CN101473441B - 具有低串扰的pmos像素结构 - Google Patents

具有低串扰的pmos像素结构 Download PDF

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Publication number
CN101473441B
CN101473441B CN2007800230656A CN200780023065A CN101473441B CN 101473441 B CN101473441 B CN 101473441B CN 2007800230656 A CN2007800230656 A CN 2007800230656A CN 200780023065 A CN200780023065 A CN 200780023065A CN 101473441 B CN101473441 B CN 101473441B
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substrate
ground floor
type
image area
imageing sensor
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Chinese (zh)
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CN101473441A (zh
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E·G·斯蒂芬斯
H·科莫里
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Omnivision Technologies Inc
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Eastman Kodak Co
Omnivision Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2007800230656A 2006-06-20 2007-03-23 具有低串扰的pmos像素结构 Active CN101473441B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/455,985 US7728277B2 (en) 2005-11-16 2006-06-20 PMOS pixel structure with low cross talk for active pixel image sensors
US11/455,985 2006-06-20
PCT/US2007/007388 WO2007149137A1 (en) 2006-06-20 2007-03-23 Pmos pixel structure with low cross talk

Publications (2)

Publication Number Publication Date
CN101473441A CN101473441A (zh) 2009-07-01
CN101473441B true CN101473441B (zh) 2011-09-28

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US (2) US7728277B2 (enExample)
EP (1) EP2030240B1 (enExample)
JP (1) JP5295105B2 (enExample)
KR (1) KR101329432B1 (enExample)
CN (1) CN101473441B (enExample)
TW (1) TWI427763B (enExample)
WO (1) WO2007149137A1 (enExample)

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US20100188545A1 (en) 2010-07-29
CN101473441A (zh) 2009-07-01
EP2030240A1 (en) 2009-03-04
TWI427763B (zh) 2014-02-21
WO2007149137A1 (en) 2007-12-27
US7728277B2 (en) 2010-06-01
KR20090023617A (ko) 2009-03-05
JP5295105B2 (ja) 2013-09-18
US20070108371A1 (en) 2007-05-17
TW200818461A (en) 2008-04-16
EP2030240B1 (en) 2015-08-26
JP2009541992A (ja) 2009-11-26
KR101329432B1 (ko) 2013-11-14

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