FR2937790B1 - Capteur d'image aminci - Google Patents

Capteur d'image aminci

Info

Publication number
FR2937790B1
FR2937790B1 FR0805983A FR0805983A FR2937790B1 FR 2937790 B1 FR2937790 B1 FR 2937790B1 FR 0805983 A FR0805983 A FR 0805983A FR 0805983 A FR0805983 A FR 0805983A FR 2937790 B1 FR2937790 B1 FR 2937790B1
Authority
FR
France
Prior art keywords
aminci
image sensor
sensor
image
aminci image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0805983A
Other languages
English (en)
Other versions
FR2937790A1 (fr
Inventor
Pierre Blanchard
Yann Henrion
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to FR0805983A priority Critical patent/FR2937790B1/fr
Publication of FR2937790A1 publication Critical patent/FR2937790A1/fr
Application granted granted Critical
Publication of FR2937790B1 publication Critical patent/FR2937790B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR0805983A 2008-10-28 2008-10-28 Capteur d'image aminci Expired - Fee Related FR2937790B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0805983A FR2937790B1 (fr) 2008-10-28 2008-10-28 Capteur d'image aminci

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0805983A FR2937790B1 (fr) 2008-10-28 2008-10-28 Capteur d'image aminci

Publications (2)

Publication Number Publication Date
FR2937790A1 FR2937790A1 (fr) 2010-04-30
FR2937790B1 true FR2937790B1 (fr) 2011-03-25

Family

ID=40756386

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0805983A Expired - Fee Related FR2937790B1 (fr) 2008-10-28 2008-10-28 Capteur d'image aminci

Country Status (1)

Country Link
FR (1) FR2937790B1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
JPH06275803A (ja) * 1993-03-18 1994-09-30 Hitachi Ltd 半導体装置及びその製造方法
JP4032454B2 (ja) * 1997-06-27 2008-01-16 ソニー株式会社 三次元回路素子の製造方法
JP4046067B2 (ja) * 2003-11-04 2008-02-13 ソニー株式会社 固体撮像素子の製造方法
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
US7749799B2 (en) * 2005-11-15 2010-07-06 California Institute Of Technology Back-illuminated imager and method for making electrical and optical connections to same
FR2910707B1 (fr) * 2006-12-20 2009-06-12 E2V Semiconductors Soc Par Act Capteur d'image a haute densite d'integration

Also Published As

Publication number Publication date
FR2937790A1 (fr) 2010-04-30

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Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

CD Change of name or company name

Owner name: TELEDYNE E2V SEMICONDUCTORS SAS, FR

Effective date: 20180907

PLFP Fee payment

Year of fee payment: 11

ST Notification of lapse

Effective date: 20200910