136595 A1 US 20150136595A1 US 201514610160 A US201514610160 A US 201514610160A US 2015136595 A1 US2015136595 A1 US 2015136595A1
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Prior art keywords
balance
atom
copper alloy
wiring
target
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US14/610,160
Inventor
Kazunari Maki
Kenichi Yaguchi
Yosuke Nakasato
Haruhiko Asao
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to US14/610,160 priority Critical patent/US20150136595A1/en
Publication of US20150136595A1 publication Critical patent/US20150136595A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/05—Alloys based on copper with manganese as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils

Definitions

  • the present invention relates to a sputtering target capable of farming a wiring film of a flat panel display having a uniform specific electrical resistance over the whole surface thereof, and a wiring film of a flat panel display that is formed using the target.
  • a copper alloy wiring film is used as a wiring film of a flat panel display such as a liquid crystal display, a plasma display, an organic EL display, and an inorganic EL display, and for example, a liquid crystal display device is known in which a copper alloy wiring film containing 1 to 5 atom % of Mg, and Cu and inevitable impurities as the balance is formed (see Patent Document 1).
  • a copper alloy wiring film which contains either one of 1 atom % or less of Al, 0.5 atom % or less of Si, 2 atom % or less of Be, 2 atom % or less of Cr, 2 atom % or less of Mg, 0.5 atom % or less of Sn, 4 atom % or less of Zn, and 2 atom % or less of Ce, as an addition element, is known to have excellent migration resistance. It is also known that the copper alloy wiring film is formed by sputtering using a target containing the same components as the copper alloy wiring film (see Patent Document 2).
  • the copper alloy wiring film in the flat panel display is formed on a glass substrate by sputtering, and then the film is subjected to a heat treatment.
  • the addition element included in the copper alloy wiring film becomes an oxide and is moved to a front surface and a rear surface of the copper alloy wiring film.
  • oxide layers of the addition element are formed in the front surface and the rear surface of the copper alloy wiring film.
  • the formed oxide layer of the addition element prevents Si or the like, which is a basic component of the glass substrate, from diffusing and penetrating into the copper alloy wiring film; and thereby, an increase in the resistivity of the copper alloy wiring film is inhibited.
  • the formed oxide layer of the addition element improves the adhesion property of the copper alloy wiring film relative to the glass substrate.
  • Patent Document 1 Japanese Unexamined Patent Application, First Publication No. H09-43628
  • Patent Document 2 Japanese Unexamined Patent Application, First Publication No. H06-97164
  • the copper alloy wiring film is formed on a wide glass substrate surface by the sputtering.
  • the resistivity value specific electrical resistance
  • the copper alloy wiring film formed on the wide glass substrate surface by the sputtering the resistivity value (specific electrical resistance) varies from area to area, and this tendency remarkably occurs in the copper alloy wiring film formed by using a Mg-containing copper alloy target.
  • the inventors developed a target formed of Mg-containing copper alloy capable of forming a copper alloy wiring film in which a variation in the resistivity value from area to area is small, and the inventors carried out research in order to obtain the copper alloy wiring film in the flat panel display by using the target.
  • a copper alloy thin film which is obtained by sputtering using a copper alloy target including: pure copper (especially, oxygen-free copper having a purity of 99.99% or more); Mg: 0.1 to 5 atom %; and either one or both of Mn and Al: 0.1 to 11 atom% in total, has a smaller variation in the resistivity value and more uniform resistivity value as a whole than those of a copper alloy thin film of the related art which is obtained by sputtering using a copper alloy target including Mg: 1 to 5 atom %, and Cu and inevitable impurities as the balance.
  • the present invention was made based on the above-mentioned research results and has the following features.
  • a sputtering target for forming a wiring of a flat panel display that has a composition including: Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance.
  • a wiring film of a flat panel display consisting of a copper alloy thin film which is obtained by sputtering using the sputtering target described in the first embodiment, and has a composition including: Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance.
  • the copper alloy thin film which configures the wiring of the flat panel display is manufactured by sputtering using the target.
  • the target is manufactured by, for example, the following manner. At first, oxygen-free copper having a purity of 99.99% or more is melted in a high-purity graphite crucible by induction heating under an inert gas atmosphere. Then, Mg at an amount in a range of 0.1 to 5 atom %, and either one or both of Mn and Al at a total amount in a range of 0.1 to 11 atom % are added to the molten copper. The obtained molten metal is casted and solidified under an inert gas atmosphere. The cast is subjected to hot rolling and stress relief annealing.
  • the copper alloy thin film for the flat panel display can be formed by jointing the obtained target to a backing plate and performing sputtering under normal conditions.
  • the reasons for limiting the amount of Mg to be in a range of 0.1 to 5 atom % and limiting the total amount of either one or both of Mn and Al to be in a range of 0.1 to 11 atom % which are contained in a target are as follows. In the case where a copper alloy thin film is formed by sputtering using a target which contains Mg: 0.1 to 5 atom % together with either one or both of Mn and Al: 0.1 to 11 atom % in total, a variation in the resistivity value from area to area becomes small.
  • the amount of Mg is in a range of less than 0.1 atom % or the total amount of either one or both of Mn and Al is in a range of less than 0.1 atom %, the desired effects are not attained; and therefore, this case is not preferable.
  • the amount of Mg is in a range of more than 5 atom % or the total amount of either one or both of Mn and Al is in a range of more than 11 atom %, a further improvement in desired characteristics is not recognized, and, in addition, a resistance of the formed copper alloy thin film increases; and therefore, this case is not preferable.
  • Mg makes grains fine, and Mg suppresses the generation of thermal defects such as hillocks and voids in a copper alloy thin film which configures a wiring film in a flat panel display. As a result, migration resistance is improved.
  • Mg forms a Mg oxide layer on a front surface and a rear surface of the copper alloy thin film during a heat treatment to prevent Si or the like, which is a main component of a glass substrate, from dispersing and penetrating into the copper alloy wiring film. As a result, an increase in the resistivity value of the copper alloy wiring film is prevented, and the adhesion property of the copper alloy wiring film to the glass substrate is also improved.
  • the amount of Mg is in a range of less than 0.1 atom %, desired effects are not attained; and therefore, this case is not preferable.
  • the amount of Mg is in a range of more than 5 atom %, an improvement in the property is not recognized, and in addition, the resistivity value is increased; and thereby, a suitable function as the wiring film is not exhibited. Therefore, this case is not preferable.
  • the amount of Mg contained in the copper alloy thin film is set to be in a range of 0.1 to 5 atom %.
  • a multiple oxide or an oxide solid solution which includes Mg with Mn and/or Al is formed in the front surface and the rear surface of the copper alloy thin film; and thereby, the adhesion property to the surface of the glass substrate is further improved. Furthermore, since an oxide which is formed in the front surface and the rear surface of the copper alloy thin film contains the multiple oxide or the oxide solid solution which includes Mg with Mn and/or Al having high chemical stability, the chemical stability of the copper alloy wiring is improved. In the case where either one or both of these components are added at a total amount in a range of less than 0.1 atom %, the effect of improving the adhesion property cannot be obtained; and therefore, this case is not preferable. In the case where Mn and Al are added at an amount in a range of more than 11 atom % in total, an improvement in the property is not recognized, and in addition, the resistivity value of the wiring film increases; and therefore, this case is not preferable.
  • a small amount of P facilitates the casting property of a copper alloy without deteriorating the properties such as the resistivity, the hillocks, the voids and the adhesion property required for the copper alloy thin film; and therefore, P is added as necessary.
  • P is added at an amount in a range of less than 0.001 atom %, there is no effect thereof.
  • the amount of P is set to be in a range of 0.001 to 0.1 atom %.
  • Oxygen-free copper having a purity of 99.99 mass % was prepared, and the oxygen-free copper was melted in a high-purity graphite crucible by induction heating under an Ar gas atmosphere. Mg, Mn and Al were added to the obtained molten copper, and P was added as necessary. These metals were melted, and the composition thereof was adjusted so as to obtain molten metals having the component compositions shown in Table 1. The obtained molten metals were casted by a cooled carbon mold. The casts were subjected to hot rolling and stress relief annealing.
  • the surfaces of the obtained rolled products were processed by a lathe to produce copper alloy sputtering targets of the present invention (hereinafter, referred to as targets of the present invention) 1 to 25, comparison copper alloy sputtering targets (hereinafter, referred to as comparison targets) 1 to 4, and a sputtering target of the related art (hereinafter, referred to as a target of the related art) 1 which had a circular plate shape and a size of an outer diameter: 200mm ⁇ a thickness: 10 mm and the component compositions shown in Table 1.
  • Backing plates formed of oxygen-free copper were prepared, and each of the targets of the present invention 1 to 25, the comparison targets 1 to 4, and the target of the related art 1 was overlapped with the backing plate formed of oxygen-free copper, and was soldered by indium at 200° C.; and thereby, each of the targets of the present invention 1 to 25, the comparison targets 1 to 4, and the target of the related art 1 was jointed to the backing plate formed of oxygen-free copper to produce the backing plate target.
  • the backing plate target obtained by soldering each of the targets of the present invention 1 to 25, the comparison targets 1 to 4, and the target of the related art 1 to the backing plate formed of oxygen-free copper was disposed such that a distance between the target and a glass substrate (a glass substrate 1737 produced by Corning Company having sizes of diameter: 200 mm and thickness: 0.7 mm) became 70 mm.
  • Copper alloy wiring thin films of the present invention (hereinafter, referred to as wiring thin films of the present invention) 1 to 25, comparison copper alloy wiring thin films (hereinafter, referred to comparison wiring thin films) 1 to 4, and a copper alloy wiring thin film of the related art (hereinafter, referred to as a wiring thin film of the related art) 1 were formed on surfaces of the glass substrates under the following conditions:
  • atmosphere gas composition a mixture gas of Ar: 90 volume % and oxygen: 10 volume %;
  • a glass substrate heating temperature 150° C.
  • the copper alloy wiring thin films had a circular shape, a diameter of 100 mm, a thickness of 300nm, and component compositions shown in Tables 2 and 3.
  • the obtained wiring thin films of the present invention 1 to 25, the comparison wiring thin films 1 to 4 and the wiring thin film of the related art 1 were charged in a heating furnace, respectively, and were subjected to a heat treatment in an Ar atmosphere under conditions where the temperature rising rate was 5° C./min, the maximum temperature was 350° C., and the holding time was 30 minutes.
  • the obtained circular comparison wiring thin films 1 to 4 and the obtained circular wiring thin film of the related art 1 the resistivities were measured by a four probe method at the center, at a point distant from the center by 50 mm and at a point distant from the center by 100 mm, and the difference between the maximum value and the minimum value was obtained.
  • the results are shown in Tables 2 and 3, and the variation in the resistivity value of the wiring thin film was evaluated.
  • a cross-cut adhesion test was performed in accordance with JIS-K5400 as follows. Equally spaced cut lines were made at 1 mm intervals in a grid arrangement in each of the wiring thin films of the present invention 1 to 25, the comparison wiring thin films 1 to 4 and the wiring thin film of the related art 1. Then, a scotch tape manufactured by 3M Company was put on the surface of the wiring thin film and was peeled off. Thereafter, an area ratio (area%) of the wiring thin film remained to adhere to the glass substrate within a 10-mm-square in a center portion of the glass substrate was measured. The results are shown in Tables 2 and 3, and the adhesion properties to the glass substrate, of the wiring thin film of the present invention 1 to 25, the comparison wiring thin films 1 to 4 and the wiring thin film of the related art 1, were evaluated.

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Abstract

A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.

Description

    TECHNICAL FIELD
  • The present invention relates to a sputtering target capable of farming a wiring film of a flat panel display having a uniform specific electrical resistance over the whole surface thereof, and a wiring film of a flat panel display that is formed using the target.
  • The present application claims priority on Japanese Patent Application No. 2008-199559 filed on Aug. 1, 2008 and Japanese Patent Application No. 2009-157493 filed on Jul. 2, 2009, the contents of which are incorporated herein by reference.
    • BACKGROUND ART
  • A copper alloy wiring film is used as a wiring film of a flat panel display such as a liquid crystal display, a plasma display, an organic EL display, and an inorganic EL display, and for example, a liquid crystal display device is known in which a copper alloy wiring film containing 1 to 5 atom % of Mg, and Cu and inevitable impurities as the balance is formed (see Patent Document 1).
  • Furthermore, a copper alloy wiring film, which contains either one of 1 atom % or less of Al, 0.5 atom % or less of Si, 2 atom % or less of Be, 2 atom % or less of Cr, 2 atom % or less of Mg, 0.5 atom % or less of Sn, 4 atom % or less of Zn, and 2 atom % or less of Ce, as an addition element, is known to have excellent migration resistance. It is also known that the copper alloy wiring film is formed by sputtering using a target containing the same components as the copper alloy wiring film (see Patent Document 2).
  • The copper alloy wiring film in the flat panel display is formed on a glass substrate by sputtering, and then the film is subjected to a heat treatment. When the heat treatment is performed, the addition element included in the copper alloy wiring film becomes an oxide and is moved to a front surface and a rear surface of the copper alloy wiring film. Thereby, oxide layers of the addition element are formed in the front surface and the rear surface of the copper alloy wiring film. The formed oxide layer of the addition element prevents Si or the like, which is a basic component of the glass substrate, from diffusing and penetrating into the copper alloy wiring film; and thereby, an increase in the resistivity of the copper alloy wiring film is inhibited. In addition, the formed oxide layer of the addition element improves the adhesion property of the copper alloy wiring film relative to the glass substrate.
    • PRIOR ART DOCUMENTS Patent Documents
  • Patent Document 1: Japanese Unexamined Patent Application, First Publication No. H09-43628
  • Patent Document 2: Japanese Unexamined Patent Application, First Publication No. H06-97164
    • DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
  • Recently, flat panel displays have become increasingly larger, and large liquid crystal panels having sizes of 50 inches or more have come to be mass produced. For this reason, the copper alloy wiring film is formed on a wide glass substrate surface by the sputtering. However, in the copper alloy wiring film formed on the wide glass substrate surface by the sputtering, the resistivity value (specific electrical resistance) varies from area to area, and this tendency remarkably occurs in the copper alloy wiring film formed by using a Mg-containing copper alloy target.
    • Means for Solving the Problems
  • Thus, the inventors developed a target formed of Mg-containing copper alloy capable of forming a copper alloy wiring film in which a variation in the resistivity value from area to area is small, and the inventors carried out research in order to obtain the copper alloy wiring film in the flat panel display by using the target. As a result, the inventors have found that a copper alloy thin film, which is obtained by sputtering using a copper alloy target including: pure copper (especially, oxygen-free copper having a purity of 99.99% or more); Mg: 0.1 to 5 atom %; and either one or both of Mn and Al: 0.1 to 11 atom% in total, has a smaller variation in the resistivity value and more uniform resistivity value as a whole than those of a copper alloy thin film of the related art which is obtained by sputtering using a copper alloy target including Mg: 1 to 5 atom %, and Cu and inevitable impurities as the balance.
  • The present invention was made based on the above-mentioned research results and has the following features.
  • According to a first embodiment, there is provided a sputtering target for forming a wiring of a flat panel display that has a composition including: Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance.
  • According to another embodiment, there is provided a wiring film of a flat panel display consisting of a copper alloy thin film which is obtained by sputtering using the sputtering target described in the first embodiment, and has a composition including: Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance.
  • The copper alloy thin film which configures the wiring of the flat panel display is manufactured by sputtering using the target. The target is manufactured by, for example, the following manner. At first, oxygen-free copper having a purity of 99.99% or more is melted in a high-purity graphite crucible by induction heating under an inert gas atmosphere. Then, Mg at an amount in a range of 0.1 to 5 atom %, and either one or both of Mn and Al at a total amount in a range of 0.1 to 11 atom % are added to the molten copper. The obtained molten metal is casted and solidified under an inert gas atmosphere. The cast is subjected to hot rolling and stress relief annealing. The copper alloy thin film for the flat panel display can be formed by jointing the obtained target to a backing plate and performing sputtering under normal conditions.
  • The reasons for limiting the ranges of the component compositions of the sputtering target of the present invention and the copper alloy thin film formed using the target as mentioned above will be described.
  • (a) Component Composition of Target
  • The reasons for limiting the amount of Mg to be in a range of 0.1 to 5 atom % and limiting the total amount of either one or both of Mn and Al to be in a range of 0.1 to 11 atom % which are contained in a target are as follows. In the case where a copper alloy thin film is formed by sputtering using a target which contains Mg: 0.1 to 5 atom % together with either one or both of Mn and Al: 0.1 to 11 atom % in total, a variation in the resistivity value from area to area becomes small. In the case where the amount of Mg is in a range of less than 0.1 atom % or the total amount of either one or both of Mn and Al is in a range of less than 0.1 atom %, the desired effects are not attained; and therefore, this case is not preferable. In the case where the amount of Mg is in a range of more than 5 atom % or the total amount of either one or both of Mn and Al is in a range of more than 11 atom %, a further improvement in desired characteristics is not recognized, and, in addition, a resistance of the formed copper alloy thin film increases; and therefore, this case is not preferable.
  • (b) Component Composition of Copper Alloy Thin Film
  • Mg:
  • Mg makes grains fine, and Mg suppresses the generation of thermal defects such as hillocks and voids in a copper alloy thin film which configures a wiring film in a flat panel display. As a result, migration resistance is improved. In addition, Mg forms a Mg oxide layer on a front surface and a rear surface of the copper alloy thin film during a heat treatment to prevent Si or the like, which is a main component of a glass substrate, from dispersing and penetrating into the copper alloy wiring film. As a result, an increase in the resistivity value of the copper alloy wiring film is prevented, and the adhesion property of the copper alloy wiring film to the glass substrate is also improved. In the case where the amount of Mg is in a range of less than 0.1 atom %, desired effects are not attained; and therefore, this case is not preferable. In the case where the amount of Mg is in a range of more than 5 atom %, an improvement in the property is not recognized, and in addition, the resistivity value is increased; and thereby, a suitable function as the wiring film is not exhibited. Therefore, this case is not preferable. Thus, the amount of Mg contained in the copper alloy thin film is set to be in a range of 0.1 to 5 atom %.
  • Mn and Al:
  • By containing these components along with Mg, a multiple oxide or an oxide solid solution which includes Mg with Mn and/or Al is formed in the front surface and the rear surface of the copper alloy thin film; and thereby, the adhesion property to the surface of the glass substrate is further improved. Furthermore, since an oxide which is formed in the front surface and the rear surface of the copper alloy thin film contains the multiple oxide or the oxide solid solution which includes Mg with Mn and/or Al having high chemical stability, the chemical stability of the copper alloy wiring is improved. In the case where either one or both of these components are added at a total amount in a range of less than 0.1 atom %, the effect of improving the adhesion property cannot be obtained; and therefore, this case is not preferable. In the case where Mn and Al are added at an amount in a range of more than 11 atom % in total, an improvement in the property is not recognized, and in addition, the resistivity value of the wiring film increases; and therefore, this case is not preferable.
  • P:
  • A small amount of P facilitates the casting property of a copper alloy without deteriorating the properties such as the resistivity, the hillocks, the voids and the adhesion property required for the copper alloy thin film; and therefore, P is added as necessary. However, in the case where P is added at an amount in a range of less than 0.001 atom %, there is no effect thereof. In the case where P is added at an amount in a range of more than 0.1 atom %, there is no improvement in the casting property. Thus, the amount of P is set to be in a range of 0.001 to 0.1 atom %.
    • Effects of the Invention
  • In the case where a copper alloy thin film is formed by sputtering using the target of the present invention, even if a glass substrate becomes larger, a variation in the resistivity value from area to area in the formed copper alloy thin film is small. In addition, the adhesion property to the glass substrate surface is improved, and the resistivity value is low. Therefore, it is possible to form a copper alloy wiring film of a high-definition and large flat panel display.
    • BEST MODE FOR CARRYING OUT THE INVENTION
  • Oxygen-free copper having a purity of 99.99 mass % was prepared, and the oxygen-free copper was melted in a high-purity graphite crucible by induction heating under an Ar gas atmosphere. Mg, Mn and Al were added to the obtained molten copper, and P was added as necessary. These metals were melted, and the composition thereof was adjusted so as to obtain molten metals having the component compositions shown in Table 1. The obtained molten metals were casted by a cooled carbon mold. The casts were subjected to hot rolling and stress relief annealing. The surfaces of the obtained rolled products were processed by a lathe to produce copper alloy sputtering targets of the present invention (hereinafter, referred to as targets of the present invention) 1 to 25, comparison copper alloy sputtering targets (hereinafter, referred to as comparison targets) 1 to 4, and a sputtering target of the related art (hereinafter, referred to as a target of the related art) 1 which had a circular plate shape and a size of an outer diameter: 200mm×a thickness: 10 mm and the component compositions shown in Table 1.
  • Backing plates formed of oxygen-free copper were prepared, and each of the targets of the present invention 1 to 25, the comparison targets 1 to 4, and the target of the related art 1 was overlapped with the backing plate formed of oxygen-free copper, and was soldered by indium at 200° C.; and thereby, each of the targets of the present invention 1 to 25, the comparison targets 1 to 4, and the target of the related art 1 was jointed to the backing plate formed of oxygen-free copper to produce the backing plate target.
  • The backing plate target obtained by soldering each of the targets of the present invention 1 to 25, the comparison targets 1 to 4, and the target of the related art 1 to the backing plate formed of oxygen-free copper was disposed such that a distance between the target and a glass substrate (a glass substrate 1737 produced by Corning Company having sizes of diameter: 200 mm and thickness: 0.7 mm) became 70 mm.
  • Copper alloy wiring thin films of the present invention (hereinafter, referred to as wiring thin films of the present invention) 1 to 25, comparison copper alloy wiring thin films (hereinafter, referred to comparison wiring thin films) 1 to 4, and a copper alloy wiring thin film of the related art (hereinafter, referred to as a wiring thin film of the related art) 1 were formed on surfaces of the glass substrates under the following conditions:
  • power supply: direct current;
  • sputter power: 600 W;
  • an attained degree of vacuum: 4×10−5 Pa;
  • atmosphere gas composition: a mixture gas of Ar: 90 volume % and oxygen: 10 volume %;
  • a gas pressure: 0.2Pa; and
  • a glass substrate heating temperature: 150° C.
  • The copper alloy wiring thin films had a circular shape, a diameter of 100 mm, a thickness of 300nm, and component compositions shown in Tables 2 and 3. The obtained wiring thin films of the present invention 1 to 25, the comparison wiring thin films 1 to 4 and the wiring thin film of the related art 1 were charged in a heating furnace, respectively, and were subjected to a heat treatment in an Ar atmosphere under conditions where the temperature rising rate was 5° C./min, the maximum temperature was 350° C., and the holding time was 30 minutes. With regard to each of the obtained circular wiring thin films of the present invention 1 to 25, the obtained circular comparison wiring thin films 1 to 4 and the obtained circular wiring thin film of the related art 1, the resistivities were measured by a four probe method at the center, at a point distant from the center by 50 mm and at a point distant from the center by 100 mm, and the difference between the maximum value and the minimum value was obtained. The results are shown in Tables 2 and 3, and the variation in the resistivity value of the wiring thin film was evaluated.
  • In addition, a cross-cut adhesion test was performed in accordance with JIS-K5400 as follows. Equally spaced cut lines were made at 1 mm intervals in a grid arrangement in each of the wiring thin films of the present invention 1 to 25, the comparison wiring thin films 1 to 4 and the wiring thin film of the related art 1. Then, a scotch tape manufactured by 3M Company was put on the surface of the wiring thin film and was peeled off. Thereafter, an area ratio (area%) of the wiring thin film remained to adhere to the glass substrate within a 10-mm-square in a center portion of the glass substrate was measured. The results are shown in Tables 2 and 3, and the adhesion properties to the glass substrate, of the wiring thin film of the present invention 1 to 25, the comparison wiring thin films 1 to 4 and the wiring thin film of the related art 1, were evaluated.
  • With regard to the wiring thin films of the present invention 1 to 25, the comparison wiring thin films 1 to 4 and the wiring thin film of the related art 1 which had been subjected to the heat treatment, five portions in each surface thereof were observed by a SEM at a magnification of 5,000, and it was observed whether or not hillocks and voids were generated. The results are shown in Tables 2 and 3.
  • TABLE 1
    Component composition (atom %)
    Cu and
    inevitable
    Target Mg Mn Al P impurities
    Present 1 0.1 9.8 — — balance
    invention 2 0.5 1.0 — — balance
    3 0.9 7.3 — — balance
    4 1.4 3.0 — — balance
    5 1.8 4.3 — — balance
    6 2.6 5.0 — — balance
    7 3.0 3.3 — — balance
    8 4.2 0.1 — — balance
    9 4.9 1.9 — — balance
    10 0.1 — 3.0 — balance
    11 0.5 — 9.9 — balance
    12 1.0 — 2.2 — balance
    13 1.4 — 6.2 — balance
    14 2.0 — 4.3 — balance
    15 2.6 — 5.3 — balance
    16 2.7 — 0.1 — balance
    17 0.5 0.2 0.8 — balance
    18 5.0 0.5 1.6 — balance
    19 2.0 2.1 2.1 — balance
    20 3.9 2.1 6.4 — balance
    21 0.5 0.2 0.9 0.001 balance
    22 5.0 0.5 1.5 0.05 balance
    23 3.9 2.1 6.0 0.1 balance
    24 2.1 — 8.3 — balance
    25 4.0 — 11.0 — balance
    Comparison 1 0.05* 0.05* — — balance
    2 0.05* — 0.05* — balance
    3 5.7* 11.0* 0.05* — balance
    4 5.7* 5.0* 10.5* — balance
    Relate art 1 3.5 —* —* — balance
    *signs show values out of the ranges of the present invention.
  • TABLE 2
    Cross-cut
    Measured resistivity values adhesion test
    of wiring thin film (μ Ωcm) Ratio of
    Component composition of Difference Presence wiring thin
    wiring thin film (atom %) 50 100 between of film adhered
    Cu and mm mm maximum hillocks to glass
    Wiring thin Used target inevitable from from and and substrate
    film of Table 1 Mg Mn Al P impurities Center center center minimum voids (area %)
    Present 1 Present 1 0.1 7.5 — — balance 12.6 12.5 12.7 0.2 none 100
    invention 2 invention 2 0.4 0.9 — — balance 3.1 3.1 3.2 0.1 none 100
    3 3 0.8 6.0 — — balance 10.9 10.8 10.8 0.1 none 100
    4 4 1.1 2.3 — — balance 5.4 5.4 5.4 0.0 none 100
    5 5 1.4 3.7 — — balance 7.8 7.8 7.5 0.3 none 100
    6 6 2.1 4.3 — — balance 8.5 8.7 8.8 0.3 none 100
    7 7 2.5 2.9 — — balance 6.8 6.7 6.8 0.1 none 100
    8 8 3.6 0.1 — — balance 3.0 2.9 3.1 0.2 none 100
    9 9 3.9 1.6 — — balance 5.3 5.3 5.1 0.2 none 100
    10 10 0.1 — 2.3 — balance 3.1 3.2 3.1 0.1 none 100
    11 11 0.4 — 7.3 — balance 5.2 5.1 5.3 0.2 none 100
    12 12 0.8 — 1.9 — balance 3.0 3.1 3.0 0.1 none 100
    13 13 1.2 — 4.5 — balance 4.5 4.5 4.4 0.1 none 100
    14 14 1.8 — 3.2 — balance 4.0 4.0 4.1 0.1 none 100
    15 15 2.1 — 3.8 — balance 4.5 4.4 4.4 0.0 none 100
  • TABLE 3
    Cross-cut
    adhesion
    test
    Measured resistivity values Ratio of
    of wiring thin film (μ Ωcm) wiring
    Component composition of Difference Presence thin film
    wiring thin film (atom %) 50 100 between of adhered
    Cu and mm mm maximum hillocks to glass
    Wiring thin Used target of inevitable from from and and substrate
    film Table 1 Mg Mn Al P impurities Center center center minimum voids (area %)
    Present 16 Present 16 2.4 — 0.1 — balance 2.6 2.6 2.6 0.0 none 100
    Invention 17 Invention 17 0.4 0.2 0.6 — balance 2.6 2.6 2.5 0.0 none 100
    18 18 4.2 0.3 1.3 — balance 4.2 4.2 4.2 0.0 none 100
    19 19 1.7 1.7 1.5 — balance 5.7 5.7 5.7 0.0 none 100
    20 20 2.9 1.7 4.8 — balance 7.7 7.5 7.7 0.2 none 100
    21 21 0.4 0.2 0.6 0.001 balance 2.6 2.6 2.6 0.0 none 100
    22 22 3.9 0.4 1.2 0.04 balance 4.3 4.3 4.4 0.1 none 100
    23 23 3.2 1.7 4.6 0.1 balance 8.0 7.7 7.7 0.3 none 100
    24 24 1.9 — 7.5 — balance 5.7 5.8 5.6 0.2 none 100
    25 25 3.2 — 9.1 — balance 6.4 6.5 6.3 0.2 none 100
    Comparison 1 Comparison 1 0.04* 0.04* — — balance 2.0 2.0 2.0 0.0 present 79
    2 2 0.04* — 0.04* — balance 1.9 2.0 2.0 0.1 present 41
    3 3 5.1* 10.1* 0.04* — balance 16.4 16.5 16.9 0.5 none 100
    4 4 5.2* 4.4 9.2 — balance 14.6 14.7 15.0 0.4 none 100
    Related Art 1 Related Art 1 2.9 —* —* — balance 2.7 3.0 .3.7 1.0 none 59
    *signs show values out of the ranges of the present invention.
  • The following can be understood from the results shown in Tables 1 to 3.
  • (i) With regard to the wiring thin film of the related art 1 which was formed by sputtering using the target of the related art 1 solely containing Mg with Cu, a difference in resisitivity between the center portion and the peripheral portion is large, and the adhesion property to the glass substrate is poor. In contrast, with regard to the wiring thin films of the present invention 1 to 25 which contained Mg together with either one or both of Mn and Al, the differences in resistivity between the center portion and the peripheral portion are small; and therefore, the variations in the resistivity value are small. In addition, the adhesion properties to the glass substrate are excellent.
  • (ii) With regard to the comparison wiring thin film 1 which was formed by sputtering using the comparison target 1 containing Mg and Mn at amounts lower than the ranges of the present invention, and the comparison wiring thin film 2 which was formed by sputtering using the comparison target 2 containing Mg and Al at amounts lower than the ranges of the present invention, the adhesion properties are poor. Furthermore, hillocks and voids are generated. Therefore, migration may easily occur, which is not desirable. Moreover, with regard to the comparison wiring thin films 3 and 4 of which the Mg amount and the total amount of Mn and Al are higher than the ranges of the present invention, the resistivities becomes too large; and therefore, these films are not desirable as the wiring thin film.

Claims (5)

1-4. (canceled)
5. A sputtering target for forming a wiring film of a flat panel display having a composition consisting of: Mg: 0.1 to 5 atom %; Al: 0.8 to 11 atom %; and the balance of Cu and inevitable impurities.
6. A sputtering target for forming a wiring film of a flat panel display having a composition consisting of: Mg: 0.1 to 5 atom %; Al: 0.8 to 11 atom %; P: 0.001 to 0.1 atom%; and the balance of Cu and inevitable impurities.
7. A sputtering target for forming a wiring film of a flat panel display having a composition consisting of: Mg: 0.1 to 5 atom %; Al: 0.8 to 11 atom %; Mn; and the balance of Cu and inevitable impurities.
wherein a total content of Mn and Al is in a range of more than 0.8 to 11 atom %.
8. A sputtering target for forming a wiring film of a flat panel display having a composition consisting of: Mg: 0.1 to 5 atom%; Al: 0.8 to 11 atom %; P: 0.001 to 0.1 atom%; Mn; and the balance of Cu and inevitable impurities.
wherein a total content of Mn and Al is in a range of more than 0.8 to 11 atom %.
US14/610,160 2008-08-01 2015-01-30 Sputtering target for forming wiring film of flat panel display Abandoned US20150136595A1 (en)

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Cited By (2)

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Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4970622B2 (en) * 2009-08-26 2012-07-11 株式会社アルバック Semiconductor device, liquid crystal display device having semiconductor device, and method of manufacturing semiconductor device
WO2011024704A1 (en) 2009-08-28 2011-03-03 株式会社アルバック Wiring layer, semiconductor device, liquid crystal display device
US8373832B2 (en) 2009-10-27 2013-02-12 Ulvac, Inc. Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
KR101369693B1 (en) 2010-05-14 2014-03-04 미쓰비시 마테리알 가부시키가이샤 Copper alloy for electronic device, method for producing copper alloy for electronic device, and copper alloy rolled material for electronic device
JP5045784B2 (en) * 2010-05-14 2012-10-10 三菱マテリアル株式会社 Copper alloy for electronic equipment, method for producing copper alloy for electronic equipment, and rolled copper alloy material for electronic equipment
JP5712585B2 (en) * 2010-12-03 2015-05-07 三菱マテリアル株式会社 Copper alloy for electronic equipment, method for producing copper alloy for electronic equipment, and rolled copper alloy material for electronic equipment
JP2012149294A (en) * 2011-01-18 2012-08-09 Hitachi Cable Ltd Sputtering target, semiconductor device, and method for manufacturing the device
KR20140029532A (en) * 2011-09-30 2014-03-10 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Sputtering target and manufacturing method therefor
JP5903832B2 (en) 2011-10-28 2016-04-13 三菱マテリアル株式会社 Copper alloy for electronic equipment, method for producing copper alloy for electronic equipment, rolled copper alloy material for electronic equipment, and electronic equipment parts
JP5903838B2 (en) 2011-11-07 2016-04-13 三菱マテリアル株式会社 Copper alloy for electronic equipment, copper material for electronic equipment, copper alloy manufacturing method for electronic equipment, copper alloy plastic working material for electronic equipment, and electronic equipment parts
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CN104066868B (en) * 2012-01-23 2016-09-28 吉坤日矿日石金属株式会社 High-purity copper-manganese-alloy sputtering target
JP5952653B2 (en) * 2012-06-26 2016-07-13 株式会社コベルコ科研 Target assembly
KR20150053805A (en) 2013-03-07 2015-05-18 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Copper alloy sputtering target
JP5805708B2 (en) * 2013-06-05 2015-11-04 株式会社神戸製鋼所 Wiring film for touch panel sensor and touch panel sensor
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WO2016186070A1 (en) 2015-05-21 2016-11-24 Ｊｘ金属株式会社 Copper alloy sputtering target and method for manufacturing same
WO2017170699A1 (en) 2016-03-30 2017-10-05 三菱マテリアル株式会社 Copper alloy for electronic and electrical equipment, copper alloy plate strip for electronic and electrical equipment, component for electronic and electrical equipment, terminal, busbar, and movable piece for relays
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US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
JP6780187B2 (en) 2018-03-30 2020-11-04 三菱マテリアル株式会社 Copper alloys for electronic / electrical equipment, copper alloy strips for electronic / electrical equipment, parts for electronic / electrical equipment, terminals, and busbars
MX2020009869A (en) 2018-03-30 2020-10-12 Mitsubishi Materials Corp Copper alloy for electronic/electric device, copper alloy sheet/strip material for electronic/electric device, component for electronic/electric device, terminal, and busbar.
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JP7188480B2 (en) * 2021-03-02 2022-12-13 三菱マテリアル株式会社 Hot-rolled copper alloy sheet and sputtering target
JP7188479B2 (en) * 2021-03-02 2022-12-13 三菱マテリアル株式会社 Hot-rolled copper alloy sheet and sputtering target

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760043A (en) * 1980-09-30 1982-04-10 Furukawa Electric Co Ltd:The Electrically conductive copper alloy with corrosion and heat resistance
JP3091026B2 (en) 1992-09-11 2000-09-25 三菱電機株式会社 Integrated circuit wiring
JPH0943628A (en) 1995-08-01 1997-02-14 Toshiba Corp Liquid crystal display device
JP3904118B2 (en) * 1997-02-05 2007-04-11 株式会社神戸製鋼所 Copper alloy for electric and electronic parts and manufacturing method thereof
US6387805B2 (en) * 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
JP2000034562A (en) 1998-07-14 2000-02-02 Japan Energy Corp Sputtering target and part used in apparatus for forming thin film
JP2000239836A (en) * 1999-02-23 2000-09-05 Japan Energy Corp High purity copper or copper alloy sputtering target and its production
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
JP2002075995A (en) * 2000-08-24 2002-03-15 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2004076079A (en) * 2002-08-14 2004-03-11 Tosoh Corp Thin film for wiring and sputtering target
JP2004076080A (en) 2002-08-14 2004-03-11 Tosoh Corp Thin film for wiring and sputtering target
AT7491U1 (en) 2004-07-15 2005-04-25 Plansee Ag MATERIAL FOR CONCRETE ALLOY COPPER ALLOY
JP4266360B2 (en) * 2004-07-26 2009-05-20 株式会社神戸製鋼所 Cu-based wiring forming method for semiconductor device
JP4589835B2 (en) * 2005-07-13 2010-12-01 富士通セミコンダクター株式会社 Semiconductor device manufacturing method and semiconductor device
JP4955008B2 (en) 2006-10-03 2012-06-20 Ｊｘ日鉱日石金属株式会社 Cu-Mn alloy sputtering target and semiconductor wiring

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140227557A1 (en) * 2013-02-14 2014-08-14 Mitsubishi Materials Corporation Sputtering target for forming protective film and laminated wiring film
US9543128B2 (en) * 2013-02-14 2017-01-10 Mitsubishi Materials Corporation Sputtering target for forming protective film and laminated wiring film
US10443113B2 (en) 2013-11-06 2019-10-15 Mitsubishi Materials Corporation Sputtering target for forming protective film and multilayer wiring film

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