CN101866901B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN101866901B CN101866901B CN201010155948.6A CN201010155948A CN101866901B CN 101866901 B CN101866901 B CN 101866901B CN 201010155948 A CN201010155948 A CN 201010155948A CN 101866901 B CN101866901 B CN 101866901B
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- Prior art keywords
- lead portion
- semiconductor device
- pipe core
- insulating resin
- core welding
- Prior art date
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Abstract
本发明涉及半导体器件及其制造方法。更具体地,在树脂密封型半导体封装中,为了防止在用于安装半导体芯片的管芯键合材料中产生裂痕。经由管芯键合材料将半导体芯片安装在管芯焊盘的上表面上,而后利用绝缘树脂进行密封。对管芯焊盘将要与绝缘树脂相接触的顶表面进行表面粗糙化,而不对管芯焊盘的底表面以及外引线部分进行表面粗糙化。
Description
相关申请的交叉引用
在此通过引用并入提交于2009年4月9日的日本专利申请号2009-94648的公开内容的全部内容,包括说明书、附图和摘要。
技术领域
本发明涉及半导体器件及其制造方法,具体地,涉及在应用于树脂密封型半导体封装形式的半导体器件及其制造方法时特别有效的技术。
背景技术
在半导体器件中,通过利用绝缘树脂材料等对半导体芯片进行密封(封装)来保护半导体芯片,以保持其性能。例如,半导体器件是这样形成的:利用粘合材料将其上具有集成电路(典型地是存储器电路、逻辑电路、电源电路等)的半导体芯片附接(安装)在引线框的芯片安装部分(管芯焊盘)上,并且利用绝缘树脂来封装部分引线框以及半导体芯片。近年来,铜或者铜合金已被用作引线框的材料,因为其具有高电导和热导并同时成本低廉。
例如,日本未审查专利公开No.2005-191178(专利文献1)公开了一种技术,其在热扩散中形成具有内突侧壁的微坑(dimples),并由此改善与绝缘树脂的粘附性。
日本未审查专利公开No.Hei5(1993)-218275(专利文献2)公开了一种技术,其通过将塑模按压在引线框上来形成微坑,以便改善与密封材料的粘附并由此消除岛的卷曲。
日本未审查专利公开No.2002-83917(专利文献3)公开了一种技术,其通过刻蚀引线框表面的部分在其上选择性地形成多个突起,来实现在树脂与引线框之间具有高粘附性的引线框。
[专利文献1]日本未审查专利公开No.2005-191178
[专利文献2]日本未审查专利公开No.Hei5(1993)-218275
[专利文献3]日本未审查专利公开No.2002-83917
发明内容
作为对具有高热辐射属性的封装结构(半导体封装)的研究结果,发明人发现:管芯焊盘DPa的底表面f2a从绝缘树脂IRa暴露出来的封装(如图21所示)是有效的。通过将管芯焊盘DPa的底表面f2a从绝缘树脂IRa暴露出来,可以将半导体芯片CPa中产生的热量容易地释放到外部。在半导体芯片具有这种形式的情况下,暴露在外部的管芯焊盘DPa的底表面f2a还可以用作电极。
然而,发明人的进一步研究还表明:在具有如图21所示形式的封装的半导体器件中会发生下述问题。具体来说,已经发现:以管芯焊盘DPa的底表面f2a从其暴露的封装形式的半导体器件在温度循环测试等中具有降低的电学属性。还发现:如图22所示,在管芯焊盘DPa与绝缘树脂IRa之间的边界面附近的管芯键合材料DBa中的裂痕ck的生成与温度循环测试中电学属性的降低有关。图22是图21的半导体器件的主要部分p10a的放大视图。发明人已经考虑到了管芯键合材料DBa中生成的裂痕ck,这将在下文详细描述。
当管芯焊盘DPa的底表面f2a暴露在外时,在半导体器件的存放期间,潮气可能渗入绝缘树脂IRa中。请注意,由于管芯焊盘DPa与绝缘树脂IRa之间存在热膨胀系数的差异,因此回流焊接等时候的加热将导致其间边界面的剥落。上述潮气渗入这种剥落的部分将提高剥落的部分的内部压力,并导致膨胀。在温度循环之后,由剥落的部分附近的部件之间的线性膨胀差异所导致的应力将导致管芯键合材料DBa的裂痕ck。
例如,存在这样的半导体器件,其中半导体芯片CPa在其背面也需要导电电极,因此使用管芯焊盘DPa的底表面f2a作为电极。在这种情况下,管芯键合材料DBa需要在半导体芯片CPa与管芯焊盘DPa之间提供导电性。发明人的研究表明:当这种管芯键合材料DBa中出现裂痕时,其可能是电导失效的原因;因此,其可能是半导体器件的电学属性和可靠性降低的原因。
本发明的一个目的是改善具有半导体芯片已由绝缘树脂密封的结构的半导体器件的可靠性,特别是提供一种能够防止管芯键合材料的裂痕的技术。
通过这里的描述和附图,本发明的上述以及其他目的和新颖特征将是易见的。
在本发明的一个模式中,提供一种技术,在通过经由管芯键合材料将半导体芯片安装在管芯焊盘部分的顶表面而获得的半导体器件中,该技术对将要与绝缘树脂接触的管芯焊盘部分的顶表面进行粗糙化,而不对管芯焊盘部分的底表面和外引线部分进行粗糙化。
下面将描述在此公开的多个发明中的典型示例可以获得的优点。
简言之,本发明可以改善具有半导体芯片已由绝缘树脂密封这一结构的半导体器件的可靠性。
附图说明
图1(A)和图1(B)是示出按照本发明的实施方式1的半导体器件的结构的示意图,其中图1(A)是总体平面图,图1(B)是沿图1(A)的线B-B获得的、并按箭头方向查看的剖面图;
图2是按照本发明的实施方式1的半导体器件的示意图;
图3(A)和图3(B)是示出按照本发明的实施方式1的半导体器件的另一结构的示意图,其中图3(A)是总体平面图,图3(B)是沿图3(A)的线B-B获得的、并按箭头方向查看的剖面图;
图4(A)和图4(B)是示出按照本发明的实施方式1的半导体器件的又一结构的示意图,其中图4(A)是总体平面图,图4(B)是沿图4(A)的线B-B获得的、并按箭头方向查看得到的剖面图;
图5(A)和图5(B)是示出按照本发明的实施方式1的半导体器件的另一结构的示意图,其中图5(A)是总体平面图,图5(B)是沿图5(A)的线B-B获得的、并按箭头方向查看的剖面图;
图6(A)和图6(B)是示出按照本发明的实施方式1的半导体器件的另一结构的示意图,其中图6(A)是总体平面图,图6(B)是沿图6(A)的线B-B获得的、并按箭头方向得到的剖面图;
图7是说明按照本发明的实施方式1的半导体器件的制造步骤的流程图;
图8是在与图7的表面粗糙化步骤s102相对应的制造步骤期间按照本发明的实施方式1的半导体器件的断片剖面图;
图9是在图8的步骤之后并且与图7的管芯键合步骤s103相对应的制造步骤期间的半导体器件的断片剖面图;
图10是在图9的步骤之后并且与图7的管芯键合步骤s104相对应的制造步骤期间的半导体器件的断片剖面图;
图11是在图10的步骤之后并且与图7的模塑步骤s105相对应的制造步骤期间的半导体器件的断片剖面图;
图12是在图11的步骤之后并且与图7的桩线切削步骤s106相对应的制造步骤期间的半导体器件的断片剖面图;
图13(A)和图13(B)是示出了按照本发明的实施方式1的半导体器件在其制造步骤期间的示意图,其中图13(A)是断片平面图,图13(B)是沿图13(A)的线B-B获得的、并按箭头方向查看的断片剖面图;
图14是用于说明按照本发明的实施方式1的半导体器件的制造步骤的特性的图示;
图15是用于说明按照本发明的实施方式1的半导体器件的制造步骤的另一特性的图示;
图16(A)和图16(B)是示出按照本发明的实施方式1的半导体器件在其另一制造步骤中的示意图,其中图16(A)是断片平面图,图16(B)是沿图16(A)的线B-B获得的、并按箭头方向查看的断片剖面图;
图17(A)和图17(B)是示出按照本发明的实施方式1的半导体器件在其另一制造步骤中的示意图,其中图17(A)是断片平面图,图17(B)是沿图17(A)的线B-B获得的、并按箭头方向查看的断片剖面图;
图18(A)和图18(B)是示出按照本发明的实施方式1的半导体器件在其又一制造步骤中的示意图,其中图18(A)是断片平面图,图18(B)是沿图18(A)的线B-B获得的、并按箭头方向查看的断片剖面图;
图19(A)和图19(B)是示出按照本发明的实施方式1的半导体器件在其另一制造步骤中的示意图,其中图19(A)是断片平面图,图19(B)是沿图19(A)的线B-B获得的、并按箭头方向查看的断片剖面图;
图20是示出按照本发明的第二实施方式的半导体器件的结构的剖面图;
图21是示出发明人所研究的半导体器件的结构的剖面图;
图22是图21的半导体器件的断片放大视图;以及
图23是图21的半导体器件的示意图。
具体实施方式
在下文描述的实施方式中,为方便起见,描述将分为多个部分或者实施方式来进行。除非另行特别指明,否则这些部分或实施方式并非彼此无关,并且一个部分或实施方式与其它或者所有部分或实施方式的关系可以是诸如修改、详述和补充说明。在下文描述的实施方式中,当提及要素的数目等时(包括数目、数值、数量和范围),除非另行特别指明以及这些数目在理论上明显限于特定数目的情况之外,其并不限于特定的数目,而是可以大于或者小于特定的数目。此外,在下文描述的实施方式中,配置要素(包括要素步骤等)显然未必是不可或缺的,除非另行特别指明或是从理论的角度考虑其为明显不可或缺的情况等。类似地,在下文描述的实施方式中,当提及配置要素等的形状、位置关系等时,应当包括与该形状基本上相近或类似的形状,除非另行特别指明或是从理论的角度看其明显不正确的情况。这一声明同样适用于上面所述的数值和范围。在用于描述下述实施方式的所有附图中,具有类似功能的部件将通过类似的标号来标识,并且将尽可能地省略重复的描述。此后,将参考某些附图来详细描述本发明的实施方式。
(实施方式1)在实施方式1中,首先,将具体地描述具有发明人所研究结构的半导体器件及其制造方法所具有的问题。
如参考图21和图22所描述的,已经发现,在其中管芯焊盘DPa的底表面f2a从绝缘树脂IRa暴露出来的封装(半导体封装)结构中,在管芯焊盘DPa与绝缘树脂IRa之间的边界附近,绝缘树脂(模塑树脂)IRa可能容易剥落。因此,半导体具有其可靠性降低的问题。作为以克服该问题为目的的进一步研究的结果,发明人发现:通过对管芯焊盘DPa的表面和多个引线部分LDa进行刻蚀和粗糙化,可以改善与绝缘树脂IRa的粘附性。绝缘树脂IRa填充在通过表面粗糙化形成的凹陷和凸起中,并且展现出了防止剥落的锚固效应。当绝缘树脂IRa是环氧树脂时,这种效应是显著的。
接下来将主要描述包括具有这种防止剥落效应的引线框LFa的表面粗糙化步骤的半导体器件的制造方法。
首先,将已经在其上完成了半导体元件形成的半导体晶片切割为半导体芯片CPa。而且,制备引线框LFa,该引线框LFa包括,包含铜或铜合金的管芯焊盘DPa以及多个引线部分LDa。将引线框LFa沉浸在刻蚀溶液中,并且将其刻蚀为具有粗糙的表面。继而,利用管芯键合材料DBa将半导体芯片CPa键合至引线框LFa的管芯焊盘DPa上,并且利用键合布线BWa将半导体芯片CPa上的期望电极耦合至期望的引线部分LDa。继而,利用绝缘树脂IRa来封装这样获得的配置,随后切削将管芯键合垫DPa固定至引线框LFa的悬挂引线部分。继而,去除包含绝缘树脂IRa的无用部分的树脂毛刺。在期望的镀敷步骤和期望的标印步骤之后,对已经切削了无用部分的引线部分进行模塑,由此完成半导体器件的制造。
如上所述,对引线框LFa的刻蚀和表面粗糙化可以改善与绝缘树脂IRa的粘附性。从这个角度说,已经发现:可以抑制由于温度循环而导致的管芯键合材料DBa中裂痕ck的产生,并且可以改善可靠性。然而,发明人的进一步研究表明:在上述表面粗糙化技术中将出现另一问题。
例如,在对引线框LFa的上表面和下表面二者都进行刻蚀以使其粗糙时,表面粗糙化甚至扩展到了管芯焊盘DPa的底表面f2a。这意味着,绝缘树脂IRa也将牢固地粘附至粗糙的底表面f2a。在实施方式1的半导体器件中,管芯焊盘DPa的底表面f2a应当从绝缘树脂IRa暴露出来。然而,如图23所示,即使在毛刺去除步骤之后,已经牢固粘附至管芯焊盘DPa底表面f2a的绝缘树脂Ira仍有可能残留下来成为树脂毛刺BR。图23是示出在此研究的半导体器件的外观的示意图。残留在管芯焊盘DPa的暴露底表面f2a上的树脂毛刺BR可能是安装失败或者电学属性失效的原因。而且,这种树脂毛刺BR可能进入随后的切削步骤等,并且导致杂质的产生。
为了避免这种问题,发明人已经研究出了一种刻蚀引线框LFa的一个表面(顶表面)而不使管芯焊盘DPa的底表面f2a粗糙化的方法。这使得能够产生如上所述的抑制管芯键合材料DBa中产生裂痕ck的效果,而不会留下如图23所示的树脂毛刺BR。
然而,发明人的进一步研究表明:对引线框LFa的一个表面(上表面)进行粗糙化的上述方法将导致如下所述的问题。
例如,当对将要与键合布线BWa耦合的内部引线部分ILa已经进行了镀敷时,表面粗糙化可能损坏镀敷部分,虽然这取决于镀敷类型和表面粗糙化刻蚀溶液类型的组合。对主传导部分的这种损坏可能变成电学属性降低的原因之一,并且可能最终变成所得的半导体器件的可靠性降低的原因。
而且,当表面粗糙化延伸到例如绝缘树脂IRa外部的外引线部分OLa或者用于将管芯焊盘固定至引线框的悬挂引线部分时,已经牢固粘附的绝缘树脂IRa可能残留在这些区域中。已经发现,当树脂残留在这些部分中时,特别是残留在将要在随后步骤中切削的区域(例如,桩线)中时,在切削步骤中残渣可能落下,并且变成杂质粒子生成或者破坏切削管芯的残渣的原因。
如上所述,发明人的研究已经发现,当引线框LFa的一个表面完全被粗糙化时,即使粗糙化该一个表面也将降低半导体器件的可靠性。在实施方式1中,为了克服这一问题,将描述使用通过仅对一个表面的部分进行粗糙化而获得的引线框的半导体器件及其制造方法。
图1(A)是按照实施方式1的半导体器件的总体平面图,图1(B)是沿图1(A)的线B-B获得的、并按箭头方向查看的剖面图。实施方式1的半导体器件具有以下配置。请注意,图1(A)的总体平面图是通过绝缘树脂IR1查看的视图。
实施方式1的半导体器件具有管芯焊盘DP1和多个引线部分LD1。管芯焊盘DP1包括主要包含铜的导体。如将会在稍后对其制造方法的描述中所具体描述的,管芯焊盘DP1和多个引线部分LD1是最初配置相同引线框LF1的部件。相应地,该多个引线部分LD1以及管芯焊盘DP1用相同的材料制成,也就是主要包含铜的导体。从上向下看该半导体器件的全部时,该管芯焊盘DP1是放置在半导体器件的中心部分的矩形平坦片部件。该具有平坦片形式的管芯焊盘DP1具有从厚度方向看彼此相对地放置的顶表面(表面、第一主表面)f1以及底表面(第二主表面)f2。所述多个引线部分LD1放置在管芯焊盘DP1的周围使得其在矩形管芯焊盘DP1的水平方向上沿着两侧进行延伸并且彼此相间隔。
在矩形管芯焊盘DP1的短侧方向上的端部形成悬挂引线部分SL1。换句话说,该悬挂引线部分SL1放置为在所述矩形管芯焊盘DP1的短侧方向上的端部突出。与管芯焊盘PD1以及多个引线部分LD1相似地,所述悬挂引线部分SL1也是配置相同引线框LF1的部件。将在稍后对制造方法的描述中更为具体地的描述。
管芯焊盘DP1在其顶表面f1上具有半导体芯片CP1,其配备有配置期望的集成电路等的半导体元件。半导体芯片CP1位于管芯焊盘DP1的顶表面f1之上,从而利用管芯键合材料DB1将前者键合至后者。换言之,半导体芯片CP1经由管芯键合材料DB1而置于管芯焊盘DP1的顶表面f1。管芯键合材料DB1可以是具有导电性的树脂粘合材料或者焊接材料。
多个引线部分LD1和半导体芯片CP1经由多个键合布线BW1来耦合。多个键合布线BW1耦合至半导体芯片CP1上的焊盘电极(未示出)。通过形成于半导体芯片CP1上的互连使得焊盘电极与半导体元件导通。多个引线部分LD1中每个引线部分的一部分已经利用主要包含银(Ag)或Ni的导体进行了镀敷,并且多个键合布线BW1分别耦合至经过镀敷的部分。
将多个引线部分LD1中每个引线部分的一部分、管芯焊盘DP1和悬挂引线部分SL1以及半导体芯片CP1进行整体密封。绝缘树脂IR1是包含环氧树脂的树脂材料。
上述悬挂引线部分SL1是用于在整个引线框F1上支撑管芯焊盘DP1的部件,并且其在利用绝缘树脂IR1的密封步骤完成之后被切削,这将在稍后对制造方法的描述中进行详细描述。由此,悬挂引线部分SL1的端表面的一部分从绝缘树脂IR1暴露出来。
利用绝缘树脂IR1对多个引线部分LD1中每个引线部分已经镀敷并且耦合至多个键合布线BW1中每一个的部分进行封装。多个引线部分LD1中每个引线部分的这种利用绝缘树脂IR1覆盖的部分称为“内引线部分IL1”。多个引线部分LD 1中每个引线部分的其他部分没有利用绝缘树脂IR1进行密封,并且被形成为将要抽取到绝缘树脂IR1之外。多个引线部分LD1中每个引线部分的、暴露并抽取在绝缘树脂IR1外部的部分称为“外引线部分OL1”。
这种结构实现从外部到半导体芯片CP 1的电耦合,所述电耦合通过经由多个键合布线BW1耦合至该处的多个引线部分LD1。
在实施方式1的半导体器件中,管芯焊盘DP1的底表面f2暴露在绝缘树脂IR1之外。通过暴露管芯焊盘DP1的底表面f2,半导体芯片CP1所产生的热量容易地散到外部。简言之,实施方式1的半导体器件具有带有高热辐射属性的封装结构。
在实施方式1的半导体器件中,管芯焊盘DP1、多个引线部分LD1以及悬挂引线部分SL1具有部分粗糙的表面。术语“粗糙表面”表示经过粗糙化的表面。
图2是示出管芯焊盘DP1、多个引线部分LD1以及悬挂引线部分SL1的部分的示意图,这些部分具有粗糙表面。这里使用的术语“粗糙表面”表示如图2所示的具有不规则的微小凹陷和凸起的表面。在实施方式1中,术语“凹陷和凸起”表示算术平均粗糙度Ra优选地在0.2到0.5μm范围内的粗糙表面。其原因将在稍后详细描述,因为这与表面粗糙化处理工艺有关。不具有粗糙表面的区域的算术平均粗糙度为0.1μm或更小。
术语“算术平均粗糙度Ra”表示这样获得的值:从图2所示的凹凸曲线上,仅对平均线av方向上的参考长度进行采样,将从平均线av采样的部分相对于测量曲线的偏差的绝对值相加,继而对其进行平均。定性地看,凹陷和凸起之间的高度差越大并且其变化范围越宽,算术平均粗糙度Ra越大。
下面将更为具体地描述管芯焊盘DP1、多个引线部分LD1以及悬挂引线部分SL1的粗糙表面区域。图1中所示的管芯焊盘DP1、多个引线部分LD1以及悬挂引线部分SL1的粗糙表面在总体平面图(图1(A))中带有阴影,而在断片剖面图(图1(B))中以粗体实线示出。在实施方式的半导体器件中,每个管芯焊盘DP1的一个面(顶面)、多个引线部分LD1的内引线部分IL1以及与绝缘树脂IR1接触的悬挂引线部分SD1是粗糙表面。如上所述,这能够改善绝缘树脂IR1与管芯焊盘DP1、多个引线部分LD1以及悬挂引线部分SL1之间的粘附性。在实施方式1的半导体器件中,管芯焊盘DP1的底表面f2暴露在绝缘树脂IR1外部,并且管芯焊盘DP1的底表面f2不是粗糙表面。
更具体地,在实施方式1的半导体器件中,管芯焊盘DP1的、包括其与绝缘树脂IR1接触部分的顶表面f1是粗糙表面。这能够改善管芯焊盘DP1与绝缘树脂IR1之间在其表面边界处的粘附性。这使得难以造成半导体芯片CP外围的管芯焊盘DP1与绝缘树脂IR1之间的剥落。因此,尽管因为管芯焊盘DP1的底表面f2是暴露的而使该封装结构看似易受潮气侵害,但是至少在管芯键合材料DB1的外围处,它不易受到潮气侵害。这可以防止在管芯键合材料DB1中产生裂痕。因此,具有利用绝缘树脂密封的半导体芯片的半导体器件可以具有进一步改善的可靠性。
而且,在实施方式1的半导体器件中,由于管芯焊盘DP1的底表面f2暴露在外,因此管芯焊盘DP1本身可以用作电极,用于独立于多个引线部分LD1而将管芯焊盘DP1本身电耦合至半导体芯片CP1。当管芯焊盘DP1本身被用作电极时,期望没有树脂毛刺残留在管芯焊盘DP1的底表面f2上,因为包含例如环氧树脂的、作为绝缘体的绝缘树脂IR1的毛刺残留在用作电极的管芯焊盘DP1上,可能会出现电学问题。在实施方式1的半导体器件中,从绝缘树脂IR1暴露出来的管芯焊盘DP1的底表面f2不是粗糙表面,并且没有展示出与绝缘树脂IR1的高粘附性,从而使树脂毛刺在毛刺去除步骤之后很难残留。这种结构可以实现不存在电学问题的半导体器件。
作为形成于半导体芯片CP1上的元件,还存在这样的元件,其在半导体芯片的较高侧和较低侧二者上都具有电极。换言之,存在这样的元件,其在与多个键合布线BW1耦合并且经由管芯键合材料DB1与管芯焊盘DP1键合的表面的相对面上具有电极。在这种情况下,使用具有导电性的材料作为管芯键合材料DB1。焊接材料是这种具有导电性的材料的示例。当使用具有导电性的材料作为管芯键合材料DB1时,使用管芯焊盘DP1作为电极允许经由管芯键合材料DB1提供与半导体芯片CP1的电导。从这个角度看,将使用耐裂痕管芯键合材料的实施方式1的半导体器件应用于管芯键合材料DB1本身被用作导电部件的结构是更为有效的,因为当管芯键合材料DB1被用作导电部件时,其中产生的裂痕可能是电导失效的原因。因此,具有利用绝缘树脂密封的半导体芯片的半导体结构可以具有进一步改善的可靠性。
此外,在实施方式1的半导体器件中,多个引线部分LD1中每一个的外引线部分OL1不具有粗糙表面。如上所述,外引线部分OL1从绝缘树脂IR1暴露出来,并且实际上绝缘树脂IR1没有附接至该部分。当这种外引线部分OL1具有粗糙表面时,与绝缘树脂IR1的粘附性增加,使得难以去除在制造步骤期间附接的树脂毛刺。树脂附接至实际上不应附接的部分可能导致问题。例如,在桩线切削步骤(将在稍后具体描述)中,落下的树脂可能变成杂质粒子生成或者损坏切削塑模的原因。另一方面,实施方式1的半导体器件不太可能导致如上所述的问题,因为外引线部分OL1不具有粗糙表面,并且因此绝缘树脂IR1不会轻易与之附接。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有进一步改善的可靠性。
图3是示出类似于图1中区域的实施方式1的另一半导体器件的区域的示意图。在实施方式1的半导体器件中,如图3所示,较为优选地,利用绝缘树脂IR1密封的部分p11(其是多个引线部分LD1中每一个的部分),也即内引线部分IL1,不具有粗糙表面,因为如上所述,内引线部分IL1有时要经过镀敷处理以便耦合至多个键合布线BW1,并且镀敷部分可能在稍后描述的表面粗糙化步骤中被损坏。因此,可以通过不对内引线部分IL1的表面进行粗糙化,来降低对镀敷部分的损坏。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有进一步改善的可靠性。
发明人的验证表明:将对引线框LF1的表面粗糙化步骤(将在稍后详细描述)与镀Ni相结合,镀敷部分可以特别容易受到损坏。因此,将上述结构应用于利用主要包含Ni的导体进行镀敷的内引线部分ILa更为有效。
图4是类似于图1中区域的实施方式1的另一半导体器件的区域的示意图。在实施方式1的半导体器件中,较为优选地,利用绝缘树脂IR1密封的部分p12(其是悬挂引线部分SL1的部分)不具有粗糙表面。原因如下。如上所述,悬挂引线部分SL1是最初配置与管芯焊盘DP1和多个引线部分LD1作为整体的引线框LF1的部件,并且其在利用绝缘树脂IR1密封(该步骤稍后描述)之后被切削。当牢固附接的绝缘树脂IR1残留在要切削的位置时,残渣可能在切削步骤中落下,并且变成杂质粒子产生或者破坏切削塑模的原因。因此,通过不对悬挂引线部分SL1的表面进行粗糙化并由此不增加与绝缘树脂IR1的粘附性,该结构可以容易地避免这种问题。
在具有参考图3和图4描述的结构的半导体器件中,如果由于缩窄粗糙表面区域而使得绝缘树脂IR1的粘附性降低,则会担心削弱上述优势。然而,发明人的进一步验证表明:由于以下原因,不会发生对优势的这种削弱。
在如图3和图4所示的实施方式1的半导体器件中,通过不对内引线部分IL1或者悬挂引线部分SL1的表面进行粗糙化,可以消除对镀敷部分的损坏或者在切削步骤中的问题,但是在这些部分,与绝缘树脂IR1的粘附性降低。然而,发明人发现:当水渗入到管芯焊盘DP1与绝缘树脂IR1之间的剥落中之后,在热循环之后出现压力,并且在管芯键合材料DB1中出现裂痕。因此,半导体芯片CP1外围处绝缘树脂IR1从管芯焊盘DP1剥落是管芯键合材料DB1中裂痕的原因,从这个角度看,绝缘树脂IR1从内引线部分IL1或者悬挂引线部分SL1的剥落不会造成问题。换言之,当从顶部查看时,按照实施方式1的半导体器件其围绕半导体芯片CP1外围的管芯焊盘DP1的顶表面f1的部分具有粗糙表面对于抑制管芯键合材料DB1中的裂痕而言是最为有效的。由此,在如图3或图4中所示的实施方式1的结构中,内引线部分IL1或者悬挂引线部分SL1的一个表面(上表面)没有进行粗糙化,这种结构不会干扰上述问题的解决,同时可以避免对镀敷部分的损坏或者切削步骤中的问题。
图5和图6是示出类似于图所示区域的实施方式1的又一半导体器件的区域的示意图。具体地,在图5(A)或者图6(A)的整体平面图中,为方便起见省略了半导体芯片CP1和多个键合布线BW1。在上文描述中,管芯焊盘DP1的顶表面f1全部是粗糙的。在实施方式1的半导体器件中,管芯焊盘DP1要与绝缘树脂IR1接触的表面是粗糙的是有效的,并且位于半导体芯片CP1之下并且不与绝缘树脂IR1接触的部分p13可以具有粗糙表面(如图5所示)或者不具有粗糙表面(如图6所示)。然而,在实施方式1的半导体器件中,当管芯键合材料DB1是树脂粘合材料时,在半导体芯片CP1之下并且与管芯键合材料DB1接触的管芯焊盘DP1的部分p13优选地具有粗糙表面,因为出于与绝缘树脂IR1类似的锚固效应,树脂粘合材料与具有粗糙表面的管芯焊盘DP1的粘附性的改善是可期的。由此,可以改善管芯焊盘DP1与包含树脂粘合材料的管芯键合材料DB1之间的粘附性,并由此使结构抗剥落。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有进一步改善的可靠性。
从另一角度看,当绝缘树脂IR1与管芯焊盘DP1、内引线部分IL1或者悬挂引线部分SL1接触之处具有较大的粗糙表面时,可以实现与绝缘树脂IR1的较高粘附性。另一方面,如上所述,诸如多个引线部分DL1和悬挂引线部分SL1等处优选地不具有粗糙表面。因此,在实施方式1的半导体器件中,与绝缘树脂IR1接触同时又具有粗糙表面的管芯焊盘DP1的部分优选地大于半导体芯片CP1与绝缘树脂IR1接触的部分。下面将描述其原因。
由于随着半导体芯片CP1尺寸的增加,经由管芯键合材料DB1与管芯焊盘DP1的粘附面积变得较大,因此剥落比率增加。换言之,半导体芯片CP1越大,在管芯键合材料DB1中越倾向于出现裂痕。因此,在实施方式1的半导体器件中,有效的是对管芯焊盘DP1在半导体芯片CP1外围处的表面进行粗糙化,以改善与绝缘树脂IR1的粘附性。术语“半导体芯片CP1与绝缘树脂IR1接触的部分的面积”意味着管芯焊盘DP1的顶表面f1未与绝缘树脂IR1接触的部分的面积。由此,通过保持粗糙表面部分大于管芯焊盘DP1的顶表面f1上的半导体芯片CP1的面积,可以维持与绝缘树脂IR1的粘附性并且可以抑制裂痕的产生。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有进一步改善的可靠性。
如上所示,在实施方式1中,通过对管芯焊盘DP1、多个引线部分DP1以及悬挂引线部分SL1将与绝缘树脂IR1接触的表面进行粗糙化,半导体器件可以具有改善的可靠性。这里,通过对表面进行部分粗糙化,例如不对多个引线部分LD1需要镀敫的表面或者悬挂引线部分SL1需要切削的表面进行粗糙化,可以获得有效的结构。
下面将描述实施方式1的半导体器件的有效制造方法,包括对管芯焊盘DP1、多个引线部分LD1和悬挂引线部分SL1的表面进行部分粗糙化的步骤。首先,参考图7的流程图和断片剖面图(图8到图12)在制造方法的组成步骤中对该方法进行总体描述。部件的名称对应于参考图1等所描述的部件名称,并且部件的形状和材料与其类似,除非另行特别指明。
首先,将已经通过使用各种工艺完成了半导体元件形成和互连的半导体晶片切割为半导体芯片CP1(图1的切割步骤s101)。与半导体芯片独立地,制备引线框LF1,其具有管芯焊盘DP1、悬挂引线部分LD1以及多个引线部分LD1,并且由主要包含铜的导体制成。将在稍后步骤(图1的模塑步骤s105)中利用绝缘树脂IR1进行密封的、多个引线部分LD1的部分称为“内引线部分IL1”,而从绝缘树脂IR1中暴露出来而没有被其密封的部分称为“外引线部分OL1”。引线框OF1配备有桩线tb1(也称为阻尼器),其用于桥接引线部分LD1以防止其在被密封的同时在其末端部分彼此接触。
继而,如图8所示,在按照实施方式1的半导体器件的制造方法中,对引线框LF1进行部分表面粗糙化(图1的表面粗糙化步骤s102)。利用化学溶液的刻蚀使引线框LF1的表面粗糙化。在表面粗糙化期间,利用保护部件覆盖引线框LF1未被表面粗糙化的部分,以防止该区域中的刻蚀。保护部件例如是夹具或者掩模带MT。备选地,其可以是通过光刻的构图获得的光抗蚀剂膜。然而,在按照实施方式1的半导体器件的制造方法中,使用掩模带MT作为保护部件更为优选,因为使用掩模带MT能够在引线框LF1上精确地形成覆盖有保护部件的部分以及未覆盖保护部件的部分。稍后将详细描述用于实现表面粗糙化的方法及其优点以及将要进行表面粗糙化的特定区域及其优点。
如图9所示,继而经由管芯键合材料DB1将半导体芯片CP1键合在管芯焊盘DP1的顶表面f1上(图1的管芯键合步骤s103)。管芯键合材料DB1可以是具有导电性的焊接材料或者包括环氧树脂的树脂粘合材料。继而,如图10所示,经由键合布线BW1将多个引线部分LD1与半导体芯片CP1彼此键合(图1中的布线键合步骤s104)。在此步骤中,键合布线BW1与多个引线部分LD1的内引线部分IL1耦合。内引线部分IL1已经经过了镀敷处理。
继而,如图11所示,利用绝缘树脂IR1对多个引线部分LD1的内引线部分IL1、管芯焊盘DP 1的一部分、悬挂引线部分SL1以及半导体芯片CP1进行整体密封(图1的模塑步骤s105)。作为管芯焊盘DP1的所述部分,利用绝缘树脂IR1对顶表面f1进行封装,而对底表面f2不利用绝缘树脂IR1进行封装。这使得能够实现管芯焊盘DP1的底表面从绝缘树脂IR1暴露出来的结构。
在模塑步骤之后的步骤中,切削为了防止引线框LF1中的引线接触而放置的桩线tb1(图1的桩线切削步骤s106)。在此步骤中,绝缘树脂IR1外部的悬挂引线部分SL1也被切削。继而,在去除树脂毛刺(图1的毛刺去除步骤s107)之后,执行镀敷步骤s108和标印步骤109。最后,在引线切削/形成步骤s110中,如图12所示,切削绝缘树脂IR1外部的多个引线部分LD1,并且使外引线部分OL1弯曲,以完成实施方式1的半导体器件的形成。
接下来将更为详细地描述上述表面粗糙化步骤s102。图13(A)和图13(B)是表面粗糙化步骤s102中的引线框LF1的断片平面图和断片剖面图,其中图13(A)和图13(B)中所示的区域分别与图1对应。如图13所示,在按照实施方式1的半导体器件的制造方法中,对将在稍后的模塑步骤s105中与绝缘树脂IR1接触的引线框LF1部分进行表面粗糙化,如图13所示。具体来说,对多个引线部分LD1与引线框LF1重叠的内引线部分IL1进行表面粗糙化。换言之,在按照实施方式1的半导体器件的制造方法中的表面粗糙化步骤s102中,对引线框LF1的背表面(包括管芯焊盘DP1的底表面f2)不进行表面粗糙化,而对多个引线部分LD1的外引线部分OL1进行表面粗糙化。如上所述,这种表面粗糙化能够改善引线框LF1与绝缘树脂IR1之间的粘附性。
特别地,对管芯焊盘DP1的顶表面f1(包括管芯焊盘DP1将与绝缘树脂IR1接触的部分)进行粗糙化。这种表面粗糙化能够实现参考图1描述的结构,改善其边界面处管芯焊盘DP1与绝缘树脂IR1之间的粘附性,以及防止发生剥落。即使封装允许通过从其暴露的管芯焊盘DP1的底表面f2的水分渗入,也可以防止在管芯键合材料DB1中出现裂痕,否则将由于边界面处的剥落而出现这种情况。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有进一步改善的可靠性。
仅仅出于改善引线框LF1与绝缘树脂IR1之间粘附性的目的,对引线框LF1的顶表面和底表面二者都进行粗糙化而不论其是否将与绝缘树脂IR1接触是比较容易的,因为这可以省去针对部分曲面粗糙化而形成掩模带MT等的步骤,该步骤已在上文的曲面粗糙化步骤s102中参考图8进行了描述。然而,在按照实施方式1的半导体器件的制造方法中,为了实现上文参考图1描述的优点,采用部分曲面粗糙化步骤。下面将具体描述其原因。
如参考图1所述,在实施方式1的半导体器件中,管芯焊盘DP1的底表面f2从绝缘树脂IR1暴露出来,从而使管芯焊盘DP1的底表面f2可被用作电极。在将要用作电极的管芯焊盘DP1的顶表面f2上残留树脂毛刺(其是绝缘体)是不推荐的。从这个角度看,使用按照实施方式1的半导体器件的制造方法是较为有效的。管芯焊盘DP1的底表面f2不进行表面粗糙化,使得即使在模塑步骤s105中绝缘树脂IR1离开底表面f2并且变成树脂毛刺,也不会牢固地粘贴并且可以容易地去除。
此外,在按照实施方式1的半导体器件的制造方法中,多个引线部分LD1的外引线部分OL1不进行表面粗糙化。由于上文所述的那些原因,即使绝缘树脂IR1附接至外部引线部分OL1或者桩线tb1,其不会牢固地粘贴,并且可以容易地去除。例如,当绝缘树脂IR1牢固地附接至外引线部分OL1和桩线tb1并且由于对其进行了表面粗糙化而无法去除时,在稍后将要进行的桩线切削步骤s106或者引线切削/形成步骤s110中,可能发生诸如由于绝缘树脂IR1落下而导致的杂质粒子生成或者切削塑模损坏等问题。在按照实施方式1的制造方法中,对外引线部分OL1没有进行表面粗糙化,从而可以避免这种问题。尽管对多个引线部分LD1中每一个的一部分没有进行表面粗糙化,并且添加了形成掩模带MT等的步骤从而增加了制造步骤的数目,但是这种方法对于获得具有改善的可靠性的半导体器件而言是有效的。
由于上文所述的原因,按照实施方式1的半导体器件的制造方法采用部分表面粗糙化步骤,其中,只对引线框LF1的一部分进行表面粗糙化,而不对其他部分进行表面粗糙化。
存在多种刻蚀方法使用化学溶液用于铜制引线框LF1的表面粗糙化。上文所述的效果对于这些方法而言分别是可期的。然而,在按照实施方式1的半导体器件的制造方法中,基于发明人的下述验证,优选地通过使用主要包含双氧水和硫酸的混合物的刻蚀溶液来进行表面粗糙化步骤s102。
图14是相对于温度循环数目来说明绝缘树脂剥落率的改变对表面粗糙程度的依赖关系的图示。在此使用的术语“温度循环数目”表示应用于待测试的半导体器件的加热或者冷却循环的数目。表面粗糙化程度按照框在上述双氧水和硫酸的混合溶液中的沉浸时间(刻蚀时间)而改变。该图包括刻蚀时间为0秒(没有进行表面粗糙化)、15秒、30秒和60秒的表面粗糙程度。发明人已经验证,当刻蚀时间为15秒时,铜制的框具有约为0.2μm的算术平均粗糙度Ra;当刻蚀时间为30秒时,其具有约为0.3μm的算术平均粗糙度Ra;当刻蚀时间为60秒时,其具有约为0.45μm的算术平均粗糙度Ra。进一步的验证表明,当刻蚀时间增加并且达到约60秒时,算术平均粗糙度Ra的增加达到饱和。因此,实施方式1中的刻蚀可以在引线框LF1a上形成算术平均粗糙度Ra从0.2μm到0.5μm的具有凹陷和凸起的粗糙表面。而且,发明人已经确认,引线框LF1中未被刻蚀因此不具有粗糙表面的区域的算术平均粗糙度Ra为0.1μm或更小。
在不执行表面粗糙化时,如图14所示,在温度循环约为500时,绝缘树脂剥落率超过80%。另一方面,在执行表面粗糙化时,在相同的条件下绝缘树脂剥落率在40%之下,这表明其是有效的。对于进行了60秒刻蚀并因此具有约为0.45μm的算术平均粗糙度Ra的样本,几乎从其观察不到剥落。
图15是用于相对于温度循环数目来说明由于存在或者不存在表面粗糙化处理而导致的热导变化率的差异。在此使用的术语“热导变化率”表示例如图1所示的半导体器件中的半导体芯片CP1与管芯焊盘DP1之间的热导的变化率。管芯键合材料中裂痕数目的增加将导致分别位于管芯键合材料之上和之下的半导体芯片CP1与管芯焊盘DP1之间的热导降低。简言之,热导变化率可以认为是管芯键合材料DB1中的裂痕产生率。
如图15所示,当不执行表面粗糙化时,在温度循环数目超过500处可以观察到热导率变化率,表明在管芯键合材料DB1中出现了裂痕。另一方面,当执行表面粗糙化时,即使温度循环数目超过750,热导变化率也几乎保持为0%,这表明管芯键合材料DB1中裂痕的出现得到了抑制。
通过上述验证已经确认,在按照实施方式1的半导体器件的制造方法中,通过刻蚀对引线框LF1进行表面粗糙化对于抑制管芯键合材料DB1中裂痕的出现而言是有效的。特别地,已经发现,利用主要包含双氧水和硫酸的混合溶液的刻蚀溶液对引线框LF1进行部分表面粗糙化是更为有效的。已经发现,利用这种混合溶液进行那个刻蚀的引线框LF1具有算术平均粗糙度Ra约为0.2μm到0.5μm的粗糙表面。换言之,已经确认,当引线框LF1具有算术平均粗糙度Ra约为0.2μm到0.5μm的、具有凹陷和凸起的粗糙表面时,可以实现上文描述的效果。
接下来将具体描述将要进行曲面粗糙化的区域。图16(A)、图17(A)和图18(A)以及图16(B)、图17(B)和图18(B)分别是图7的表面粗糙化步骤s102中的半导体器件的断片平面图和断片剖面图,其中(A)和(B)中所示的区域类似于图13中所示的区域。
在按照实施方式1的半导体器件的制造方法的表面粗糙化步骤s102中,较为优选地,利用掩模带MT来覆盖多个引线部分LD1中每一个的、将要在稍后执行的模塑步骤s105中利用绝缘树脂IR1进行密封的部分p11(也即,内引线部分IL1),并且不对该部分执行表面粗糙化。这种选择性表面粗糙化能够形成具有参考图3描述的结构的半导体器件。换言之,通过不对内引线部分IL1的表面进行粗糙化,可以降低对镀敷部分的损坏。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有进一步改善的可靠性。
发明人的验证表明:当如实施方式1中那样利用双氧水和硫酸的混合溶液来执行用于引线框LF1的表面粗糙化的刻蚀时,取决于镀敷材料的类型,损坏程度有所不同。例如,在利用Ag镀敷的情况下,由刻蚀溶液造成的损坏没有严重到对电学属性产生不利影响。另一方面,在利用Ni镀敷的情况下,由刻蚀溶液造成的损坏严重到了对电学属性产生不利影响。因此,如上所述,当应用于具有利用主要包含Ni的导体进行镀敷的内引线部分IL1的引线框LF1时,对内引线部分IL1不执行表面粗糙化的方法是更为有效的。
如图17所示,在按照实施方式1的半导体器件的制造方法中的表面粗糙化步骤s102中,较为优选的是不对悬挂引线部分SL1的表面进行粗糙化,而是利用掩模带MT来覆盖它。原因在于,由于已经附接至悬挂引线部分SL1的绝缘树脂IR1没有牢固地残留于其上并且可以容易地去除,因此可以避免诸如由于在切削悬挂引线部分SL1时落入绝缘树脂IR1而引起的切削塑模损伤和杂质粒子生成等问题。因此,可以形成如图4所示的半导体器件。
按照上述,管芯焊盘DP1的顶表面f1是粗糙的。当将要与绝缘树脂IR1接触的管芯焊盘DP1的表面是粗糙的时,按照实施方式1的半导体器件的制造方式是有效的。位于半导体芯片CP1之下并且未与绝缘树脂IR1接触的部分p13可以如图18所示也具有粗糙表面,或者如图19所示不具有粗糙表面。然而,在按照实施方式1的半导体器件的制造方法中,较为优选地,当使用绝缘粘合材料作为管芯键合材料DB1时,对管芯焊盘DP1与半导体芯片CP1之下的管芯键合材料DB1相接触的部分p13进行表面粗糙化。原因在于,可能还期望粘合材料展现出与绝缘树脂IR1类似的锚固效应,以改善与具有粗糙表面的管芯焊盘DP1的粘附性。以这种方式,可以改善由绝缘粘合材料制成的管芯键合材料DB1与管芯焊盘DP1之间的粘附性,并且形成抗其剥落的结构。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有进一步改善的可靠性。
从另一个角度看,在引线框LF1与绝缘树脂IR1彼此接触之处,随着将要进行粗糙化的表面面积越大,可以实现与绝缘树脂IR1的越高的粘附性。另一方面,如上所述,存在不适于进行表面粗糙化之处,诸如多个引线部分LD1和悬挂引线部分SL1。在按照实施方式1的半导体器件的制造方法中,优选地,管芯焊盘DP1将与绝缘树脂IR1接触以及将进行表面粗糙化的部分的面积大于半导体芯片CP1与绝缘树脂IR1接触的部分的面积。下面将描述其原因。
由于随着半导体芯片CP1尺寸的增加,半导体芯片CP1经由管芯键合材料DB1与管芯焊盘DP1的粘附面积增加,这导致了剥落率的增加。换言之,半导体芯片CP1的面积越大,管芯键合材料DB1中越容易出现裂痕。如图19所示,在实施方式1的半导体器件的制造方法中,有效的是对半导体芯片CP1周围的管芯焊盘DP1的表面进行粗糙化,由此改善与绝缘树脂IR1的粘附性。这里使用的术语“半导体芯片CP1与绝缘树脂IR1相接触部分的面积”表示管芯焊盘DP1未与绝缘树脂IR1接触的顶表面f1的部分的面积。由此,通过在管芯焊盘DP1的顶表面f1上保持具有粗糙表面的部分的面积大于半导体芯片CP1的面积,可以保持与绝缘树脂IR1的粘附性,并且防止裂痕的产生。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有进一步改善的可靠性。
在按照实施方式1的半导体器件的制造方法中,如上所述,通过在模塑步骤s105中对引线框LF1将要与绝缘树脂IR1接触的部分的表面进行粗糙化,而不对管芯焊盘PF1的底表面f2或者外引线部分OL1的表面进行粗糙化,可以获得具有改善的可靠性的半导体器件。这里,不对需要镀敷的内引线部分IL1的表面或者需要切削的悬挂引线部分SL1的表面进行粗糙化是较为有效的。
(实施方式2)图20是按照实施方式2的半导体器件的剖面图。实施方式2的半导体器件具有多个引线部分LD2和管芯焊盘DP2。半导体芯片CP2利用管芯键合材料DB2键合到管芯焊盘DP2的顶表面f1。这些部件利用绝缘树脂IR2进行密封。多个引线部分LD2中每一个的利用密封树脂IR2密封的部分是内引线部分IL2,而外引线部分OL2从树脂中暴露出来。内引线部分IL2和半导体芯片CP2经由多个键合布线BW2耦合。上述配置通过内引线部分IL2和多个键合布线BWE而在外引线部分OL2与半导体芯片CP2之间提供了导电性。多个引线部分LD2和管芯焊盘DP2是最初配置相同引线框LF2的部件,并且由类似的铜材料制成。而且,实施方式2的半导体器件具有与实施方式1中描述的类似部件,这些部分未在图中示出。实施方式2的半导体器件与实施方式1的半导体器件的不同之处如下。简言之,在实施方式2的半导体器件中,利用绝缘树脂IR2对整个管芯焊盘DP2进行密封。
与实施方式1的底面暴露类型的封装相比,在实施方式2的半导体器件中采用的全塑模封装具有高防潮性,尽管其具有低热辐射属性。换言之,全塑模封装不允许轻易的潮气渗入,因为管芯焊盘DP2没有暴露在绝缘树脂IR2外部。因此,在全模式封装中,即使在管芯焊盘DP2与绝缘树脂IR2之间的边界面发生剥落,管芯键合材料DB2中也不会轻易出现由应力引起的裂痕。然而,从防止机械强度降低(否则将会由于封装裂痕而发生)的角度来看,在管芯焊盘DP2与绝缘树脂IR2之间的边界面处改善二者之间的粘附性是有效的。
而且,在实施方式2的半导体器件中,按照类似于实施方式1中采用的方式,对管芯焊盘DP2的期望部分、多个引线部分LD2以及悬挂引线部分进行表面粗糙化。如图20所示,管芯焊盘DP2将与绝缘树脂IR2接触的顶表面f1和底表面f2的部分(在此图中以粗体实线指示)进行表面粗糙化,以改善其间的粘附性。这抑制了绝缘树脂IR2中裂痕的出现。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有改善的可靠性。
而且,在实施方式2的半导体器件中,由于与上文在权利要求1中描述的类似原因,对多个引线部分LD2中的每一个的外引线部分OL2、多个引线部分LD2中的每一个的内引线部分IL2的镀敷部分(当利用Ni来镀敷时)或者悬挂引线部分不进行表面粗糙化的结构是较为优选的。类似地,当使用树脂粘合材料作为管芯键合材料DB2时,对管芯焊盘DP2在半导体芯片CP2之下的部分进行表面粗糙化的结构是较为优选的。因此,具有利用绝缘树脂封装的半导体芯片的半导体器件可以具有更为改善的可靠性。
发明人已经基于某些实施方式描述了本发明。然而,本发明不限于这些实施方式或者被这些实施方式限制,显然,在不脱离本发明范围的情况下可以进行多种修改。
Claims (2)
1.一种半导体器件,包括:
半导体芯片,具有其上布置多个焊盘电极的正表面;
管芯焊盘,具有第一主表面和与所述第一主表面相对的第二主表面,所述半导体芯片安装在所述第一主表面之上;
多个引线,分别具有内引线部分和外引线部分,并且布置在所述管芯焊盘周围;
多个布线,分别电连接到所述半导体芯片的多个焊盘电极和所述多个引线;以及
密封体,密封所述半导体芯片、所述管芯焊盘的所述第一主表面的未与所述半导体芯片重叠的部分、所述多个引线中的每个引线的所述内引线部分以及所述多个布线,
其中所述管芯焊盘的第二主表面以及所述多个引线中的每个引线的所述外引线部分从所述密封体露出,
其中在所述多个引线中的每个引线的所述内引线部分的表面的一部分上形成镀敷,所述多个布线连接至所述内引线部分,
其中所述管芯焊盘的第一主表面的粗糙度大于所述管芯焊盘的第二主表面的粗糙度、所述多个引线中的每个引线的所述内引线部分的表面的粗糙度以及所述多个引线中的每个引线的所述外引线部分的表面的粗糙度,并且
其中所述多个引线中的每个引线的所述外引线部分弯曲。
2.根据权利要求1所述的半导体器件,
其中所述外引线的正表面的粗糙度与所述外引线的背表面的粗糙度基本相同。
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