CN1387678A - 一种模具 - Google Patents

一种模具 Download PDF

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CN1387678A
CN1387678A CN00815318A CN00815318A CN1387678A CN 1387678 A CN1387678 A CN 1387678A CN 00815318 A CN00815318 A CN 00815318A CN 00815318 A CN00815318 A CN 00815318A CN 1387678 A CN1387678 A CN 1387678A
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mould
recess
lead frame
material layer
thickness
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C·J·瓦特
L·A·林
S·C·何
M·H·许
J·S·许
T·H·柯
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ASMPT Singapore Pte Ltd
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ASM Technology Singapore Pte Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C2045/1486—Details, accessories and auxiliary operations
    • B29C2045/14934—Preventing penetration of injected material between insert and adjacent mould wall
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Pens And Brushes (AREA)
  • Materials For Medical Uses (AREA)

Abstract

一种模具(1)用来模塑单侧灌封的电子器件。该模具(1)包括具有一个模腔(4)的第一模具段(2)和第二模具段(3),该第二模具段包括一个第一凹进部分(6),该第一凹进部分(6)适合于容纳连接在引线框架(10)上的材料层(15),但不能容纳此引线框架。

Description

本发明涉及一种模具，特别涉及电子器件灌封用的模具。
通常是通过将芯片连接到引线框架的芯片连接垫上，将芯片上的焊接(bond)垫之间的金导线焊接到引线框架上相应的引线上，然后将该芯片、芯片垫和导线灌封在树脂材料中，使得只有引线框架上的外引线从灌封的包中露出，从而组装电子器件，比如硅片(或芯片)。
近年来，电子器件取得了进展，其中引线框架只在芯片连接和导线焊结的一侧被灌封，使引线框架另一侧不粘有树脂。这样的单侧灌封的电子器件已知有许多不同的名称，包括模塑引线包(MLP)、微引线框架包(MLF)和方形扁平非引线包(QFN)。
然而，这种单侧灌封器件所具有的问题之一是，要保证在模塑加工过程中，树脂仅仅覆盖引线框架的一侧，而不能流到引线框架的另一侧。如果树脂流到引线框架的另一侧，就会导致在该特定器件上的缺陷，造成该器件报废。
尽量减少此类问题的一种解决办法就是在与芯片侧相对的引线框架一侧贴上粘接带，并连接芯片和进行导线焊接，然后进行模塑加工。使用粘接带的理论基础是在引线框架的另一侧有粘接带存在将避免在模塑过程中树脂渗透到引线框架将成为外引线的那部分，借此降低报废器件的数目。
可是在实际中发现，尽管有该粘接带存在，树脂还是会流到引线框架的另一侧。特别是在使用点阵(matrix)引线框架的情况下，此时外面一行芯片特别容易发生树脂的渗漏。因此，一般不把芯片连接到芯片连接部分的最外面一行，因为在最外一行树脂渗漏的可能性比较大。
因此，树脂向引线框架另一侧的渗漏降低了由给定的引线框架得到可用芯片的合格率。
按照本发明的第一方面，一种用于模塑单侧灌封电子器件的模具包括形成一个模腔的第一模具段和包括第一凹进部分的第二模具段，该凹进部分适合于容纳连接于引线框架的材料层，但不容纳引线框架。
按照本发明的第二方面，一种灌封单侧电子器件的方法包括，通过在引线框架的一侧连接一层材料形成引线框架组件；将芯片连接在引线框架另一侧的芯片连接部分上；焊接芯片的接触部分和引线框架接触部分之间的导线；将引线框架组件插入模具中，使该芯片在该模具第一段中的模腔里，并且该引线框架位于该模具的第二段上，使得该材料层，而不是引线框架，位于模具第二段的第一凹进部分中。
一般说来，该材料层的至少一个尺寸小于引线框架的相应尺寸。优选该材料层的宽度小于引线框架的宽度。
第一凹进部分的深度优选大于该材料层的厚度。一般地，第一凹进的深度比该材料层的厚度大约大10～30％，优选大15～30％，更优选大20～30％，最优选大约比该材料的厚度大25％。
引线框架一般位于该模具的第二段的第二凹进部分中，而第一凹进部分位于第二凹进部分中。
该材料层优选是通过粘接连接在引线框架上的一种粘接薄膜。该粘接薄膜一般可以是一种粘接带形式的。该接带优选是具有硅粘接剂的聚酰胺带，比如Nitto Denko TRM-6250粘接带。
下面参照附图来描述本发明的模具，其中：
图1是在模塑以后，但在开模之前引线框架位于模具中的模具截面图；以及
图2是具有连接粘接带的点阵引线框架和一个模塑的点阵块的平面图。
图1示出了模具1，该模具包括第一模具段2和第二模具段3。该模具的第一段2包括一个模腔4，而模具段3包括第一凹进6和第二凹进5。第一凹进6位于第二凹进5当中。
图2是一个点阵引线框架10的平面图，它包括4个分离的芯片连接垫12的点阵11。每个芯片连接部分具有连接在其上的芯片(未显示)。
在使用时，将粘接带15贴在引线框架10的下侧。这是与将要连接芯片的一侧相对的一侧。这也示于图1。一般说来，粘接带15是一种压敏粘接带，优选是具有硅粘接剂的聚酰胺带，比如Nitto DenkoTRM-6250。在将此带贴在下侧以后，芯片就连接在每个芯片连接垫12上。
在所有的芯片都连接在每个点阵11上的每个芯片连接垫12上之后，引线框架10被送到一个常规的导线焊接机(未示出)上。该导线焊接机焊接连接于连接垫12的每个单个的芯片上的焊接垫与引线框架10上的相应的引线之间的导线。
如图2所示，粘接带15的宽度小于引线框架10的宽度。一般说来，粘接带15的厚度也小于引线框架的厚度。比如，粘接带的厚度可以在大约30～35μm。
在第二模具段3上的第一凹进6的深度优选大于粘接带15的厚度。一般说来，第一凹进的深度比粘接带的厚度大大约10～30％，优选大20～30％，更优选大大约25％。比如，如果粘接带的厚度是大约30～35μm，则深度比粘接带的厚度大大约5～8μm，该深度最优选比粘接带15的厚度大大约5μm。一般说来，如果使用的粘接带是Nitto DenkoTRM-6250，该带的公称厚度是大约33μm，而第一凹进6的深度是大约38μm。
如在图1中所示，引线框架10插入模具1中，该引线框架10定位于模具1的第二段3中，使得引线框架10位于第二凹进5中。粘接带15位于第一凹进6当中。
本发明人意外地发现，通过提供一个大到足够容纳粘接带15，但又小到不能容纳引线框架的第一凹进6，与没有第一凹进6的传统模具相比，降低了通过引线框架下侧10发生的树脂渗漏。优选通过使第一凹进6的深度大于粘接带15的厚度，就进一步增强了本发明的性能。

Claims (18)

1.一种用于模塑单侧灌封电子器件的模具，该模具包括一个具有一个模腔的第一模具段和一个第二模具段，该第二模具段包括一个第一凹进部分，该第一凹进部分适合于容纳附着在引线框架上的材料层，但不能容纳该引线框架。
2.如权利要求1的模具，该模具进一步包括一个适合于容纳该引线框架的第二凹进，而第一凹进部分位于该第二凹进部分当中。
3.如权利要求1或2的模具，其中该第一凹进部分的深度大于材料层的厚度。
4.如权利要求3的模具，其中第一凹进部分的深度比材料层的厚度大约大10～30％。
5.如权利要求4的模具，其中第一凹进部分的深度比材料层的厚度大约大15～30％。
6.如权利要求5的模具，其中第一凹进部分的深度比材料层的厚度大约大20～30％。
7.如权利要求6的模具，其中第一凹进部分的深度比材料层的厚度大约大25％。
8.一种单侧电子器件的灌封方法，该方法包括在引线框架的一侧附加一层材料形成引线框架组件；将芯片连接在引线框架另一侧的芯片连接部分上；在芯片的接触部分和引线框架接触部分之间焊接导线；将引线框架组件插入模具中，使该芯片在该模具第一段中的模腔里，并使该引线框架位于该模具的第二段上，使得该材料层而不是引线框架位于模具第二段的第一凹进部分中；并将一种模塑材料引入模腔中，以形成单侧灌封的电子器件。
9.如权利要求8的方法，其中第一凹进部分的深度大于材料层的厚度。
10.如权利要求9的方法，其中第一凹进部分的深度比材料层的厚度大约大10～30％。
11.如权利要求10的方法，其中第一凹进部分的深度比材料层的厚度大约大15～30％。
12.如权利要求11的方法，其中第一凹进部分的深度比材料层的厚度大约大20～30％。
13.如权利要求12的方法，其中第一凹进部分的深度比材料层的厚度大约大25％。
14.如权利要求8～13中任何一项的方法，其中材料层的厚度为大约15～60μm。
15.如权利要求14的方法，其中材料层的厚度为大约30～40μm。
16.如权利要求8～15中任何一项的方法，其中该引线框架位于该模具第二段的第二凹进部分中，而第一凹进部分位于此第二凹进部分中。
17.如权利要求8～16中任何一项的方法，其中材料层是通过粘接连接在该引线框架上的粘接薄膜。
18.如权利要求17的方法，其中该粘接薄膜呈粘接带的形式。
CN00815318A 2000-09-08 2000-09-08 一种模具 Pending CN1387678A (zh)

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CN102744176A (zh) * 2012-07-07 2012-10-24 上海鼎虹电子有限公司 电子元件封装中的清洁剂涂覆支架

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JP2005327830A (ja) * 2004-05-13 2005-11-24 Mitsubishi Electric Corp 半導体マイクロデバイス
TW200703606A (en) * 2005-07-15 2007-01-16 Siliconware Precision Industries Co Ltd Semiconductor package and fabrication method thereof
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