CN101213614A - 使用个别验证擦除非易失性存储器和额外擦除存储器单元的子组 - Google Patents
使用个别验证擦除非易失性存储器和额外擦除存储器单元的子组 Download PDFInfo
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- CN101213614A CN101213614A CNA2006800099379A CN200680009937A CN101213614A CN 101213614 A CN101213614 A CN 101213614A CN A2006800099379 A CNA2006800099379 A CN A2006800099379A CN 200680009937 A CN200680009937 A CN 200680009937A CN 101213614 A CN101213614 A CN 101213614A
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- volatile memory
- memory device
- erasing voltage
- son
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/345—Circuits or methods to detect overerased nonvolatile memory cells, usually during erasure verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3472—Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Storage Device Security (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (36)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66704305P | 2005-03-31 | 2005-03-31 | |
US60/667,043 | 2005-03-31 | ||
US11/296,028 US7400537B2 (en) | 2005-03-31 | 2005-12-06 | Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells |
US11/296,055 US7403424B2 (en) | 2005-03-31 | 2005-12-06 | Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells |
US11/296,055 | 2005-12-06 | ||
US11/296,028 | 2005-12-06 | ||
PCT/US2006/011340 WO2006105120A1 (en) | 2005-03-31 | 2006-03-29 | Erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101213614A true CN101213614A (zh) | 2008-07-02 |
CN101213614B CN101213614B (zh) | 2012-05-16 |
Family
ID=36615715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800099379A Active CN101213614B (zh) | 2005-03-31 | 2006-03-29 | 擦除非易失性存储器的方法和装置 |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1864293B1 (zh) |
JP (1) | JP4796125B2 (zh) |
KR (1) | KR100921014B1 (zh) |
CN (1) | CN101213614B (zh) |
AT (1) | ATE476740T1 (zh) |
DE (1) | DE602006015930D1 (zh) |
TW (1) | TWI306606B (zh) |
WO (1) | WO2006105120A1 (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102292775A (zh) * | 2008-12-11 | 2011-12-21 | 桑迪士克公司 | 存储器的适应性擦除和软编程 |
CN102376367A (zh) * | 2010-08-10 | 2012-03-14 | 旺宏电子股份有限公司 | 于一存储集成电路上进行擦除操作的方法与装置 |
CN102651236A (zh) * | 2011-02-28 | 2012-08-29 | 海力士半导体有限公司 | 存储装置和控制存储装置的擦除操作的方法 |
CN106326780A (zh) * | 2016-08-18 | 2017-01-11 | 佛山中科芯蔚科技有限公司 | 一种物理芯片指纹生成方法及系统 |
CN106448734A (zh) * | 2015-08-12 | 2017-02-22 | 华邦电子股份有限公司 | 非挥发性半导体储存装置及其擦除方法 |
CN106971754A (zh) * | 2015-11-02 | 2017-07-21 | 三星电子株式会社 | 非易失性存储器设备、包括其的存储装置和操作其的方法 |
CN107507645A (zh) * | 2017-07-28 | 2017-12-22 | 东芯半导体有限公司 | 一种避免数据擦除出错的闪存装置 |
CN110660441A (zh) * | 2018-06-29 | 2020-01-07 | 美光科技公司 | 存储器装置中多个块的擦除 |
CN111913653A (zh) * | 2019-05-10 | 2020-11-10 | 旺宏电子股份有限公司 | 存储器系统、存储器控制器以及存储器控制方法 |
CN113409872A (zh) * | 2021-06-30 | 2021-09-17 | 芯天下技术股份有限公司 | 一种抑制闪存过擦除的方法、装置、电子设备及存储介质 |
CN113448496A (zh) * | 2020-03-25 | 2021-09-28 | 旺宏电子股份有限公司 | 多层次三维存储器的擦除方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7499338B2 (en) * | 2006-10-13 | 2009-03-03 | Sandisk Corporation | Partitioned soft programming in non-volatile memory |
WO2008048798A1 (en) * | 2006-10-13 | 2008-04-24 | Sandisk Corporation | Partitioned erase and erase verification in non-volatile memory |
KR100908562B1 (ko) | 2007-11-29 | 2009-07-21 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 소거 방법 |
KR100954946B1 (ko) * | 2008-05-20 | 2010-04-27 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 소거 방법 |
KR100953063B1 (ko) | 2008-05-23 | 2010-04-14 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치의 소거 방법 |
JP5259666B2 (ja) | 2010-09-22 | 2013-08-07 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8488382B1 (en) * | 2011-12-21 | 2013-07-16 | Sandisk Technologies Inc. | Erase inhibit for 3D non-volatile memory |
US9019775B2 (en) | 2012-04-18 | 2015-04-28 | Sandisk Technologies Inc. | Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current |
US8787094B2 (en) * | 2012-04-18 | 2014-07-22 | Sandisk Technologies Inc. | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits |
KR102218735B1 (ko) | 2014-01-21 | 2021-02-23 | 삼성전자주식회사 | 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 소거 방법 |
KR102384959B1 (ko) * | 2015-10-30 | 2022-04-11 | 에스케이하이닉스 주식회사 | 저장 장치, 이를 포함하는 메모리 시스템 및 이의 동작 방법 |
KR102643658B1 (ko) * | 2016-11-10 | 2024-03-07 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 동작 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08306196A (ja) * | 1995-04-28 | 1996-11-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
JPH09320282A (ja) * | 1996-05-27 | 1997-12-12 | Sharp Corp | 不揮発性半導体記憶装置の消去制御方法 |
JP2000236031A (ja) * | 1999-02-16 | 2000-08-29 | Toshiba Corp | 不揮発性半導体記憶装置 |
US6381174B1 (en) * | 2001-03-12 | 2002-04-30 | Micron Technology, Inc. | Non-volatile memory device with redundant columns |
JP2003178590A (ja) * | 2001-12-11 | 2003-06-27 | Toshiba Corp | 不揮発性半導体記憶装置 |
US6891752B1 (en) * | 2002-07-31 | 2005-05-10 | Advanced Micro Devices | System and method for erase voltage control during multiple sector erase of a flash memory device |
JP4005895B2 (ja) * | 2002-09-30 | 2007-11-14 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
-
2006
- 2006-03-29 JP JP2008504263A patent/JP4796125B2/ja not_active Expired - Fee Related
- 2006-03-29 DE DE602006015930T patent/DE602006015930D1/de active Active
- 2006-03-29 CN CN2006800099379A patent/CN101213614B/zh active Active
- 2006-03-29 EP EP06739859A patent/EP1864293B1/en active Active
- 2006-03-29 AT AT06739859T patent/ATE476740T1/de not_active IP Right Cessation
- 2006-03-29 KR KR1020077022606A patent/KR100921014B1/ko active IP Right Grant
- 2006-03-29 WO PCT/US2006/011340 patent/WO2006105120A1/en active Application Filing
- 2006-03-31 TW TW095111547A patent/TWI306606B/zh not_active IP Right Cessation
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102292775A (zh) * | 2008-12-11 | 2011-12-21 | 桑迪士克公司 | 存储器的适应性擦除和软编程 |
CN102292775B (zh) * | 2008-12-11 | 2014-05-21 | 桑迪士克科技股份有限公司 | 存储器的适应性擦除和软编程 |
CN102376367A (zh) * | 2010-08-10 | 2012-03-14 | 旺宏电子股份有限公司 | 于一存储集成电路上进行擦除操作的方法与装置 |
CN102376367B (zh) * | 2010-08-10 | 2015-05-27 | 旺宏电子股份有限公司 | 于一存储集成电路上进行擦除操作的方法与装置 |
CN102651236A (zh) * | 2011-02-28 | 2012-08-29 | 海力士半导体有限公司 | 存储装置和控制存储装置的擦除操作的方法 |
CN102651236B (zh) * | 2011-02-28 | 2016-08-03 | 海力士半导体有限公司 | 存储装置和控制存储装置的擦除操作的方法 |
CN106448734B (zh) * | 2015-08-12 | 2019-08-09 | 华邦电子股份有限公司 | 非挥发性半导体储存装置及其擦除方法 |
CN106448734A (zh) * | 2015-08-12 | 2017-02-22 | 华邦电子股份有限公司 | 非挥发性半导体储存装置及其擦除方法 |
CN106971754A (zh) * | 2015-11-02 | 2017-07-21 | 三星电子株式会社 | 非易失性存储器设备、包括其的存储装置和操作其的方法 |
CN106326780B (zh) * | 2016-08-18 | 2019-05-17 | 佛山中科芯蔚科技有限公司 | 一种物理芯片指纹生成方法及系统 |
CN106326780A (zh) * | 2016-08-18 | 2017-01-11 | 佛山中科芯蔚科技有限公司 | 一种物理芯片指纹生成方法及系统 |
CN107507645A (zh) * | 2017-07-28 | 2017-12-22 | 东芯半导体有限公司 | 一种避免数据擦除出错的闪存装置 |
CN110660441A (zh) * | 2018-06-29 | 2020-01-07 | 美光科技公司 | 存储器装置中多个块的擦除 |
US11567688B2 (en) | 2018-06-29 | 2023-01-31 | Micron Technology, Inc. | Erasure of multiple blocks in memory devices |
CN111913653A (zh) * | 2019-05-10 | 2020-11-10 | 旺宏电子股份有限公司 | 存储器系统、存储器控制器以及存储器控制方法 |
CN113448496A (zh) * | 2020-03-25 | 2021-09-28 | 旺宏电子股份有限公司 | 多层次三维存储器的擦除方法 |
CN113448496B (zh) * | 2020-03-25 | 2024-05-28 | 旺宏电子股份有限公司 | 多层次三维存储器的擦除方法 |
CN113409872A (zh) * | 2021-06-30 | 2021-09-17 | 芯天下技术股份有限公司 | 一种抑制闪存过擦除的方法、装置、电子设备及存储介质 |
CN113409872B (zh) * | 2021-06-30 | 2024-03-12 | 芯天下技术股份有限公司 | 一种抑制闪存过擦除的方法、装置、电子设备及存储介质 |
Also Published As
Publication number | Publication date |
---|---|
JP2008536247A (ja) | 2008-09-04 |
EP1864293B1 (en) | 2010-08-04 |
KR100921014B1 (ko) | 2009-10-09 |
WO2006105120A1 (en) | 2006-10-05 |
EP1864293A1 (en) | 2007-12-12 |
KR20080007553A (ko) | 2008-01-22 |
TWI306606B (en) | 2009-02-21 |
DE602006015930D1 (de) | 2010-09-16 |
TW200703342A (en) | 2007-01-16 |
CN101213614B (zh) | 2012-05-16 |
ATE476740T1 (de) | 2010-08-15 |
JP4796125B2 (ja) | 2011-10-19 |
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