FR2945667B1 - Capteur d'image integre a tres grande sensibilite. - Google Patents
Capteur d'image integre a tres grande sensibilite.Info
- Publication number
- FR2945667B1 FR2945667B1 FR0953192A FR0953192A FR2945667B1 FR 2945667 B1 FR2945667 B1 FR 2945667B1 FR 0953192 A FR0953192 A FR 0953192A FR 0953192 A FR0953192 A FR 0953192A FR 2945667 B1 FR2945667 B1 FR 2945667B1
- Authority
- FR
- France
- Prior art keywords
- image sensor
- high sensitivity
- integrated image
- integrated
- sensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000035945 sensitivity Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0953192A FR2945667B1 (fr) | 2009-05-14 | 2009-05-14 | Capteur d'image integre a tres grande sensibilite. |
US13/319,782 US20120119264A1 (en) | 2009-05-14 | 2010-05-11 | Built-in very high sensitivity image sensor |
EP10731767A EP2430659A1 (fr) | 2009-05-14 | 2010-05-11 | Capteur d'image integre a tres grande sensibilite |
JP2012510344A JP2012527106A (ja) | 2009-05-14 | 2010-05-11 | 内蔵式超高感度画像センサ |
PCT/FR2010/050919 WO2010130950A1 (fr) | 2009-05-14 | 2010-05-11 | Capteur d'image integre a tres grande sensibilite |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0953192A FR2945667B1 (fr) | 2009-05-14 | 2009-05-14 | Capteur d'image integre a tres grande sensibilite. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2945667A1 FR2945667A1 (fr) | 2010-11-19 |
FR2945667B1 true FR2945667B1 (fr) | 2011-12-16 |
Family
ID=41381729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0953192A Expired - Fee Related FR2945667B1 (fr) | 2009-05-14 | 2009-05-14 | Capteur d'image integre a tres grande sensibilite. |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120119264A1 (fr) |
EP (1) | EP2430659A1 (fr) |
JP (1) | JP2012527106A (fr) |
FR (1) | FR2945667B1 (fr) |
WO (1) | WO2010130950A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5660959B2 (ja) * | 2011-03-31 | 2015-01-28 | 本田技研工業株式会社 | 受光装置 |
JP5635938B2 (ja) | 2011-03-31 | 2014-12-03 | 本田技研工業株式会社 | 固体撮像装置 |
JP5829036B2 (ja) | 2011-03-31 | 2015-12-09 | 本田技研工業株式会社 | 単位画素の信号加算方法 |
JP5573978B2 (ja) * | 2012-02-09 | 2014-08-20 | 株式会社デンソー | 固体撮像素子およびその駆動方法 |
CN112864183B (zh) * | 2021-01-18 | 2023-08-25 | 上海集成电路装备材料产业创新中心有限公司 | 一种改善传输迟滞的像元结构 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6278142B1 (en) * | 1999-08-30 | 2001-08-21 | Isetex, Inc | Semiconductor image intensifier |
US20050029553A1 (en) * | 2003-08-04 | 2005-02-10 | Jaroslav Hynecek | Clocked barrier virtual phase charge coupled device image sensor |
JP4212623B2 (ja) * | 2006-01-31 | 2009-01-21 | 三洋電機株式会社 | 撮像装置 |
US7755685B2 (en) * | 2007-09-28 | 2010-07-13 | Sarnoff Corporation | Electron multiplication CMOS imager |
JP2009135242A (ja) * | 2007-11-30 | 2009-06-18 | Sanyo Electric Co Ltd | 撮像装置 |
FR2924862B1 (fr) * | 2007-12-10 | 2010-08-13 | Commissariat Energie Atomique | Dispositif microelectronique photosensible avec multiplicateurs par avalanche |
-
2009
- 2009-05-14 FR FR0953192A patent/FR2945667B1/fr not_active Expired - Fee Related
-
2010
- 2010-05-11 EP EP10731767A patent/EP2430659A1/fr not_active Withdrawn
- 2010-05-11 JP JP2012510344A patent/JP2012527106A/ja active Pending
- 2010-05-11 WO PCT/FR2010/050919 patent/WO2010130950A1/fr active Application Filing
- 2010-05-11 US US13/319,782 patent/US20120119264A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2010130950A1 (fr) | 2010-11-18 |
FR2945667A1 (fr) | 2010-11-19 |
EP2430659A1 (fr) | 2012-03-21 |
JP2012527106A (ja) | 2012-11-01 |
US20120119264A1 (en) | 2012-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2930676B1 (fr) | Capteur d'image de tres faibles dimensions | |
FR2914756B1 (fr) | Capteur multi-tactile transparent. | |
DE602006012799D1 (de) | Bilderfassungsvorrichtung mit Distanzmessfunktion | |
FR2895377B1 (fr) | Conditionnement avec capteur integre | |
FR2949008B1 (fr) | Dispositif de detection capacitif a integration de fonctions. | |
FR2951826B1 (fr) | Capteur a detection piezoresistive dans le plan | |
SE0801894L (sv) | Sensoranordning | |
DE602007013162D1 (de) | Verformungssensor | |
FR2939920B1 (fr) | Capteur matriciel | |
FR2959901B1 (fr) | Capteur d'image a matrice d'echantillonneurs | |
DE602006009516D1 (de) | Kapazitiver pegelsensor mit mehreren jeweils einenten | |
FR2942316B1 (fr) | Capteur de force de contact | |
FR2948436B1 (fr) | Capteur optoelectronique | |
DE112010002180T8 (de) | Luft-Kraftstoff-Verhältnis-Sensor | |
FR2932563B1 (fr) | Capteur de rotation inertiel a derive compensee. | |
DE112008001742A5 (de) | Sensoranordnung | |
FR2950964B1 (fr) | Capteur de position lineaire | |
FR2953642B1 (fr) | Capteur d'image multilineaire a integration de charges. | |
FR2942660B1 (fr) | Dispositif capteur a base de nanofils | |
FR2948455B1 (fr) | Dispositif de capteur de pression | |
FR2945667B1 (fr) | Capteur d'image integre a tres grande sensibilite. | |
BRPI1015364A2 (pt) | medição e leitura do tamanho de um parâmentro de um dispositivo posicionado remotamente. | |
FR2945666B1 (fr) | Capteur d'image. | |
FR2947619B1 (fr) | Capteur solaire autoorientable | |
FR2918795B1 (fr) | Capteur d'images a sensibilite amelioree. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20150130 |