CN102099867A - 非易失性存储器的擦除-验证处理 - Google Patents
非易失性存储器的擦除-验证处理 Download PDFInfo
- Publication number
- CN102099867A CN102099867A CN2009801277610A CN200980127761A CN102099867A CN 102099867 A CN102099867 A CN 102099867A CN 2009801277610 A CN2009801277610 A CN 2009801277610A CN 200980127761 A CN200980127761 A CN 200980127761A CN 102099867 A CN102099867 A CN 102099867A
- Authority
- CN
- China
- Prior art keywords
- volatile memory
- memory device
- subclass
- memory cell
- word line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
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- Read Only Memory (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/132,452 | 2008-06-03 | ||
US12/132,452 US7978527B2 (en) | 2008-06-03 | 2008-06-03 | Verification process for non-volatile storage |
PCT/US2009/045358 WO2009148906A1 (en) | 2008-06-03 | 2009-05-28 | Erase-verification process for non-volatile storage |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102099867A true CN102099867A (zh) | 2011-06-15 |
CN102099867B CN102099867B (zh) | 2014-04-09 |
Family
ID=40802070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980127761.0A Active CN102099867B (zh) | 2008-06-03 | 2009-05-28 | 非易失性存储器的擦除-验证处理 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7978527B2 (zh) |
EP (1) | EP2286411B1 (zh) |
JP (1) | JP5613663B2 (zh) |
KR (1) | KR101569862B1 (zh) |
CN (1) | CN102099867B (zh) |
TW (1) | TW201011763A (zh) |
WO (1) | WO2009148906A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105340019A (zh) * | 2013-07-01 | 2016-02-17 | 桑迪士克技术有限公司 | 基于nand串电流检测编程字线 |
CN107230498A (zh) * | 2016-03-24 | 2017-10-03 | 力晶科技股份有限公司 | 非易失性半导体存储设备及其擦除方法 |
CN110767258A (zh) * | 2019-10-22 | 2020-02-07 | 江苏芯盛智能科技有限公司 | 数据擦除命令测试方法和相关装置 |
CN113821159A (zh) * | 2020-06-19 | 2021-12-21 | 西部数据技术公司 | 用于存储器装置中的高数据保留的混合擦除模式 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7978527B2 (en) * | 2008-06-03 | 2011-07-12 | Sandisk Technologies Inc. | Verification process for non-volatile storage |
US7839690B2 (en) * | 2008-12-11 | 2010-11-23 | Sandisk Corporation | Adaptive erase and soft programming for memory |
JP5530268B2 (ja) * | 2010-06-23 | 2014-06-25 | ラピスセミコンダクタ株式会社 | 不揮発性記憶装置 |
JP2012203943A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
US9436594B2 (en) * | 2011-05-27 | 2016-09-06 | Seagate Technology Llc | Write operation with immediate local destruction of old content in non-volatile memory |
US8787088B2 (en) * | 2012-06-29 | 2014-07-22 | Sandisk Technologies Inc. | Optimized erase operation for non-volatile memory with partially programmed block |
US9183945B2 (en) * | 2012-11-30 | 2015-11-10 | Sandisk Technologies Inc. | Systems and methods to avoid false verify and false read |
US9070474B2 (en) | 2013-02-14 | 2015-06-30 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US8942043B2 (en) * | 2013-03-04 | 2015-01-27 | Sandisk Technologies Inc. | Non-volatile storage with process that reduces read disturb on end wordlines |
JP2015176628A (ja) * | 2014-03-17 | 2015-10-05 | 株式会社東芝 | 半導体記憶装置及びメモリコントローラ |
KR102182804B1 (ko) * | 2014-07-29 | 2020-11-25 | 삼성전자주식회사 | 메모리 장치의 독출 방법 |
US9633737B2 (en) | 2014-11-18 | 2017-04-25 | SK Hynix Inc. | Semiconductor device |
KR20160059174A (ko) * | 2014-11-18 | 2016-05-26 | 에스케이하이닉스 주식회사 | 반도체 장치 |
US9390808B1 (en) | 2015-09-11 | 2016-07-12 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
KR102376505B1 (ko) | 2016-01-13 | 2022-03-18 | 삼성전자주식회사 | 불휘발성 메모리 장치 내 소거 불량 워드라인 검출 방법 |
WO2018076239A1 (en) | 2016-10-27 | 2018-05-03 | Micron Technology, Inc. | Erasing memory cells |
US10340017B2 (en) * | 2017-11-06 | 2019-07-02 | Macronix International Co., Ltd. | Erase-verify method for three-dimensional memories and memory system |
US11455402B2 (en) | 2019-01-30 | 2022-09-27 | Seagate Technology Llc | Non-volatile memory with precise write-once protection |
JP7273668B2 (ja) * | 2019-09-13 | 2023-05-15 | キオクシア株式会社 | 半導体記憶装置 |
KR20220104947A (ko) * | 2021-01-19 | 2022-07-26 | 에스케이하이닉스 주식회사 | 메모리 장치 |
JP2023092247A (ja) * | 2021-12-21 | 2023-07-03 | キオクシア株式会社 | メモリシステム |
US12087373B2 (en) | 2022-07-26 | 2024-09-10 | Sandisk Technologies Llc | Non-volatile memory with optimized erase verify sequence |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270979A (en) | 1991-03-15 | 1993-12-14 | Sundisk Corporation | Method for optimum erasing of EEPROM |
US6781895B1 (en) * | 1991-12-19 | 2004-08-24 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
US5963477A (en) | 1997-12-09 | 1999-10-05 | Macronix International Co., Ltd. | Flash EPROM erase algorithm with wordline level retry |
US5995417A (en) | 1998-10-20 | 1999-11-30 | Advanced Micro Devices, Inc. | Scheme for page erase and erase verify in a non-volatile memory array |
US6620682B1 (en) | 2001-02-27 | 2003-09-16 | Aplus Flash Technology, Inc. | Set of three level concurrent word line bias conditions for a nor type flash memory array |
US6549467B2 (en) | 2001-03-09 | 2003-04-15 | Micron Technology, Inc. | Non-volatile memory device with erase address register |
JP3866650B2 (ja) | 2002-11-29 | 2007-01-10 | 株式会社東芝 | 不揮発性半導体記憶装置及びその消去ベリファイ方法 |
JP4220319B2 (ja) | 2003-07-04 | 2009-02-04 | 株式会社東芝 | 不揮発性半導体記憶装置およびそのサブブロック消去方法 |
US7009889B2 (en) | 2004-05-28 | 2006-03-07 | Sandisk Corporation | Comprehensive erase verification for non-volatile memory |
US7272050B2 (en) * | 2004-08-10 | 2007-09-18 | Samsung Electronics Co., Ltd. | Non-volatile memory device and erase method of the same |
KR100632950B1 (ko) | 2004-08-10 | 2006-10-11 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것의 소거 방법 |
US7450433B2 (en) | 2004-12-29 | 2008-11-11 | Sandisk Corporation | Word line compensation in non-volatile memory erase operations |
US7403428B2 (en) | 2005-03-31 | 2008-07-22 | Sandisk Corporation | Systems for erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cells |
US7301817B2 (en) * | 2005-10-27 | 2007-11-27 | Sandisk Corporation | Method for programming of multi-state non-volatile memory using smart verify |
US7483311B2 (en) | 2006-02-07 | 2009-01-27 | Micron Technology, Inc. | Erase operation in a flash memory device |
US7760552B2 (en) | 2006-03-31 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Verification method for nonvolatile semiconductor memory device |
US7564718B2 (en) * | 2006-04-12 | 2009-07-21 | Infineon Technologies Flash Gmbh & Co. Kg | Method for programming a block of memory cells, non-volatile memory device and memory card device |
TWI335596B (en) | 2006-06-02 | 2011-01-01 | Sandisk Corp | Method and system for data pattern sensitivity compensation using different voltage |
US7495954B2 (en) | 2006-10-13 | 2009-02-24 | Sandisk Corporation | Method for partitioned erase and erase verification to compensate for capacitive coupling effects in non-volatile memory |
US7545681B2 (en) * | 2006-11-27 | 2009-06-09 | Sandisk Corporation | Segmented bitscan for verification of programming |
JP2009252278A (ja) | 2008-04-04 | 2009-10-29 | Toshiba Corp | 不揮発性半導体記憶装置及びメモリシステム |
US7978527B2 (en) * | 2008-06-03 | 2011-07-12 | Sandisk Technologies Inc. | Verification process for non-volatile storage |
-
2008
- 2008-06-03 US US12/132,452 patent/US7978527B2/en active Active
-
2009
- 2009-05-28 JP JP2011512531A patent/JP5613663B2/ja not_active Expired - Fee Related
- 2009-05-28 CN CN200980127761.0A patent/CN102099867B/zh active Active
- 2009-05-28 KR KR1020107029662A patent/KR101569862B1/ko active IP Right Grant
- 2009-05-28 EP EP09759067A patent/EP2286411B1/en active Active
- 2009-05-28 WO PCT/US2009/045358 patent/WO2009148906A1/en active Application Filing
- 2009-06-03 TW TW098118419A patent/TW201011763A/zh unknown
-
2011
- 2011-06-07 US US13/154,810 patent/US8218367B2/en not_active Ceased
-
2014
- 2014-05-29 US US14/290,905 patent/USRE46264E1/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105340019A (zh) * | 2013-07-01 | 2016-02-17 | 桑迪士克技术有限公司 | 基于nand串电流检测编程字线 |
CN105340019B (zh) * | 2013-07-01 | 2018-05-08 | 桑迪士克科技有限责任公司 | 基于nand串电流检测编程字线 |
CN107230498A (zh) * | 2016-03-24 | 2017-10-03 | 力晶科技股份有限公司 | 非易失性半导体存储设备及其擦除方法 |
CN107230498B (zh) * | 2016-03-24 | 2020-11-10 | 力晶积成电子制造股份有限公司 | 非易失性半导体存储设备及其擦除方法 |
CN110767258A (zh) * | 2019-10-22 | 2020-02-07 | 江苏芯盛智能科技有限公司 | 数据擦除命令测试方法和相关装置 |
CN113821159A (zh) * | 2020-06-19 | 2021-12-21 | 西部数据技术公司 | 用于存储器装置中的高数据保留的混合擦除模式 |
Also Published As
Publication number | Publication date |
---|---|
US7978527B2 (en) | 2011-07-12 |
US20110235423A1 (en) | 2011-09-29 |
US8218367B2 (en) | 2012-07-10 |
WO2009148906A1 (en) | 2009-12-10 |
TW201011763A (en) | 2010-03-16 |
EP2286411B1 (en) | 2012-09-19 |
KR101569862B1 (ko) | 2015-11-17 |
JP5613663B2 (ja) | 2014-10-29 |
CN102099867B (zh) | 2014-04-09 |
USRE46264E1 (en) | 2017-01-03 |
US20090296475A1 (en) | 2009-12-03 |
JP2011522351A (ja) | 2011-07-28 |
KR20110037986A (ko) | 2011-04-13 |
EP2286411A1 (en) | 2011-02-23 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120625 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20120625 Address after: The United States of America Texas Applicant after: Sandisk Corp. Address before: American California Applicant before: Sandisk Corp. |
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C14 | Grant of patent or utility model | ||
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CP01 | Change in the name or title of a patent holder |
Address after: texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: texas Patentee before: Sandisk Corp. |