JP2005142251A - 固体撮像装置 - Google Patents
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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Abstract
【解決手段】画素ごとにウェルコンタクトを取る構成の固体撮像装置において、画素20の光電変換素子21やトランジスタ22〜25が形成されるウェルを一定電位に固定するウェルコンタクト領域55を、光電変換素子21と同じ活性化領域42に作り込むことにより、従来素子分離領域に要していた部分を光電変換素子21の活性化領域42に割り当てて、ウェルコンタクト領域55を設けることによって生じる画素特性の低下を最小限に抑えるようにする。
【選択図】図3
Description
・P型不純物領域でN型不純物領域を覆って形成するタイプの光電変換素子では、画素アレイ部の中央と周辺でP型不純物領域の電位レベルが異なるために、その飽和レベルにも差が現れる。
・各画素を駆動する際に、駆動される画素内の画素出力線等が接続されている拡散層の電位が変動すると、拡散層-ウェル間の結合容量によりウェルの電位自体も変動を起こすため、一度に全画素を駆動するときや画素数自体が多い場合に、画素アレイ部の中央付近のウェル電位の押さえが電気的に弱いところでは、結合容量によるウェル電位の変動が無視できなくなってくる。
本発明の第1実施形態では、図1に示す構成のCMOSイメージセンサ等の固体撮像装置において、画素アレイ部11の各画素ごとに、光電変換素子を形成した活性化領域と同じ領域でウェルコンタクトを取ることにより、単位画素当たりの面積(画素のサイズ)の増加を最小限に抑えつつ、ウェル電位の変動による出力信号のシェーディングを抑えるようにしたことを特徴としている。
本発明の第2実施形態では、図1に示す構成のCMOSイメージセンサ等の固体撮像装置において、画素ごとではなく、隣接する複数の画素に対して一つの割合でウェルコンタクトを取ることにより、画素の特性、具体的には飽和レベルや感度等の低下を抑えるようにしたことを特徴としている。以下に、具体的な実施例について説明する。
図5は、第2実施形態の実施例1に係る画素アレイ部11Aの構成の概略を示す平面図である。ここでは、図面の簡略化のために、画素アレイ部11Aが5行6列の画素配列の場合を例に挙げて説明するものとする。
図8は、第2実施形態の実施例2に係る画素アレイ部11Bの構成の概略を示す平面図であり、図中、図5と同等部分には同一符号を付して示している。ここでも、図面の簡略化のために、画素アレイ部11Bが5行6列の画素配列の場合を例に挙げて説明するものとする。
図9は、第2実施形態の実施例3に係る画素アレイ部11Cの構成の概略を示す平面図であり、図中、図5と同等部分には同一符号を付して示している。ここでも、図面の簡略化のために、画素アレイ部11Cが5行6列の画素配列の場合を例に挙げて説明するものとする。
Claims (7)
- 光電変換素子と、前記光電変換素子で光電変換された信号を読み出す読み出し手段と、前記読み出し手段によって読み出された信号を増幅する増幅手段とを含む画素が、ウェル内に2次元アレイ状に配置されてなる画素アレイ部と、
前記画素ごとに前記光電変換素子と同じ活性化領域に設けられ、前記ウェルを電気的に一定電位に固定するウェル電位固定手段と
を備えたことを特徴とする固体撮像装置。 - 前記光電変換素子は、第1導電型の第1の不純物領域と、当該第1の不純物領域の上に設けられた第2導電型の第2の不純物領域とを有し、
前記ウェル電位固定手段は、前記第2の不純物領域よりも濃度の濃い第2導電型の不純物領域を有する
ことを特徴とする請求項1記載の固体撮像装置。 - 光電変換素子と、前記光電変換素子で光電変換された信号を読み出す読み出し手段と、前記読み出し手段によって読み出された信号を増幅する増幅手段とを含む画素が、ウェル内に2次元アレイ状に配置されてなる画素アレイ部と、
前記画素アレイ部内に複数の画素ごとに一つの割合で設けられ、前記ウェルを電気的に一定電位に固定するウェル電位固定手段と
を備えたことを特徴とする固体撮像装置。 - 前記ウェル電位固定手段が設けられた画素の信号、または当該画素の属する画素列または画素行の信号に対して画素特性の補正を行う信号処理手段を備えた
ことを特徴とする請求項3記載の固体撮像装置。 - 前記ウェル電位固定手段は、前記複数の画素内の一つの画素に代えて設けられている
ことを特徴とする請求項3記載の固体撮像装置。 - 前記ウェル電位固定手段が設けられた前記一つの画素の情報を、当該画素の周りの画素の情報に基づいて生成する信号処理手段を備えた
ことを特徴とする請求項5記載の固体撮像装置。 - 前記周りの画素は、前記一つの画素と同じ行に属する画素、前記一つの画素と同じ列に属する画素、または前記一つの画素と同じ行および列に属する画素である
ことを特徴とする請求項6記載の固体撮像装置。
Priority Applications (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003375202A JP4075773B2 (ja) | 2003-11-05 | 2003-11-05 | 固体撮像装置 |
US10/979,707 US7485903B2 (en) | 2003-11-05 | 2004-11-02 | Solid-state imaging device |
DE602004032102T DE602004032102D1 (de) | 2003-11-05 | 2004-11-03 | Festkörperbildsensor |
EP04026091A EP1530239B1 (en) | 2003-11-05 | 2004-11-03 | Solid-state imaging device |
EP10009087A EP2254154B1 (en) | 2003-11-05 | 2004-11-03 | Solid-state imaging device |
KR1020040089123A KR101158915B1 (ko) | 2003-11-05 | 2004-11-04 | 고체 촬상 장치 및 모듈 타입의 촬상 장치 |
CN2008100814752A CN101232035B (zh) | 2003-11-05 | 2004-11-05 | 固态成像器件 |
TW093133895A TWI247422B (en) | 2003-11-05 | 2004-11-05 | Solid-state camera |
CNB2004101037917A CN100568517C (zh) | 2003-11-05 | 2004-11-05 | 固态成像器件 |
US11/824,088 US7816711B2 (en) | 2003-11-05 | 2007-06-29 | Solid-state imaging device |
US11/981,002 US7804116B2 (en) | 2003-11-05 | 2007-10-30 | Solid-state imaging device |
US13/631,397 USRE45891E1 (en) | 2003-11-05 | 2012-09-28 | Solid state imaging device |
US15/004,193 US20160141319A1 (en) | 2003-11-05 | 2016-01-22 | Solid state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003375202A JP4075773B2 (ja) | 2003-11-05 | 2003-11-05 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005142251A true JP2005142251A (ja) | 2005-06-02 |
JP4075773B2 JP4075773B2 (ja) | 2008-04-16 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003375202A Expired - Lifetime JP4075773B2 (ja) | 2003-11-05 | 2003-11-05 | 固体撮像装置 |
Country Status (7)
Country | Link |
---|---|
US (5) | US7485903B2 (ja) |
EP (2) | EP2254154B1 (ja) |
JP (1) | JP4075773B2 (ja) |
KR (1) | KR101158915B1 (ja) |
CN (2) | CN101232035B (ja) |
DE (1) | DE602004032102D1 (ja) |
TW (1) | TWI247422B (ja) |
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JP4075773B2 (ja) * | 2003-11-05 | 2008-04-16 | ソニー株式会社 | 固体撮像装置 |
JP4319166B2 (ja) * | 2005-05-12 | 2009-08-26 | タイコエレクトロニクスアンプ株式会社 | 遊動型コネクタ |
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2003
- 2003-11-05 JP JP2003375202A patent/JP4075773B2/ja not_active Expired - Lifetime
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2004
- 2004-11-02 US US10/979,707 patent/US7485903B2/en active Active
- 2004-11-03 DE DE602004032102T patent/DE602004032102D1/de active Active
- 2004-11-03 EP EP10009087A patent/EP2254154B1/en active Active
- 2004-11-03 EP EP04026091A patent/EP1530239B1/en active Active
- 2004-11-04 KR KR1020040089123A patent/KR101158915B1/ko active IP Right Grant
- 2004-11-05 CN CN2008100814752A patent/CN101232035B/zh active Active
- 2004-11-05 TW TW093133895A patent/TWI247422B/zh active
- 2004-11-05 CN CNB2004101037917A patent/CN100568517C/zh active Active
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- 2007-06-29 US US11/824,088 patent/US7816711B2/en not_active Expired - Fee Related
- 2007-10-30 US US11/981,002 patent/US7804116B2/en not_active Ceased
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2012
- 2012-09-28 US US13/631,397 patent/USRE45891E1/en active Active
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- 2016-01-22 US US15/004,193 patent/US20160141319A1/en not_active Abandoned
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WO2006018968A1 (ja) * | 2004-08-19 | 2006-02-23 | Matsushita Electric Industrial Co., Ltd. | 増幅型固体撮像装置 |
JP2006073737A (ja) * | 2004-09-01 | 2006-03-16 | Canon Inc | 固体撮像装置及びカメラ |
JP2007189085A (ja) * | 2006-01-13 | 2007-07-26 | Sony Corp | 固体撮像装置 |
JP2007201269A (ja) * | 2006-01-27 | 2007-08-09 | Sony Corp | 固体撮像装置 |
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JP4631723B2 (ja) * | 2006-01-27 | 2011-02-16 | ソニー株式会社 | 固体撮像装置 |
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JP2009044319A (ja) * | 2007-08-07 | 2009-02-26 | Canon Inc | 撮像装置、そのスミア補正方法、プログラムおよび記憶媒体 |
JP2009206260A (ja) * | 2008-02-27 | 2009-09-10 | Canon Inc | 光電変換装置及び光電変換装置を用いた撮像システム |
US8013369B2 (en) | 2008-02-27 | 2011-09-06 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and imaging system using photoelectric conversion apparatus |
JP2009206941A (ja) * | 2008-02-28 | 2009-09-10 | Canon Inc | 撮像装置及び撮像装置を用いた撮像システム |
USRE46660E1 (en) | 2011-03-03 | 2018-01-02 | Kabushiki Kaisha Toshiba | Solid state imaging apparatus with a shared drain diffusion layer by adjacent cells |
US8760546B2 (en) | 2011-03-03 | 2014-06-24 | Kabushiki Kaisha Toshiba | Solid state imaging apparatus with a shared drain diffusion layer by adjacent cells |
JP2012186476A (ja) * | 2011-03-04 | 2012-09-27 | Societe Francaise De Detecteurs Infrarouges Sofradir | バイアス条件が改良された検出マトリクス及び製造方法 |
JP2014207390A (ja) * | 2013-04-15 | 2014-10-30 | キヤノン株式会社 | 固体撮像装置およびカメラ |
US9881950B2 (en) | 2013-04-15 | 2018-01-30 | Canon Kabushiki Kaisha | Solid-state image sensor and camera with light-shielding portions and amplification transistors |
JP2015076532A (ja) * | 2013-10-09 | 2015-04-20 | キヤノン株式会社 | 撮像装置およびその製造方法 |
JP2015154188A (ja) * | 2014-02-13 | 2015-08-24 | キヤノン株式会社 | 撮像素子及び撮像素子の駆動方法 |
US10115754B2 (en) | 2016-02-19 | 2018-10-30 | Canon Kabushiki Kaisha | Image pickup device and image pickup system |
JP2017199923A (ja) * | 2017-06-19 | 2017-11-02 | キヤノン株式会社 | 固体撮像装置およびカメラ |
Also Published As
Publication number | Publication date |
---|---|
CN100568517C (zh) | 2009-12-09 |
KR101158915B1 (ko) | 2012-06-21 |
US7485903B2 (en) | 2009-02-03 |
CN101232035B (zh) | 2010-12-22 |
CN101232035A (zh) | 2008-07-30 |
TW200527662A (en) | 2005-08-16 |
US7816711B2 (en) | 2010-10-19 |
US20160141319A1 (en) | 2016-05-19 |
US7804116B2 (en) | 2010-09-28 |
EP1530239A2 (en) | 2005-05-11 |
EP2254154A1 (en) | 2010-11-24 |
DE602004032102D1 (de) | 2011-05-19 |
TWI247422B (en) | 2006-01-11 |
JP4075773B2 (ja) | 2008-04-16 |
EP1530239A3 (en) | 2006-11-02 |
US20080210947A1 (en) | 2008-09-04 |
CN1674295A (zh) | 2005-09-28 |
US20050116251A1 (en) | 2005-06-02 |
USRE45891E1 (en) | 2016-02-16 |
EP2254154B1 (en) | 2012-09-19 |
EP1530239B1 (en) | 2011-04-06 |
US20080067565A1 (en) | 2008-03-20 |
KR20050043654A (ko) | 2005-05-11 |
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