CN101595529A - 非易失性存储器软编程中的受控升压 - Google Patents
非易失性存储器软编程中的受控升压 Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
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Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/560,751 US7697338B2 (en) | 2006-11-16 | 2006-11-16 | Systems for controlled boosting in non-volatile memory soft programming |
US11/560,744 | 2006-11-16 | ||
US11/560,744 US7535763B2 (en) | 2006-11-16 | 2006-11-16 | Controlled boosting in non-volatile memory soft programming |
US11/560,751 | 2006-11-16 | ||
PCT/US2007/084463 WO2008063972A2 (en) | 2006-11-16 | 2007-11-12 | Controlled boosting in non-volatile memory soft programming |
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CN101595529A true CN101595529A (zh) | 2009-12-02 |
CN101595529B CN101595529B (zh) | 2013-02-13 |
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CN2007800423292A Expired - Fee Related CN101595529B (zh) | 2006-11-16 | 2007-11-12 | 非易失性存储器软编程中的受控升压 |
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US (1) | US7535763B2 (zh) |
CN (1) | CN101595529B (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102985977A (zh) * | 2010-05-21 | 2013-03-20 | 桑迪士克科技股份有限公司 | 用于减少非易失性存储器中的状态分布的展宽的擦除和编程技术 |
CN103035295A (zh) * | 2011-09-29 | 2013-04-10 | 赛普拉斯半导体公司 | 一个晶体管的智能写入 |
CN103680620A (zh) * | 2012-08-28 | 2014-03-26 | 飞思卡尔半导体公司 | 使用软编程的非易失性存储器(nvm) |
CN106340320A (zh) * | 2015-07-15 | 2017-01-18 | 中国科学院微电子研究所 | 一种存储器读取方法及读取系统 |
CN106531215A (zh) * | 2015-09-14 | 2017-03-22 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN106683695A (zh) * | 2015-11-06 | 2017-05-17 | 爱思开海力士有限公司 | 字线驱动器、半导体存储设备及使用它们的测试方法 |
CN109935267A (zh) * | 2017-12-19 | 2019-06-25 | 爱思开海力士有限公司 | 半导体存储器装置及其操作方法 |
CN111009275A (zh) * | 2018-10-08 | 2020-04-14 | 爱思开海力士有限公司 | 存储器装置和存储器装置的操作方法 |
CN111341368A (zh) * | 2018-12-18 | 2020-06-26 | 美光科技公司 | 使用多步阶编程脉冲对存储器单元进行编程的设备及方法 |
CN111373478A (zh) * | 2020-02-26 | 2020-07-03 | 长江存储科技有限责任公司 | 存储器件及相关存储器件的编程方法 |
CN112152594A (zh) * | 2020-10-09 | 2020-12-29 | 福建省晋华集成电路有限公司 | Efuse的烧写方法、efuse烧写电路与电子装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US7697338B2 (en) * | 2006-11-16 | 2010-04-13 | Sandisk Corporation | Systems for controlled boosting in non-volatile memory soft programming |
JP4640658B2 (ja) * | 2008-02-15 | 2011-03-02 | マイクロン テクノロジー, インク. | マルチレベル抑制スキーム |
US7796436B2 (en) * | 2008-07-03 | 2010-09-14 | Macronix International Co., Ltd. | Reading method for MLC memory and reading circuit using the same |
KR101463584B1 (ko) * | 2008-07-30 | 2014-11-19 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그것의 프로그램 방법 |
US8692310B2 (en) * | 2009-02-09 | 2014-04-08 | Spansion Llc | Gate fringing effect based channel formation for semiconductor device |
US8369149B2 (en) | 2010-09-30 | 2013-02-05 | Sandisk Technologies Inc. | Multi-step channel boosting to reduce channel to floating gate coupling in memory |
US20140198576A1 (en) * | 2013-01-16 | 2014-07-17 | Macronix International Co, Ltd. | Programming technique for reducing program disturb in stacked memory structures |
JP6179206B2 (ja) * | 2013-06-11 | 2017-08-16 | 株式会社リコー | メモリ制御装置 |
US9390808B1 (en) * | 2015-09-11 | 2016-07-12 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US9721652B2 (en) | 2015-11-17 | 2017-08-01 | Sandisk Technologies Llc | State dependent sensing for wordline interference correction |
US10381094B2 (en) | 2016-10-11 | 2019-08-13 | Macronix International Co., Ltd. | 3D memory with staged-level multibit programming |
US10832766B2 (en) * | 2018-09-28 | 2020-11-10 | Intel Corporation | Program verification time reduction in non-volatile memory devices |
KR20220015245A (ko) * | 2020-07-30 | 2022-02-08 | 삼성전자주식회사 | 프로그래밍 동안 양방향 채널 프리차지를 수행하는 비휘발성 메모리 장치 |
US11475957B2 (en) | 2021-01-14 | 2022-10-18 | Sandisk Technologies Llc | Optimized programming with a single bit per memory cell and multiple bits per memory cell |
Family Cites Families (25)
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US5745410A (en) * | 1995-11-17 | 1998-04-28 | Macronix International Co., Ltd. | Method and system for soft programming algorithm |
KR100323554B1 (ko) * | 1997-05-14 | 2002-03-08 | 니시무로 타이죠 | 불휘발성반도체메모리장치 |
US6314026B1 (en) * | 1999-02-08 | 2001-11-06 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor device using local self boost technique |
US6198662B1 (en) * | 1999-06-24 | 2001-03-06 | Amic Technology, Inc. | Circuit and method for pre-erasing/erasing flash memory array |
KR100357693B1 (ko) * | 1999-12-06 | 2002-10-25 | 삼성전자 주식회사 | 향상된 소거 알고리즘이 내장된 불휘발성 반도체 메모리장치 |
JP3810985B2 (ja) * | 2000-05-22 | 2006-08-16 | 株式会社東芝 | 不揮発性半導体メモリ |
US6252803B1 (en) * | 2000-10-23 | 2001-06-26 | Advanced Micro Devices, Inc. | Automatic program disturb with intelligent soft programming for flash cells |
KR100407572B1 (ko) * | 2001-01-10 | 2003-12-01 | 삼성전자주식회사 | 낸드형 플래쉬 메모리 장치에서의 셀 드레쉬홀드 전압의분포를 개선하는 방법 |
US6469939B1 (en) * | 2001-05-18 | 2002-10-22 | Advanced Micro Devices, Inc. | Flash memory device with increase of efficiency during an APDE (automatic program disturb after erase) process |
US6532175B1 (en) * | 2002-01-16 | 2003-03-11 | Advanced Micro Devices, In. | Method and apparatus for soft program verification in a memory device |
US6661711B2 (en) * | 2002-02-06 | 2003-12-09 | Sandisk Corporation | Implementation of an inhibit during soft programming to tighten an erase voltage distribution |
US6798694B2 (en) * | 2002-08-29 | 2004-09-28 | Micron Technology, Inc. | Method for reducing drain disturb in programming |
US6859397B2 (en) * | 2003-03-05 | 2005-02-22 | Sandisk Corporation | Source side self boosting technique for non-volatile memory |
JP3884448B2 (ja) * | 2004-05-17 | 2007-02-21 | 株式会社東芝 | 半導体記憶装置 |
US6975538B2 (en) * | 2003-10-08 | 2005-12-13 | Micron Technology, Inc. | Memory block erasing in a flash memory device |
US7023739B2 (en) * | 2003-12-05 | 2006-04-04 | Matrix Semiconductor, Inc. | NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same |
US7023733B2 (en) * | 2004-05-05 | 2006-04-04 | Sandisk Corporation | Boosting to control programming of non-volatile memory |
EP1788582B1 (en) * | 2004-08-30 | 2010-04-28 | Spansion LLc | Erasing method for nonvolatile storage, and nonvolatile storage |
US7092290B2 (en) * | 2004-11-16 | 2006-08-15 | Sandisk Corporation | High speed programming system with reduced over programming |
US7486564B2 (en) * | 2005-03-31 | 2009-02-03 | Sandisk Corporation | Soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells |
US7295478B2 (en) * | 2005-05-12 | 2007-11-13 | Sandisk Corporation | Selective application of program inhibit schemes in non-volatile memory |
US7301817B2 (en) * | 2005-10-27 | 2007-11-27 | Sandisk Corporation | Method for programming of multi-state non-volatile memory using smart verify |
US7545675B2 (en) * | 2005-12-16 | 2009-06-09 | Sandisk Corporation | Reading non-volatile storage with efficient setup |
US7355889B2 (en) * | 2005-12-19 | 2008-04-08 | Sandisk Corporation | Method for programming non-volatile memory with reduced program disturb using modified pass voltages |
US7286408B1 (en) * | 2006-05-05 | 2007-10-23 | Sandisk Corporation | Boosting methods for NAND flash memory |
-
2006
- 2006-11-16 US US11/560,744 patent/US7535763B2/en active Active
-
2007
- 2007-11-12 CN CN2007800423292A patent/CN101595529B/zh not_active Expired - Fee Related
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102985977B (zh) * | 2010-05-21 | 2016-06-29 | 桑迪士克科技股份有限公司 | 用于减少非易失性存储器中的状态分布的展宽的擦除和编程技术 |
CN102985977A (zh) * | 2010-05-21 | 2013-03-20 | 桑迪士克科技股份有限公司 | 用于减少非易失性存储器中的状态分布的展宽的擦除和编程技术 |
CN103035295A (zh) * | 2011-09-29 | 2013-04-10 | 赛普拉斯半导体公司 | 一个晶体管的智能写入 |
CN103035295B (zh) * | 2011-09-29 | 2021-02-12 | 经度快闪存储解决方案有限责任公司 | 一个晶体管的智能写入 |
CN103680620A (zh) * | 2012-08-28 | 2014-03-26 | 飞思卡尔半导体公司 | 使用软编程的非易失性存储器(nvm) |
CN103680620B (zh) * | 2012-08-28 | 2019-04-05 | 恩智浦美国有限公司 | 使用软编程的非易失性存储器(nvm) |
CN106340320B (zh) * | 2015-07-15 | 2019-06-21 | 中国科学院微电子研究所 | 一种存储器读取方法及读取系统 |
CN106340320A (zh) * | 2015-07-15 | 2017-01-18 | 中国科学院微电子研究所 | 一种存储器读取方法及读取系统 |
CN106531215A (zh) * | 2015-09-14 | 2017-03-22 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN106531215B (zh) * | 2015-09-14 | 2020-09-22 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN106683695A (zh) * | 2015-11-06 | 2017-05-17 | 爱思开海力士有限公司 | 字线驱动器、半导体存储设备及使用它们的测试方法 |
CN106683695B (zh) * | 2015-11-06 | 2021-04-30 | 爱思开海力士有限公司 | 字线驱动器、半导体存储设备及使用它们的测试方法 |
CN109935267A (zh) * | 2017-12-19 | 2019-06-25 | 爱思开海力士有限公司 | 半导体存储器装置及其操作方法 |
CN111009275A (zh) * | 2018-10-08 | 2020-04-14 | 爱思开海力士有限公司 | 存储器装置和存储器装置的操作方法 |
CN111009275B (zh) * | 2018-10-08 | 2023-09-01 | 爱思开海力士有限公司 | 存储器装置和存储器装置的操作方法 |
CN111341368A (zh) * | 2018-12-18 | 2020-06-26 | 美光科技公司 | 使用多步阶编程脉冲对存储器单元进行编程的设备及方法 |
CN111373478A (zh) * | 2020-02-26 | 2020-07-03 | 长江存储科技有限责任公司 | 存储器件及相关存储器件的编程方法 |
CN111373478B (zh) * | 2020-02-26 | 2021-03-23 | 长江存储科技有限责任公司 | 存储器件及相关存储器件的编程方法 |
US11276467B2 (en) | 2020-02-26 | 2022-03-15 | Yangtze Memory Technologies Co., Ltd. | Method of programming memory device and related memory device having a channel-stacked structure |
CN112152594A (zh) * | 2020-10-09 | 2020-12-29 | 福建省晋华集成电路有限公司 | Efuse的烧写方法、efuse烧写电路与电子装置 |
CN112152594B (zh) * | 2020-10-09 | 2022-01-21 | 福建省晋华集成电路有限公司 | Efuse的烧写方法、efuse烧写电路与电子装置 |
Also Published As
Publication number | Publication date |
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US20080117683A1 (en) | 2008-05-22 |
US7535763B2 (en) | 2009-05-19 |
CN101595529B (zh) | 2013-02-13 |
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