CN102203916A - 用于形成薄膜晶体管用布线膜的溅射靶材 - Google Patents
用于形成薄膜晶体管用布线膜的溅射靶材 Download PDFInfo
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Abstract
用于形成薄膜晶体管用布线膜的溅射靶材,具有如下组成:含有Mg:0.1~5原子%、Ca:0.1~10原子%,剩余部分含有Cu和不可避免的杂质。另外还可以含有Mn和Al中的至少一种或两种合计0.1~10原子%。另外还可以含有P:0.001~0.1原子%。
Description
技术领域
本发明涉及用于形成密合性优异的薄膜晶体管(以下称为TFT)的栅电极、源电极和漏电极等的布线膜及布线基底膜(以下称为布线膜)的溅射靶材。
本申请基于2008年10月24日在日本提出申请的日本特愿2008-273938号主张优先权,在此引用其内容。
背景技术
一般地,液晶显示器、有机EL显示器等平板显示器为在玻璃基板上形成有薄膜晶体管(以下称为TFT)的结构,作为所述TFT的栅电极、源电极和漏电极等的布线膜,使用铜合金布线膜。
例如,已知形成有铜合金布线膜的液晶显示装置,该铜合金布线膜含有Mg:1~5原子%、剩余部分包含Cu和不可避免的杂质(参照专利文献1)。
此外,认为由含有相对于金属材料整体大致80原子%以上的Cu、和相对于金属材料整体为0.5~20原子%的Mg、Ti、Al和Cr的金属氧化物形成用金属的铜合金构成是合适的(参照专利文献2)。
该铜合金布线膜是在玻璃基板和涂覆有Si膜的玻璃基板上通过溅射而成膜后,进行热处理而形成的。若进行所述热处理,则铜合金布线膜中包含的添加元素移动至铜合金布线膜的表面和背面,成为氧化物。由此,在铜合金布线膜的表面和背面上形成含有添加元素的氧化物层。
该含有添加元素的氧化物层的生成,阻止玻璃基板和Si膜的基本成分即硅等向铜合金布线膜的扩散浸透,从而防止铜合金布线膜的电阻率增加。此外,认为所述含有添加元素的氧化物层的生成提高铜合金布线膜与玻璃基板和Si膜的密合性。
此外,对于该在玻璃基板上形成的TFT,为了使TFT可靠运转,将TFT的Si膜的悬空键封端而进行氢化处理(以下称为氢退火)(参照非专利文献1)。
近年来,平板显示器愈发大型化,50英寸以上的大型液晶面板现已逐渐量产。因此,现已逐渐通过溅射在大玻璃基板表面上形成铜合金布线膜,但是通过溅射在大玻璃基板表面上形成的铜合金布线膜电阻率值因位置的不同而发生偏差。该倾向在使用含有Mg的铜合金靶材而形成的铜合金布线膜中表现明显。
此外,若为了将Si膜的悬空键封端,对使用栅电极、源电极和漏电极等的铜合金布线膜制作的TFT进行氢退火,则利用上述热处理形成的铜合金布线膜的表面和背面的氧化物层被还原。结果发生这样的问题:氧化物层实现的密合性、防止Si向铜合金布线膜扩散的特性降低,尤其是密合性显著降低。
现有技术文献
专利文献
专利文献1: 日本特开平9-43628号公报
专利文献2: 日本特开2005-166757号公报
非专利文献
非专利文献1 : 2003FPDテクノロジー大全(2003FPD Technology Outlook)P155~165。
发明内容
发明要解决的课题
本发明的目的在于提供可形成电阻率值的偏差少、整体具有均一的电阻率值,而且具有优异的密合性的铜合金布线膜的溅射靶材。
解决课题的手段
本发明人为得到具有以下特征的铜合金布线膜进行了研究。
(i)电阻率值的偏差少、整体具有均一的电阻率值。
(ii)即使进行氢退火,在铜合金布线膜表面和背面形成的氧化物层也难以还原,从而氧化物层实现的密合性下降少。
结果发现,使用具有下述组成的铜合金靶材进行溅射是重要的:含有Mg:0.1~5原子%、Ca:0.1~10原子%,进而根据需要,含有Mn和Al中的至少一种或两种合计:0.1~10原子%,进而根据需要,含有P:0.001~0.1原子%,剩余部分包含Cu和不可避免的杂质。
得到这样的研究结果:与现有的通过使用具有含有Mg:1~5原子%、剩余部分包含Cu和不可避免的杂质的组成的铜合金靶材进行溅射而形成的铜合金薄膜相比,通过使用具有上述组成的铜合金靶材进行溅射而得到的铜合金薄膜,电阻率值的偏差少、整体具有均一的电阻率值。
此外,使用具有该组成的铜合金靶材而得到的铜合金膜与现有的铜合金膜相比,氧化物层的化学稳定性高,即,进行热处理而形成的氧化物层难以被还原。因此,得到这样的研究结果:氢退火后的密合性降低小,因此具有作为TFT的布线膜的优异特性。
本发明是基于上述研究结果而成的,具有以下条件。
本发明的用于形成薄膜晶体管用布线膜的溅射靶材具有如下组成:含有Mg:0.1~5原子%、Ca:0.1~10原子%,剩余部分包含Cu和不可避免的杂质。
本发明的用于形成薄膜晶体管用布线膜的溅射靶材中,还可含有Mn和Al中的至少一种或两种合计0.1~10原子%。
进而还可以含有P:0.001~0.1原子%。
本发明的溅射靶材不仅可用于由单层形成的布线膜,而且可用于由叠层结构形成的布线膜。当用于形成由叠层结构形成的布线膜时,可用于形成其最下层的布线基底膜。
发明效果
若使用本发明的靶材进行溅射,则即使玻璃基板变大,也可形成电阻率值的偏差小、而且与玻璃基板表面和Si膜表面的密合性优异、并且电阻率值低的铜合金薄膜,因此,可形成高精细、大型的薄膜晶体管的铜合金布线膜。
此外,使用本发明的靶材形成的TFT用布线膜和TFT用布线基底膜中,进行热处理而形成的氧化物层难被还原。因此,由于氢退火后的密合性降低小,因此具有作为TFT的布线膜的优异特性,并且与玻璃基板表面和Si膜表面的密合性进一步提高。因此,可形成高精细、大型的平板显示器中的TFT用布线膜。
具体实施方式
对如前所述限定本发明的溅射靶材的成分组成的范围的理由进行说明。
Mg:
Mg使结晶粒微细化,抑制构成薄膜晶体管中的布线膜的铜合金薄膜的小丘(hillock)和孔隙等热缺陷的发生,提高耐迁移性。
此外,当进行热处理时,在铜合金薄膜的表面和背面形成含有Mg的氧化物层。由此,具有这样的作用:阻止玻璃基板和Si膜的主成份即Si等向铜合金布线膜的扩散浸透,防止铜合金布线膜的电阻率的增加,同时提高铜合金布线膜与玻璃基板和Si膜的密合性。
为了得到以上的作用效果而添加Mg,但是当其含量不足0.1原子%时,得不到所期待的效果,因而不优选。另一方面,即使含有超过5原子%,特性也不提高,而且电阻率值增加,变得作为布线膜不显示充分的功能,因而不优选。因此,规定铜合金薄膜中含有的Mg为0.1~5原子%。
Ca:
若使用含有Ca:0.1~10原子%使其与Mg:0.1~5原子%共存的靶材进行溅射,则形成的铜合金薄膜的不同位置的电阻率值的偏差减小。因此,含有Ca。
即使含有Mg:不足0.1原子%、Ca:不足0.1原子%,也得不到所期待的效果。另一方面,若使用添加有Mg:超过5原子%、Ca:超过10原子%的靶材进行溅射,则所期待的特性也不进一步提高,特别是形成的铜合金薄膜的电阻上升,因而不优选。
就使用具有这些成分的靶材进行溅射而形成的铜合金薄膜来说,在热处理工序中,选自Mg、Cu和Si的一种以上和Ca的复氧化物或氧化物固溶体在铜合金薄膜的表面和背面形成。由此,特别地,与氢处理工序后的玻璃基板和Si膜的表面的密合性进一步提高。此外,由于在铜合金薄膜表面和背面形成的氧化物含有化学稳定性高的选自Mg、Cu和Si的一种以上和Ca的复氧化物或氧化物固溶体,因此铜合金布线的化学稳定性提高。
Mn、Al:
通过含有这些成分使其与Mg、Ca共存,而使密合性、化学稳定性进一步提高。认为其理由如下:
使用具有这些成分的靶材进行溅射而形成的膜,在热处理工序中,选自Mg、Cu和Si的一种以上、Ca、和Mn及Al的一者或两者的复氧化物或氧化物固溶体在铜合金薄膜的表面和背面形成。由此,特别地,与氢处理工序后的玻璃基板表面和Si膜表面的密合性进一步提高。此外,由于在铜合金薄膜表面和背面形成的氧化物含有化学稳定性高的选自Mg、Cu和Si的一种以上、Ca、和Mn及Al的一者或两者的复氧化物或氧化物固溶体,从而使铜合金布线的化学稳定性提高。
但是,即使具有Mn、Al中的一种或两种合计不足0.1原子%,也得不到使所期待的功能(密合性、化学稳定性)提高的效果,因而不优选。另一方面,即使含有超过10原子%,也不能确认特性提高,而且铜合金布线膜的电阻率值上升,因而不优选。
因此,当含有Mn、Al中的一种或两种时,规定其合计量为0.1~10原子%。
P:
少量的P不会使铜合金薄膜所要求的电阻率、小丘、孔隙、密合性等特性劣化,容易进行铜合金的铸造,因而根据需要添加。
但是,添加不足0.001原子%的P没有效果。另一方面,即使添加超过0.1原子%,铸造性也没有提高。因此,当含有P时,规定其含量为0.001~0.1原子%。
下面说明本发明的用于形成薄膜晶体管的布线膜的靶材的制造方法的一例。
首先,在惰性气体气氛中,将纯度为99.99%以上的无氧铜在高纯度石墨坩埚内高频熔化。向所得熔液中添加Mg 0.1~5原子%、Ca:0.1~10原子%,根据需要,添加Mn和Al中的至少一种或两种合计0.1~10原子%,进而根据需要,添加P:0.001~0.1原子%,并使其熔化。
在惰性气体气氛中铸造所得熔液并使其急冷凝固。接着,根据需要进行热轧,最后实施消除应力退火而得到压延体。接着,对压延体表面进行车床加工。按照上述方法制造靶材。
此外,也可按照如下方法制备靶材:向无氧铜熔液中直接添加Mg、Ca、Mn、Al、P,接着利用雾化等来制备母合金粉末,将该母合金粉末热压。
实施例
准备纯度为99.99质量%的无氧铜,在Ar气氛中,将该无氧铜在高纯度石墨坩埚中高频熔化。向所得熔液中添加Mg和Ca,根据需要添加Mn、Al中的至少一种,进而根据需要添加P,并使其熔化,进行成分调整以使其变为具有表1~3所示的成分组成的熔液。
将所得熔液在冷却了的碳铸模中铸造,再进行热轧。接着,最后进行消除应力退火而得到压延体。
对所得压延体的表面进行车床加工,制备具有外径:200mm×厚度:10mm的尺寸、具有表1~3所示的成分组成的圆板状的本发明例的铜合金溅射靶材(以下称为本发明靶材)1~30、比较例的铜合金溅射靶材(以下称为比较靶材)1~6和现有例的溅射靶材(以下称为现有靶材)1~2。
此外,对于具有脆性而不可热轧的铸锭,不进行热轧、直接从铸锭切出来制备溅射靶材。
此外,准备无氧铜制背板,将上述本发明靶材1~30、比较靶材1~6和现有靶材1~2叠合在该无氧铜制背板上,在200℃的温度下进行铟焊。这样,将本发明例的靶材1~30、比较例的靶材1~6和现有例的靶材1~2连接在无氧铜制背板上,制备带有背板的靶材。
在溅射装置中设置所得带有背板的靶材,使靶材与涂覆有非晶质Si膜的玻璃基板(具有直径:200mm,厚度:0.7mm的尺寸的コーニング社制1737的玻璃基板)间的距离为70mm。
在以下条件下,使用具有表1~3所示的成分组成的靶材,在涂覆有非晶质Si膜的玻璃基板的表面上,形成半径为100mm、厚度为300nm、由含有微量氧的铜合金形成的布线用薄膜。此外,形成的布线用薄膜均为圆形。
电源:直流方式
溅射功率:600w
到达真空度:4×10-5Pa
气氛气体组成:Ar:99容量%、氧:1容量%的混合气体
气压:0.2Pa
玻璃基板加热温度:150℃
将所得圆形布线用薄膜分别装入到加热炉中,在Ar气氛中,实施升温速度为5℃/min、最高温度为350℃、保持30分钟的热处理。
接着,利用四探针法测定实施了热处理的圆形布线用薄膜的中心、距中心50mm的点、距中心100mm的点的电阻率,求出其最大和最小的差。它们的结果如表1~3所示,由此评价布线用薄膜的电阻率值的偏差。
此外,对于实施了热处理的圆形布线用薄膜,如下所述地进行划格粘附试验。
依照JIS-K5400,以1mm的间隔在布线用薄膜上切划棋盘格。然后,粘接3M社制胶带,然后将其撕下,在玻璃基板中央部的10mm见方内测定附着在玻璃基板上的布线用薄膜的面积%。其结果如表1~3所示,对布线用薄膜与涂覆有非晶质Si膜的玻璃基板的密合性进行评价。
对于这些实施了热处理的布线用薄膜的表面,用5000倍的SEM观察5处膜表面,观察有无小丘和孔隙的发生。其结果如表1~3所示。
此外,在以下条件下,对于实施了上述热处理的本发明例的布线用铜合金膜1~30、比较例的布线用铜合金膜1~6和现有例的布线用铜合金膜1~2进行氢退火。
气氛:H2/N2=50/50(Vol%)的混合气体(1个大气压)
温度:300℃
保持时间:30分钟
对于氢退火后的本发明例的布线用铜合金膜1~30、比较例的布线用铜合金膜1~4和现有例的布线用铜合金膜1~2,按照与上述方法同样的方法进行划格粘附试验。其结果如表1~3所示,对氢退火后的本发明例的布线用铜合金膜1~30、比较例的布线用铜合金膜1~6和现有例的布线用铜合金膜1~2与涂覆有非晶质Si膜的玻璃基板的密合性进行评价。
从表1~3所示的结果可知下述事项。
(i)通过使用单独含有Mg的现有靶材1~2进行溅射而形成的布线用薄膜(现有例的布线用铜合金膜1~2),中心部的电阻率与周边部的电阻率的差值大。此外,与涂覆有非晶质Si膜的玻璃基板的密合性差。
与此相对,通过使用含有Mg和Ca,根据需要含有Mn、Al和P的本发明例的靶材1~30进行溅射而形成的布线用薄膜(本发明例的布线用铜合金膜1~30),中心部的电阻率与周边部的电阻率的差值小,因而电阻率值的偏差少。此外,在氢退火前后,与涂覆有非晶质Si膜的玻璃基板的密合性都优异。
(ii)在通过使用含有比本发明的条件低的Mg和Ca的比较例的靶材1进行溅射而形成的布线用薄膜(比较例的布线用铜合金膜1)中,产生小丘和孔隙。由于氢退火前后的密合性低而不优选作为布线用薄膜。
此外,通过使用在本发明的条件之外的大量含有Mg的比较例的靶材2和在本发明的条件之外的大量含有Mg和Ca的比较例的靶材4进行溅射而形成的布线用薄膜(比较例的布线用铜合金膜2,4),与使用添加了Mg和Ca的本发明例的靶材1~9而形成的布线用薄膜(本发明例的布线用铜合金膜1~9)相比,电阻率值变大,不优选作为布线用薄膜。
(iii)通过使用含有比本发明的条件低的Ca、Mn、Al的比较例的靶材3、5进行溅射而形成的布线用薄膜(比较例的布线用铜合金膜3、5),氢退火前后的密合性低,而且电阻率值的偏差大,因而不优选。
通过使用在本发明的条件之外的大量含有Mn和Al的比较靶材6进行溅射而形成的布线用薄膜(比较例的布线用铜合金膜6),电阻率值变得过大,不优选作为布线用薄膜。
产业实用性
通过使用本发明的靶材,可制作电阻率的偏差少、而且与玻璃基板表面和Si膜表面的密合性优异、并且电阻率值低的铜合金薄膜。因此,可适用于制造高精细、大型的平板显示器中的薄膜晶体管的铜合金布线膜的工序。
Claims (3)
1. 用于形成薄膜晶体管用布线膜的溅射靶材,其特征在于,具有如下组成:含有Mg:0.1~5原子%、Ca:0.1~10原子%,剩余部分含有Cu和不可避免的杂质。
2. 根据权利要求1所述的用于形成薄膜晶体管用布线膜的溅射靶材,其特征在于,还含有Mn和Al中的至少一种或两种合计0.1~10原子%。
3. 根据权利要求2所述的用于形成薄膜晶体管用布线膜的溅射靶材,其特征在于,还含有P:0.001~0.1原子%。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001220667A (ja) * | 1999-09-27 | 2001-08-14 | Applied Materials Inc | スパッタされたドープ済みのシード層を形成する方法及び装置 |
JP2004076080A (ja) * | 2002-08-14 | 2004-03-11 | Tosoh Corp | 配線用薄膜およびスパッタリングターゲット |
JP2007059660A (ja) * | 2005-08-25 | 2007-03-08 | Sony Corp | 半導体装置の製造方法および半導体装置 |
CN1985014A (zh) * | 2004-07-15 | 2007-06-20 | 普兰西欧洲股份公司 | 铜合金制造的导线材料 |
JP2008057031A (ja) * | 2006-07-31 | 2008-03-13 | Mitsubishi Materials Corp | 熱欠陥発生のない液晶表示装置用配線および電極並びにそれらを形成するためのスパッタリングターゲット |
JP2008191541A (ja) * | 2007-02-07 | 2008-08-21 | Mitsubishi Materials Corp | 熱欠陥発生がなくかつ密着性に優れた液晶表示装置用配線および電極 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
WO2003008656A2 (en) * | 2001-07-19 | 2003-01-30 | Honeywell International Inc. | Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles |
US7626665B2 (en) * | 2004-08-31 | 2009-12-01 | Tohoku University | Copper alloys and liquid-crystal display device |
CN1839213A (zh) * | 2003-08-21 | 2006-09-27 | 霍尼韦尔国际公司 | 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法 |
-
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- 2009-10-21 WO PCT/JP2009/005525 patent/WO2010047105A1/ja active Application Filing
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- 2009-10-21 KR KR1020117009027A patent/KR20110085996A/ko not_active Application Discontinuation
- 2009-10-21 US US12/998,444 patent/US20110192719A1/en not_active Abandoned
- 2009-10-22 TW TW098135783A patent/TW201033385A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001220667A (ja) * | 1999-09-27 | 2001-08-14 | Applied Materials Inc | スパッタされたドープ済みのシード層を形成する方法及び装置 |
JP2004076080A (ja) * | 2002-08-14 | 2004-03-11 | Tosoh Corp | 配線用薄膜およびスパッタリングターゲット |
CN1985014A (zh) * | 2004-07-15 | 2007-06-20 | 普兰西欧洲股份公司 | 铜合金制造的导线材料 |
JP2007059660A (ja) * | 2005-08-25 | 2007-03-08 | Sony Corp | 半導体装置の製造方法および半導体装置 |
JP2008057031A (ja) * | 2006-07-31 | 2008-03-13 | Mitsubishi Materials Corp | 熱欠陥発生のない液晶表示装置用配線および電極並びにそれらを形成するためのスパッタリングターゲット |
JP2008191541A (ja) * | 2007-02-07 | 2008-08-21 | Mitsubishi Materials Corp | 熱欠陥発生がなくかつ密着性に優れた液晶表示装置用配線および電極 |
Cited By (16)
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CN104066868A (zh) * | 2012-01-23 | 2014-09-24 | 吉坤日矿日石金属株式会社 | 高纯度铜锰合金溅射靶 |
CN104066868B (zh) * | 2012-01-23 | 2016-09-28 | 吉坤日矿日石金属株式会社 | 高纯度铜锰合金溅射靶 |
CN103227206B (zh) * | 2012-01-26 | 2016-02-17 | 株式会社Sh铜业 | 薄膜晶体管、其制造方法以及使用了该薄膜晶体管的显示装置 |
CN103227206A (zh) * | 2012-01-26 | 2013-07-31 | 日立电线株式会社 | 薄膜晶体管、其制造方法以及使用了该薄膜晶体管的显示装置 |
CN103258725A (zh) * | 2012-02-16 | 2013-08-21 | 三菱综合材料株式会社 | 薄膜配线形成方法及薄膜配线 |
CN104812920B (zh) * | 2012-12-28 | 2016-11-02 | 三菱综合材料株式会社 | 溅射靶用铜合金制热轧板及溅射靶 |
CN104812920A (zh) * | 2012-12-28 | 2015-07-29 | 三菱综合材料株式会社 | 溅射靶用铜合金制热轧板及溅射靶 |
CN107208189A (zh) * | 2015-09-09 | 2017-09-26 | 三菱综合材料株式会社 | 电子电气设备用铜合金、电子电气设备用铜合金塑性加工材、电子电气设备用组件、端子及汇流条 |
US10128019B2 (en) | 2015-09-09 | 2018-11-13 | Mitsubishi Materials Corporation | Copper alloy for electronic/electrical device, plastically-worked copper alloy material for electronic/electrical device, component for electronic/electrical device, terminal, and busbar |
US10453582B2 (en) | 2015-09-09 | 2019-10-22 | Mitsubishi Materials Corporation | Copper alloy for electronic/electrical device, copper alloy plastically-worked material for electronic/electrical device, component for electronic/electrical device, terminal, and busbar |
US10676803B2 (en) | 2015-09-09 | 2020-06-09 | Mitsubishi Materials Corporation | Copper alloy for electronic/electrical device, copper alloy plastically-worked material for electronic/electrical device, component for electronic/electrical device, terminal, and busbar |
CN105449001A (zh) * | 2015-12-28 | 2016-03-30 | 昆山国显光电有限公司 | 一种薄膜晶体管及其制作方法 |
US11203806B2 (en) | 2016-03-30 | 2021-12-21 | Mitsubishi Materials Corporation | Copper alloy for electronic and electrical equipment, copper alloy plate strip for electronic and electrical equipment, component for electronic and electrical equipment, terminal, busbar, and movable piece for relay |
US11319615B2 (en) | 2016-03-30 | 2022-05-03 | Mitsubishi Materials Corporation | Copper alloy for electronic and electrical equipment, copper alloy plate strip for electronic and electrical equipment, component for electronic and electrical equipment, terminal, busbar, and movable piece for relay |
US11104977B2 (en) | 2018-03-30 | 2021-08-31 | Mitsubishi Materials Corporation | Copper alloy for electronic/electric device, copper alloy sheet/strip material for electronic/electric device, component for electronic/electric device, terminal, and busbar |
US11655523B2 (en) | 2018-03-30 | 2023-05-23 | Mitsubishi Materials Corporation | Copper alloy for electronic/electric device, copper alloy sheet/strip material for electronic/electric device, component for electronic/electric device, terminal, and busbar |
Also Published As
Publication number | Publication date |
---|---|
JP2010103331A (ja) | 2010-05-06 |
TW201033385A (en) | 2010-09-16 |
KR20110085996A (ko) | 2011-07-27 |
WO2010047105A1 (ja) | 2010-04-29 |
JP5541651B2 (ja) | 2014-07-09 |
US20110192719A1 (en) | 2011-08-11 |
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