CN102110701B - 固态成像装置和成像系统 - Google Patents

固态成像装置和成像系统 Download PDF

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Publication number
CN102110701B
CN102110701B CN2010105972529A CN201010597252A CN102110701B CN 102110701 B CN102110701 B CN 102110701B CN 2010105972529 A CN2010105972529 A CN 2010105972529A CN 201010597252 A CN201010597252 A CN 201010597252A CN 102110701 B CN102110701 B CN 102110701B
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China
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mos transistor
reset
voltage
solid
imaging device
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Expired - Fee Related
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CN2010105972529A
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Chinese (zh)
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CN102110701A (zh
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沖田彰
箕轮雅章
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2010105972529A 2009-12-25 2010-12-21 固态成像装置和成像系统 Expired - Fee Related CN102110701B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-295442 2009-12-25
JP2009295442A JP5538876B2 (ja) 2009-12-25 2009-12-25 固体撮像装置

Publications (2)

Publication Number Publication Date
CN102110701A CN102110701A (zh) 2011-06-29
CN102110701B true CN102110701B (zh) 2013-12-18

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CN2010105972529A Expired - Fee Related CN102110701B (zh) 2009-12-25 2010-12-21 固态成像装置和成像系统

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US (1) US8525896B2 (https=)
EP (1) EP2339629A3 (https=)
JP (1) JP5538876B2 (https=)
CN (1) CN102110701B (https=)

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KR102056905B1 (ko) * 2011-07-25 2019-12-18 삼성전자주식회사 광센싱 장치 및 그 구동 방법, 광센싱 장치를 포함하는 광터치 스크린 장치
US9891102B2 (en) 2010-04-22 2018-02-13 Samsung Electronics Co., Ltd. Simplified light sensing circuit, light sensing apparatus including the light sensing circuit, method of driving the light sensing apparatus, and image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus
US8445828B2 (en) 2010-07-01 2013-05-21 Silicon Optronics, Inc. High dynamic range image sensor with in pixel memory
JPWO2013027524A1 (ja) * 2011-08-24 2015-03-19 シャープ株式会社 固体撮像素子
JP5864990B2 (ja) 2011-10-03 2016-02-17 キヤノン株式会社 固体撮像装置およびカメラ
JP5967915B2 (ja) 2011-12-09 2016-08-10 キヤノン株式会社 固体撮像装置の駆動方法
JP5967944B2 (ja) 2012-01-18 2016-08-10 キヤノン株式会社 固体撮像装置およびカメラ
JP6023437B2 (ja) 2012-02-29 2016-11-09 キヤノン株式会社 固体撮像装置及びカメラ
JP6174901B2 (ja) 2013-05-10 2017-08-02 キヤノン株式会社 固体撮像装置及びカメラ
US9654714B2 (en) 2013-11-01 2017-05-16 Silicon Optronics, Inc. Shared pixel with fixed conversion gain
CN103716559B (zh) * 2014-01-13 2017-02-15 中国科学院上海高等研究院 像素单元读出装置及方法、像素阵列读出装置及方法
JP6109125B2 (ja) 2014-08-20 2017-04-05 キヤノン株式会社 半導体装置、固体撮像装置、および撮像システム
JP6700656B2 (ja) * 2014-10-31 2020-05-27 キヤノン株式会社 撮像装置
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
US10319765B2 (en) 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter

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JP4677258B2 (ja) * 2005-03-18 2011-04-27 キヤノン株式会社 固体撮像装置及びカメラ
JP4459098B2 (ja) * 2005-03-18 2010-04-28 キヤノン株式会社 固体撮像装置及びカメラ
JP4110193B1 (ja) * 2007-05-02 2008-07-02 キヤノン株式会社 固体撮像装置および撮像システム
JP4991436B2 (ja) * 2007-08-02 2012-08-01 キヤノン株式会社 撮像装置及び撮像システム
JP2009117613A (ja) * 2007-11-06 2009-05-28 Toshiba Corp 半導体装置
JP5167799B2 (ja) * 2007-12-18 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
JP5156434B2 (ja) * 2008-02-29 2013-03-06 キヤノン株式会社 撮像装置および撮像システム
JP5568880B2 (ja) * 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
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JP4617372B2 (ja) * 2008-08-29 2011-01-26 キヤノン株式会社 撮像装置及び撮像システム
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242728B1 (en) * 1998-08-20 2001-06-05 Foveon, Inc. CMOS active pixel sensor using native transistors

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Publication number Publication date
US20110157398A1 (en) 2011-06-30
EP2339629A2 (en) 2011-06-29
US8525896B2 (en) 2013-09-03
EP2339629A3 (en) 2012-05-23
JP2011135515A (ja) 2011-07-07
CN102110701A (zh) 2011-06-29
JP5538876B2 (ja) 2014-07-02

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