FR2910707B1 - Capteur d'image a haute densite d'integration - Google Patents

Capteur d'image a haute densite d'integration

Info

Publication number
FR2910707B1
FR2910707B1 FR0611082A FR0611082A FR2910707B1 FR 2910707 B1 FR2910707 B1 FR 2910707B1 FR 0611082 A FR0611082 A FR 0611082A FR 0611082 A FR0611082 A FR 0611082A FR 2910707 B1 FR2910707 B1 FR 2910707B1
Authority
FR
France
Prior art keywords
image sensor
high density
density integration
integration
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0611082A
Other languages
English (en)
Other versions
FR2910707A1 (fr
Inventor
Eric Pourquier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to FR0611082A priority Critical patent/FR2910707B1/fr
Priority to PCT/EP2007/063664 priority patent/WO2008074688A1/fr
Priority to JP2009541977A priority patent/JP5250911B2/ja
Priority to US12/518,456 priority patent/US8003433B2/en
Publication of FR2910707A1 publication Critical patent/FR2910707A1/fr
Application granted granted Critical
Publication of FR2910707B1 publication Critical patent/FR2910707B1/fr
Priority to FI20095796A priority patent/FI20095796A/fi
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
FR0611082A 2006-12-20 2006-12-20 Capteur d'image a haute densite d'integration Expired - Fee Related FR2910707B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0611082A FR2910707B1 (fr) 2006-12-20 2006-12-20 Capteur d'image a haute densite d'integration
PCT/EP2007/063664 WO2008074688A1 (fr) 2006-12-20 2007-12-11 Procede de fabrication de capteur d'image a haute densite d'integration
JP2009541977A JP5250911B2 (ja) 2006-12-20 2007-12-11 高集積密度画像センサの製造プロセス
US12/518,456 US8003433B2 (en) 2006-12-20 2007-12-11 Process for fabricating a high-integration-density image sensor
FI20095796A FI20095796A (fi) 2006-12-20 2009-07-17 Menetelmä integraatiotiheydeltään korkean kuva-anturin valmistamiseksi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0611082A FR2910707B1 (fr) 2006-12-20 2006-12-20 Capteur d'image a haute densite d'integration

Publications (2)

Publication Number Publication Date
FR2910707A1 FR2910707A1 (fr) 2008-06-27
FR2910707B1 true FR2910707B1 (fr) 2009-06-12

Family

ID=38255891

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0611082A Expired - Fee Related FR2910707B1 (fr) 2006-12-20 2006-12-20 Capteur d'image a haute densite d'integration

Country Status (5)

Country Link
US (1) US8003433B2 (fr)
JP (1) JP5250911B2 (fr)
FI (1) FI20095796A (fr)
FR (1) FR2910707B1 (fr)
WO (1) WO2008074688A1 (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5367323B2 (ja) * 2008-07-23 2013-12-11 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
FR2937790B1 (fr) * 2008-10-28 2011-03-25 E2V Semiconductors Capteur d'image aminci
JP5178569B2 (ja) * 2009-02-13 2013-04-10 株式会社東芝 固体撮像装置
FR2943177B1 (fr) 2009-03-12 2011-05-06 Soitec Silicon On Insulator Procede de fabrication d'une structure multicouche avec report de couche circuit
JP5773379B2 (ja) * 2009-03-19 2015-09-02 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
FR2947380B1 (fr) * 2009-06-26 2012-12-14 Soitec Silicon Insulator Technologies Procede de collage par adhesion moleculaire.
KR101648200B1 (ko) * 2009-10-22 2016-08-12 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP5442394B2 (ja) 2009-10-29 2014-03-12 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
TWI515885B (zh) 2009-12-25 2016-01-01 新力股份有限公司 半導體元件及其製造方法，及電子裝置
JP5853351B2 (ja) 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP6173410B2 (ja) * 2010-06-30 2017-08-02 キヤノン株式会社 固体撮像装置および固体撮像装置の製造方法
JP5553693B2 (ja) 2010-06-30 2014-07-16 キヤノン株式会社 固体撮像装置及び撮像システム
JP2012064709A (ja) 2010-09-15 2012-03-29 Sony Corp 固体撮像装置及び電子機器
JP2012094720A (ja) 2010-10-27 2012-05-17 Sony Corp 固体撮像装置、半導体装置、固体撮像装置の製造方法、半導体装置の製造方法、及び電子機器
TWI467746B (zh) * 2010-12-15 2015-01-01 Sony Corp 半導體元件及其製造方法與電子裝置
JP2013077711A (ja) * 2011-09-30 2013-04-25 Sony Corp 半導体装置および半導体装置の製造方法
JP5970826B2 (ja) 2012-01-18 2016-08-17 ソニー株式会社 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器
JP6214132B2 (ja) 2012-02-29 2017-10-18 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
DE102013217577A1 (de) * 2013-09-04 2015-03-05 Conti Temic Microelectronic Gmbh Kamerasystem für ein Fahrzeug
JP2015135839A (ja) * 2014-01-16 2015-07-27 オリンパス株式会社 半導体装置、固体撮像装置、および撮像装置
JP6079807B2 (ja) * 2015-03-24 2017-02-15 ソニー株式会社 固体撮像装置及び電子機器
US9704827B2 (en) 2015-06-25 2017-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid bond pad structure
JP6233376B2 (ja) * 2015-09-28 2017-11-22 ソニー株式会社 固体撮像装置及び電子機器
JP6256562B2 (ja) * 2016-10-13 2018-01-10 ソニー株式会社 固体撮像装置及び電子機器
JP6746547B2 (ja) * 2017-09-12 2020-08-26 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP2018078305A (ja) * 2017-12-07 2018-05-17 ソニー株式会社 固体撮像装置及び電子機器
JP7116591B2 (ja) * 2018-05-18 2022-08-10 キヤノン株式会社 撮像装置及びその製造方法
JP7034997B2 (ja) * 2019-09-26 2022-03-14 キヤノン株式会社 半導体デバイスおよび装置の製造方法
JP7001120B2 (ja) * 2020-04-14 2022-01-19 ソニーグループ株式会社 固体撮像装置及び電子機器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897477B2 (en) * 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
JP4304927B2 (ja) * 2002-07-16 2009-07-29 ソニー株式会社 固体撮像素子及びその製造方法
US6927432B2 (en) * 2003-08-13 2005-08-09 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
US6984816B2 (en) * 2003-08-13 2006-01-10 Motorola, Inc. Vertically integrated photosensor for CMOS imagers
US6809008B1 (en) * 2003-08-28 2004-10-26 Motorola, Inc. Integrated photosensor for CMOS imagers
US7214999B2 (en) * 2003-10-31 2007-05-08 Motorola, Inc. Integrated photoserver for CMOS imagers
FR2863773B1 (fr) * 2003-12-12 2006-05-19 Atmel Grenoble Sa Procede de fabrication de puces electroniques en silicium aminci
JP4432502B2 (ja) * 2004-01-20 2010-03-17 ソニー株式会社 半導体装置
JP4389626B2 (ja) * 2004-03-29 2009-12-24 ソニー株式会社 固体撮像素子の製造方法
US8049293B2 (en) * 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
FR2888043B1 (fr) * 2005-07-01 2007-11-30 Atmel Grenoble Soc Par Actions Capteur d'image a galette de fibres optiques
FR2895566B1 (fr) * 2005-12-23 2008-04-18 Atmel Grenoble Soc Par Actions Capteur d'image aminci a plots de contact isoles par tranchee
FR2910705B1 (fr) * 2006-12-20 2009-02-27 E2V Semiconductors Soc Par Act Structure de plots de connexion pour capteur d'image sur substrat aminci
US7528420B2 (en) * 2007-05-23 2009-05-05 Visera Technologies Company Limited Image sensing devices and methods for fabricating the same

Also Published As

Publication number Publication date
JP5250911B2 (ja) 2013-07-31
FI20095796A (fi) 2009-07-17
US20090275165A1 (en) 2009-11-05
FR2910707A1 (fr) 2008-06-27
JP2010514177A (ja) 2010-04-30
US8003433B2 (en) 2011-08-23
WO2008074688A1 (fr) 2008-06-26

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Legal Events

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PLFP Fee payment

Year of fee payment: 10

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Year of fee payment: 11

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CD Change of name or company name

Owner name: TELEDYNE E2V SEMICONDUCTORS SAS, FR

Effective date: 20180907

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Year of fee payment: 14

ST Notification of lapse

Effective date: 20210806