FR2945667B1 - Capteur d'image integre a tres grande sensibilite. - Google Patents

Capteur d'image integre a tres grande sensibilite.

Info

Publication number
FR2945667B1
FR2945667B1 FR0953192A FR0953192A FR2945667B1 FR 2945667 B1 FR2945667 B1 FR 2945667B1 FR 0953192 A FR0953192 A FR 0953192A FR 0953192 A FR0953192 A FR 0953192A FR 2945667 B1 FR2945667 B1 FR 2945667B1
Authority
FR
France
Prior art keywords
image sensor
high sensitivity
integrated image
integrated
sensitivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0953192A
Other languages
English (en)
Other versions
FR2945667A1 (fr
Inventor
Yvon Cazaux
Benoit Giffard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0953192A priority Critical patent/FR2945667B1/fr
Priority to US13/319,782 priority patent/US20120119264A1/en
Priority to EP10731767A priority patent/EP2430659A1/fr
Priority to JP2012510344A priority patent/JP2012527106A/ja
Priority to PCT/FR2010/050919 priority patent/WO2010130950A1/fr
Publication of FR2945667A1 publication Critical patent/FR2945667A1/fr
Application granted granted Critical
Publication of FR2945667B1 publication Critical patent/FR2945667B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H01L27/14818—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14843—Interline transfer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR0953192A 2009-05-14 2009-05-14 Capteur d'image integre a tres grande sensibilite. Expired - Fee Related FR2945667B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0953192A FR2945667B1 (fr) 2009-05-14 2009-05-14 Capteur d'image integre a tres grande sensibilite.
US13/319,782 US20120119264A1 (en) 2009-05-14 2010-05-11 Built-in very high sensitivity image sensor
EP10731767A EP2430659A1 (fr) 2009-05-14 2010-05-11 Capteur d'image integre a tres grande sensibilite
JP2012510344A JP2012527106A (ja) 2009-05-14 2010-05-11 内蔵式超高感度画像センサ
PCT/FR2010/050919 WO2010130950A1 (fr) 2009-05-14 2010-05-11 Capteur d'image integre a tres grande sensibilite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0953192A FR2945667B1 (fr) 2009-05-14 2009-05-14 Capteur d'image integre a tres grande sensibilite.

Publications (2)

Publication Number Publication Date
FR2945667A1 FR2945667A1 (fr) 2010-11-19
FR2945667B1 true FR2945667B1 (fr) 2011-12-16

Family

ID=41381729

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0953192A Expired - Fee Related FR2945667B1 (fr) 2009-05-14 2009-05-14 Capteur d'image integre a tres grande sensibilite.

Country Status (5)

Country Link
US (1) US20120119264A1 (fr)
EP (1) EP2430659A1 (fr)
JP (1) JP2012527106A (fr)
FR (1) FR2945667B1 (fr)
WO (1) WO2010130950A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5660959B2 (ja) * 2011-03-31 2015-01-28 本田技研工業株式会社 受光装置
JP5635938B2 (ja) 2011-03-31 2014-12-03 本田技研工業株式会社 固体撮像装置
JP5829036B2 (ja) 2011-03-31 2015-12-09 本田技研工業株式会社 単位画素の信号加算方法
JP5573978B2 (ja) * 2012-02-09 2014-08-20 株式会社デンソー 固体撮像素子およびその駆動方法
CN112864183B (zh) * 2021-01-18 2023-08-25 上海集成电路装备材料产业创新中心有限公司 一种改善传输迟滞的像元结构

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278142B1 (en) * 1999-08-30 2001-08-21 Isetex, Inc Semiconductor image intensifier
US20050029553A1 (en) * 2003-08-04 2005-02-10 Jaroslav Hynecek Clocked barrier virtual phase charge coupled device image sensor
JP4212623B2 (ja) * 2006-01-31 2009-01-21 三洋電機株式会社 撮像装置
US7755685B2 (en) * 2007-09-28 2010-07-13 Sarnoff Corporation Electron multiplication CMOS imager
JP2009135242A (ja) * 2007-11-30 2009-06-18 Sanyo Electric Co Ltd 撮像装置
FR2924862B1 (fr) * 2007-12-10 2010-08-13 Commissariat Energie Atomique Dispositif microelectronique photosensible avec multiplicateurs par avalanche

Also Published As

Publication number Publication date
WO2010130950A1 (fr) 2010-11-18
FR2945667A1 (fr) 2010-11-19
EP2430659A1 (fr) 2012-03-21
JP2012527106A (ja) 2012-11-01
US20120119264A1 (en) 2012-05-17

Similar Documents

Publication Publication Date Title
FR2930676B1 (fr) Capteur d'image de tres faibles dimensions
FR2914756B1 (fr) Capteur multi-tactile transparent.
DE602006012799D1 (de) Bilderfassungsvorrichtung mit Distanzmessfunktion
FR2895377B1 (fr) Conditionnement avec capteur integre
FR2949008B1 (fr) Dispositif de detection capacitif a integration de fonctions.
FR2951826B1 (fr) Capteur a detection piezoresistive dans le plan
SE0801894L (sv) Sensoranordning
DE602007013162D1 (de) Verformungssensor
FR2939920B1 (fr) Capteur matriciel
FR2959901B1 (fr) Capteur d'image a matrice d'echantillonneurs
DE602006009516D1 (de) Kapazitiver pegelsensor mit mehreren jeweils einenten
FR2942316B1 (fr) Capteur de force de contact
FR2948436B1 (fr) Capteur optoelectronique
DE112010002180T8 (de) Luft-Kraftstoff-Verhältnis-Sensor
FR2932563B1 (fr) Capteur de rotation inertiel a derive compensee.
DE112008001742A5 (de) Sensoranordnung
FR2950964B1 (fr) Capteur de position lineaire
FR2953642B1 (fr) Capteur d'image multilineaire a integration de charges.
FR2942660B1 (fr) Dispositif capteur a base de nanofils
FR2948455B1 (fr) Dispositif de capteur de pression
FR2945667B1 (fr) Capteur d'image integre a tres grande sensibilite.
BRPI1015364A2 (pt) medição e leitura do tamanho de um parâmentro de um dispositivo posicionado remotamente.
FR2945666B1 (fr) Capteur d'image.
FR2947619B1 (fr) Capteur solaire autoorientable
FR2918795B1 (fr) Capteur d'images a sensibilite amelioree.

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150130