FR2934926B1 - Capteur d'images miniature. - Google Patents

Capteur d'images miniature.

Info

Publication number
FR2934926B1
FR2934926B1 FR0855410A FR0855410A FR2934926B1 FR 2934926 B1 FR2934926 B1 FR 2934926B1 FR 0855410 A FR0855410 A FR 0855410A FR 0855410 A FR0855410 A FR 0855410A FR 2934926 B1 FR2934926 B1 FR 2934926B1
Authority
FR
France
Prior art keywords
image sensor
miniature image
miniature
sensor
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0855410A
Other languages
English (en)
Other versions
FR2934926A1 (fr
Inventor
Francois Roy
Arnaud Tournier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics SA
Priority to FR0855410A priority Critical patent/FR2934926B1/fr
Priority to US12/534,344 priority patent/US8754456B2/en
Publication of FR2934926A1 publication Critical patent/FR2934926A1/fr
Application granted granted Critical
Publication of FR2934926B1 publication Critical patent/FR2934926B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR0855410A 2008-08-05 2008-08-05 Capteur d'images miniature. Expired - Fee Related FR2934926B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0855410A FR2934926B1 (fr) 2008-08-05 2008-08-05 Capteur d'images miniature.
US12/534,344 US8754456B2 (en) 2008-08-05 2009-08-03 Miniature image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0855410A FR2934926B1 (fr) 2008-08-05 2008-08-05 Capteur d'images miniature.

Publications (2)

Publication Number Publication Date
FR2934926A1 FR2934926A1 (fr) 2010-02-12
FR2934926B1 true FR2934926B1 (fr) 2011-01-21

Family

ID=40475040

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0855410A Expired - Fee Related FR2934926B1 (fr) 2008-08-05 2008-08-05 Capteur d'images miniature.

Country Status (2)

Country Link
US (1) US8754456B2 (fr)
FR (1) FR2934926B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6214132B2 (ja) * 2012-02-29 2017-10-18 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
US9054004B2 (en) * 2013-09-18 2015-06-09 Taiwan Semiconductor Manufacturing Company Limited Pixel isolation structures in backside illuminated image sensors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148052A (en) * 1977-10-12 1979-04-03 Westinghouse Electric Corp. Radiant energy sensor
US6281081B1 (en) * 1998-11-13 2001-08-28 United Microelectronics Corp. Method of preventing current leakage around a shallow trench isolation structure
US6821826B1 (en) * 2003-09-30 2004-11-23 International Business Machines Corporation Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers
KR100690884B1 (ko) * 2005-04-28 2007-03-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP4714528B2 (ja) * 2005-08-18 2011-06-29 富士フイルム株式会社 固体撮像素子の製造方法および固体撮像素子
US7728277B2 (en) * 2005-11-16 2010-06-01 Eastman Kodak Company PMOS pixel structure with low cross talk for active pixel image sensors
FR2904143A1 (fr) * 2006-07-24 2008-01-25 St Microelectronics Sa Capteur d'images eclaire par la face arriere a temperature de substrat uniforme
US7485940B2 (en) * 2007-01-24 2009-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Guard ring structure for improving crosstalk of backside illuminated image sensor

Also Published As

Publication number Publication date
FR2934926A1 (fr) 2010-02-12
US8754456B2 (en) 2014-06-17
US20100032734A1 (en) 2010-02-11

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20160429