FR3030884B1 - Structure de pixel a multiples photosites - Google Patents

Structure de pixel a multiples photosites

Info

Publication number
FR3030884B1
FR3030884B1 FR1462964A FR1462964A FR3030884B1 FR 3030884 B1 FR3030884 B1 FR 3030884B1 FR 1462964 A FR1462964 A FR 1462964A FR 1462964 A FR1462964 A FR 1462964A FR 3030884 B1 FR3030884 B1 FR 3030884B1
Authority
FR
France
Prior art keywords
pixel structure
photosites
multiple photosites
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1462964A
Other languages
English (en)
Other versions
FR3030884A1 (fr
Inventor
Flavien Hirigoyen
Emilie Huss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Grenoble 2 SAS
Original Assignee
STMicroelectronics Grenoble 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Grenoble 2 SAS filed Critical STMicroelectronics Grenoble 2 SAS
Priority to FR1462964A priority Critical patent/FR3030884B1/fr
Priority to US14/838,456 priority patent/US9521304B2/en
Publication of FR3030884A1 publication Critical patent/FR3030884A1/fr
Application granted granted Critical
Publication of FR3030884B1 publication Critical patent/FR3030884B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR1462964A 2014-12-19 2014-12-19 Structure de pixel a multiples photosites Expired - Fee Related FR3030884B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1462964A FR3030884B1 (fr) 2014-12-19 2014-12-19 Structure de pixel a multiples photosites
US14/838,456 US9521304B2 (en) 2014-12-19 2015-08-28 Multiple photosites pixel architecture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1462964A FR3030884B1 (fr) 2014-12-19 2014-12-19 Structure de pixel a multiples photosites

Publications (2)

Publication Number Publication Date
FR3030884A1 FR3030884A1 (fr) 2016-06-24
FR3030884B1 true FR3030884B1 (fr) 2016-12-30

Family

ID=53298441

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1462964A Expired - Fee Related FR3030884B1 (fr) 2014-12-19 2014-12-19 Structure de pixel a multiples photosites

Country Status (2)

Country Link
US (1) US9521304B2 (fr)
FR (1) FR3030884B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4250361A3 (fr) 2016-12-13 2024-04-17 STMicroelectronics (Research & Development) Limited Cellule de stockage de charge et procédé de fabrication d'une cellule de stockage de charge

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JP4935354B2 (ja) * 2004-07-20 2012-05-23 富士通セミコンダクター株式会社 Ｃｍｏｓ撮像素子
JP4492250B2 (ja) * 2004-08-11 2010-06-30 ソニー株式会社 固体撮像素子
US20060125947A1 (en) * 2004-12-09 2006-06-15 Packer Jimmy L Imaging with clustered photosite arrays
JP2007096271A (ja) * 2005-09-05 2007-04-12 Toshiba Corp 固体撮像装置及びその製造方法
US7667183B2 (en) * 2006-03-10 2010-02-23 Samsung Electronics Co., Ltd. Image sensor with high fill factor pixels and method for forming an image sensor
US20070246788A1 (en) * 2006-04-21 2007-10-25 Mauritzson Richard A N-well barrier pixels for improved protection of dark reference columns and rows from blooming and crosstalk
US9252251B2 (en) * 2006-08-03 2016-02-02 Infineon Technologies Austria Ag Semiconductor component with a space saving edge structure
JP2009038263A (ja) * 2007-08-02 2009-02-19 Sharp Corp 固体撮像素子および電子情報機器
KR100858033B1 (ko) * 2007-10-15 2008-09-10 (주)실리콘화일 4ｔ－4ｓ 스텝 ＆ 리피트 단위픽셀 및 상기 단위픽셀을구비하는 이미지센서
JP5292787B2 (ja) * 2007-11-30 2013-09-18 ソニー株式会社 固体撮像装置及びカメラ
US8144226B2 (en) * 2008-01-04 2012-03-27 AltaSens, Inc Two-by-two pixel structure in an imaging system-on-chip
JP5262180B2 (ja) * 2008-02-26 2013-08-14 ソニー株式会社 固体撮像装置及びカメラ
FR2930676B1 (fr) * 2008-04-24 2011-07-22 St Microelectronics Crolles 2 Capteur d'image de tres faibles dimensions
JP5408954B2 (ja) * 2008-10-17 2014-02-05 キヤノン株式会社 撮像装置、及び撮像システム
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP2010192705A (ja) * 2009-02-18 2010-09-02 Sony Corp 固体撮像装置、電子機器、および、その製造方法
US8405751B2 (en) * 2009-08-03 2013-03-26 International Business Machines Corporation Image sensor pixel structure employing a shared floating diffusion
US8269264B2 (en) * 2009-11-09 2012-09-18 Omnivision Technologies, Inc. Image sensor having waveguides formed in color filters
FR2955701A1 (fr) * 2010-01-28 2011-07-29 St Microelectronics Sa Structure compacte de capteur d'image
FR2963187A1 (fr) * 2010-07-21 2012-01-27 St Microelectronics Crolles 2 Dispositif d'imagerie a performances ameliorees et procede de commande.
US8101450B1 (en) * 2010-12-13 2012-01-24 Omnivision Technologies, Inc. Photodetector isolation in image sensors
JP2012238648A (ja) * 2011-05-10 2012-12-06 Sony Corp 固体撮像装置及び電子機器
JPWO2012161225A1 (ja) * 2011-05-24 2014-07-31 ソニー株式会社 固体撮像素子およびカメラシステム
FR2979485B1 (fr) * 2011-08-26 2016-09-09 E2V Semiconductors Capteur d'image a regroupement de pixels
JP6168331B2 (ja) * 2012-05-23 2017-07-26 ソニー株式会社 撮像素子、および撮像装置
JP6008669B2 (ja) 2012-09-19 2016-10-19 キヤノン株式会社 固体撮像素子およびその製造方法ならびにカメラ
FR3000606B1 (fr) 2013-01-02 2015-01-30 Commissariat Energie Atomique Capteur d'image
US8773562B1 (en) * 2013-01-31 2014-07-08 Apple Inc. Vertically stacked image sensor
JP6119432B2 (ja) * 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
JP2015012127A (ja) * 2013-06-28 2015-01-19 ソニー株式会社 固体撮像素子および電子機器
JP2015153772A (ja) * 2014-02-10 2015-08-24 株式会社東芝 固体撮像装置
US9536920B2 (en) * 2014-03-28 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked image sensor having a barrier layer
KR102268714B1 (ko) * 2014-06-23 2021-06-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102244679B1 (ko) * 2014-07-15 2021-04-27 삼성전자주식회사 이미지 센서 및 이미지 센서의 동작 방법
KR102268707B1 (ko) * 2014-07-28 2021-06-28 삼성전자주식회사 이미지 센서
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Also Published As

Publication number Publication date
US20160182780A1 (en) 2016-06-23
US9521304B2 (en) 2016-12-13
FR3030884A1 (fr) 2016-06-24

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