FR2930676B1 - Capteur d'image de tres faibles dimensions - Google Patents

Capteur d'image de tres faibles dimensions

Info

Publication number
FR2930676B1
FR2930676B1 FR0852759A FR0852759A FR2930676B1 FR 2930676 B1 FR2930676 B1 FR 2930676B1 FR 0852759 A FR0852759 A FR 0852759A FR 0852759 A FR0852759 A FR 0852759A FR 2930676 B1 FR2930676 B1 FR 2930676B1
Authority
FR
France
Prior art keywords
image sensor
low dimensions
dimensions
low
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0852759A
Other languages
English (en)
Other versions
FR2930676A1 (fr
Inventor
Francois Roy
Benoit Ramadout
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR0852759A priority Critical patent/FR2930676B1/fr
Priority to US12/429,413 priority patent/US8193479B2/en
Publication of FR2930676A1 publication Critical patent/FR2930676A1/fr
Application granted granted Critical
Publication of FR2930676B1 publication Critical patent/FR2930676B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR0852759A 2008-04-24 2008-04-24 Capteur d'image de tres faibles dimensions Expired - Fee Related FR2930676B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0852759A FR2930676B1 (fr) 2008-04-24 2008-04-24 Capteur d'image de tres faibles dimensions
US12/429,413 US8193479B2 (en) 2008-04-24 2009-04-24 Very small image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0852759A FR2930676B1 (fr) 2008-04-24 2008-04-24 Capteur d'image de tres faibles dimensions

Publications (2)

Publication Number Publication Date
FR2930676A1 FR2930676A1 (fr) 2009-10-30
FR2930676B1 true FR2930676B1 (fr) 2011-07-22

Family

ID=40044065

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0852759A Expired - Fee Related FR2930676B1 (fr) 2008-04-24 2008-04-24 Capteur d'image de tres faibles dimensions

Country Status (2)

Country Link
US (1) US8193479B2 (fr)
FR (1) FR2930676B1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2315251A1 (fr) * 2009-10-22 2011-04-27 STMicroelectronics (Crolles 2) SAS Capteur d'image à grille de transfert verticale et son procédé de fabrication
CN102214706A (zh) * 2010-04-08 2011-10-12 英特赛尔美国股份有限公司 带有控制电场的导电槽的半导体器件
US20110249134A1 (en) * 2010-04-08 2011-10-13 Intersil Americas Inc. Semiconductor device with conductive trenches to control electric field
FR2963163A1 (fr) * 2010-07-21 2012-01-27 St Microelectronics Crolles 2 Procede de reinitialisation d'un photosite et photosite correspondant
FR2963187A1 (fr) * 2010-07-21 2012-01-27 St Microelectronics Crolles 2 Dispositif d'imagerie a performances ameliorees et procede de commande.
FR2969821A1 (fr) 2010-12-23 2012-06-29 St Microelectronics Sa Dispositif d'imagerie matriciel a photosites a commandes monocoup de transfert de charges
FR2977978A1 (fr) * 2011-07-12 2013-01-18 St Microelectronics Grenoble 2 Dispositif de transfert de charges photogenerees haute frequence et applications
FR2980641B1 (fr) * 2011-09-28 2014-04-11 E2V Semiconductors Capteur d'image a multiplication d'electrons par grilles verticales
US9190540B2 (en) 2011-12-21 2015-11-17 Infineon Technologies Ag Photo cell devices for phase-sensitive detection of light signals
JP6168331B2 (ja) * 2012-05-23 2017-07-26 ソニー株式会社 撮像素子、および撮像装置
KR101967835B1 (ko) * 2012-05-31 2019-04-10 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 픽셀 어레이
FR3000606B1 (fr) 2013-01-02 2015-01-30 Commissariat Energie Atomique Capteur d'image
JP2015053411A (ja) 2013-09-09 2015-03-19 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
FR3019378A1 (fr) 2014-03-25 2015-10-02 St Microelectronics Crolles 2 Structure d'isolement entre des photodiodes
CN104282707B (zh) * 2014-10-17 2017-09-05 北京思比科微电子技术股份有限公司 全局曝光方式的图像传感器像素结构及其控制方法
FR3027732B1 (fr) 2014-10-27 2016-12-23 Commissariat Energie Atomique Capteur d'image a electrodes verticales
FR3030884B1 (fr) * 2014-12-19 2016-12-30 Stmicroelectronics (Grenoble 2) Sas Structure de pixel a multiples photosites
US9584744B2 (en) 2015-06-23 2017-02-28 Semiconductor Components Industries, Llc Image sensors with voltage-biased trench isolation structures
FR3043250A1 (fr) 2015-10-30 2017-05-05 St Microelectronics Crolles 2 Sas Capteur d'image
FR3049389A1 (fr) * 2016-03-22 2017-09-29 St Microelectronics Crolles 2 Sas Mur d'isolement et son procede de fabrication
FR3094571B1 (fr) * 2019-03-27 2022-04-29 St Microelectronics Crolles 2 Sas Dispositif électronique à photodiode
US11581345B2 (en) 2019-12-18 2023-02-14 Stmicroelectronics (Crolles 2) Sas Image sensor comprising, a pixel equipped with a MOS capacitive element, and corresponding control method
US11923465B2 (en) 2019-12-19 2024-03-05 Stmicroelectronics (Crolles 2) Sas Photodiode comprising a memory area

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177333B1 (en) * 1999-01-14 2001-01-23 Micron Technology, Inc. Method for making a trench isolation for semiconductor devices
US20030089929A1 (en) * 2001-02-14 2003-05-15 Rhodes Howard E. Trench photosensor for a CMOS imager
US7384854B2 (en) * 2002-03-08 2008-06-10 International Business Machines Corporation Method of forming low capacitance ESD robust diodes
US7154136B2 (en) * 2004-02-20 2006-12-26 Micron Technology, Inc. Isolation structures for preventing photons and carriers from reaching active areas and methods of formation
US7492027B2 (en) * 2004-02-20 2009-02-17 Micron Technology, Inc. Reduced crosstalk sensor and method of formation
CN1993832B (zh) 2004-07-20 2010-08-18 富士通微电子株式会社 Cmos摄像元件
US7297995B2 (en) * 2004-08-24 2007-11-20 Micron Technology, Inc. Transparent metal shielded isolation for image sensors
KR100630704B1 (ko) * 2004-10-20 2006-10-02 삼성전자주식회사 비평면 구조의 트랜지스터를 구비한 ｃｍｏｓ 이미지 센서및 그 제조 방법
JP2007317939A (ja) * 2006-05-26 2007-12-06 Matsushita Electric Ind Co Ltd 固体撮像素子及びその製造方法

Also Published As

Publication number Publication date
US20090266973A1 (en) 2009-10-29
FR2930676A1 (fr) 2009-10-30
US8193479B2 (en) 2012-06-05

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231