JP5517503B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP5517503B2 JP5517503B2 JP2009149804A JP2009149804A JP5517503B2 JP 5517503 B2 JP5517503 B2 JP 5517503B2 JP 2009149804 A JP2009149804 A JP 2009149804A JP 2009149804 A JP2009149804 A JP 2009149804A JP 5517503 B2 JP5517503 B2 JP 5517503B2
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- 238000003384 imaging method Methods 0.000 title claims description 17
- 230000003321 amplification Effects 0.000 claims description 40
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 239000012535 impurity Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
102 転送スイッチ
103 リセットトランジスタ
104 増幅トランジスタ
105 選択トランジスタ
11 選択トランジスタのドレイン領域
12 選択トランジスタのソース領域
6 ウエルコンタクト領域
9 リセットトランジスタのドレイン領域
Claims (4)
- 複数の光電変換素子と、前記複数の光電変換素子で生じた信号電荷に基づく信号を増幅する一つの増幅トランジスタと、前記増幅トランジスタの入力部の電位をリセット電位に設定するリセットトランジスタと、前記増幅トランジスタと直列に接続され、該増幅トランジスタで増幅された信号を選択して読み出す選択トランジスタと、を含む単位セルが行列状に配列された画素領域と、
前記画素領域内に配され、前記増幅トランジスタ、リセットトランジスタ、選択トランジスタのチャネル部を提供するウエルに基準電圧を供給するための、複数のウエルコンタクト領域とを有する固体撮像装置であって、
前記ウエルコンタクト領域はその下部にチャネルストップ領域が配された素子分離領域を介して、前記リセットトランジスタのドレイン領域と隣接して配され、
前記リセットトランジスタのソース領域及びドレイン領域のうち少なくともドレイン領域の不純物濃度は、前記選択トランジスタのソース及びドレイン領域の不純物濃度よりも低いことを特徴とする固体撮像装置。 - 前記増幅トランジスタの入力部は、前記増幅トランジスタのゲート及び該ゲートに接続された第1導電型のフローティングディフュージョン領域を含んで構成され、前記フローティングディフュージョン領域の不純物濃度は、前記選択トランジスタのソース領域及びドレイン領域の不純物濃度よりも低いこと特徴とする請求項1に記載の固体撮像装置。
- 前記選択トランジスタはLDD構造を有しており、前記リセットトランジスタのドレイン領域は、前記LDD構造を構成するドレイン領域の高濃度の半導体領域の不純物濃度よりも低いことを特徴とする請求項1又は2に記載の固体撮像装置。
- 前記ウエルコンタクト領域は、第1の画素列に含まれる第1の単位セルのリセットトランジスタのドレイン領域と素子分離領域を介して隣接し、且つ、前記第1の画素列に隣接する第2の画素列に含まれる第2の単位セルのリセットトランジスタのソース領域と素子分離領域を介して隣接することを特徴とする請求項1〜3のいずれか1項に記載の固体撮像装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009149804A JP5517503B2 (ja) | 2009-06-24 | 2009-06-24 | 固体撮像装置 |
CN2010102095205A CN101931759B (zh) | 2009-06-24 | 2010-06-21 | 固态成像装置 |
US12/819,916 US8217330B2 (en) | 2009-06-24 | 2010-06-21 | Solid-state imaging apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009149804A JP5517503B2 (ja) | 2009-06-24 | 2009-06-24 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011009354A JP2011009354A (ja) | 2011-01-13 |
JP5517503B2 true JP5517503B2 (ja) | 2014-06-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009149804A Active JP5517503B2 (ja) | 2009-06-24 | 2009-06-24 | 固体撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8217330B2 (ja) |
JP (1) | JP5517503B2 (ja) |
CN (1) | CN101931759B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5564874B2 (ja) * | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
WO2012147302A1 (ja) * | 2011-04-28 | 2012-11-01 | パナソニック株式会社 | 固体撮像装置及びそれを用いたカメラシステム |
JP5954983B2 (ja) | 2011-12-21 | 2016-07-20 | キヤノン株式会社 | 撮像装置及び放射線撮像システム、並びに撮像装置の製造方法 |
JP5985269B2 (ja) * | 2012-06-26 | 2016-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6532265B2 (ja) * | 2015-04-02 | 2019-06-19 | キヤノン株式会社 | 撮像装置 |
EP3445042B1 (en) * | 2016-04-15 | 2021-03-31 | Sony Corporation | Solid-state imaging element, electronic device and control method for solid-state imaging element |
WO2022118617A1 (ja) * | 2020-12-02 | 2022-06-09 | パナソニックIpマネジメント株式会社 | 撮像装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI289905B (en) * | 2002-07-23 | 2007-11-11 | Fujitsu Ltd | Image sensor and image sensor module |
JP4075773B2 (ja) * | 2003-11-05 | 2008-04-16 | ソニー株式会社 | 固体撮像装置 |
JP4424120B2 (ja) * | 2004-08-31 | 2010-03-03 | ソニー株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
JP4971586B2 (ja) | 2004-09-01 | 2012-07-11 | キヤノン株式会社 | 固体撮像装置 |
JP4916101B2 (ja) * | 2004-09-01 | 2012-04-11 | キヤノン株式会社 | 光電変換装置、固体撮像装置及び固体撮像システム |
JP2006073736A (ja) * | 2004-09-01 | 2006-03-16 | Canon Inc | 光電変換装置、固体撮像装置及び固体撮像システム |
JP4604621B2 (ja) | 2004-09-15 | 2011-01-05 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP4844032B2 (ja) * | 2005-07-21 | 2011-12-21 | 株式会社ニコン | 撮像装置 |
JP5110820B2 (ja) | 2006-08-02 | 2012-12-26 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
JP4350768B2 (ja) * | 2007-04-16 | 2009-10-21 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
JP5104036B2 (ja) * | 2007-05-24 | 2012-12-19 | ソニー株式会社 | 固体撮像素子とその製造方法及び撮像装置 |
-
2009
- 2009-06-24 JP JP2009149804A patent/JP5517503B2/ja active Active
-
2010
- 2010-06-21 CN CN2010102095205A patent/CN101931759B/zh active Active
- 2010-06-21 US US12/819,916 patent/US8217330B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101931759A (zh) | 2010-12-29 |
JP2011009354A (ja) | 2011-01-13 |
CN101931759B (zh) | 2012-12-12 |
US20100327149A1 (en) | 2010-12-30 |
US8217330B2 (en) | 2012-07-10 |
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