CN101584259B - 层叠体、基板的制造方法、基板及半导体装置 - Google Patents
层叠体、基板的制造方法、基板及半导体装置 Download PDFInfo
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- CN101584259B CN101584259B CN2008800024672A CN200880002467A CN101584259B CN 101584259 B CN101584259 B CN 101584259B CN 2008800024672 A CN2008800024672 A CN 2008800024672A CN 200880002467 A CN200880002467 A CN 200880002467A CN 101584259 B CN101584259 B CN 101584259B
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Abstract
本发明提供一种层叠体(10),其具有树脂层(2)和金属层(3),该树脂层(2)内置有用纤维基材构成的芯部(1),该金属层(3)在上述树脂层的一个表面上接合,其中,上述纤维基材的厚度在25μm以下,上述金属层具有对应于在上述树脂层上形成的导通孔的开口部(31)。本发明还提供一种基板的制造方法,其包括用激光(9)照射上述的层叠体在上述树脂层上形成导通孔(23)的工序、在上述导通孔形成后从上述层叠体除去上述金属层的工序。本发明还提供一种基板(100),其通过上述制造方法制得。本发明还提供一种半导体装置(12),其是在上述的基板上搭载半导体元件(121)而成。
Description
技术领域
本发明涉及一种层叠体、基板的制造方法、基板及半导体装置。
背景技术
近年来,随着对电子器件的小型化、高速化的需求,多层印刷布线板的高度密度安装和高密度布线不断发展,要求图案的微细化及通孔的小径化。为了与这些要求相对应,已在采用通过积层方式获得的多层印刷布线板。
作为该积层方式获得的多层印刷布线板的芯层的内层板,多采用使用玻璃纤维基材的刚性的两表面板或多层板。作为绝缘树脂层的积层,通过涂布树脂的方式、层叠膜状的树脂的方式、层叠带树脂铜箔的方式等形成。
该情形下,通常,在积层的绝缘树脂层中没有内置纤维基材。但是,该结构的积层方式获得的多层印刷布线板,具有如下述的缺点。没有内置纤维基材的积层,容易产生树脂裂纹。进一步地,在受到热冲击时,由于树脂的热伸缩,易产生树脂裂纹。
因此,考虑内置有纤维基材的积层。但是,在内置有纤维基材的积层中,在激光加工导通孔时,在基材表面或孔壁表面上产生胶渣(smear),因此产生电路欠损。因此,为了改善内置纤维基材的积层的激光加工性,提出了使用有机基材作为基材的方法(例如,参照专利文献1:JP特开平11-330707号公报)。
但是,在该使用有机基材的方法中,作为基材的刚性低,有时难以薄型化。
发明内容
为了改善上述问题,本发明人等成功开发了使用非常薄的玻璃纤维基材的积层,能够一定程度地提高激光加工性的改善的效果。但是,即使使用薄的玻璃纤维基材也未能完全抑制胶渣(smear)的发生。本发明的目的是,充分抑制激光加工使用25μm以下的纤维基材的树脂层时的胶渣(smear)的发生,进一步提高激光加工性。
上述目的,是通过下述的(1)~(13)中记载的本发明而达成。
(1)一种层叠体,其具有树脂层和金属层,该树脂层内置有用纤维基材构成的芯部,该金属层在上述树脂层的至少一个表面上接合,其特征在于,上述纤维基材的厚度在25μm以下,上述金属层具有对应于在上述树脂层上形成的导通孔的开口部。
(2)如上述(1)所述的层叠体,其中,上述纤维基材是玻璃纤维基材。
(3)如上述(1)所述的层叠体,其中,构成上述金属层的金属是铜和铜系合金中至少一者。
(4)如上述(1)所述的层叠体,其中,上述树脂层是由含有氰酸酯树脂的树脂组合物构成。
(5)如上述(1)所述的层叠体,其中,相对于上述树脂层的厚度方向,上述纤维基材偏置设置。
(6)如上述(5)所述的层叠体,其中,上述树脂层具有在用上述纤维基材构成的芯部的一侧表面上形成的第一树脂层及在另一侧表面上形成的第二树脂层,上述第一树脂层的厚度是5~15μm,上述第二树脂层的厚度是15~50μm。
(7)如上述(6)所述的层叠体,其中,构成上述第一树脂层的第一树脂组合物与构成上述第二树脂层的第二树脂组合物不相同。
(8)一种基板的制造方法,其特征在于,包括:用激光照射上述(1)所述的层叠体,从而在上述树脂层上形成导通孔的工序;
在上述导通孔形成后从上述层叠体除去上述金属层的工序。
(9)如上述(8)所述的基板的制造方法,其中,上述导通孔的开口直径为:在上述金属层侧是55~85μm、在上述金属层的相反一侧是35~65μm。
(10)一种基板,其特征在于,通过上述(8)所述的制造方法制得。
(11)一种基板,其具有芯基板、在该芯基板的至少一侧表面上形成的电路布线部和在该电路布线部上设置的树脂层,其特征在于,上述树脂层具有用纤维基材构成的芯部、该芯部的一侧表面上形成的第一树脂层和在上述芯部的另一侧表面上形成的第二树脂层,上述纤维基材的厚度为25μm以下,并且设置成使上述电路布线部在上述第二树脂层的一部分中填埋。
(12)如上述(11)所述的基板,其中,当将上述第一树脂层的厚度设为B2[μm]、上述第二树脂层的厚度设为B1[μm]、上述电路布线部的厚度设为t1[μm]且其残铜率设为S[%]、从上述电路布线部的上述第二树脂层侧的端面至上述芯部的上述第二树脂层的厚度设为t2[μm]时,
满足B2<B1并且B1=t2+t1×(1-S/100)。
(13)一种半导体装置,其特征在于,其是在上述(10)所述的基板上搭载半导体元件而成。
附图说明
图1是表示层叠体的一个实例的剖面图。
图2是表示层叠体的一个实例的剖面图。
图3是示意性地表示在电路布线中填埋入树脂层的状态的剖面图。
图4是表示制造树脂层的工序的示意图。
图5是表示制造层叠体的工序的示意图。
图6是表示制造层叠体的工序的示意图。
图7是表示制造基板的工序的示意图。
图8是表示制造基板的工序的示意图。
图9是表示半导体装置的一个实例的剖面图。
具体实施方式
下面,对于本发明的层叠体、基板的制造方法、基板及半导体装置进行说明。
本发明的层叠体,其具有树脂层和金属层,该树脂层内置有用纤维基材构成的芯部,该金属层在上述树脂层的一个表面上接合,其特征在于,上述纤维基材的厚度在25μm以下,上述金属层具有对应于在上述树脂层上形成的导通孔的开口部。
本发明的基板的制造方法,其特征在于,包括:用激光照射上述记载的层叠体在上述树脂层上形成导通孔的工序;在上述导通孔形成后从上述层叠体除去上述金属层的工序。
本发明的基板,其特征在于,通过上述记载的制造方法制得。
本发明的半导体装置,其特征在于,其是在上述记载的基板上搭载半导体元件而成。
(层叠体)
首先,对层叠体进行说明。
如图1所示,层叠体10,具有内置有由纤维基材构成的芯部1的树脂层2和在树脂层2的单表面上接合的金属层3。
树脂层2,由在芯部1的一侧表面上形成的第一树脂层21和在另一侧表面上形成的第二树脂层22构成。
金属层3,与第一树脂层21相邻接的接合。
另外,在金属层3上,形成有对应于后续在树脂层2上形成导通孔的开口部31。
(芯部)
芯部的特征在于,构成芯部1的纤维基材的厚度是25μm以下。由此,能够提高激光加工性,而且能够使树脂层2变薄。
另外,使用厚度是25μm以下的纤维基材作为树脂层2的芯部1是困难的。本发明中,通过后述的方法,能够在即使厚度是25μm以下的纤维基材的情形也可在树脂层2的芯部1上内置,由此,解决产生的新的课题。
作为上述纤维基材,例如,可举出玻璃布和玻璃无纺布等的玻璃纤维基材;以聚酰胺类树脂纤维(聚酰胺树脂纤维、芳香族聚酰胺树脂纤维和全芳香族聚酰胺树脂纤维等)、聚酯类树脂纤维(聚酯树脂纤维、芳香族聚酯树脂纤维和全芳香族聚酯树脂纤维等)、聚酰亚胺树脂纤维和氟树脂纤维等作为主要成分的织布或无纺布构成的合成纤维基材;和牛皮纸(craft paper)、棉短绒纸和棉短绒(linter)与牛皮纸浆料(craft pulp)的混抄纸等作为主要成分的纸基材等。其中,优选玻璃纤维基材。由此,能够使树脂层2的刚性优异,且能够使树脂层2变薄。进一步地,也能够降低树脂层2的热膨胀系数,由此,能够降低使用树脂层2制造的基板的翘曲的发生。
作为构成该玻璃纤维基材的的玻璃,例如,可举出E玻璃、C玻璃、A玻璃、S玻璃、D玻璃、NE玻璃、T玻璃、H玻璃等。其中,优选T玻璃。由此,能够降低玻璃纤维基材的热膨胀系数,因此,能够降低树脂层2的热膨胀系数。
上述纤维基材的厚度,是25μm以下,更优选是3~20μm,特别优选为10~18μm。厚度在上述范围内,则树脂层2的刚性与激光加工性的平衡性优异。
芯部1的位置,没有特别限定,优选相对于树脂层2的厚度方向偏置设置。由此,能够相应于电路图案调整树脂量。进一步地,通过调整最合适的的树脂量也能够使厚度变薄。
在此,通过图2,说明芯部1相对于树脂层2的厚度方向偏置设置的状态。图2(a)及(b)是示意性地表示芯部1相对于树脂层2偏置设置的状态的剖面图。如图2的(a)及(b)所示,是指相对于树脂层2的厚度方向的中心线A-A,芯部1的中心偏离该中心而进行设置。图2(a)是设置成芯部1的下侧(图2中下侧)的表面与树脂层2的下侧(图2中下侧)的表面几乎一致。图2(b)是设置成芯部1在中心性A-A与树脂层2的下侧(图2中下侧)的表面之间。另外,也可设置成芯部1与中心线A-A有一部分重合。例如,使纤维基材在树脂层2的上侧偏置,则能够以能够降低对于树脂层2的下侧设置的金属层的冲击的强度进行加工,能够提高激光加工性。
(树脂层)
芯部1,在树脂层2内内置。该树脂层2,例如,优选是由含有热固性树脂的树脂组合物构成。由此,能够提高耐热性。
作为热固性树脂,例如,可举出,苯酚酚醛清漆树脂、甲酚酚醛清漆树脂、双酚A酚醛清漆树脂等的酚醛清漆型酚醛树脂;未改性的甲阶酚醛树脂、油改性甲阶酚醛树脂(桐油、亚麻仁油、核桃油等改性)等的甲阶型酚醛树脂等的酚醛树脂;双酚A环氧树脂、双酚F环氧树脂等的双酚型环氧树脂;酚醛清漆环氧树脂和甲酚酚醛清漆环氧树脂等的酚醛清漆型环氧树脂;联苯型环氧树脂等的环氧树脂;尿素树脂、三聚氰胺树脂等含有三嗪环的树脂;不饱和聚酯树脂、双马来酰亚胺树脂、聚氨酯树脂、邻苯二甲酸二烯丙基酯树脂、硅酮树脂、具有苯并恶唑环的树脂、氰酸酯树脂等。
其中,特别优选氰酸酯树脂(包括氰酸酯树脂的预聚物)。由此,能够降低树脂层2的热膨胀系数。进一步地,也能使树脂层2的电气特性(低介电率、低介电正切)等优异。
上述氰酸酯树脂,例如,可通过使卤化氰化合物与酚类反应,然后,根据需要,通过加热等方法进行预聚合而获得。具体地,可举出,酚醛清漆型氰酸酯树脂和双酚A型氰酸酯树脂、双酚E型氰酸酯树脂和四甲基双酚F型氰酸酯树脂等的双酚型氰酸酯树脂等。其中,优选酚醛清漆型氰酸酯树脂。由此,由于交联密度增加使得耐热性得到改善,且树脂组合物等的阻燃性也得到提高。这是因为,酚醛清漆型氰酸酯树脂,固化后形成三嗪环。此外,还因为,酚醛清漆型氰酸酯树脂,结构中的苯环比例高而易于碳化。进一步地,即使在使树脂层2薄膜化(厚度为35μm以下)的情形,也能够赋予树脂层2优异的刚性。特别是,由于加热时的刚性优异,半导体元件安装时的可靠性也特别优异。
作为上述的酚醛清漆型氰酸酯树脂,例如,可使用由下式(I)表示的酚醛清漆型氰酸酯树脂:
(n为任意的整数)
上式(I)表示的酚醛清漆型氰酸酯树脂的平均重复单元数n,没有特别限定,优选为1-10,特别优选为2-7。如果平均重复单元数n低于上述下限值,则酚醛清漆型氰酸酯树脂易结晶,对通用溶剂的溶解性较低,有时难以操作。另外,如果平均重复单元数n大于上述上限值,则有时熔融粘度会变得过高而导致树脂层2的成型性降低。
上述氰酸酯树脂的重均分子量,没有特别限定,优选为500~4500,更优选为600~3000。如果重均分子量低于上述下限值,则有时在制作树脂层2时会产生横褶,树脂层2之间接触时会互相粘结,或导致树脂被转印。此外,如果重均分子量大于上述上限值,则有时固化反应进行得太快,形成基板(特别是电路基板)时,会出现成型缺陷,或降低层间剥离强度。
上述氰酸酯树脂等的重均分子量,例如,可通过GPC(凝胶渗透色谱法)测定。
GPC测定,例如,可采用装置:东ソ一制造的HLC-8200GPC,色谱柱采用TSK=GEL聚苯乙烯,溶剂采用THF(四氢呋喃),进行测定。
上述热固性树脂的含量,没有特别限定,优选为树脂组合物总量的5~50重量%,特别优选为20~40重量%。含量低于上述下限值,则有时难以形成树脂层2,含量超过上述上限值,则有时会降低树脂层2的强度。
上述树脂组合物,优选含有无机填料。由此,能够使即使在使树脂层2薄膜化(厚度35μm以下)时也能够强度优异。进一步地,也能够提高树脂层2的低热膨胀化。
作为上述无机填料,例如,可举出,滑石、氧化铝、玻璃、石英、云母、氢氧化铝、氢氧化镁等。其中,优选石英,从低热膨胀性优异方面考虑,优选熔融石英(特别是球状熔融石英)。其形状有破碎状、球状,可采用适合其目的(为了确保对纤维基材的浸渍性而使树脂组合物的熔融粘度降低从而使用球状石英等)的使用方法。
上述无机填料的平均粒径,没有特别限定,优选为0.01μm~5.0μm,更优选0.2μm~2.0μm。无机填料的粒径,低于上述下限值,则清漆的粘度变高,因此,有时会影响制造树脂层2时的作业性。另一方面,超过上述上限值,则有时会引起清漆中无机填料的沉降等的现象。
该平均粒径,例如,可通过粒度分布计(LA-500,HORIBA制造)来测定。
进一步地,优选平均粒径为5.0μm以下的球状石英(特别是球状熔融石英),特别优选平均粒径为0.01~2.0μm的球状熔融石英。由此,能够提高无机填充剂的填充性。
上述无机填料的含量,没有特别的限定,优选为树脂组合物总量的20~70重量%,进一步优选为30~50重量%。含量在上述范围内,则能够使树脂层2特别是具有低热膨胀性、低吸水性。
作为上述热固性树脂使用氰酸酯树脂(特别是酚醛清漆型氰酸酯树脂)时,优选并用环氧树脂(实质上不含卤原子)。作为上述环氧树脂,可举出,例如,苯酚酚醛清漆型环氧树脂、双酚型环氧树脂、萘型环氧树脂、芳基亚烷基型环氧树脂等。其中,特别优选芳基亚烷基型环氧树脂。由此,能够提高树脂层2的吸湿焊锡耐热性和阻燃性。
上述芳基亚烷基型环氧树脂,是指重复单元中具有至少一个芳基亚烷基的环氧树脂。例如,可举出苯二甲基型环氧树脂和联苯基二亚甲基型环氧树脂等。其中,优选联苯基二亚甲基型环氧树脂。联苯基二亚甲基型环氧树脂,例如,可由式(II)表示。
(n为任意的整数)
上述式(II)表示的联苯基二亚甲基型环氧树脂的平均重复单元数n,没有特别限定,优选为1~10,特别优选为2~5。平均重复单元数n低于上述下限值,则联苯基二亚甲基型环氧树脂易于结晶,相对于通用溶剂的溶解性比较低,有时操作困难。另外,平均重复单元数n超过上述上限值,则树脂的流动性降低,有时会成为发生成型不良等的原因。
上述环氧树脂的含量,没有特别限定,优选为上述树脂组合物总量的1~55重量%,特别优选为5~40重量%。含量低于上述下限值,则氰酸酯树脂的反应性降低,得到的产品的耐湿性降低,超过上述上限值,则有时耐热性会降低。
上述环氧树脂的重均分子量,没有特别限定,重均分子量优选为500~20000,特别优选为800~15000。重均分子量低于上述下限值,则有时在树脂层2上产生横褶,超过上述上限值,则在制造树脂层2时,有时对基材的含浸性降低,难以得到均匀的制品。
上述环氧树脂的重均分子量,例如,可通过GPC(凝胶渗透色谱法)测定。
GPC测定,例如,可采用装置:东ソ一制造的HLC-8200GPC,色谱柱采用TSK=GEL聚苯乙烯,溶剂采用THF(四氢呋喃),进行测定。
作为上述热固性树脂使用氰酸酯树脂(特别是酚醛清漆型氰酸酯树脂)时,优选并用酚醛树脂。作为上述酚醛树脂,例如,可举出,酚醛清漆型酚醛树脂、甲阶型酚醛树脂和芳基亚烷基型酚醛树脂等。其中,优选芳基亚烷基型酚醛树脂。由此,能够进一步提高吸湿焊锡耐热性。
作为上述芳基亚烷基型酚醛树脂,例如,可举出苯二甲基型酚醛树脂和联苯基二亚甲基型酚醛树脂等。联苯基二亚甲基型酚醛树脂,例如,可由式(III)表示。
(n为任意的整数)
上述式(III)表示的联苯基二亚甲基型酚醛树脂的平均重复单元数n,没有特别限定,优选为1~12,特别优选为2~8。如果平均重复单元数n低于上述下限值,则有时耐热性会降低。此外,如果平均重复单元数n超过上述上限值,则有时其与其它树脂的相容性会降低而导致作业性降低。
通过上述的氰酸酯树脂(特别是酚醛清漆型氰酸酯树脂)和芳基亚烷基型酚醛树脂的组合,能够控制交联密度并且提高金属与树脂的密接性。
上述酚醛树脂的含量,没有特别限定,优选为树脂组合物总量的1~55重量%,更优选为5~40重量%。如果含量低于上述下限值,则有时耐热性会降低,如果含量超过上述上限值,则有时低热膨胀性会受损。
上述酚醛树脂的重均分子量,没有特别限定,优选为400~18000,更优选为500~15000。如果重均分子量低于上述下限值,则有时会在树脂层2上产生横褶,如果重均分子量超出上述上限值,则制造树脂层2时,对纤维基材的含浸性降低,有时不能得到均匀的制品。
上述酚醛树脂的重均分子量,例如,可通过GPC测定。
此外,通过组合上述氰酸酯树脂(特别是酚醛清漆型氰酸酯树脂)、上述酚醛树脂(芳基亚烷基型酚醛树脂,特别是联苯基二亚甲基型酚醛树脂)和上述环氧树脂(芳基亚烷基型环氧树脂,特别是联苯基二亚甲基型环氧树脂)制备基板(特别是电路基板)时,可获得特别优异的尺寸稳定性。
上述树脂组合物,没有特别限定,优选使用偶联剂。该偶联剂,能够提高上述热固性树脂和上述无机填料界面处的润湿性,由此,能够使热固性树脂等和无机填料得以均匀地连接到纤维基材,从而提高耐热性,特别是吸湿后的焊锡耐热性。
作为上述偶联剂,可以使用任何常规的偶联剂,具体地,优选使用选自环氧硅烷偶联剂、阳离子硅烷偶联剂、氨基硅烷偶联剂、钛酸酯类偶联剂和硅油型偶联剂中的一种以上。由此,能够提高与无机填料界面处的润湿性,从而进一步提高耐热性。
上述偶联剂的添加量,取决于上述无机填料的表面积,没有特别的限定,优选相对于100重量份无机填料,偶联剂含量为0.05~3重量份,特别优选为0.1~2重量份。如果偶联剂含量低于上述下限值,则有时不足以充分覆盖无机填料而降低耐热性改善的效果,如果偶联剂含量高于上述上限值,则有时会对反应产生影响而降低弯曲强度等。
上述树脂组合物中,根据需要,也可使用固化促进剂。该固化促进剂可以使用已知物质。例如,可举出环烷酸锌、环烷酸钴、辛酸锡、辛酸钴、双乙酰丙酮钴(II)和三乙酰丙酮钴(III)等的有机金属盐;三乙胺、三丁胺和二氮杂二环[2,2,2]辛烷等的叔胺类;2-苯基-4-甲基咪唑、2-乙基-4-乙基咪唑、2-苯基-4-甲基咪唑、2-苯基-4-甲基-5-羟基咪唑和2-苯基-4,5-二羟基咪唑等的咪唑类;苯酚、双酚A和壬基苯酚等的苯酚化合物;醋酸、苯甲酸、水杨酸和对甲基苯磺酸等的有机酸;或它们的混合物。
上述固化促进剂的含量,没有特别限定,优选为树脂组合物总量的0.01~5重量%,更优选为0.05~2重量%。如果含量低于上述下限值,则有时不能获得促进固化的效果,如果含量超过上述上限值,则有时树脂层2的贮存稳定性会降低。
上述树脂组合物中,可组合并用苯氧树脂、聚酰亚胺树脂、聚酰胺酰亚胺树脂、聚苯醚树脂、聚醚砜树脂等的热塑性树脂。
此外,上述树脂组合物中,根据需要,还可以加入颜料、抗氧化剂等上述组分以外的添加剂。
树脂层2,没有特别的限定,优选具有在芯部1的一侧表面上形成的第一树脂层21和在另一侧的表面上形成的第二树脂层22,构成第一树脂层21的第一树脂组合物与构成第二树脂层22的第二树脂组合物可以相同也可以不同。
第一树脂组合物与第二树脂组合物不同时,各树脂层上也可具有不同的功能。
另外,第一树脂组合物与第二树脂组合物相同的情形下,尺寸稳定性或基板翘曲的降低性能优异。
第一树脂层21的厚度,没有特别限定,优选为5~15μm,特别优选为8~10μm。另外,第二树脂层22的厚度,没有特别限定,优选为15~50μm,特别优选为25~35μm。另外,这些树脂层的厚度,可根据层叠的对方的电路的残铜率进行适宜地调整。
另外,通常,树脂层2,作为电路基板的积层使用,此时,使用该树脂层以填埋相对方的电路布线。
将树脂层2在电路布线中填埋的状态示于图3。第一树脂层21的厚度设为B2[μm]、第二树脂层22的厚度设为B1[μm]、相对方的电路布线部4的厚度设为t1[μm]且其残铜率设为S[%]、从电路布线部4的上端面(图3中上侧)4a至芯部1的厚度设为t2[μm],则满足B2<B1并且B1=t2+t1×(1-S/100)。
此处,t2的厚度,没有特别的限定,优选为0~15μm。另外,在担心通过电路布线部4与芯部1的接触而引起电路布线部4的绝缘性的降低时,优选将t2设为3~15μm。另一方面,使树脂层2的厚度变薄时,优选将t2设为0~5μm,进一步,为了同时满足绝缘性与薄度,优选将t2设为3~5μm。由此,能够使树脂层2的一侧在电路布线部4中的填埋性优异,并且能够赋予高的绝缘可靠性。
另外,作为制造内置有芯部1的树脂层2的方法,例如,可举出以下的方法。
即,制造预先将第一树脂组合物涂布到载体膜上的载体材料5a以及预先将第二树脂组合物涂布到载体膜上的载体材料5b,将该载体材料5a、5b在纤维基材11上层压后,剥离载体材料5a、5b的方法,由此,通过在厚度为25μm以下的纤维基材11上负载树脂材料,可得到内置有用纤维基材11构成的芯部1的树脂层2。
在此,对于预先制造载体材料5a、5b,在纤维基材11上层压该载体材料5a、5b,然后,剥离载体膜的方法,使用图4进行具体地说明。图4是表示制造树脂层2的工序的一个实例的工序图。
首先,准备涂布有第一树脂组合物及第二树脂组合物的载体材料5a及5b。
接下来,使用真空层压装置6,在减压下从纤维基材的两表面叠合载体材料5a及5b用层压辊61接合。通过减压接合,即使在纤维基材11的内部或载体材料5a、5b的树脂层与纤维基材11的接合部位上存在非填充部分,也可使该非填充部分形成减压气室或实质上的真空气室。因此,能够降低最终得到的树脂层2中产生的气室。其原因在于:减压气室或真空气室,能够通过后述的加热处理消除。作为在该减压下接合纤维基材11与载体材料5a、5b的其他的装置,例如,可使用真空盒装置。
接下来,接合纤维基材11与载体材料5a、5b之后,用热风干燥装置62以载体材料上涂布的树脂的熔融温度以上的温度进行加热处理。由此,几乎能够全部消去在上述减压下的接合工序中发生的减压气室等。
上述加热处理的其他的方法,例如,可使用红外线加热装置、加热辊装置、平板状的热盘压力装置等实施。
另外,作为获得上述的树脂层2的其他的方法,可将厚度为25μm以下的纤维基材11在粘度低的树脂清漆中浸渍、干燥形成第一树脂层21,进一步地,浸渍在其它的树脂清漆中形成第二树脂层22,从而,得到树脂层2。
(金属层)
由此得到的树脂层2的第一树脂层21的上侧(图1中的上侧)的表面上,设置金属层3。金属层3中,形成有与后续在树脂层2上形成的导通孔对应的开口部31。由此,金属层3具有保护层的作用,能够防止在激光照射形成导通孔时由激光的干涉波引起的树脂层2的表面产生劣化。
金属层3的厚度,没有特别的限定,优选为5μm以下,特别是2~4μm。厚度,在上述范围内,则最终制造基板时容易地除去金属层3。
作为上述的金属层3,例如,可举出可剥离的金属箔(例如,可剥离铜箔(ピ一ラブル铜箔))、通过电解电镀形成的金属层、通过非电解电镀形成的金属层等。其中,优选可剥离的金属箔(特别是,可剥离铜箔(ピ一ラブル铜箔))。使用可剥离的金属箔,则能够在比镀覆形成金属层更短的时间内形成,并且,能够提高金属层3的厚度精度。
作为构成金属层3的金属,可举出铜、铜系合金、铝、铝系合金等。特别是,作为高频用途使用,则优选相对于铝、铝系合金等电传导率高的铜以及铜系合金。
作为在树脂层2上接合金属层3的方法,例如,可举出真空挤压机、层压机等。其中,优选通过真空挤压机的接合方法。由此,能够提高金属层3与树脂层2的密接强度。
由此得到的层叠体10,由于树脂层2具有由纤维基材构成的芯部1,能够降低树脂裂纹等的发生,能够适于薄型化。进一步地,由于在金属层3中具有对应于在树脂层2上形成的导通孔的开口部31,在形成导通孔时的激光加工性也优异。
(层叠体的制造)
对于该层叠体10的制造方法的一个实例进行说明。
首先,通过上述方法准备内置有用纤维基材构成的芯部1的树脂层2(图5(a))。
在该树脂层2的单面侧上用真空挤压法层叠金属箔形成金属层3(图5(b))。此时,为了提高树脂层2与金属层3的密接性,优选使用高锰酸盐、重铬酸盐等的氧化剂等对树脂层2进行粗糙化处理。
另外,在树脂层2上形成金属层3,也可是,将构成树脂层2的第一树脂层21及第二树脂层22中的至少一者上形成有金属箔的物质作为载体材料5a或5b,在纤维基材11的两侧上叠合,通过层压辊61进行接合的方法。
接下来,在金属层3的表面上,贴合干膜7(图5(c))。干膜7,是感光性膜,其通过照射紫外线等有选择性地可溶或不溶于显影液。本实施方式中,通过照射紫外线等不溶于显影液。
贴合干膜7后,在形成开口部31的部分上覆盖掩膜71,照射紫外线72(图6(d))。由此,照射紫外线72的部分开始光固化,变得对显影液不溶。然后,用显影液处理干膜7,除去没有照射紫外线72的部分(用掩膜71覆盖的部分)。由此,在干膜7上形成与开口部31相当的部分73(图6(e))。在该部分73中,金属层3露出表面。该部分73形成的干膜7,在下述工序的蚀刻处理中具有掩膜的功用。
接下来,通过蚀刻处理,除去表面露出的金属层3的部分,形成开口部31(图6(f))。
然后,通过剥离液除去干膜7(掩膜),能够得到层叠体10(图6(g))
(基板的制造方法)
接下来,对于基板的制造方法的一个实例进行说明。
首先,准备在两表面上形成电路图案81的芯基板8(图7(a))。接下来,在芯基板8的电路图案81上层叠层叠体10(图7(b))。作为在电路图案81上层叠层叠体10的方法,例如,可举出真空挤压、层压等方法。其中,优选通过真空挤压的接合方法。由此,能够提高金属层3与树脂层2的密接强度。
另外,为了提高与层叠体10的密接性,在芯基板8的表面,优选使用高锰酸盐、重铬酸盐等氧化剂等对芯基板8的表面进行粗糙化处理。
接下来,在金属层3的开口部31上照射激光9(图7(c)),形成导通孔23(图7(d))。按照该方法,激光加工性优异。即,在形成导通孔23的部分的上侧的周围上设置有金属层3,因此,能够防止激光9的干涉波等对导通孔23的周围的损伤(使导通孔的开口部大至必要程度以上)。进一步地,也能够降低胶渣(smear)的发生。
在此,使用的激光9,例如,可使用CO2激光、UV-YAG激光等。
另外,优选在能够贯通树脂层2到达芯基板8的电路图案81的条件下照射激光9。由此,能够进一步降低干涉波的影响。
开口的导通孔23的开口直径(直径),没有特别的限定,优选导通孔23的上端侧231是55~85μm,特别优选是60~70μm。另外,导通孔23下端侧的232的开口直径(直径),没有特别的限定,优选是35~65μm,特别优选是50~60μm。导通孔23的开口直径在上述范围内,则特别是导通孔23内的导体的填埋性优异。
照射激光9后,通过蚀刻除去金属层3(图8(e))。接下来,在导通孔23内形成柱状的导体24,在树脂层2的表面上形成金属层3a(图8(f))。作为形成导体24的方法,例如,有填充导电性膏的方法、通过非电解电镀填埋的方法、通过电解电镀填埋的方法等。从在导通孔23内形成导体24并且在表层上形成金属层方面考虑,优选是通过电解电镀填埋的方法。
另外,在金属层上,实施蚀刻处理等形成电路图案,导通电路图案的规定的位置和导体24,得到多层布线板(基板)100(图8(g))。多层布线基板100,是所谓的“1-2-1基板”。本实施方式中,对在芯基板上形成一层树脂层(积层)的情形进行了说明,但是,本发明也可形成二层以上的树脂层。形成二层以上的树脂层的情形,通过反复进行从图7(b)开始的工序,能够得到多层布线板。
由此得到的基板,由于构成基板的树脂层的热膨胀系数小,所以即使作为基板全体,也能够减小其热膨胀系数。由此,能够降低搭载半导体元件等时产生的羁绊的翘曲等。
接下来,对半导体装置进行简单地说明。
如图9所示,半导体装置12,具有半导体元件121、上述的多层印刷布线基板(1-2-1基板)100。
半导体元件121,搭载在多层布线基板100的图中上侧(单表面侧)上,半导体元件121与多层印刷布线基板100,在规定的端子之间通过焊锡块13导通。
实施例
下面,通过实施例及比较例对本发明进行详细地说明,但本发明并不限定于此。
<实施例1>
(1)树脂清漆的制备
将酚醛清漆型氰酸酯树脂(プリマセツトPT-30、重均分子量约为700,ロンザジヤパン株式会社制造)(含量为树脂组合物总量的23.98重量%)、联苯基二亚甲基型环氧树脂(NC-3000、环氧当量275、重均分子量为2000,日本化药株式会社制造)(含量为树脂组合物总量的17.98重量%)、苯氧树脂/联苯基环氧树脂与双酚S环氧树脂的共聚的末端具有环氧基的树脂(YX-8100H30、重均分子量30000,ジヤパンエポキシレジン株式会社制造)(含量为树脂组合物总量的5.99重量%)、双酚A与双酚F共聚的苯氧树脂(jER4275、重均分子量为60000,ジヤパンエポキシレジン株式会社制造)(含量为树脂组合物总量的11.99重量%)、咪唑化合物(キュアゾ一ル1B2PZ(1-苄基-2-苯基咪唑)、四国化学工业株式会社制造)(含量为树脂组合物总量的0.06重量%)溶解在甲基异丁基酮中,使其分散。进一步地,添加无机填料/球状熔融石英(SO-25R,平均粒径0.5μm,株式会社アドマテツクス制造)(含量为树脂组合物总量的40重量%)与偶联剂/环氧硅烷偶联剂(A-187,GE东芝シリコ一ン株式会社制造)(含量为相对于无机填料100重量份为0.5重量份),使用高速搅拌装置搅拌10分钟,制得树脂清漆。
(2)载体材料的制造
使用聚对苯二甲酸乙二醇酯膜(SFB-38、厚度38μm、宽度480m,三菱化学聚酯社制造)作为载体膜,使用逗号涂布装置,涂布上述得到的树脂清漆,使在170℃下干燥3分钟,在载体膜的宽度方向的中心位置上形成厚度11μm、宽度410mm的树脂层,得到载体材料5a(最终形成第一树脂层)。
另外,调整以同样的方法涂布的树脂材料清漆的量,在载体膜的宽度方向的中心位置上形成厚度4μm、宽度360mm的树脂层,得到载体材料5b(最终形成第二树脂层)。
(3)树脂层的制造
使用作为纤维基材的玻璃织布(布料规格#1015、宽度360mm、厚度15μm、单位面积重量17g/m2)作为芯部材料,通过如图4所示的真空层压装置及热风干燥装置制造树脂层。
具体地,分别在玻璃织布的两表面上叠合上述载体材料5a及载体材料5b,使其在玻璃织布的宽度方向的中心位置上放置,在750Torr的减压条件下,使用80℃的层压辊进行接合。
在此,在玻璃织布的宽度方向尺寸的内侧区域上,分别在纤维布的两表面侧上接合载体材料5a及载体材料5b的树脂层,并且,在玻璃织布的宽度方向尺寸的外侧区域上,将载体材料5a和载体材料5b的树脂层之间接合。
接下来,通过使上述接合后的制品在2分钟内通过设定在120℃的横向搬运型的热风干燥装置内,不作用压力进行加热处理,得到厚度30μm(第一树脂层:11μm;纤维基材:15μm;第二树脂层:4μm)的树脂层。
(4)层叠体的制造
将得到的树脂层的单表面的聚对苯二甲酸乙二醇酯膜剥离,使用真空挤压机层叠作为金属层的可剥离铜箔(ピ一ラブル铜箔)(厚度18μm)。
接下来,将该金属层的表面进行粗糙化处理,然后,贴合感光性干膜(AR-320,株式会社东京应化工业制造),用掩膜材料覆盖相当于层叠体的开口部,照射紫外线(コンパクト曝光机EV-0800,株式会社小野测器制造)。由此,干膜的紫外线照射的部分发生光固化,未照射部分未固化。接下来,使用显影液(1%碳酸钠水溶液),进行显影处理,除去未照射紫外线的部分的干膜。接下来,用蚀刻处理液除去露出表面的金属层,进一步,除去干膜,得到层叠体。
(5)基板的制造
在两表面上形成电路图案的芯基板(4785GS,住友电木株式会社制造)的两表面上,用真空挤压法层叠上述层叠体。接下来,为了在树脂层部分上形成导通孔,进行激光照射。在激光照射中,使用CO2激光(三菱电机株式会社制造),在脉冲幅度为5μs、基准能量为2.0mJ、击穿(short)数为3击穿的加工条件下进行加工。然后,得到开口部的上端侧的开口直径为60μm~70μm,下端侧的开口直径为50μm~60μm的导通孔。接下来,通过蚀刻处理除去金属层。
蚀刻处理后,为了层间连接,在导通孔上进行填充孔电镀。具体地,将基板浸渍在硫酸铜液(奥野制药工业株式会社制造)中,在其两端上与基板平行地设置阴极,流通2小时直流电流20A,在将铜填充到导通孔中的同时,在基板的表面上形成铜层25μm。
再次重复同样的工序,得到1-2-1的基板。
(6)半导体装置的制造
在得到的1-2-1基板上搭载半导体元件得到半导体装置。具体地,在基板的表面上通过焊锡块接合半导体元件,在基板与半导体元件之间注入密封树脂组合物,形成填充(under fill)部,由此,制得半导体装置。
(实施例2)
除将纤维基材的厚度设为20μm以外,与实施例1同样进行。
(实施例3)
除将芯部材料改换为有机无纺布(MBBK6C、厚度15μm,株式会社クラレ制造)以外,与实施例1同样进行。
(实施例4)
除将第一树脂层的厚度设为7.5μm、第二树脂层的厚度设为7.5μm以外,与实施例1同样进行。
(实施例5)
在树脂清漆中,不使用氰酸酯树脂,将氰酸酯树脂部分改为环氧树脂使环氧树脂含量为树脂组合物总量的41.96重量%,除此以外,与实施例1同样进行。
(比较例1)
除省略形成金属层的工序以外,与实施例1同样进行。
(比较例2)
除没有使用作为芯部材料的纤维基材以外,与实施例1同样进行。
(比较例3)
除将纤维基材的厚度设为50μm(布料规格#1080、单位面积重量47g/m2,株式会社日东纺制造)以外,与实施例1同样进行。
对于各实施例及比较例得到的基板及半导体装置,进行下述的评价。评价内容与评价项目一并示出。将得到的结果示于表1。
1.关于激光加工性
对于激光加工性,使用SEM在10000倍下观察导通孔形成后的胶渣(smear)残渣的有无。各符号,如下所示。
◎:几乎没有胶渣(smear)残渣
○:在底部有胶渣(smear)残渣
△:在基材表面或孔壁面有胶渣(smear)残渣
×:不能开口
2.基板的表面方向的热膨胀系数
从树脂固化物采取4mm×20mm的评价用试样。
使用TMA装置(TMA)(TAインスツルメント社制造),以10℃/分钟进行升温测定,测得热膨胀系数。α1为玻璃化转变温度以下的热膨胀系数。
3.回流(reflow)试验后的耐裂纹性
将得到的半导体装置,进行条件为30℃、60%、168小时的前处理,然后,进行回流试验(峰值温度260℃、实施3次),然后,用超声波探测装置进行观察裂纹(剥离)。结果,用“合格数/样品总数”表示。另外,评价在n=4下进行。
4.热循环试验后的耐裂纹性
进行热循环试验(-55℃(30分钟)/125℃(30分钟)、500次循环)后,使用超声波探测装置进行观察裂纹(剥离)。结果,用“合格数/样品总数”表示。另外评价在n=4下进行。
表1
胶渣残渣 | 热膨胀系数(x方向)α1(ppm) | 回流试验后的耐裂纹性 | 热循环试验后的耐裂纹性 | |
实施例1 | ◎ | 11 | 4/4 | 4/4 |
实施例2 | ○ | 10 | 4/4 | 4/4 |
实施例3 | ◎ | 15 | 3/4 | 3/4 |
实施例4 | ◎ | 11 | 4/4 | 4/4 |
实施例5 | ◎ | 30 | 2/4 | 2/4 |
比较例1 | × | 11 | 3/4 | 3/4 |
比较例2 | ○ | 40 | 0/4 | 0/4 |
比较例3 | △ | 10 | 4/4 | 4/4 |
由表1可知,实施例1~5得到的树脂层,胶渣(smear)残渣少,激光加工性优异。
另外,实施例1~4得到的基板显示出,热膨胀系数特别小,搭载半导体元件后的基板的翘曲变小。
另外,实施例1~4得到的半导体装置,回流试验后和热循环试验后的耐裂纹性特别优异。
工业实用性
根据本发明,能够充分抑制激光加工时的胶渣(smear)的发生,能够进一步提高激光加工性。
另外,作为上述树脂层使用氰酸酯树脂时,能够降低树脂层的热膨胀系数,由此,能够降低使用该树脂层制作基板时的基板的翘曲的发生。因此,具有工业实用性。
Claims (12)
1.一种层叠体,其具有树脂层和金属层,该树脂层内置有用纤维基材构成的芯部,该金属层在上述树脂层的至少一个表面上接合,其特征在于,
上述纤维基材的厚度在25μm以下,并且,相对于上述树脂层的厚度方向,上述纤维基材偏置设置;
上述金属层具有对应于在上述树脂层上形成的导通孔的开口部。
2.如权利要求1所述的层叠体,其中,上述纤维基材是玻璃纤维基材。
3.如权利要求1所述的层叠体,其中,构成上述金属层的金属是铜和铜系合金中至少一者。
4.如权利要求1所述的层叠体,其中,上述树脂层是由含有氰酸酯树脂的树脂组合物构成。
5.如权利要求1所述的层叠体,其中,上述树脂层具有在上述用纤维基材构成的芯部的一侧表面上形成的第一树脂层和在另一侧表面上形成的第二树脂层,
上述第一树脂层的厚度是5~15μm,上述第二树脂层的厚度是15~50μm。
6.如权利要求5所述的层叠体,其中,构成上述第一树脂层的第一树脂组合物与构成上述第二树脂层的第二树脂组合物不相同。
7.一种基板的制造方法,其特征在于,包括:
用激光照射权利要求1所述的层叠体,从而在上述树脂层上形成导通孔的工序;
在上述导通孔形成后从上述层叠体除去上述金属层的工序。
8.如权利要求7所述的基板的制造方法,其中,上述导通孔的开口直径为:在上述金属层侧是55~85μm、在上述金属层的相反一侧是35~65μm。
9.一种基板,其特征在于,通过权利要求7所述的制造方法制得。
10.一种基板,其具有芯基板、在该芯基板的至少一个表面上形成的电路布线部和在该电路布线部上设置的树脂层,其特征在于,
上述树脂层具有用纤维基材构成的芯部、该芯部的一侧表面上形成的第一树脂层和在上述芯部的另一侧表面上形成的第二树脂层,
上述纤维基材的厚度为25μm以下,并且
设置成使上述电路布线部在上述第二树脂层的一部分中填埋。
11.如权利要求10所述的基板,其中,当将上述第一树脂层的厚度设为B2[μm]、上述第二树脂层的厚度设为B1[μm]、上述电路布线部的厚度设为t1[μm]且其残铜率设为S[%]、从上述电路布线部的上述第二树脂层侧的端面至上述芯部的上述第二树脂层的厚度设为t2[μm]时,
满足B2<B1并且B1=t2+t1×(1-S/100)。
12.一种半导体装置,其特征在于,其是在权利要求9所述的基板上搭载半导体元件而成。
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