CN101314841B - 制造装置及发光装置的制造方法 - Google Patents

制造装置及发光装置的制造方法 Download PDF

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Publication number
CN101314841B
CN101314841B CN2008100999941A CN200810099994A CN101314841B CN 101314841 B CN101314841 B CN 101314841B CN 2008100999941 A CN2008100999941 A CN 2008100999941A CN 200810099994 A CN200810099994 A CN 200810099994A CN 101314841 B CN101314841 B CN 101314841B
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China
Prior art keywords
light
substrate
irradiated
film
layer
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Expired - Fee Related
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CN2008100999941A
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Chinese (zh)
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CN101314841A (zh
Inventor
平形吉晴
池田寿雄
井边隆宏
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
CN2008100999941A 2007-06-01 2008-05-29 制造装置及发光装置的制造方法 Expired - Fee Related CN101314841B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-147413 2007-06-01
JP2007147413 2007-06-01
JP2007147413 2007-06-01

Publications (2)

Publication Number Publication Date
CN101314841A CN101314841A (zh) 2008-12-03
CN101314841B true CN101314841B (zh) 2013-06-12

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Country Status (4)

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US (2) US8232038B2 (enExample)
JP (3) JP2009009935A (enExample)
KR (1) KR101563237B1 (enExample)
CN (1) CN101314841B (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) * 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
US20090218219A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing Apparatus
JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP5079722B2 (ja) 2008-03-07 2012-11-21 株式会社半導体エネルギー研究所 発光装置の作製方法
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8182863B2 (en) * 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US7993945B2 (en) * 2008-04-11 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5244680B2 (ja) * 2008-04-14 2013-07-24 株式会社半導体エネルギー研究所 発光装置の作製方法
JP5195451B2 (ja) 2008-04-15 2013-05-08 株式会社デンソー 燃料噴射装置、それに用いられる蓄圧式燃料噴射装置システム
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP5159689B2 (ja) * 2008-04-25 2013-03-06 株式会社半導体エネルギー研究所 発光装置の作製方法
KR101629637B1 (ko) * 2008-05-29 2016-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막방법 및 발광장치의 제조방법
US7919340B2 (en) * 2008-06-04 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US8574709B2 (en) 2008-07-21 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Deposition donor substrate and method for manufacturing light-emitting device
JP5469950B2 (ja) * 2008-08-08 2014-04-16 株式会社半導体エネルギー研究所 発光装置の作製方法
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
KR101023133B1 (ko) * 2009-03-19 2011-03-18 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP5323784B2 (ja) * 2009-09-15 2013-10-23 フオン・アルデンネ・アンラーゲンテヒニク・ゲゼルシヤフト・ミト・ベシユレンクテル・ハフツング 微細構造を製造するための方法及び装置
JP2012124478A (ja) * 2010-11-19 2012-06-28 Semiconductor Energy Lab Co Ltd 照明装置
WO2012133203A1 (ja) * 2011-03-30 2012-10-04 シャープ株式会社 蒸着膜パターンの形成方法および有機エレクトロルミネッセンス表示装置の製造方法
KR101813548B1 (ko) * 2011-06-30 2018-01-02 삼성디스플레이 주식회사 레이저 열전사 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
KR101328979B1 (ko) 2011-06-30 2013-11-13 삼성디스플레이 주식회사 유기 발광 표시장치
KR101787450B1 (ko) * 2011-08-09 2017-10-19 삼성디스플레이 주식회사 표시 장치
JP2013073822A (ja) * 2011-09-28 2013-04-22 Ulvac Japan Ltd 転写成膜装置
EP2591875B1 (de) * 2011-11-09 2017-01-25 Leister Technologies AG Laser mit Strahltransformationslinse
KR101959975B1 (ko) * 2012-07-10 2019-07-16 삼성디스플레이 주식회사 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
EP2731126A1 (en) 2012-11-09 2014-05-14 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method for bonding bare chip dies
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
CN104752469B (zh) * 2013-12-31 2018-08-03 昆山国显光电有限公司 一种像素结构及采用该像素结构的有机发光显示器
FR3025936B1 (fr) * 2014-09-11 2016-12-02 Saint Gobain Procede de recuit par lampes flash
CN105679967B (zh) * 2014-11-18 2018-06-26 昆山国显光电有限公司 掩膜板、制备有机发光显示装置的方法
CN104795425A (zh) * 2015-03-30 2015-07-22 京东方科技集团股份有限公司 有机发光二极管触控显示屏及其制作方法
KR102388724B1 (ko) * 2015-08-21 2022-04-21 삼성디스플레이 주식회사 증착용 마스크 제조 방법
KR102404575B1 (ko) 2015-10-12 2022-06-03 삼성디스플레이 주식회사 증착 장치와 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
US20200111846A1 (en) * 2017-03-30 2020-04-09 Qualtec Co., Ltd. EL Display-Panel Manufacturing Method, EL Display-Panel Manufacturing Apparatus, EL Display panel, and EL Display Device
JP7020896B2 (ja) * 2017-12-14 2022-02-16 株式会社キーエンス レーザ加工装置
US10138539B1 (en) * 2018-04-03 2018-11-27 Shiping Cheng Method of managing coating uniformity with an optical thickness monitoring system
US11094530B2 (en) 2019-05-14 2021-08-17 Applied Materials, Inc. In-situ curing of color conversion layer
US11239213B2 (en) 2019-05-17 2022-02-01 Applied Materials, Inc. In-situ curing of color conversion layer in recess
US10948830B1 (en) * 2019-12-23 2021-03-16 Waymo Llc Systems and methods for lithography
CN116034117A (zh) 2020-07-24 2023-04-28 应用材料公司 具有用于uv-led固化的基于硫醇的交联剂的量子点配方
CN112002712B (zh) * 2020-08-24 2022-09-16 武汉天马微电子有限公司 一种显示面板、显示装置及制作方法
US11646397B2 (en) 2020-08-28 2023-05-09 Applied Materials, Inc. Chelating agents for quantum dot precursor materials in color conversion layers for micro-LEDs
US20220288878A1 (en) 2021-03-12 2022-09-15 Applied Materials, Inc. Print Process For Color Conversion Layer Using Mask
TW202427786A (zh) 2021-03-25 2024-07-01 美商應用材料股份有限公司 減少次像素干擾的微型led以及製造方法
CN113770546B (zh) * 2021-10-11 2024-06-18 心之光电子科技(广东)有限公司 一种通过激光蚀刻和碳化塑料表面制作立体线路的工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6719916B2 (en) * 2001-04-18 2004-04-13 National Research Council Of Canada Multilayer microstructures and laser based method for precision and reduced damage patterning of such structures
CN1540720A (zh) * 2003-04-21 2004-10-27 ��ʽ����뵼����Դ�о��� 射束照射装置、射束照射方法及半导体装置的制作方法
CN1550568A (zh) * 2003-04-25 2004-12-01 ��ʽ����뵼����Դ�о��� 制造装置和发光装置

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474494B1 (en) * 1990-09-07 1997-12-29 Dai Nippon Printing Co., Ltd. Thermal transfer image receiving sheet and production process therefor
JPH0911646A (ja) * 1995-06-30 1997-01-14 Fuji Photo Film Co Ltd 熱転写シート
EP1655633A3 (en) * 1996-08-27 2006-06-21 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
JP3801730B2 (ja) 1997-05-09 2006-07-26 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及びそれを用いた薄膜形成方法
US5937272A (en) 1997-06-06 1999-08-10 Eastman Kodak Company Patterned organic layers in a full-color organic electroluminescent display array on a thin film transistor array substrate
JPH1126733A (ja) * 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
TW495635B (en) * 1997-07-11 2002-07-21 Hitachi Ltd Liquid crystal display device
US6165543A (en) 1998-06-17 2000-12-26 Nec Corporation Method of making organic EL device and organic EL transfer base plate
EP0997261B9 (de) * 1999-01-28 2001-04-11 Leister Process Technologies Laserfügeverfahren und Vorrichtung zum Verbinden von verschiedenen Werkstücken aus Kunststoff oder Kunststoff mit anderen Materialien
JP3740557B2 (ja) 1999-03-09 2006-02-01 独立行政法人産業技術総合研究所 有機薄膜作製方法および有機薄膜作製装置
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TWI232595B (en) 1999-06-04 2005-05-11 Semiconductor Energy Lab Electroluminescence display device and electronic device
TW501379B (en) * 2000-07-25 2002-09-01 Eastman Kodak Co Method of making organic electroluminescent device using laser transfer
US6495405B2 (en) * 2001-01-29 2002-12-17 Sharp Laboratories Of America, Inc. Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films
CN1240554C (zh) * 2001-05-28 2006-02-08 富士胶片株式会社 激光热转移记录法
JP2002367777A (ja) * 2001-06-07 2002-12-20 Sharp Corp 有機エレクトロルミネッセンス素子の製造方法
EP1455394B1 (en) 2001-07-24 2018-04-11 Samsung Electronics Co., Ltd. Transfer method
SG114589A1 (en) 2001-12-12 2005-09-28 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
JP4294305B2 (ja) 2001-12-12 2009-07-08 株式会社半導体エネルギー研究所 成膜装置および成膜方法
US6582875B1 (en) * 2002-01-23 2003-06-24 Eastman Kodak Company Using a multichannel linear laser light beam in making OLED devices by thermal transfer
JP2003264076A (ja) 2002-03-08 2003-09-19 Sharp Corp 有機発光層形成用塗液、有機ｌｅｄ用ドナーフィルム、それを用いた有機ｌｅｄ表示パネルの製造方法および有機ｌｅｄ表示パネル
US6703179B2 (en) 2002-03-13 2004-03-09 Eastman Kodak Company Transfer of organic material from a donor to form a layer in an OLED device
JP2003347192A (ja) * 2002-05-24 2003-12-05 Toshiba Corp エネルギービーム露光方法および露光装置
GB0213695D0 (en) * 2002-06-14 2002-07-24 Filtronic Compound Semiconduct Fabrication method
JP2004022400A (ja) * 2002-06-18 2004-01-22 Sony Corp 有機膜形成装置および有機膜形成方法
US6890627B2 (en) 2002-08-02 2005-05-10 Eastman Kodak Company Laser thermal transfer from a donor element containing a hole-transporting layer
JP2004103406A (ja) 2002-09-10 2004-04-02 Sony Corp 薄膜パターン形成方法および装置並びに有機ｅｌ表示装置の製造方法
US7136084B2 (en) * 2002-09-17 2006-11-14 Miller Timothy J Random laser image projector system and method
US20040191564A1 (en) * 2002-12-17 2004-09-30 Samsung Sdi Co., Ltd. Donor film for low molecular weight full color organic electroluminescent device using laser induced thermal imaging method and method for fabricating low molecular weight full color organic electroluminescent device using the film
JP2004220852A (ja) 2003-01-10 2004-08-05 Sony Corp 成膜装置および有機ｅｌ素子の製造装置
JP4179041B2 (ja) * 2003-04-30 2008-11-12 株式会社島津製作所 有機ｅｌ用保護膜の成膜装置、製造方法および有機ｅｌ素子
JP2004335649A (ja) * 2003-05-06 2004-11-25 Seiko Epson Corp 露光装置及び露光方法、露光用マスク、半導体装置
EP1491653A3 (en) 2003-06-13 2005-06-15 Pioneer Corporation Evaporative deposition methods and apparatus
JP4433722B2 (ja) * 2003-08-12 2010-03-17 セイコーエプソン株式会社 パターンの形成方法及び配線パターンの形成方法
JP2005081299A (ja) 2003-09-10 2005-03-31 Seiko Epson Corp 成膜方法、配線パターンの形成方法、半導体装置の製造方法、電気光学装置、及び電子機器
JP4402440B2 (ja) * 2003-12-03 2010-01-20 大日本印刷株式会社 カラーフィルタおよびカラーフィルタの製造方法
US20050145326A1 (en) 2004-01-05 2005-07-07 Eastman Kodak Company Method of making an OLED device
JP2005249937A (ja) * 2004-03-02 2005-09-15 Dainippon Printing Co Ltd カラーフィルタの製造方法及び装置
JP4754848B2 (ja) * 2004-03-03 2011-08-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7485337B2 (en) 2004-05-27 2009-02-03 Eastman Kodak Company Depositing an organic layer for use in OLEDs
KR101066478B1 (ko) * 2004-06-04 2011-09-21 엘지디스플레이 주식회사 레이저 빔 패턴 마스크 및 이를 이용한 결정화 방법
US7744770B2 (en) * 2004-06-23 2010-06-29 Sony Corporation Device transfer method
JP4545504B2 (ja) * 2004-07-15 2010-09-15 株式会社半導体エネルギー研究所 膜形成方法、発光装置の作製方法
KR100623694B1 (ko) * 2004-08-30 2006-09-19 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법
KR100579186B1 (ko) 2004-10-15 2006-05-11 삼성에스디아이 주식회사 유기 전계 발광 소자
JP2006120726A (ja) * 2004-10-19 2006-05-11 Seiko Epson Corp 薄膜装置の製造方法、電気光学装置、及び電子機器
KR100700654B1 (ko) 2005-02-22 2007-03-27 삼성에스디아이 주식회사 레이저 조사 장치 및 레이저 열 전사법
JP4793071B2 (ja) * 2005-04-18 2011-10-12 ソニー株式会社 表示装置および表示装置の製造方法
JP2006302636A (ja) 2005-04-20 2006-11-02 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス素子の製造方法、表示装置および照明装置
JP2006344459A (ja) * 2005-06-08 2006-12-21 Sony Corp 転写方法および転写装置
TWI307612B (en) 2005-04-27 2009-03-11 Sony Corp Transfer method and transfer apparatus
JP2006309995A (ja) * 2005-04-27 2006-11-09 Sony Corp 転写用基板および表示装置の製造方法ならびに表示装置
JP2006309994A (ja) * 2005-04-27 2006-11-09 Sony Corp 転写用基板および転写方法ならびに表示装置の製造方法
KR100645534B1 (ko) * 2005-08-12 2006-11-14 삼성에스디아이 주식회사 레이저 열전사용 마스크 및 그를 이용한 유기 전계 발광소자의 제조방법
EP1770443B1 (en) * 2005-09-28 2016-01-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and exposure method
WO2008069259A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, film formation method, manufacturing apparatus, and method for manufacturing light-emitting device
JP5416987B2 (ja) 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6719916B2 (en) * 2001-04-18 2004-04-13 National Research Council Of Canada Multilayer microstructures and laser based method for precision and reduced damage patterning of such structures
CN1540720A (zh) * 2003-04-21 2004-10-27 ��ʽ����뵼����Դ�о��� 射束照射装置、射束照射方法及半导体装置的制作方法
CN1550568A (zh) * 2003-04-25 2004-12-01 ��ʽ����뵼����Դ�о��� 制造装置和发光装置

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JP2013127977A (ja) 2013-06-27
KR20080105998A (ko) 2008-12-04
US8232038B2 (en) 2012-07-31
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KR101563237B1 (ko) 2015-10-26
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