DE602004032102D1 - Festkörperbildsensor - Google Patents

Festkörperbildsensor

Info

Publication number
DE602004032102D1
DE602004032102D1 DE602004032102T DE602004032102T DE602004032102D1 DE 602004032102 D1 DE602004032102 D1 DE 602004032102D1 DE 602004032102 T DE602004032102 T DE 602004032102T DE 602004032102 T DE602004032102 T DE 602004032102T DE 602004032102 D1 DE602004032102 D1 DE 602004032102D1
Authority
DE
Germany
Prior art keywords
image sensor
solid state
state image
solid
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004032102T
Other languages
English (en)
Inventor
Takashi Abe
Ryoji Suzuki
Keiji Mabuchi
Tetsuya Iizuka
Takahisa Ueno
Tsutomu Haruta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE602004032102D1 publication Critical patent/DE602004032102D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
DE602004032102T 2003-11-05 2004-11-03 Festkörperbildsensor Active DE602004032102D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003375202A JP4075773B2 (ja) 2003-11-05 2003-11-05 固体撮像装置

Publications (1)

Publication Number Publication Date
DE602004032102D1 true DE602004032102D1 (de) 2011-05-19

Family

ID=34431270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004032102T Active DE602004032102D1 (de) 2003-11-05 2004-11-03 Festkörperbildsensor

Country Status (7)

Country Link
US (5) US7485903B2 (de)
EP (2) EP2254154B1 (de)
JP (1) JP4075773B2 (de)
KR (1) KR101158915B1 (de)
CN (2) CN100568517C (de)
DE (1) DE602004032102D1 (de)
TW (1) TWI247422B (de)

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JP4756839B2 (ja) * 2004-09-01 2011-08-24 キヤノン株式会社 固体撮像装置及びカメラ
JP4691990B2 (ja) * 2005-01-05 2011-06-01 ソニー株式会社 固体撮像装置及びその製造方法
JP4452199B2 (ja) 2005-02-25 2010-04-21 パナソニック株式会社 固体撮像装置およびその駆動方法
JP4783059B2 (ja) * 2005-05-13 2011-09-28 ローム株式会社 半導体装置及びこれを用いた光電変換装置、スキャナ
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
KR100766497B1 (ko) * 2005-10-05 2007-10-15 삼성전자주식회사 이미지 센서
KR100694461B1 (ko) * 2005-10-20 2007-03-12 매그나칩 반도체 유한회사 시모스 이미지센서
JP4961748B2 (ja) * 2006-01-13 2012-06-27 ソニー株式会社 固体撮像装置
JP4631723B2 (ja) 2006-01-27 2011-02-16 ソニー株式会社 固体撮像装置
KR20070093335A (ko) 2006-03-13 2007-09-18 마쯔시다덴기산교 가부시키가이샤 고체 촬상장치 및 그 구동방법
KR101255334B1 (ko) * 2006-05-08 2013-04-16 페어차일드코리아반도체 주식회사 저 열저항 파워 모듈 및 그 제조방법
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
JP4193874B2 (ja) * 2006-05-25 2008-12-10 ソニー株式会社 固体撮像装置とその製造方法、及びカメラモジュール
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
JP2008108917A (ja) * 2006-10-25 2008-05-08 Sony Corp 固体撮像装置及び電子機器
US7459668B2 (en) 2007-03-06 2008-12-02 Micron Technology, Inc. Method, apparatus, and system to reduce ground resistance in a pixel array
US20100110245A1 (en) * 2007-04-18 2010-05-06 Rosnes Corporation Solid-state imaging device
JP5116399B2 (ja) * 2007-08-07 2013-01-09 キヤノン株式会社 撮像装置、そのスミア補正方法、プログラムおよび記憶媒体
JP5111157B2 (ja) 2008-02-27 2012-12-26 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
JP5219555B2 (ja) * 2008-02-28 2013-06-26 キヤノン株式会社 撮像装置及び撮像装置を用いた撮像システム
US7807955B2 (en) * 2008-05-30 2010-10-05 Eastman Kodak Company Image sensor having reduced well bounce
JP5256874B2 (ja) * 2008-06-18 2013-08-07 ソニー株式会社 固体撮像素子およびカメラシステム
JP5517503B2 (ja) * 2009-06-24 2014-06-11 キヤノン株式会社 固体撮像装置
JP5564874B2 (ja) 2009-09-25 2014-08-06 ソニー株式会社 固体撮像装置、及び電子機器
US8106427B2 (en) * 2009-12-21 2012-01-31 Omnivision Technologies, Inc. Image sensor with well bounce correction
JP5538976B2 (ja) 2010-03-29 2014-07-02 ソニー株式会社 固体撮像素子、撮像装置
JP5377549B2 (ja) 2011-03-03 2013-12-25 株式会社東芝 固体撮像装置
US8669630B2 (en) 2011-03-04 2014-03-11 Societe Francaise de Detecteurs Infrarouges—Sofradir Detection matrix with improved biasing conditions and fabrication method
FR2972295B1 (fr) * 2011-03-04 2013-07-19 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
FR2972296B1 (fr) * 2011-03-04 2013-11-15 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection a conditions de polarisation ameliorees et procede de fabrication
US8686477B2 (en) * 2012-07-25 2014-04-01 Omnivision Technologies, Inc. Ground contact structure for a low dark current CMOS pixel cell
JP5962533B2 (ja) * 2013-02-13 2016-08-03 ソニー株式会社 固体撮像素子、駆動方法、および撮像装置
JP6162999B2 (ja) * 2013-04-15 2017-07-12 キヤノン株式会社 固体撮像装置およびカメラ
JP6226682B2 (ja) * 2013-10-09 2017-11-08 キヤノン株式会社 撮像装置およびその製造方法
JP6274897B2 (ja) * 2014-02-13 2018-02-07 キヤノン株式会社 撮像素子及び撮像素子の駆動方法
JP6752585B2 (ja) 2016-02-19 2020-09-09 キヤノン株式会社 撮像装置、撮像システム
JP6581621B2 (ja) * 2017-06-19 2019-09-25 キヤノン株式会社 固体撮像装置およびカメラ

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* Cited by examiner, † Cited by third party
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JPH0821704B2 (ja) 1986-03-07 1996-03-04 株式会社日立製作所 固体撮像素子
JPH06339081A (ja) 1993-05-28 1994-12-06 Sony Corp 固体撮像素子の駆動方法
JPH08190106A (ja) * 1995-01-10 1996-07-23 Victor Co Of Japan Ltd アクティブマトリクス装置及びその駆動方法
JP3180748B2 (ja) * 1997-12-11 2001-06-25 日本電気株式会社 固体撮像装置
US6948843B2 (en) 1998-10-28 2005-09-27 Covaris, Inc. Method and apparatus for acoustically controlling liquid solutions in microfluidic devices
JP2001218073A (ja) 1999-10-14 2001-08-10 Hitachi Kokusai Electric Inc 画像信号処理方法およびその方法を用いた画像信号処理装置およびその方法の手順を表すプログラムコードを記録した記録媒体
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
JP2001332714A (ja) 2000-05-22 2001-11-30 Canon Inc 固体撮像装置
JP4130307B2 (ja) * 2001-01-15 2008-08-06 Ｎｅｃエレクトロニクス株式会社 固体撮像装置
JP3759435B2 (ja) * 2001-07-11 2006-03-22 ソニー株式会社 Ｘ−ｙアドレス型固体撮像素子
JP3530159B2 (ja) * 2001-08-22 2004-05-24 松下電器産業株式会社 固体撮像装置およびその製造方法
US20030038336A1 (en) * 2001-08-22 2003-02-27 Mann Richard A. Semiconductor device for isolating a photodiode to reduce junction leakage and method of formation
TW510588U (en) * 2001-11-21 2002-11-11 Molex Inc Electrical connector
JP2003258230A (ja) 2002-02-28 2003-09-12 Canon Inc 半導体装置及び半導体撮像装置
US6903394B2 (en) * 2002-11-27 2005-06-07 Micron Technology, Inc. CMOS imager with improved color response
JP4075773B2 (ja) * 2003-11-05 2008-04-16 ソニー株式会社 固体撮像装置
JP4319166B2 (ja) * 2005-05-12 2009-08-26 タイコエレクトロニクスアンプ株式会社 遊動型コネクタ

Also Published As

Publication number Publication date
TWI247422B (en) 2006-01-11
KR20050043654A (ko) 2005-05-11
KR101158915B1 (ko) 2012-06-21
US7485903B2 (en) 2009-02-03
USRE45891E1 (en) 2016-02-16
EP1530239A2 (de) 2005-05-11
EP2254154A1 (de) 2010-11-24
JP2005142251A (ja) 2005-06-02
CN1674295A (zh) 2005-09-28
EP2254154B1 (de) 2012-09-19
CN101232035B (zh) 2010-12-22
JP4075773B2 (ja) 2008-04-16
EP1530239A3 (de) 2006-11-02
TW200527662A (en) 2005-08-16
US7804116B2 (en) 2010-09-28
US20080067565A1 (en) 2008-03-20
US20050116251A1 (en) 2005-06-02
US20080210947A1 (en) 2008-09-04
EP1530239B1 (de) 2011-04-06
US7816711B2 (en) 2010-10-19
US20160141319A1 (en) 2016-05-19
CN101232035A (zh) 2008-07-30
CN100568517C (zh) 2009-12-09

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