CN101467058A - 为用于集成电路的部件实现无源附着的方法和设备 - Google Patents
为用于集成电路的部件实现无源附着的方法和设备 Download PDFInfo
- Publication number
- CN101467058A CN101467058A CNA2007800219816A CN200780021981A CN101467058A CN 101467058 A CN101467058 A CN 101467058A CN A2007800219816 A CNA2007800219816 A CN A2007800219816A CN 200780021981 A CN200780021981 A CN 200780021981A CN 101467058 A CN101467058 A CN 101467058A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- sensor
- sensor according
- slit
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 81
- 238000005538 encapsulation Methods 0.000 claims description 23
- 230000010354 integration Effects 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 description 15
- 229920000647 polyepoxide Polymers 0.000 description 15
- 230000008569 process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 108091027981 Response element Proteins 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000005355 Hall effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 InGaAsP Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000010062 adhesion mechanism Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
- G01D11/24—Housings ; Casings for instruments
- G01D11/245—Housings for sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49589—Capacitor integral with or on the leadframe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Abstract
通过一定的方法和设备提供了具有耦合到引线框架的集成部件的传感器。在一个实施例中,所述传感器包括处于所述管芯的与所述集成元件相对的一侧上的外部引线。在另一实施例中,引线框架包括用于削弱涡流的狭缝。
Description
背景技术
用于半导体封装的技术是本领域公知的。一般而言,将管芯从晶片上切下,对其进行处理,并使之附着至引线框架。在集成电路(IC)封装的组装之后,可以将所述IC封装置于具有其他部件的电路板上,所述部件包括诸如电容器、电阻器和电感器的无源部件。这样的无源部件可以用于滤波等,其可能导致在传感器附近添加电路板,或者导致在可能存在的电路板上添加额外的“不动产”。
本领域公知,通常采用塑料或其他材料对集成电路(IC)进行包覆模制(overmold),以形成封装。这样的IC,例如,传感器经常需要将诸如电容器的外部部件耦合到所述IC,以实现适当操作。磁传感器(例如)可能需要去耦电容器来降低噪声以及增强EMC(电磁兼容性)。但是,所述外部部件需要在印刷电路板(PCB)上设置“不动产”,并且需要额外的处理步骤。
授予Chew等人的美国专利No.5973388公开了这样一种技术,其中,引线框架包括标志(flag)部分和具有将管芯连接至引线框架的引线键合的引线部分。对所述引线部分的内端进行蚀刻,以提供用于环氧化合物的锁定结构。之后将所述组件包封到环氧塑料化合物内。
授予Yasunaga等人的美国专利No.6563199公开了一种引线框架,其具有的引线带有用于容纳导线的凹陷,所述导线可以包含在树脂内,用于实现与半导体芯片的电连接。
授予Minamio等人的美国专利No.6642609公开了一种其引线带有连接盘(land)电极的引线框架。连接盘引线具有半切(half-cut)部分和连接盘部分,使所述连接盘部分发生倾斜,从而在树脂模制过程中使所述连接盘电极附着至用于避免树脂接触所述连接盘电极的密封薄板。
授予Liu等人的美国专利No.6713836公开了一种包括引线框架的封装结构,所述引线框架具有引线和能够向其键合芯片的管芯焊盘。在接触焊盘之间安装无源器件。键合线连接所述芯片、无源器件和引线,所有的这些部件均被包封。
Hsu等人的美国专利申请公开文本No.US2005/0035448公开了一种芯片封装结构,其包括载体、管芯、无源部件和导线。将所述无源部件的电极通过相应的导线耦合到电源和地。
附图说明
通过下文结合附图给出的详细说明将更为充分地理解文中给出的示范性实施例,其中:
图1是根据本发明的示范性实施例的具有集成电容器的传感器的绘图表示;
图2A是电容器和引线框架的顶视图;
图2B是图2A所示的电容器和引线框架的侧视图;
图3A是通过导电环氧树脂固定至引线框架的电容器的顶视图;
图3B是图3A所示的组件的侧视图;
图4A是根据本发明的示范性实施例的具有集成电容器的传感器的顶视图;
图4B是图4A的传感器的侧视图;
图4C是图4A的电容器的顶视图;
图4D是图4C的电容器的侧视图;
图4E是根据本发明的示范性实施例的具有集成电容器的传感器的顶视图;
图4F是图4E的传感器的侧视图;
图5是示出了图4A的传感器的示范性制造步骤序列的流程图;
图5A是示出了根据本发明的示范性实施例的传感器的备选制造步骤序列的流程图;
图5B是示出了根据本发明的示范性实施例的传感器的另一制造步骤序列的流程图;
图6A是根据本发明的示范性实施例的耦合到引线框架的电容器的顶视图;
图6B是图6A的组件的截面图;
图6C是示出了图6A的组件的示范性制造步骤序列的流程图;
图7A是耦合到引线框架的电容器的顶视图;
图7B是图7A的组件的截面图;
图8A是耦合到引线框架的电容器的顶视图;
图8B是图8的组件沿A-A线的截面图;
图8C是图8的组件沿B-B线的截面图;
图9A是耦合到引线框架的电容器的顶视图;
图9B是图9A的组件沿A-A线的截面图;
图9C是图9A的组件沿B-B线的截面图;
图9D是耦合到引线框架的电容器的顶视图;
图9E是图9D的组件沿A-A线的截面图;
图9F是图9D的组件沿B-B线的截面图;
图9G是图9D的组件的绘图表示;
图10A是耦合到引线框架的电容器的顶视图;
图10B是图10的组件沿A-A线的截面图;
图10C是图10的组件沿B-B线的截面图;
图10D是图10的组件沿C-C线的截面图;
图11A是具有集成电容器的传感器的前视图;
图11B是图11A的传感器的侧视图;
图12A是现有技术传感器的前视图;
图12B是图12A的现有技术传感器的侧视图;以及
图12C是图12A的现有技术传感器的绘图表示。
具体实施方式
图1示出了根据本发明的示范性实施例的具有集成电容器102a、b的集成电路(IC)封装100。在图示的实施例中,IC封装100包括具有磁传感器的管芯104,所述磁传感器用于检测磁场或者磁场中的变化,其中所述磁场可能随着所研究的对象的移动而变化。所述管芯104和电容器102可以位于具有一系列引线指状物(finger)108的引线框架106上。
与已知的传感器封装相比,通过集成一个或多个根据将在下文中予以更为充分的说明的示范性实施例的电容器102,封装的竖直方向或者磁场将受到最小的影响或者不受影响,例如,只发生微小增大或不增大。本领域技术人员将认识到,对于传感器IC而言,希望使传感器封装和所研究的对象之间的距离降至最低。
图2A和图2B示出了在引线框架206界定的区域204内设置在诸如KAPTON带的带202上的电容器200。更具体而言,形成引线框架,对其进行切割或操纵,从而形成用于电容器200的区域204。电容器200处于引线框架206的表面208之下,因而与引线框架上的电容器相比降低了封装的竖直尺寸。
采用任何适当的技术,例如,引线键合、焊料、导电环氧树脂等将电容器200电耦合到引线框架206。在某些实施例中,可以优选引线键合和/或导电环氧树脂,因为焊料可能会因在温度循环过程中由热膨胀系数(CTE)失配导致的热膨胀而在与电容器或引线框架的界面处发生断裂。
图3A和图3B示出了处于引线框架304的表面302之下的具有电容器300的传感器的另一实施例。在图示的实施例中,所述电容器的底部306处于引线框架304的底表面308之下。采用导电环氧树脂310将电容器300电连接并固定到引线框架304。借助这一布局,在竖直方向能够更多地利用用于所述传感器的封装的主体作为封装厚度。这一方向是磁传感器的操作当中的重要因素,这是本领域技术人员很容易认识到的。
在示范性实施例中,将电容器300置于引线框架302之下,并通过导电环氧树脂310将电容器300电连接至引线框架并固定在适当位置。在一个实施例中,使电容器300大致在引线框架302的纵向中心312上居中放置。也就是说,所述电容器处于引线框架的顶表面314之上和处于底表面316之下的部分等同。但是,在其他实施例中,也可以相对于引线框架302对电容器300做出不同的布置。
在示范性实施例中,用于使电容器300相对于引线框架302定位的装配架350(图3B)包括托盘352,其提供了用于在组装过程中将电容器300固定到适当位置的凹陷。例如硅等的管芯还可能出现在引线框架的其他部分,但是为了清晰起见,这里没有示出。对托盘352定位,从而将电容器相对于引线框架302放置到预期的位置,与此同时涂覆导电环氧树脂310并使其固化。在使环氧树脂或其他连接机构固化或固定之后,可以去除所述托盘,并且可以(例如)在所述组件周围对模制化合物进行包覆模制,以形成IC封装。
在另一实施例中,采用焊料将电容器电连接并固定至引线框架。应当理解,可以采用其他能够抵御在塑料封装注入模制过程中出现的机械力的适当材料。
图4A和图4B示出了根据本发明的示范性实施例的具有第一和第二集成电容器402a、b并且具有示范性尺寸的IC封装400的另一实施例。将管芯404连接至具有切口区域408的引线框架406,在所述切口区域408内,可以将电容器402置于引线框架406的表面410之下。可以采用塑料或其他材料作为用于对所述组件进行封装的模制材料412。
如图4C和图4D所示,在示范性实施例中,将电容器402安装到诸如具有导电箔的聚酰亚胺带等的带414(KAPTON是聚酰亚胺带的一种商标名)上。可以将采用连续卷轴的带自动键合工艺(TAB)用于电容器402。借助这一布局,所述组件将在所述模制过程中保持完好无损。与具有安装于引线框架上的电容器的封装相比,通过将电容器402置于引线框架表面410之下,降低了封装的所需厚度。
在图4A和图4B的示范性封装中,具有集成电容器402a、b的IC封装400是Hall效应传感器。本领域公知,传感器400可以用来通过监测磁场中的变化而检测所研究的对象的移动。
所述示范性传感器封装400的尺寸为大约0.24英寸长,大约0.184英寸宽,大约0.76英寸深,即大约0.76英寸厚。引线框架406的厚度大约为0.01英寸,其切口区域大约为0.04英寸,从而能够将电容器402置于引线框架表面之下。
所述电容器提供的容抗可以存在变化。一般而言,所述电容可以处于大约500pF到大约200nF的范围内。
图4E-F示出了根据本发明的示范性实施例的另一传感器封装实施例450,其包括具有引线框架452的集成电容器402a、402b,所述引线框架452具有用于降低涡流的第一狭缝454。在其他实施例中,还可以在所述引线框架内提供额外的狭缝456、458。传感器450与图4A的传感器400具有一些共性,其中,类似的附图标记表示类似的元件。
本领域公知,在存在AC磁场(例如,围绕载流导体的磁场)的情况下,可能在导电引线框架452内诱发AC涡流。涡流将形成倾向于导致较小的磁场的闭合环路,因而Hall效应元件所经受的磁场要小于否则其将经受的磁场,从而引起灵敏度的降低。此外,如果与涡流相关的磁场是非均匀的或者并非是围绕Hall效应元件对称的,那么所述Hall效应元件还有可能生成不希望出现的偏移电压。
狭缝454倾向于降低涡流在引线框架452中所流经的闭合环路的尺寸(例如,直径或通路长度)。应当理解,涡流所流经的闭合环路的尺寸的降低将导致更小的涡流,从而对诱发涡流的AC磁场带来更小的局部影响。因此,在狭缝454的作用下,具有Hall效应元件460的电流传感器的灵敏度受到涡流的影响更低。
狭缝454将导致朝向Hall元件的每一侧的(多个)涡流,而不是导致围绕Hall效应元件460旋转的(单个)涡流。尽管由所述(多个)涡流导致的磁场是加性的,但是在所述(多个)涡流的提高的接近度的作用下,与没有狭缝的单涡流相比,总的幅度场强度仍然是较低的。
应当理解,可以按照各式各样的配置形成任何数量的狭缝,以满足具体应用的需要。在图4E的示范性实施例中,相对于在管芯上处于居中位置的Hall效应元件460在引线框架452内形成第一、第二和第三狭缝454、456和458。所述狭缝削弱了涡流,并且增强了传感器的总体性能。
应当理解,应当从广义的角度理解狭缝一词,使其从总体上涵盖引线框架的导电性的中断。例如,狭缝可以包括几个相对较大的孔以及具有相对较高的密度的较小的孔。此外,狭缝一词并非意在指代任何具体的几何形状。例如,狭缝包括各种各样规则和不规则的形状,例如,锥形、椭圆形等。此外,应当理解,狭缝的方向可能发生变化。而且,显然可能希望基于传感器的类型确定狭缝的位置。
具有狭缝的引线框架452可以由金属层形成,所述金属层可以由适当的导电材料构成,包括(例如)铝、铜、金、钛、钨、铬和/或镍。
图5示出了包括用于提供具有一个或多个集成电容器的传感器的示范性步骤序列的过程500。在步骤502中,向预期位置涂覆导电环氧树脂,在步骤504中,使管芯附着至引线框架。在步骤506中,通过导电环氧树脂使电容器附着至引线框架。在步骤508中使所述组件固化,随后在步骤510中将引线指状物引线键合到管芯。之后,(例如)在步骤512中采用塑料材料对所述组件进行包覆模制,随后是去飞边毛刺/镀覆以及修整/切单的精整步骤514、516。
或者,可以采用将焊料球和/或焊料凸块施加到所述管芯上的倒装法附着,之后使所述管芯附着至引线框架。使电容器附着至引线框架,随后回流焊之后对所述组件进行包覆模制。
图5A示出了图5的过程500的备选实施例550,在所述实施例中,采用焊料来替代导电环氧树脂,其中,采用类似的附图标记表示类似的元件。在步骤552中,将焊料印刷或者配送到预期的位置,从而实现步骤554中电容器的附着。在步骤556中,按照与图5所示的类似的方式使管芯附着至引线框架,随后进行固化等处理。图5B示出了可以在引线键合过程中减少断裂的另一备选实施例560。在步骤562中,分配环氧树脂,在步骤564中,附着管芯。之后,在步骤566中使环氧树脂固化,随后在步骤568中进行引线键合。之后,在步骤572中,附着电容器,在步骤574中使所述组件固化,随后分别在步骤512、514和516中进行模制、去飞边毛刺/镀覆和修整/切单。
应当理解,所述的示范性过程实施例都是示范性的。此外,未必示出了所有的步骤,例如,通常在对封装模制之后,对引线进行镀覆、修整,由此形成了引线。还有可能采用一种类型的焊料附着电容器,之后采用第二种类型的焊料使管芯通过倒装法附着至引线框架。此外,可以根据哪种焊料具有较高的回流温度而使过程步骤颠倒。应当首先采用具有较高温度的焊料。对管芯进行倒装法附着,之后采用环氧树脂附着电容器的情况也是可能的。
应当理解,可以采用各种附着机制来固定电容器和引线框架和/或对其进行电连接。示范性的机制包括带和导电环氧树脂、焊料、带和引线键合、TAB(带自动键合)以及非导电环氧树脂和引线键合。
图6A和图6B示出了一种半导体封装结构600,其包括向其附着管芯604和部件606a、b、c的引线框架602。一般而言,可以将诸如电容器和无源器件的部件耦合到所述引线框架和指状物。这一布局延长了诸如无源部件等部件的寿命周期,提高了降噪能力,并且在印刷电路板上产生了更多的空间。
在图示的实施例中,按照相对于引线框架602的间隔关系设置一系列未附着的引线指状物608a、b、c的位置,从而分别通过部件606a、b、c实现指状物—引线框架连接。将管芯604置于引线框架602的顶表面602a上,并使一个或多个附件606附着至引线框架的底表面602b。还可以使部件606耦合到引线指状物,从而将引线指状物608电连接至引线框架602。例如,可以采用引线键合610实现管芯604和引线框架之间的电连接。
凭借这一布局,能够采用一种或多种诸如丝网印刷、分配(dispensing)、表面安装器件附着等的成熟的表面安装技术(SMT)处理实现引线框架焊盘上的无源部件集成。
可以通过蚀刻、冲压、研磨等制造引线框架602和/或引线指状物608。可以在切单和封装体模制之前执行无源部件606的附着,从而使切单过程不会对内部部件的质量造成不利影响。本领域已知,并且如(例如)授予Drussel等人的美国专利No.6886247中所公开的,切单是指使印刷电路板和衬底材料板内的互连PCB分离这一操作。
图6C示出了用于制造图6A和图6B的组件的示范性步骤序列650。在步骤652中,使管芯附着至引线框架,随后在步骤654中使之固化。在固化之后,在步骤656中附着引线键合,之后在步骤658中对所述组件进行模制,进而在步骤660中对所述组件进行去飞边毛刺/镀覆。在步骤662中,印刷或分配焊料,随后在步骤664中执行电容器的附着、回流焊和清洗。在步骤666中,执行修整和切单。在图示的实施例中,暴露引线框架的铜,从而在完成模制之后使电容器附着至所述封装。
图7A和图7B示出了具有采用集成方案提供的嵌入电容器702的组件700。将管芯704设置在引线框架706的顶表面706a上,所述引线框架706具有相对于所述引线框架设置的引线指状物708a、b、c。电容器702或其他部件具有置于引线框架上的第一键合焊盘710上的第一末端702a以及置于第一引线指状物708a上的第二键合焊盘712上的第二末端702b。所述引线框架具有下陷(downset)区域714,其表面位于引线框架的顶表面706a之下,以容纳电容器702。类似地,第一引线指状物708a具有处于引线指状物的顶表面718之下的下陷区域716,以容纳电容器第二末端702b。
就这一布局而言,由于引线框架和第一引线指状物的下陷区域714和716的原因,使电容器的顶表面720相对于引线框架的顶表面706a降低。
所述电容器的示范性阻抗范围为大约500pF到大约100nF。应当理解,可以采用各种电容器类型和附着技术提供具有集成电容器的传感器。在一个具体实施例中,采用具有1.6mm长、0.85mm宽、0.86mm厚的示范性尺寸的表面安装电容器。
图8A-C示出了另一实施例700’,其与图2A和图2B的组件具有一些共性。在对应的引线框架706’和第一引线指状物708a中将下陷区域714’和716’形成为方形沟槽。
可以将具有集成电容器的集成电路用于需要在其输入或输出处提供噪声过滤(例如借助旁路电容器)的应用。例如,在机动车应用中,诸如Hall效应器件的位置传感器往往采用旁路电容器。
图9A-C示出了组件的另一实施例800,其具有第一和第二集成部件802、804。将管芯805设置在引线框架806上,所述引线框架806具有从引线框架延伸出来的第一和第二引线指状物808a、b。此外,引线指状物810a-e与引线框架806分离,它们相对于所述引线框架具有一定的间隔关系。第一完好的引线指状物808a具有处于该引线指状物的外侧区域上的第一和第二下陷区域812a、b,以容纳所述第一和第二部件802、804的末端。第一和第二分离的引线指状物810a、b分别具有下陷区域814、816,以容纳第一和第二部件802、804的另一末端。部件802、804提供如图所示的预期电连接。引线键合818能够在引线指状物和管芯805之间提供电连接。
在图示的实施例中,对引线指状物808a、810a、b进行精压(coin),以提供下陷区域812、814、816。通过在精压的下陷区域内设置诸如电容器、电感器、电阻器等的部件,能够降低整个封装的厚度。
由于可以降低封装厚度,因而这样的布局为磁场传感器提供了优势。也就是说,本发明的具有集成部件的传感器能够具有和没有集成部件的相当的常规传感器一样的厚度。本领域技术人员容易理解,磁隙是所感兴趣的磁传感器的参数,降低封装厚度的能力可以提供改进的磁传感器的设计。
图9D-G示出了另一组件的实施例800’,该组件具有集成到诸如磁传感器的封装内的第一和第二部件802、804。实施例800’与图9A-C的实施例800具有一些共性,其中,采用类似的附图标记表示类似的元件。将部件802、804固定至没有下陷区域的引线框架806’。部件802、804位于管芯805的与用于将各个管芯位置连接至引线指状物的引线键合818相对的一侧。部件802、804位于管芯的与从所述封装伸出的引线820相对的一侧。在图示的实施例中,将接近部件802、804的拉筋(tie bar)从最终的封装上切除或修整掉。通过将部件802、804置于管芯的与外部引线820相对的一侧,提供了更为紧凑的封装。
图10A-D示出了与图9D-F的组件具有某些类似性的另一实施例900。将所述部件置于引线框架806’的与管芯805’相对的一侧。这一布局优化了与磁传感器结合使用的器件,其中,将磁体设置在所述器件的背面,并使引线成九十度角(参考图6),以优化传感器的尺寸。
图11A-B示出了具有集成电容器的示范性传感器封装950,其具有与图12A-C所示的没有集成电容器的常规传感器相比降低了的主体直径。引线952在封装主体954内与引线框架呈九十度角。在一个实施例中,外部引线952处于管芯的与集成电容器相对的一侧上,如图9D所示。凭借本发明的集成电容器,所述传感器提供了一种涉及降低的尺寸的鲁棒的噪声过滤解决方案。例如,图11A、B的传感器封装950可以具有大约7.6mm的直径,而图12A-C所示的相当的现有技术传感器具有大约9.8mm的直径。
为了制造图11A-B所示的封装950,使引线形成/弯曲九十度角。将所述部分插入到预先模制的外壳内,从而使封装主体与引线对准。对于Hall传感器而言,例如,可以添加磁体和集中器(未示出)。之后,对所述组件进行包覆模制。
本发明的示范性实施例可以用于诸如机动车应用的各种应用中的封装内系统(SiP)技术。本发明的封装有助于优化无源部件的寿命周期,提高降噪能力,以及在电路板上创建更多的空间。此外,本发明优化了对部件的定位,从而降低了空间要求,增强了器件感测能力。
在另一实施例中,传感器包括引线框架上的具有传感器元件的第一管芯以及具有电路和至少一个集成电容器的第二管芯。尽管文中给出的示范性实施例讨论了Hall效应传感器的使用,但是对于本领域技术人员而言,显然还可以采用其他类型的磁场传感器替代Hall元件或与之结合使用。例如,所述器件可以采用各向异性磁阻(AMR)传感器和/或巨磁阻(GMR)传感器。就GMR传感器而言,所述GMR元件旨在覆盖由多个材料叠层构成的传感器的范围,例如,所述传感器可以是:线性旋转阀、隧穿磁阻(TMR)或宏(colossal)磁阻(CMR)传感器。在其他实施例中,所述传感器包括后向偏置(back bias)磁体。所述管芯可以由硅、GaAs、InGaAs、InGaAsP、SiGe或其他适当的材料独立形成。
本发明的其他实施例包括一般而言希望其内具有诸如电容器的集成部件的压力传感器以及其他无接触传感器封装。
基于上述实施例,本领域技术人员将认识到本发明的其他特征和优点。相应地,本发明不限于具体图示和描述的内容,除非在权利要求中明确指出。这里将文中引用的所有公开文献和参考文献明确地全文引入以供参考。
Claims (17)
1、一种传感器,包括:
管芯;
具有相对的第一表面和第二表面的引线框架,所述引线框架以所述第一表面支撑所述管芯;
用于提供与所述引线框架和所述管芯的电连接的引线指状物;以及
耦合到所述引线框架和所述引线指状物中的第一个的部件,使得所述部件是IC封装的集成部分。
2、根据权利要求1所述的传感器,其中,所述引线框架具有切口区域,所述部件设置在该切口区域中。
3、根据权利要求1所述的传感器,其中,所述部件的底表面处于所述引线框架的所述第二表面之下。
4、根据权利要求3所述的传感器,其中,所述部件大体上围绕所述引线框架的纵轴放置,使得处于所述第一表面之上和处于所述第二表面之下的所述部件的部分基本上等同。
5、根据权利要求1所述的传感器,其中,所述传感器包括磁传感器。
6、根据权利要求5所述的传感器,其中,所述部件包括电容器。
7、根据权利要求5所述的传感器,其中,所述引线框架包括至少一个用于削弱涡流的狭缝。
8、根据权利要求5所述的传感器,其中,所述磁传感器包括Hall元件。
9、根据权利要求5所述的传感器,其中,所述磁传感器包括Hall元件、AMR元件和/或GMR元件中的一种或多种。
10、根据权利要求1所述的传感器,其中,所述传感器包括外部引线,使得所述外部引线处于所述管芯的与耦合到所述引线框架的部件相对的一侧上。
11、根据权利要求10所述的传感器,其中,所述部件包括电容器。
12、根据权利要求10所述的传感器,还包括处于所述管芯的与所述外部引线相对的一侧上的第二部件。
13、根据权利要求10所述的传感器,其中,所述引线框架包括至少一个用于削弱涡流的狭缝。
14、根据权利要求13所述的传感器,其中,所述传感器包括Hall元件。
15、根据权利要求1所述的传感器,其中,所述引线框架包括至少一个用于削弱涡流的狭缝。
16、根据权利要求15所述的传感器,其中,所述传感器包括与所述至少一个狭缝对准的Hall元件。
17、根据权利要求16所述的传感器,其中,所述至少一个狭缝包括第一狭缝、第二狭缝和第三狭缝,其中,所述第一狭缝与所述Hall元件对准,所述第二狭缝和第三狭缝相对于所述Hall元件对称。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510933381.3A CN105321921B (zh) | 2006-07-14 | 2007-06-04 | 为用于集成电路的部件实现无源附着的方法和设备 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/457,626 | 2006-07-14 | ||
US11/457,626 US20080013298A1 (en) | 2006-07-14 | 2006-07-14 | Methods and apparatus for passive attachment of components for integrated circuits |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510933381.3A Division CN105321921B (zh) | 2006-07-14 | 2007-06-04 | 为用于集成电路的部件实现无源附着的方法和设备 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101467058A true CN101467058A (zh) | 2009-06-24 |
Family
ID=38923732
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510933381.3A Active CN105321921B (zh) | 2006-07-14 | 2007-06-04 | 为用于集成电路的部件实现无源附着的方法和设备 |
CNA2007800219816A Pending CN101467058A (zh) | 2006-07-14 | 2007-06-04 | 为用于集成电路的部件实现无源附着的方法和设备 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510933381.3A Active CN105321921B (zh) | 2006-07-14 | 2007-06-04 | 为用于集成电路的部件实现无源附着的方法和设备 |
Country Status (6)
Country | Link |
---|---|
US (4) | US20080013298A1 (zh) |
EP (1) | EP2041592B1 (zh) |
JP (4) | JP5378209B2 (zh) |
KR (1) | KR101367089B1 (zh) |
CN (2) | CN105321921B (zh) |
WO (1) | WO2008008140A2 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103811454A (zh) * | 2012-11-14 | 2014-05-21 | 电力集成公司 | 使用引线框架的磁耦合电流隔离式通信 |
CN103928431A (zh) * | 2012-10-31 | 2014-07-16 | 矽力杰半导体技术(杭州)有限公司 | 一种倒装封装装置 |
CN107024229A (zh) * | 2015-10-15 | 2017-08-08 | 恩智浦有限公司 | 旋转传感器 |
CN107209034A (zh) * | 2015-01-28 | 2017-09-26 | 大陆-特韦斯股份有限公司 | 具有用于传感器的嵌入式过滤器部件的适配器 |
CN107797079A (zh) * | 2012-03-20 | 2018-03-13 | 阿莱戈微系统有限责任公司 | 带有一体的铁磁性材料的磁场传感器集成电路 |
CN108370104A (zh) * | 2015-12-03 | 2018-08-03 | 大陆-特韦斯股份有限公司 | 导电轨,方法及用途 |
CN108987352A (zh) * | 2017-05-30 | 2018-12-11 | 英飞凌科技股份有限公司 | 具有连接在载体层级处的部件的封装 |
Families Citing this family (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004020172A1 (de) * | 2004-04-24 | 2005-11-24 | Robert Bosch Gmbh | Monolithischer Regler für die Generatoreinheit eines Kraftfahrzeugs |
US20080013298A1 (en) | 2006-07-14 | 2008-01-17 | Nirmal Sharma | Methods and apparatus for passive attachment of components for integrated circuits |
US20080179722A1 (en) * | 2007-01-31 | 2008-07-31 | Cyntec Co., Ltd. | Electronic package structure |
US7816772B2 (en) * | 2007-03-29 | 2010-10-19 | Allegro Microsystems, Inc. | Methods and apparatus for multi-stage molding of integrated circuit package |
US9823090B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a target object |
US8093670B2 (en) * | 2008-07-24 | 2012-01-10 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions |
US20100052424A1 (en) * | 2008-08-26 | 2010-03-04 | Taylor William P | Methods and apparatus for integrated circuit having integrated energy storage device |
US8486755B2 (en) * | 2008-12-05 | 2013-07-16 | Allegro Microsystems, Llc | Magnetic field sensors and methods for fabricating the magnetic field sensors |
US9222992B2 (en) | 2008-12-18 | 2015-12-29 | Infineon Technologies Ag | Magnetic field current sensors |
US20100188078A1 (en) * | 2009-01-28 | 2010-07-29 | Andrea Foletto | Magnetic sensor with concentrator for increased sensing range |
DE102009000460A1 (de) * | 2009-01-28 | 2010-07-29 | Robert Bosch Gmbh | Stromgeführter Hall-Sensor |
US20110133732A1 (en) * | 2009-12-03 | 2011-06-09 | Allegro Microsystems, Inc. | Methods and apparatus for enhanced frequency response of magnetic sensors |
JP5499696B2 (ja) * | 2009-12-25 | 2014-05-21 | 富士通セミコンダクター株式会社 | 半導体装置及び実装構造 |
US8717016B2 (en) | 2010-02-24 | 2014-05-06 | Infineon Technologies Ag | Current sensors and methods |
JP5067676B2 (ja) * | 2010-03-12 | 2012-11-07 | 株式会社デンソー | センサユニット及び、集磁モジュール |
EP2366976A1 (en) * | 2010-03-18 | 2011-09-21 | Nxp B.V. | Sensor package having shaped lead frame |
US8760149B2 (en) | 2010-04-08 | 2014-06-24 | Infineon Technologies Ag | Magnetic field current sensors |
US8680843B2 (en) | 2010-06-10 | 2014-03-25 | Infineon Technologies Ag | Magnetic field current sensors |
US8283742B2 (en) | 2010-08-31 | 2012-10-09 | Infineon Technologies, A.G. | Thin-wafer current sensors |
US20120146165A1 (en) | 2010-12-09 | 2012-06-14 | Udo Ausserlechner | Magnetic field current sensors |
US8975889B2 (en) | 2011-01-24 | 2015-03-10 | Infineon Technologies Ag | Current difference sensors, systems and methods |
JP5623622B2 (ja) * | 2011-03-09 | 2014-11-12 | パナソニック株式会社 | 半導体装置 |
US8963536B2 (en) | 2011-04-14 | 2015-02-24 | Infineon Technologies Ag | Current sensors, systems and methods for sensing current in a conductor |
JP5743871B2 (ja) | 2011-12-07 | 2015-07-01 | 日立オートモティブシステムズ株式会社 | 熱式流量計 |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US9666788B2 (en) * | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9494660B2 (en) * | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
JP6009800B2 (ja) * | 2012-04-12 | 2016-10-19 | 株式会社リブドゥコーポレーション | 吸収性物品 |
US10215550B2 (en) | 2012-05-01 | 2019-02-26 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensors having highly uniform magnetic fields |
US9817078B2 (en) | 2012-05-10 | 2017-11-14 | Allegro Microsystems Llc | Methods and apparatus for magnetic sensor having integrated coil |
CN104508816B (zh) * | 2012-07-30 | 2017-08-01 | 大陆-特韦斯贸易合伙股份公司及两合公司 | 用于为电子装置布线的布线设备 |
US8818296B2 (en) | 2012-11-14 | 2014-08-26 | Power Integrations, Inc. | Noise cancellation for a magnetically coupled communication link utilizing a lead frame |
US9482700B2 (en) * | 2013-01-20 | 2016-11-01 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Current detector to sense current without being in series with conductor |
US10725100B2 (en) | 2013-03-15 | 2020-07-28 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an externally accessible coil |
US9411025B2 (en) * | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US10495699B2 (en) | 2013-07-19 | 2019-12-03 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target |
US10145908B2 (en) | 2013-07-19 | 2018-12-04 | Allegro Microsystems, Llc | Method and apparatus for magnetic sensor producing a changing magnetic field |
US9810519B2 (en) | 2013-07-19 | 2017-11-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as tooth detectors |
EP3080627B1 (en) * | 2013-12-26 | 2020-10-14 | Allegro MicroSystems, LLC | Methods and apparatus for sensor diagnostics |
CN104749390B (zh) * | 2013-12-31 | 2020-07-03 | 森萨塔科技(常州)有限公司 | 定位框架结构 |
EP2894489B1 (en) | 2014-01-13 | 2019-03-13 | TDK-Micronas GmbH | Sensor device |
JP6343455B2 (ja) * | 2014-02-06 | 2018-06-13 | 日立オートモティブシステムズ株式会社 | 半導体パッケージ構造 |
DE102014213231A1 (de) * | 2014-07-08 | 2016-01-14 | Continental Automotive Gmbh | Sensorunterseitig verschaltete passive Bauelemente |
US9823092B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor providing a movement detector |
US10712403B2 (en) | 2014-10-31 | 2020-07-14 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US9720054B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
DE102014118769B4 (de) * | 2014-12-16 | 2017-11-23 | Infineon Technologies Ag | Drucksensor-Modul mit einem Sensor-Chip und passiven Bauelementen innerhalb eines gemeinsamen Gehäuses |
EP3250893B1 (de) | 2015-01-28 | 2018-11-21 | Continental Teves AG & Co. OHG | Sensor mit symmetrisch eingebetteten sensorelementen |
US9857398B2 (en) | 2015-01-30 | 2018-01-02 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Inter-circuit board connector with current sensor |
JP6368682B2 (ja) | 2015-04-24 | 2018-08-01 | 株式会社東芝 | 光結合装置 |
US20170018483A1 (en) * | 2015-07-17 | 2017-01-19 | Texas Instruments Incorporated | Integrated circuit chip fabrication leadframe |
US10411498B2 (en) * | 2015-10-21 | 2019-09-10 | Allegro Microsystems, Llc | Apparatus and methods for extending sensor integrated circuit operation through a power disturbance |
US10527703B2 (en) | 2015-12-16 | 2020-01-07 | Allegro Microsystems, Llc | Circuits and techniques for performing self-test diagnostics in a magnetic field sensor |
JP6659350B2 (ja) * | 2015-12-18 | 2020-03-04 | 旭化成エレクトロニクス株式会社 | センサ装置および電流センサ |
JP6672573B2 (ja) * | 2016-04-19 | 2020-03-25 | 新日本無線株式会社 | 半導体装置 |
JP6134840B2 (ja) * | 2016-05-16 | 2017-05-24 | 日立オートモティブシステムズ株式会社 | 熱式流量計 |
US10012518B2 (en) | 2016-06-08 | 2018-07-03 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a proximity of an object |
US10260905B2 (en) | 2016-06-08 | 2019-04-16 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors to cancel offset variations |
US10041810B2 (en) | 2016-06-08 | 2018-08-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as movement detectors |
US9922912B1 (en) | 2016-09-07 | 2018-03-20 | Infineon Technologies Americas Corp. | Package for die-bridge capacitor |
US9958292B1 (en) * | 2016-10-25 | 2018-05-01 | Nxp B.V. | Sensor package with double-sided capacitor attach on same leads and method of fabrication |
US11430722B2 (en) * | 2017-04-12 | 2022-08-30 | Texas Instruments Incorporated | Integration of a passive component in a cavity of an integrated circuit package |
US10734313B2 (en) | 2017-04-12 | 2020-08-04 | Texas Instruments Incorporated | Integration of a passive component in an integrated circuit package |
US20180301402A1 (en) * | 2017-04-12 | 2018-10-18 | Texas Instruments Incorporated | Integration of a passive component in a cavity of an integrated circuit package |
JP6215502B2 (ja) * | 2017-04-17 | 2017-10-18 | 日立オートモティブシステムズ株式会社 | 熱式流量計 |
US11428755B2 (en) | 2017-05-26 | 2022-08-30 | Allegro Microsystems, Llc | Coil actuated sensor with sensitivity detection |
US10310028B2 (en) | 2017-05-26 | 2019-06-04 | Allegro Microsystems, Llc | Coil actuated pressure sensor |
US10837943B2 (en) | 2017-05-26 | 2020-11-17 | Allegro Microsystems, Llc | Magnetic field sensor with error calculation |
US10324141B2 (en) | 2017-05-26 | 2019-06-18 | Allegro Microsystems, Llc | Packages for coil actuated position sensors |
US10641842B2 (en) | 2017-05-26 | 2020-05-05 | Allegro Microsystems, Llc | Targets for coil actuated position sensors |
US10996289B2 (en) | 2017-05-26 | 2021-05-04 | Allegro Microsystems, Llc | Coil actuated position sensor with reflected magnetic field |
US10615105B2 (en) * | 2017-10-20 | 2020-04-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
US10866117B2 (en) | 2018-03-01 | 2020-12-15 | Allegro Microsystems, Llc | Magnetic field influence during rotation movement of magnetic target |
US10978897B2 (en) | 2018-04-02 | 2021-04-13 | Allegro Microsystems, Llc | Systems and methods for suppressing undesirable voltage supply artifacts |
US20190326205A1 (en) * | 2018-04-20 | 2019-10-24 | Pixart Imaging Inc. | Chip package |
CN112470492B (zh) * | 2018-07-23 | 2022-04-08 | 美商楼氏电子有限公司 | 麦克风装置及其制造方法 |
US10921391B2 (en) | 2018-08-06 | 2021-02-16 | Allegro Microsystems, Llc | Magnetic field sensor with spacer |
US11255700B2 (en) | 2018-08-06 | 2022-02-22 | Allegro Microsystems, Llc | Magnetic field sensor |
DE102018119677B4 (de) | 2018-08-14 | 2024-04-25 | Infineon Technologies Ag | Sensorpackage und Verfahren zur Herstellung eines Sensorpackage |
US10823586B2 (en) | 2018-12-26 | 2020-11-03 | Allegro Microsystems, Llc | Magnetic field sensor having unequally spaced magnetic field sensing elements |
JP7290420B2 (ja) * | 2019-01-22 | 2023-06-13 | 株式会社日立製作所 | パワー半導体装置 |
US11061084B2 (en) | 2019-03-07 | 2021-07-13 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deflectable substrate |
US10955306B2 (en) | 2019-04-22 | 2021-03-23 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deformable substrate |
DE102019110570B4 (de) | 2019-04-24 | 2023-05-25 | Infineon Technologies Ag | Magnetfeldsensorpackage mit integrierter passiver komponente |
US11029373B2 (en) | 2019-07-16 | 2021-06-08 | Allegro Microsystems, Llc | Magnetic field sensors having a magnetic anti-aliasing filter |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
CN110808236B (zh) * | 2019-11-13 | 2021-04-13 | 宁波中车时代传感技术有限公司 | 一种pcb芯片及其二次封装工艺 |
US11280637B2 (en) | 2019-11-14 | 2022-03-22 | Allegro Microsystems, Llc | High performance magnetic angle sensor |
US11237020B2 (en) | 2019-11-14 | 2022-02-01 | Allegro Microsystems, Llc | Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet |
US11150273B2 (en) | 2020-01-17 | 2021-10-19 | Allegro Microsystems, Llc | Current sensor integrated circuits |
US11183436B2 (en) | 2020-01-17 | 2021-11-23 | Allegro Microsystems, Llc | Power module package and packaging techniques |
JP7382853B2 (ja) | 2020-02-27 | 2023-11-17 | エイブリック株式会社 | 磁気センサ及び磁気検出方法 |
CN111146331A (zh) * | 2020-04-02 | 2020-05-12 | 宁波中车时代传感技术有限公司 | 一种线性霍尔芯片的封装结构及封装方法 |
US11262422B2 (en) | 2020-05-08 | 2022-03-01 | Allegro Microsystems, Llc | Stray-field-immune coil-activated position sensor |
US11493361B2 (en) | 2021-02-26 | 2022-11-08 | Allegro Microsystems, Llc | Stray field immune coil-activated sensor |
US11578997B1 (en) | 2021-08-24 | 2023-02-14 | Allegro Microsystems, Llc | Angle sensor using eddy currents |
US11744020B2 (en) * | 2021-11-30 | 2023-08-29 | Texas Instruments Incorporated | Mechanically bridged SMD interconnects for electronic devices |
Family Cites Families (129)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4409608A (en) | 1981-04-28 | 1983-10-11 | The United States Of America As Represented By The Secretary Of The Navy | Recessed interdigitated integrated capacitor |
JPS6130067A (ja) * | 1984-07-23 | 1986-02-12 | Nec Kansai Ltd | ハイブリツドic |
JPH01184885A (ja) | 1988-01-13 | 1989-07-24 | Murata Mfg Co Ltd | 半導体装置 |
JP2897996B2 (ja) * | 1988-10-05 | 1999-05-31 | 旭化成電子株式会社 | 磁界検出装置 |
JP2522214B2 (ja) | 1989-10-05 | 1996-08-07 | 日本電装株式会社 | 半導体装置およびその製造方法 |
JPH03284147A (ja) * | 1990-03-28 | 1991-12-13 | Mitsubishi Electric Corp | 車両用交流発電機 |
US5583375A (en) * | 1990-06-11 | 1996-12-10 | Hitachi, Ltd. | Semiconductor device with lead structure within the planar area of the device |
DE4031560C2 (de) | 1990-10-05 | 1993-10-14 | Dieter Prof Dr Ing Seitzer | Stromsensor mit magnetfeldempfindlichen Bauelementen und Verwendung |
US5366816A (en) * | 1991-06-20 | 1994-11-22 | Titan Kogyo Kabushiki Kaisha | Potassium hexatitanate whiskers having a tunnel structure |
JPH0655971A (ja) | 1992-08-05 | 1994-03-01 | Anden Kk | 電子式方向指示器 |
JPH06216308A (ja) * | 1993-01-14 | 1994-08-05 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
ZA941138B (en) | 1993-02-26 | 1994-08-29 | Westinghouse Electric Corp | Circuit breaker responsive to repeated in-rush currents produced by a sputtering arc fault. |
JPH0736048A (ja) | 1993-07-15 | 1995-02-07 | Japan Synthetic Rubber Co Ltd | 液晶配向剤 |
JP2536724B2 (ja) * | 1993-07-16 | 1996-09-18 | 日本電気株式会社 | リ―ドフレ―ム型磁気抵抗効果センサの実装構造 |
JPH0766356A (ja) * | 1993-08-30 | 1995-03-10 | Nec Corp | チップ部品の実装構造 |
US5619012A (en) * | 1993-12-10 | 1997-04-08 | Philips Electronics North America Corporation | Hinged circuit assembly with multi-conductor framework |
US5414355A (en) * | 1994-03-03 | 1995-05-09 | Honeywell Inc. | Magnet carrier disposed within an outer housing |
US5434105A (en) | 1994-03-04 | 1995-07-18 | National Semiconductor Corporation | Process for attaching a lead frame to a heat sink using a glob-top encapsulation |
US5666004A (en) | 1994-09-28 | 1997-09-09 | Intel Corporation | Use of tantalum oxide capacitor on ceramic co-fired technology |
JPH08116016A (ja) | 1994-10-15 | 1996-05-07 | Toshiba Corp | リードフレーム及び半導体装置 |
JPH08162607A (ja) * | 1994-12-07 | 1996-06-21 | Matsushita Electric Ind Co Ltd | 半導体素子 |
US5579194A (en) | 1994-12-13 | 1996-11-26 | Eaton Corporation | Motor starter with dual-slope integrator |
WO1996030943A1 (en) * | 1995-03-31 | 1996-10-03 | Maxim Integrated Products, Inc. | Thin profile integrated circuit package |
US5581179A (en) | 1995-05-31 | 1996-12-03 | Allegro Microsystems, Inc. | Hall-effect ferrous-article-proximity sensor assembly |
US5691869A (en) | 1995-06-06 | 1997-11-25 | Eaton Corporation | Low cost apparatus for detecting arcing faults and circuit breaker incorporating same |
JP3603406B2 (ja) * | 1995-09-11 | 2004-12-22 | 株式会社デンソー | 磁気検出センサおよびその製造方法 |
US6066890A (en) * | 1995-11-13 | 2000-05-23 | Siliconix Incorporated | Separate circuit devices in an intra-package configuration and assembly techniques |
US5729130A (en) | 1996-01-17 | 1998-03-17 | Moody; Kristann L. | Tracking and holding in a DAC the peaks in the field-proportional voltage in a slope activated magnetic field sensor |
US5726577A (en) | 1996-04-17 | 1998-03-10 | Eaton Corporation | Apparatus for detecting and responding to series arcs in AC electrical systems |
US5804880A (en) * | 1996-11-04 | 1998-09-08 | National Semiconductor Corporation | Solder isolating lead frame |
US5912556A (en) * | 1996-11-06 | 1999-06-15 | Honeywell Inc. | Magnetic sensor with a chip attached to a lead assembly within a cavity at the sensor's sensing face |
US5963028A (en) | 1997-08-19 | 1999-10-05 | Allegro Microsystems, Inc. | Package for a magnetic field sensing device |
EP0944839B1 (en) * | 1997-09-15 | 2006-03-29 | AMS International AG | A current monitor system and a method for manufacturing it |
US6359331B1 (en) * | 1997-12-23 | 2002-03-19 | Ford Global Technologies, Inc. | High power switching module |
MY118338A (en) | 1998-01-26 | 2004-10-30 | Motorola Semiconductor Sdn Bhd | A leadframe, a method of manufacturing a leadframe and a method of packaging an electronic component utilising the leadframe. |
US6396712B1 (en) | 1998-02-12 | 2002-05-28 | Rose Research, L.L.C. | Method and apparatus for coupling circuit components |
US6324048B1 (en) | 1998-03-04 | 2001-11-27 | Avx Corporation | Ultra-small capacitor array |
US6316736B1 (en) * | 1998-06-08 | 2001-11-13 | Visteon Global Technologies, Inc. | Anti-bridging solder ball collection zones |
US6113612A (en) * | 1998-11-06 | 2000-09-05 | St. Jude Medical Cardiovascular Group, Inc. | Medical anastomosis apparatus |
JP2000164803A (ja) | 1998-11-27 | 2000-06-16 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP3378816B2 (ja) | 1998-12-21 | 2003-02-17 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
KR20000050863A (ko) * | 1999-01-15 | 2000-08-05 | 전주범 | 전력용 모듈의 제작 공정 |
US6429652B1 (en) | 1999-06-21 | 2002-08-06 | Georgia Tech Research Corporation | System and method of providing a resonant micro-compass |
JP2001052780A (ja) | 1999-08-12 | 2001-02-23 | Shin Etsu Polymer Co Ltd | 電気コネクタおよびその製造方法 |
JP3062192B1 (ja) | 1999-09-01 | 2000-07-10 | 松下電子工業株式会社 | リ―ドフレ―ムとそれを用いた樹脂封止型半導体装置の製造方法 |
US6420779B1 (en) | 1999-09-14 | 2002-07-16 | St Assembly Test Services Ltd. | Leadframe based chip scale package and method of producing the same |
DE19946935B4 (de) | 1999-09-30 | 2004-02-05 | Daimlerchrysler Ag | Vorrichtung zur induktiven Strommessung mit mindestens einem Differenzsensor |
JP2001289610A (ja) * | 1999-11-01 | 2001-10-19 | Denso Corp | 回転角度検出装置 |
JP3813775B2 (ja) * | 1999-11-05 | 2006-08-23 | ローム株式会社 | マルチチップモジュール |
JP2001141738A (ja) | 1999-11-18 | 2001-05-25 | Sumitomo Electric Ind Ltd | 回転センサ及びその製造方法 |
JP3852554B2 (ja) | 1999-12-09 | 2006-11-29 | サンケン電気株式会社 | ホール素子を備えた電流検出装置 |
JP2001165702A (ja) | 1999-12-10 | 2001-06-22 | Sumitomo Electric Ind Ltd | 磁気変量検出センサ |
JP3429246B2 (ja) | 2000-03-21 | 2003-07-22 | 株式会社三井ハイテック | リードフレームパターン及びこれを用いた半導体装置の製造方法 |
US6492697B1 (en) | 2000-04-04 | 2002-12-10 | Honeywell International Inc. | Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset |
US6501270B1 (en) * | 2000-05-15 | 2002-12-31 | Siemens Vdo Automotive Corporation | Hall effect sensor assembly with cavities for integrated capacitors |
US6853178B2 (en) * | 2000-06-19 | 2005-02-08 | Texas Instruments Incorporated | Integrated circuit leadframes patterned for measuring the accurate amplitude of changing currents |
AU2001279161A1 (en) * | 2000-08-04 | 2002-02-18 | Hei, Inc. | Structures and assembly methods for radio-frequency-identification modules |
US6617846B2 (en) | 2000-08-31 | 2003-09-09 | Texas Instruments Incorporated | Method and system for isolated coupling |
CN1387678A (zh) | 2000-09-08 | 2002-12-25 | Asm技术新加坡私人有限公司 | 一种模具 |
US6486535B2 (en) * | 2001-03-20 | 2002-11-26 | Advanced Semiconductor Engineering, Inc. | Electronic package with surface-mountable device built therein |
US6504366B2 (en) * | 2001-03-29 | 2003-01-07 | Honeywell International Inc. | Magnetometer package |
US6608375B2 (en) | 2001-04-06 | 2003-08-19 | Oki Electric Industry Co., Ltd. | Semiconductor apparatus with decoupling capacitor |
TW488054B (en) * | 2001-06-22 | 2002-05-21 | Advanced Semiconductor Eng | Semiconductor package for integrating surface mount devices |
DE10141877B4 (de) * | 2001-08-28 | 2007-02-08 | Infineon Technologies Ag | Halbleiterbauteil und Konvertereinrichtung |
DE10148042B4 (de) * | 2001-09-28 | 2006-11-09 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Kunststoffgehäuse und Komponenten eines höhenstrukturierten metallischen Systemträgers und Verfahren zu deren Herstellung |
JP3445591B2 (ja) * | 2001-11-30 | 2003-09-08 | 沖電気工業株式会社 | 樹脂封止型半導体装置 |
JP2003177171A (ja) | 2001-12-11 | 2003-06-27 | Sumitomo Electric Ind Ltd | 磁気変量センサ及びその製造方法 |
US6677669B2 (en) * | 2002-01-18 | 2004-01-13 | International Rectifier Corporation | Semiconductor package including two semiconductor die disposed within a common clip |
US6737298B2 (en) | 2002-01-23 | 2004-05-18 | St Assembly Test Services Ltd | Heat spreader anchoring & grounding method & thermally enhanced PBGA package using the same |
US6815944B2 (en) | 2002-01-31 | 2004-11-09 | Allegro Microsystems, Inc. | Method and apparatus for providing information from a speed and direction sensor |
US6747300B2 (en) * | 2002-03-04 | 2004-06-08 | Ternational Rectifier Corporation | H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing |
EP1491854A4 (en) | 2002-04-02 | 2006-11-02 | Asahi Kasei Emd Corp | INCLINATION SENSOR, METHOD FOR MANUFACTURING THE INCLINATION SENSOR, AND METHOD FOR MEASURING THE INCLINATION |
US6828658B2 (en) * | 2002-05-09 | 2004-12-07 | M/A-Com, Inc. | Package for integrated circuit with internal matching |
US6809416B1 (en) | 2002-05-28 | 2004-10-26 | Intersil Corporation | Package for integrated circuit with thermal vias and method thereof |
JP4052111B2 (ja) * | 2002-06-07 | 2008-02-27 | ソニー株式会社 | 無線情報記憶媒体 |
DE10231194A1 (de) | 2002-07-10 | 2004-02-05 | Infineon Technologies Ag | Anschlussleitrahmen für eine in einem Halbleiterchip ausgeführte Sonde und Magnetfeldsensor |
KR100563584B1 (ko) * | 2002-07-29 | 2006-03-22 | 야마하 가부시키가이샤 | 자기 센서의 제조 방법과 그 리드 프레임, 자기 센서, 및센서 장치 |
US20040094826A1 (en) * | 2002-09-20 | 2004-05-20 | Yang Chin An | Leadframe pakaging apparatus and packaging method thereof |
US6781359B2 (en) * | 2002-09-20 | 2004-08-24 | Allegro Microsystems, Inc. | Integrated current sensor |
US6775140B2 (en) | 2002-10-21 | 2004-08-10 | St Assembly Test Services Ltd. | Heat spreaders, heat spreader packages, and fabrication methods for use with flip chip semiconductor devices |
DE10250538B4 (de) * | 2002-10-29 | 2008-02-21 | Infineon Technologies Ag | Elektronisches Bauteil als Multichipmodul und Verfahren zu dessen Herstellung |
JP2004153020A (ja) | 2002-10-30 | 2004-05-27 | Asahi Kasei Electronics Co Ltd | トランス |
US6798057B2 (en) | 2002-11-05 | 2004-09-28 | Micron Technology, Inc. | Thin stacked ball-grid array package |
CN1695066A (zh) * | 2002-11-29 | 2005-11-09 | 雅马哈株式会社 | 磁传感器及补偿磁传感器的温度相关特性的方法 |
US6825067B2 (en) | 2002-12-10 | 2004-11-30 | St Assembly Test Services Pte Ltd | Mold cap anchoring method for molded flex BGA packages |
KR100477020B1 (ko) * | 2002-12-16 | 2005-03-21 | 삼성전자주식회사 | 멀티 칩 패키지 |
JP2004207477A (ja) | 2002-12-25 | 2004-07-22 | Sanken Electric Co Ltd | ホール素子を有する半導体装置 |
JP4055609B2 (ja) * | 2003-03-03 | 2008-03-05 | 株式会社デンソー | 磁気センサ製造方法 |
JP4221578B2 (ja) | 2003-03-31 | 2009-02-12 | 株式会社デンソー | 磁気検出装置 |
US7239000B2 (en) | 2003-04-15 | 2007-07-03 | Honeywell International Inc. | Semiconductor device and magneto-resistive sensor integration |
US7265543B2 (en) | 2003-04-15 | 2007-09-04 | Honeywell International Inc. | Integrated set/reset driver and magneto-resistive sensor |
US6921975B2 (en) * | 2003-04-18 | 2005-07-26 | Freescale Semiconductor, Inc. | Circuit device with at least partial packaging, exposed active surface and a voltage reference plane |
US6927479B2 (en) * | 2003-06-25 | 2005-08-09 | St Assembly Test Services Ltd | Method of manufacturing a semiconductor package for a die larger than a die pad |
DE10335153B4 (de) | 2003-07-31 | 2006-07-27 | Siemens Ag | Schaltungsanordnung auf einem Substrat, die einen Bestandteil eines Sensors aufweist, und Verfahren zum Herstellen der Schaltungsanordnung auf dem Substrat |
TWI236112B (en) | 2003-08-14 | 2005-07-11 | Via Tech Inc | Chip package structure |
US7476816B2 (en) * | 2003-08-26 | 2009-01-13 | Allegro Microsystems, Inc. | Current sensor |
US20060219436A1 (en) | 2003-08-26 | 2006-10-05 | Taylor William P | Current sensor |
US7166807B2 (en) | 2003-08-26 | 2007-01-23 | Allegro Microsystems, Inc. | Current sensor |
US7075287B1 (en) | 2003-08-26 | 2006-07-11 | Allegro Microsystems, Inc. | Current sensor |
US6995315B2 (en) | 2003-08-26 | 2006-02-07 | Allegro Microsystems, Inc. | Current sensor |
US7446383B2 (en) * | 2003-09-16 | 2008-11-04 | Koninklijke Philips Electronics N.V. | Electronic device mountable onto a substrate using surface mount techniques, and method |
US20050270748A1 (en) * | 2003-12-16 | 2005-12-08 | Phoenix Precision Technology Corporation | Substrate structure integrated with passive components |
JP4270095B2 (ja) * | 2004-01-14 | 2009-05-27 | 株式会社デンソー | 電子装置 |
US7005325B2 (en) * | 2004-02-05 | 2006-02-28 | St Assembly Test Services Ltd. | Semiconductor package with passive device integration |
DE102004017191B4 (de) * | 2004-04-07 | 2007-07-12 | Infineon Technologies Ag | Vorrichtung und Verfahren zur Ermittlung einer Richtung eines Objekts |
JP4148182B2 (ja) | 2004-05-17 | 2008-09-10 | ソニー株式会社 | 表示装置 |
US7531852B2 (en) | 2004-06-14 | 2009-05-12 | Denso Corporation | Electronic unit with a substrate where an electronic circuit is fabricated |
JP4590961B2 (ja) * | 2004-07-20 | 2010-12-01 | 株式会社デンソー | 電子装置 |
JP4617762B2 (ja) | 2004-08-04 | 2011-01-26 | 株式会社デンソー | 回転検出装置の製造方法 |
US7777607B2 (en) | 2004-10-12 | 2010-08-17 | Allegro Microsystems, Inc. | Resistor having a predetermined temperature coefficient |
FR2876800B1 (fr) * | 2004-10-18 | 2007-03-02 | Commissariat Energie Atomique | Procede et dispositif de mesure de champ magnetique a l'aide d'un capteur magnetoresitif |
DE102004054317B4 (de) | 2004-11-10 | 2014-05-15 | Mitsubishi Denki K.K. | Strommessvorrichtung |
US7476953B2 (en) | 2005-02-04 | 2009-01-13 | Allegro Microsystems, Inc. | Integrated sensor having a magnetic flux concentrator |
US7259624B2 (en) | 2005-02-28 | 2007-08-21 | Texas Instruments Incorporated | Low noise AC coupled amplifier with low band-pass corner and low power |
JP4566799B2 (ja) * | 2005-03-31 | 2010-10-20 | 大日本印刷株式会社 | 樹脂封止型電子部品内蔵半導体装置および電子部品内蔵リードフレーム |
US7358724B2 (en) | 2005-05-16 | 2008-04-15 | Allegro Microsystems, Inc. | Integrated magnetic flux concentrator |
DE102005027767A1 (de) * | 2005-06-15 | 2006-12-28 | Infineon Technologies Ag | Integriertes magnetisches Sensorbauteil |
US7269992B2 (en) * | 2005-06-15 | 2007-09-18 | Honeywell International Inc. | Magnet orientation and calibration for small package turbocharger speed sensor |
US7808074B2 (en) * | 2005-07-08 | 2010-10-05 | Infineon Technologies Ag | Advanced leadframe having predefined bases for attaching passive components |
US7378721B2 (en) * | 2005-12-05 | 2008-05-27 | Honeywell International Inc. | Chip on lead frame for small package speed sensor |
US8018056B2 (en) | 2005-12-21 | 2011-09-13 | International Rectifier Corporation | Package for high power density devices |
US7768083B2 (en) | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
US7687882B2 (en) * | 2006-04-14 | 2010-03-30 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor |
US7573112B2 (en) * | 2006-04-14 | 2009-08-11 | Allegro Microsystems, Inc. | Methods and apparatus for sensor having capacitor on chip |
US20080013298A1 (en) | 2006-07-14 | 2008-01-17 | Nirmal Sharma | Methods and apparatus for passive attachment of components for integrated circuits |
US7816772B2 (en) * | 2007-03-29 | 2010-10-19 | Allegro Microsystems, Inc. | Methods and apparatus for multi-stage molding of integrated circuit package |
US20110133732A1 (en) | 2009-12-03 | 2011-06-09 | Allegro Microsystems, Inc. | Methods and apparatus for enhanced frequency response of magnetic sensors |
JP5569097B2 (ja) * | 2010-03-29 | 2014-08-13 | 富士通セミコンダクター株式会社 | 半導体装置及びリードフレーム |
WO2011142006A1 (ja) * | 2010-05-12 | 2011-11-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
2006
- 2006-07-14 US US11/457,626 patent/US20080013298A1/en not_active Abandoned
-
2007
- 2007-06-04 KR KR1020097002133A patent/KR101367089B1/ko active IP Right Grant
- 2007-06-04 CN CN201510933381.3A patent/CN105321921B/zh active Active
- 2007-06-04 WO PCT/US2007/013358 patent/WO2008008140A2/en active Application Filing
- 2007-06-04 EP EP07795814.8A patent/EP2041592B1/en active Active
- 2007-06-04 CN CNA2007800219816A patent/CN101467058A/zh active Pending
- 2007-06-04 JP JP2009519438A patent/JP5378209B2/ja active Active
-
2011
- 2011-12-14 US US13/325,162 patent/US9228860B2/en active Active
-
2013
- 2013-09-25 JP JP2013197704A patent/JP5969969B2/ja active Active
-
2015
- 2015-06-17 US US14/741,644 patent/US20150285874A1/en not_active Abandoned
-
2016
- 2016-07-01 JP JP2016131260A patent/JP2016225634A/ja active Pending
-
2018
- 2018-01-09 JP JP2018001076A patent/JP6462907B2/ja active Active
-
2020
- 2020-07-30 US US16/943,357 patent/US20200355525A1/en not_active Abandoned
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107797079A (zh) * | 2012-03-20 | 2018-03-13 | 阿莱戈微系统有限责任公司 | 带有一体的铁磁性材料的磁场传感器集成电路 |
CN103928431A (zh) * | 2012-10-31 | 2014-07-16 | 矽力杰半导体技术(杭州)有限公司 | 一种倒装封装装置 |
CN103811454A (zh) * | 2012-11-14 | 2014-05-21 | 电力集成公司 | 使用引线框架的磁耦合电流隔离式通信 |
CN108461473A (zh) * | 2012-11-14 | 2018-08-28 | 电力集成公司 | 集成电路封装件及其使用方法 |
CN107209034A (zh) * | 2015-01-28 | 2017-09-26 | 大陆-特韦斯股份有限公司 | 具有用于传感器的嵌入式过滤器部件的适配器 |
CN107209034B (zh) * | 2015-01-28 | 2020-03-24 | 大陆-特韦斯股份有限公司 | 具有用于传感器的嵌入式过滤器部件的适配器 |
CN107024229A (zh) * | 2015-10-15 | 2017-08-08 | 恩智浦有限公司 | 旋转传感器 |
CN108370104A (zh) * | 2015-12-03 | 2018-08-03 | 大陆-特韦斯股份有限公司 | 导电轨,方法及用途 |
US10438871B2 (en) | 2015-12-03 | 2019-10-08 | Continental Teves Ag & Co. Ohg | Electric conductor track, method, and use |
CN108987352A (zh) * | 2017-05-30 | 2018-12-11 | 英飞凌科技股份有限公司 | 具有连接在载体层级处的部件的封装 |
CN108987352B (zh) * | 2017-05-30 | 2023-10-20 | 英飞凌科技股份有限公司 | 具有连接在载体层级处的部件的封装 |
Also Published As
Publication number | Publication date |
---|---|
JP5969969B2 (ja) | 2016-08-17 |
EP2041592B1 (en) | 2021-11-10 |
US9228860B2 (en) | 2016-01-05 |
KR101367089B1 (ko) | 2014-02-24 |
CN105321921A (zh) | 2016-02-10 |
JP2018082203A (ja) | 2018-05-24 |
JP2014060404A (ja) | 2014-04-03 |
JP6462907B2 (ja) | 2019-01-30 |
KR20090031757A (ko) | 2009-03-27 |
JP2016225634A (ja) | 2016-12-28 |
US20080013298A1 (en) | 2008-01-17 |
US20150285874A1 (en) | 2015-10-08 |
US20200355525A1 (en) | 2020-11-12 |
WO2008008140A3 (en) | 2008-05-08 |
JP5378209B2 (ja) | 2013-12-25 |
CN105321921B (zh) | 2020-11-27 |
JP2009544149A (ja) | 2009-12-10 |
WO2008008140A2 (en) | 2008-01-17 |
US20120086090A1 (en) | 2012-04-12 |
EP2041592A2 (en) | 2009-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101467058A (zh) | 为用于集成电路的部件实现无源附着的方法和设备 | |
US11828819B2 (en) | Magnetic field sensor integrated circuit with integral ferromagnetic material | |
US20240222526A1 (en) | Magnetic field sensor integrated circuit with integral ferromagnetic material | |
JP6336576B2 (ja) | 分割されたリードフレーム及び磁石を有する集積回路パッケージ | |
US8106654B2 (en) | Magnetic sensor integrated circuit device and method | |
CN104204833B (zh) | 具有拼合式引线框的集成电路封装 | |
CN102969446B (zh) | 半导体芯片封装和方法 | |
US20140377915A1 (en) | Pre-mold for a magnet semiconductor assembly group and method of producing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Massachusetts USA Applicant after: ALLEGRO MICROSYSTEMS INC Address before: Massachusetts USA Applicant before: Allegro Microsystems Inc. |
|
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20090624 |