TWI427763B - 具有低串音之ｐ型金屬氧化半導體像素結構 - Google Patents

具有低串音之ｐ型金屬氧化半導體像素結構 Download PDF

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Publication number
TWI427763B
TWI427763B TW096114906A TW96114906A TWI427763B TW I427763 B TWI427763 B TW I427763B TW 096114906 A TW096114906 A TW 096114906A TW 96114906 A TW96114906 A TW 96114906A TW I427763 B TWI427763 B TW I427763B
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Taiwan
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layer
substrate
conductivity type
image sensor
type
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TW096114906A
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English (en)
Chinese (zh)
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TW200818461A (en
Inventor
Eric G Stevens
Hirofumi Komori
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Omnivision Tech Inc
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Publication of TW200818461A publication Critical patent/TW200818461A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW096114906A 2006-06-20 2007-04-27 具有低串音之ｐ型金屬氧化半導體像素結構 TWI427763B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/455,985 US7728277B2 (en) 2005-11-16 2006-06-20 PMOS pixel structure with low cross talk for active pixel image sensors

Publications (2)

Publication Number Publication Date
TW200818461A TW200818461A (en) 2008-04-16
TWI427763B true TWI427763B (zh) 2014-02-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114906A TWI427763B (zh) 2006-06-20 2007-04-27 具有低串音之ｐ型金屬氧化半導體像素結構

Country Status (7)

Country Link
US (2) US7728277B2 (enExample)
EP (1) EP2030240B1 (enExample)
JP (1) JP5295105B2 (enExample)
KR (1) KR101329432B1 (enExample)
CN (1) CN101473441B (enExample)
TW (1) TWI427763B (enExample)
WO (1) WO2007149137A1 (enExample)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4120453B2 (ja) 2003-04-18 2008-07-16 ソニー株式会社 固体撮像装置とその駆動制御方法
US8029186B2 (en) * 2004-11-05 2011-10-04 International Business Machines Corporation Method for thermal characterization under non-uniform heat load
US7348651B2 (en) * 2004-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pinned photodiode fabricated with shallow trench isolation
US7875916B2 (en) 2005-09-28 2011-01-25 Eastman Kodak Company Photodetector and n-layer structure for improved collection efficiency
US7633134B2 (en) * 2005-12-29 2009-12-15 Jaroslav Hynecek Stratified photodiode for high resolution CMOS image sensor implemented with STI technology
KR100901368B1 (ko) * 2006-03-07 2009-06-09 삼성전자주식회사 이미지 센서 및 그 제조 방법
US7675093B2 (en) 2006-11-28 2010-03-09 Micron Technology, Inc. Antiblooming imaging apparatus, system, and methods
US20080217659A1 (en) * 2007-03-06 2008-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Device and Method To Reduce Cross-Talk and Blooming For Image Sensors
US20090189232A1 (en) * 2008-01-28 2009-07-30 Micron Technology, Inc. Methods and apparatuses providing color filter patterns arranged to reduce the effect of crosstalk in image signals
US20090243025A1 (en) * 2008-03-25 2009-10-01 Stevens Eric G Pixel structure with a photodetector having an extended depletion depth
US8008695B2 (en) * 2008-05-29 2011-08-30 Omnivision Technologies, Inc. Image sensor with backside passivation and metal layer
US8048708B2 (en) 2008-06-25 2011-11-01 Micron Technology, Inc. Method and apparatus providing an imager module with a permanent carrier
FR2934926B1 (fr) * 2008-08-05 2011-01-21 St Microelectronics Sa Capteur d'images miniature.
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8384007B2 (en) * 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8229255B2 (en) * 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8299472B2 (en) * 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8269985B2 (en) * 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8889455B2 (en) * 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US20110115041A1 (en) * 2009-11-19 2011-05-19 Zena Technologies, Inc. Nanowire core-shell light pipes
US9515218B2 (en) * 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8519379B2 (en) * 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US20100304061A1 (en) * 2009-05-26 2010-12-02 Zena Technologies, Inc. Fabrication of high aspect ratio features in a glass layer by etching
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
KR101534544B1 (ko) * 2008-09-17 2015-07-08 삼성전자주식회사 에피 층을 갖는 픽셀 셀을 구비한 이미지 센서, 이를 포함하는 시스템, 및 픽셀 셀 형성 방법
KR101024815B1 (ko) * 2008-09-30 2011-03-24 주식회사 동부하이텍 이미지센서 및 그 제조방법
US8618458B2 (en) * 2008-11-07 2013-12-31 Omnivision Technologies, Inc. Back-illuminated CMOS image sensors
JP5282543B2 (ja) * 2008-11-28 2013-09-04 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
US20100140668A1 (en) * 2008-12-08 2010-06-10 Stevens Eric G Shallow trench isolation regions in image sensors
US20100148230A1 (en) * 2008-12-11 2010-06-17 Stevens Eric G Trench isolation regions in image sensors
US7838956B2 (en) * 2008-12-17 2010-11-23 Eastman Kodak Company Back illuminated sensor with low crosstalk
JP5375142B2 (ja) * 2009-02-05 2013-12-25 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
JP5451098B2 (ja) * 2009-02-06 2014-03-26 キヤノン株式会社 半導体装置の製造方法
JP2010206174A (ja) * 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびその製造方法ならびにカメラ
JP2015084425A (ja) * 2009-02-06 2015-04-30 キヤノン株式会社 光電変換装置およびその製造方法ならびにカメラ
JP2010206172A (ja) * 2009-02-06 2010-09-16 Canon Inc 撮像装置およびカメラ
JP2010206173A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置およびカメラ
JP5482025B2 (ja) * 2009-08-28 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
WO2011077580A1 (ja) 2009-12-26 2011-06-30 キヤノン株式会社 固体撮像装置および撮像システム
US8378398B2 (en) * 2010-09-30 2013-02-19 Omnivision Technologies, Inc. Photodetector isolation in image sensors
US20120083067A1 (en) * 2010-09-30 2012-04-05 Doan Hung Q Method for forming photodetector isolation in imagers
TWI426603B (zh) * 2010-12-01 2014-02-11 Himax Imaging Inc 互補式金屬氧化物半導體影像感測器之電洞型超深光二極體及其製程方法
US8101450B1 (en) * 2010-12-13 2012-01-24 Omnivision Technologies, Inc. Photodetector isolation in image sensors
CN102544031B (zh) * 2010-12-28 2016-03-30 英属开曼群岛商恒景科技股份有限公司 图像传感器的空穴型超深光二极管及其工艺方法
US8637800B2 (en) * 2011-04-19 2014-01-28 Altasens, Inc. Image sensor with hybrid heterostructure
JP5971565B2 (ja) * 2011-06-22 2016-08-17 パナソニックＩｐマネジメント株式会社 固体撮像装置
JP5999402B2 (ja) * 2011-08-12 2016-09-28 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2013077945A (ja) * 2011-09-30 2013-04-25 Sony Corp 画像処理装置、補正方法、並びに、撮像装置
US8652868B2 (en) * 2012-03-01 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Implanting method for forming photodiode
WO2014002365A1 (ja) * 2012-06-26 2014-01-03 パナソニック株式会社 固体撮像装置及びその製造方法
JP5985269B2 (ja) 2012-06-26 2016-09-06 ルネサスエレクトロニクス株式会社 半導体装置
US9287319B2 (en) * 2012-11-16 2016-03-15 Sri International CMOS multi-pinned (MP) pixel
NL2011905C2 (en) * 2013-12-06 2015-06-09 Photonis Netherlands B V Electron-bombarded image sensor device.
US9402039B2 (en) 2014-01-10 2016-07-26 Omnivision Technologies, Inc. Dual conversion gain high dynamic range sensor
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
JP2016149387A (ja) 2015-02-10 2016-08-18 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
US9876045B2 (en) 2015-05-06 2018-01-23 Cista System Corp. Back side illuminated CMOS image sensor arrays
US9881964B1 (en) * 2017-02-08 2018-01-30 Omnivision Technologies, Inc. Image sensor with inverted source follower
US10225498B2 (en) * 2017-05-16 2019-03-05 Bae Systems Information And Electronic Systems Integration Inc. pMOS/nMOS pixel design for night vision imaging sensor
KR102442444B1 (ko) 2017-10-27 2022-09-14 에스케이하이닉스 주식회사 N-형 포토다이오드 및 p-형 포토다이오드를 가진 이미지 센서
CN108257997A (zh) * 2017-12-07 2018-07-06 德淮半导体有限公司 像素单元及其制造方法以及成像装置
CN110690236A (zh) * 2019-09-16 2020-01-14 上海微阱电子科技有限公司 一种防漏电的深耗尽图像传感器像素单元结构及制作方法
IT202000018760A1 (it) * 2020-07-31 2022-01-31 Milano Politecnico Dispositivo sensore di radiazione elettromagnetica a doppio fotodiodo
CN115775811A (zh) * 2022-12-19 2023-03-10 上海韦尔半导体股份有限公司 一种基于p型光电二极管的垂直传输栅结构像素
CN120751288A (zh) * 2025-08-26 2025-10-03 上海盈方微电子有限公司 一种支持色温检测的cmos传感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142195A (en) * 1976-03-22 1979-02-27 Rca Corporation Schottky barrier semiconductor device and method of making same
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
US6512547B1 (en) * 1998-01-07 2003-01-28 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
US20040140491A1 (en) * 2003-01-16 2004-07-22 Howard Rhodes Deep implanted region for a cmos imager

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0048480B1 (en) 1980-09-19 1985-01-16 Nec Corporation Semiconductor photoelectric converter
DE4209536C3 (de) 1992-03-24 2000-10-05 Stuttgart Mikroelektronik Bildzelle für einen Bildaufnehmer-Chip
JPH09246514A (ja) 1996-03-12 1997-09-19 Sharp Corp 増幅型固体撮像装置
DE69738645T2 (de) 1996-05-22 2009-06-10 Eastman Kodak Co. Aktiver Pixelsensor mit Durchbruch-Rücksetzstruktur und Unterdrückung des Übersprechsignales
EP0883187A1 (en) 1997-06-04 1998-12-09 Interuniversitair Micro-Elektronica Centrum Vzw A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector
JP3359258B2 (ja) 1997-05-30 2002-12-24 キヤノン株式会社 光電変換装置及びそれを用いたイメージセンサ、画像読取装置
US6107655A (en) 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
US5898196A (en) 1997-10-10 1999-04-27 International Business Machines Corporation Dual EPI active pixel cell design and method of making the same
US6127697A (en) 1997-11-14 2000-10-03 Eastman Kodak Company CMOS image sensor
US6023081A (en) 1997-11-14 2000-02-08 Motorola, Inc. Semiconductor image sensor
US5952686A (en) 1997-12-03 1999-09-14 Hewlett-Packard Company Salient integration mode active pixel sensor
US5880495A (en) * 1998-01-08 1999-03-09 Omnivision Technologies, Inc. Active pixel with a pinned photodiode
JP3554483B2 (ja) * 1998-04-22 2004-08-18 シャープ株式会社 Ｃｍｏｓ型固体撮像装置
GB2339333B (en) 1998-06-29 2003-07-09 Hyundai Electronics Ind Photodiode having charge function and image sensor using the same
US6130422A (en) 1998-06-29 2000-10-10 Intel Corporation Embedded dielectric film for quantum efficiency enhancement in a CMOS imaging device
DE19933162B4 (de) 1999-07-20 2004-11-11 Institut für Mikroelektronik Stuttgart Stiftung des öffentlichen Rechts Bildzelle, Bildsensor und Herstellungsverfahren hierfür
US6950134B2 (en) 2000-02-22 2005-09-27 Innotech Corporation Method of preventing transfer and storage of non-optically generated charges in solid state imaging device
US6448596B1 (en) * 2000-08-15 2002-09-10 Innotech Corporation Solid-state imaging device
JP4109858B2 (ja) * 2001-11-13 2008-07-02 株式会社東芝 固体撮像装置
US7091536B2 (en) * 2002-11-14 2006-08-15 Micron Technology, Inc. Isolation process and structure for CMOS imagers
JP2004241578A (ja) * 2003-02-05 2004-08-26 Seiko Epson Corp 半導体装置およびその製造方法
JP3891126B2 (ja) 2003-02-21 2007-03-14 セイコーエプソン株式会社 固体撮像装置
JP2004259733A (ja) * 2003-02-24 2004-09-16 Seiko Epson Corp 固体撮像装置
JP2004319683A (ja) 2003-04-15 2004-11-11 Sharp Corp 固体撮像装置およびその駆動方法
JP2005109439A (ja) * 2003-09-09 2005-04-21 Seiko Epson Corp 固体撮像装置及びその製造方法
JP3829830B2 (ja) 2003-09-09 2006-10-04 セイコーエプソン株式会社 固体撮像装置及びその駆動方法
TWI241241B (en) * 2003-10-13 2005-10-11 Bobst Sa Blank diecutting machine
JP4439888B2 (ja) * 2003-11-27 2010-03-24 イノテック株式会社 Ｍｏｓ型固体撮像装置及びその駆動方法
US7253461B2 (en) * 2005-05-27 2007-08-07 Dialog Imaging Systems Gmbh Snapshot CMOS image sensor with high shutter rejection ratio
US7307327B2 (en) * 2005-08-04 2007-12-11 Micron Technology, Inc. Reduced crosstalk CMOS image sensors
US20080217716A1 (en) * 2007-03-09 2008-09-11 Mauritzson Richard A Imaging apparatus, method, and system having reduced dark current

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142195A (en) * 1976-03-22 1979-02-27 Rca Corporation Schottky barrier semiconductor device and method of making same
US6512547B1 (en) * 1998-01-07 2003-01-28 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
US20040140491A1 (en) * 2003-01-16 2004-07-22 Howard Rhodes Deep implanted region for a cmos imager

Also Published As

Publication number Publication date
US20100188545A1 (en) 2010-07-29
CN101473441B (zh) 2011-09-28
CN101473441A (zh) 2009-07-01
EP2030240A1 (en) 2009-03-04
WO2007149137A1 (en) 2007-12-27
US7728277B2 (en) 2010-06-01
KR20090023617A (ko) 2009-03-05
JP5295105B2 (ja) 2013-09-18
US20070108371A1 (en) 2007-05-17
TW200818461A (en) 2008-04-16
EP2030240B1 (en) 2015-08-26
JP2009541992A (ja) 2009-11-26
KR101329432B1 (ko) 2013-11-14

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