CN101198716A - 溅射靶用氧化铬粉末及溅射靶 - Google Patents
溅射靶用氧化铬粉末及溅射靶 Download PDFInfo
- Publication number
- CN101198716A CN101198716A CNA2006800215929A CN200680021592A CN101198716A CN 101198716 A CN101198716 A CN 101198716A CN A2006800215929 A CNA2006800215929 A CN A2006800215929A CN 200680021592 A CN200680021592 A CN 200680021592A CN 101198716 A CN101198716 A CN 101198716A
- Authority
- CN
- China
- Prior art keywords
- weight
- ppm
- target
- chromium oxide
- chromic oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 239000000843 powder Substances 0.000 title claims abstract description 95
- 229910000423 chromium oxide Inorganic materials 0.000 title claims abstract description 46
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000005477 sputtering target Methods 0.000 claims abstract description 44
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims description 65
- 239000005864 Sulphur Substances 0.000 claims description 41
- 239000000470 constituent Substances 0.000 claims description 24
- 239000013585 weight reducing agent Substances 0.000 claims description 10
- 229910052745 lead Inorganic materials 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 6
- 229910052717 sulfur Inorganic materials 0.000 abstract 3
- 239000011593 sulfur Substances 0.000 abstract 3
- 238000005336 cracking Methods 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 74
- 239000002994 raw material Substances 0.000 description 44
- 238000005245 sintering Methods 0.000 description 38
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 20
- 239000000203 mixture Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 14
- 229910052804 chromium Inorganic materials 0.000 description 9
- 210000002469 basement membrane Anatomy 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 201000008827 tuberculosis Diseases 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000803 paradoxical effect Effects 0.000 description 5
- 239000003637 basic solution Substances 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 210000004379 membrane Anatomy 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 238000007651 thermal printing Methods 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000006477 desulfuration reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- XGFJCRNRWOXGQM-UHFFFAOYSA-N hot-2 Chemical compound CCSC1=CC(OC)=C(CCNO)C=C1OC XGFJCRNRWOXGQM-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G37/00—Compounds of chromium
- C01G37/02—Oxides or hydrates thereof
- C01G37/033—Chromium trioxide; Chromic acid
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/12—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on chromium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/446—Sulfides, tellurides or selenides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B2235/721—Carbon content
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B2235/724—Halogenide content
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B2235/726—Sulfur content
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Cr2O3热处理条件 | Swtppm | Cwtppm | Nawtppm | Fewtppm | Pbwtppm | Alwtppm | Siwtppm | Clwtppm | Kwtppm | Niwtppm | Cuwtppm | Mnwtppm | 重量减少(%)※ | |
实施例1 | 1000℃、大气、5小时 | 60 | 200 | 50 | 50 | 0.1 | 0.4 | 10 | 0.5 | 1 | 4 | 2 | 0.7 | 0.3 |
实施例2 | 1200℃、大气、5小时 | 10 | 90 | 20 | 40 | 0.1 | 0.3 | 6 | 0.4 | 0.8 | 3 | 2 | 0.5 | <0.1 |
实施例3 | 900℃、大气、48小时 | 90 | 150 | 70 | 50 | 1 | 1 | 7 | 2 | 2 | 4 | 3 | 0.6 | 0.6 |
比较例1 | 热处理前 | 300 | 250 | 170 | 200 | 70 | 5 | 10 | 20 | 6 | 20 | 5 | 5 | 1.2 |
比较例2 | 800℃、大气、5小时 | 300 | 200 | - | - | - | - | - | - | - | - | - | - | 1 |
比较例3 | 800℃、大气、48小时 | 290 | 140 | 70 | 70 | 1 | 4 | 10 | 9 | 5 | 4 | 3 | 0.6 | 0.75 |
比较例4 | 900℃、大气、24小时 | 160 | 170 | 110 | 60 | 1 | 1.5 | 8 | 3 | 4 | 3 | 3 | 0.8 | 0.8 |
配合组成mol% | Swtppm | Cwtppm | Nawtppm | Fewtppm | Pbwtppm | Alwtppm | Siwtppm | Clwtppm | Kwtppm | Niwtppm | Cuwtppm | Mnwtppm | 密度g/cm3 | 相对密度% | 破裂 | |
实施例1 | Cr∶Cr2O3=92∶8mol% | 45 | 180 | 5 | 250 | 10 | 50 | 100 | 1 | 1 | 5 | 20 | - | 6.5 | 97.5 | 无 |
实施例2 | Cr∶Cr2O3=85∶15mol% | 40 | 80 | 10 | 230 | 8 | 45 | 90 | 1 | 1 | 4 | 18 | - | 5.9 | 92.6 | 无 |
实施例3 | Cr2O3 | 40 | 130 | 25 | 40 | 0.1 | 0.3 | 5 | 0.2 | 0.5 | 3 | 2 | 0.5 | 5.1 | 97.9 | 无 |
实施例4 | ZnS∶Cr2O3=30∶70mol% | - | 100 | 12 | 30 | 0.1 | 0.1 | 5 | 0.3 | 0.8 | 2 | 2 | 0.5 | 4.5 | 91.6 | 无 |
实施例5 | Ta2O5∶Cr2O3=40∶60mol% | 15 | 90 | 50 | 15 | 0.2 | 0.2 | 50 | 2 | 1 | 2 | 2 | - | 6.8 | 95.8 | 无 |
比较例1 | Cr∶Cr2O3=85∶15mol% | 160 | 300 | 50 | 430 | 40 | 45 | 100 | 1 | 2 | 10 | 18 | - | - | - | 有 |
比较例2 | Cr2O3 | 280 | 230 | 150 | 190 | 30 | 4 | 10 | 1 | 1 | 18 | 5 | 2 | - | - | 有 |
比较例3 | Cr2O3∶Ta2O5=60∶40mol% | 150 | 100 | 110 | 200 | 25 | 10 | 70 | 2 | 1 | 2 | 2 | - | - | - | 有 |
比较例4 | Cr2O3 | 200 | 150 | 150 | 100 | 11 | 3 | 10 | 2 | 3 | 2 | 3 | 2 | - | - | 有 |
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP175224/2005 | 2005-06-15 | ||
JP2005175224 | 2005-06-15 | ||
PCT/JP2006/304737 WO2006134694A1 (ja) | 2005-06-15 | 2006-03-10 | スパッタリングターゲット用酸化クロム粉末及びスパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101198716A true CN101198716A (zh) | 2008-06-11 |
CN101198716B CN101198716B (zh) | 2010-12-22 |
Family
ID=37532063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800215929A Active CN101198716B (zh) | 2005-06-15 | 2006-03-10 | 溅射靶用氧化铬粉末及溅射靶 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8877021B2 (zh) |
JP (1) | JP4727664B2 (zh) |
KR (1) | KR100952889B1 (zh) |
CN (1) | CN101198716B (zh) |
TW (1) | TW200704793A (zh) |
WO (1) | WO2006134694A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103060762A (zh) * | 2013-01-11 | 2013-04-24 | 江西科泰新材料有限公司 | 钼铌合金靶材的生产工艺 |
CN103946415A (zh) * | 2012-01-25 | 2014-07-23 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶 |
CN113165984A (zh) * | 2018-11-22 | 2021-07-23 | 东曹株式会社 | Cr-Si系烧结体 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009215617A (ja) * | 2008-03-11 | 2009-09-24 | Mitsui Mining & Smelting Co Ltd | コバルト、クロム、および白金からなるマトリックス相と酸化物相とを含有するスパッタリングターゲット材およびその製造方法 |
CN104126026B (zh) | 2012-02-23 | 2016-03-23 | 吉坤日矿日石金属株式会社 | 含有铬氧化物的强磁性材料溅射靶 |
JP5592022B2 (ja) | 2012-06-18 | 2014-09-17 | Jx日鉱日石金属株式会社 | 磁気記録膜用スパッタリングターゲット |
KR102297163B1 (ko) * | 2017-02-09 | 2021-09-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토마스크 블랭크의 제조 방법, 포토마스크 블랭크, 포토마스크의 제조 방법, 포토마스크 및 크롬 금속 타겟 |
JP6756886B1 (ja) | 2019-04-26 | 2020-09-16 | Jx金属株式会社 | ニオブ酸カリウムナトリウムスパッタリングターゲット |
WO2021205970A1 (ja) * | 2020-04-06 | 2021-10-14 | Jx金属株式会社 | ターゲット、焼結体及びこれらの製造方法 |
CN116786810A (zh) * | 2023-07-11 | 2023-09-22 | 涿州安泰六九新材料科技有限公司 | 一种溅射靶材用铬粉及其制备方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54141808A (en) | 1978-04-24 | 1979-11-05 | Akira Yamaguchi | Method of controlling porosity of chromic oxide sintered body |
US4296076A (en) * | 1979-01-15 | 1981-10-20 | British Chrome & Chemicals Ltd. | Chromic oxide production |
US4207295A (en) | 1979-02-13 | 1980-06-10 | Union Carbide Corporation | Processing of chromium ore |
SU1168511A1 (ru) | 1983-05-04 | 1985-07-23 | Предприятие П/Я А-7125 | Способ получени хромового ангидрида |
JPS6345125A (ja) | 1986-08-13 | 1988-02-26 | Tosoh Corp | 研摩剤 |
JPH02275814A (ja) * | 1989-04-18 | 1990-11-09 | Nippon Chem Ind Co Ltd | 化粧料 |
JPH04132659A (ja) | 1990-09-21 | 1992-05-06 | Brother Ind Ltd | 酸化クロム系複合焼結体 |
JPH04323366A (ja) * | 1991-04-19 | 1992-11-12 | Asahi Glass Co Ltd | スパッタリング用ターゲット及びその製造方法 |
US5320729A (en) * | 1991-07-19 | 1994-06-14 | Hitachi, Ltd. | Sputtering target |
US5561833A (en) * | 1993-03-11 | 1996-10-01 | Japan Metals & Chemicals Co., Ltd. | Method of making high oxygen chromium target |
US5397373A (en) | 1993-06-09 | 1995-03-14 | Japan Metals & Chemicals Co., Ltd. | Raw material for high oxygen chromium target |
JP3450370B2 (ja) | 1993-03-11 | 2003-09-22 | 日本重化学工業株式会社 | 高酸素クロムターゲット用原料およびその製造方法 |
JP2758836B2 (ja) * | 1994-09-08 | 1998-05-28 | 日本重化学工業株式会社 | 高酸素クロムターゲット用焼結成形体の製造方法 |
JP3733607B2 (ja) | 1995-01-20 | 2006-01-11 | 東ソー株式会社 | クロム系スパッタリングターゲットの製造方法 |
JP3127820B2 (ja) | 1996-02-28 | 2001-01-29 | 三菱マテリアル株式会社 | 強誘電体膜形成用スパッタリングターゲットおよびその製造方法 |
JP3791041B2 (ja) * | 1996-04-10 | 2006-06-28 | 東ソー株式会社 | クロム系スパッタリングターゲットの製造方法 |
US5866067A (en) * | 1997-03-24 | 1999-02-02 | Sony Corporation And Materials Research Corporation | High purity chromium metal by casting with controlled oxygen content |
JP4424889B2 (ja) | 2001-06-26 | 2010-03-03 | 三井金属鉱業株式会社 | 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法 |
KR100744017B1 (ko) | 2001-06-26 | 2007-07-30 | 미츠이 긴조쿠 고교 가부시키가이샤 | 고저항 투명 도전막용 스퍼터링 타겟 및 고저항 투명도전막의 제조방법 |
JP4276849B2 (ja) | 2003-01-27 | 2009-06-10 | 日鉱金属株式会社 | Ge−Cr合金スパッタリングターゲット |
WO2004079038A1 (ja) | 2003-03-04 | 2004-09-16 | Nikko Materials Co., Ltd. | スパッタリングターゲット、光情報記録媒体用薄膜及びその製造方法 |
WO2005024091A1 (ja) | 2003-09-03 | 2005-03-17 | Nikko Materials Co., Ltd. | スパッタリング用ターゲット |
JP4271684B2 (ja) | 2003-10-24 | 2009-06-03 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
WO2005093124A1 (ja) | 2004-03-26 | 2005-10-06 | Nippon Mining & Metals Co., Ltd. | Co-Cr-Pt-B系合金スパッタリングターゲット |
WO2006016473A1 (ja) | 2004-08-10 | 2006-02-16 | Nippon Mining & Metals Co., Ltd. | フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット |
-
2006
- 2006-03-10 JP JP2007521131A patent/JP4727664B2/ja active Active
- 2006-03-10 CN CN2006800215929A patent/CN101198716B/zh active Active
- 2006-03-10 WO PCT/JP2006/304737 patent/WO2006134694A1/ja active Application Filing
- 2006-03-10 KR KR1020077029620A patent/KR100952889B1/ko active IP Right Grant
- 2006-03-10 US US11/916,301 patent/US8877021B2/en active Active
- 2006-04-03 TW TW095111751A patent/TW200704793A/zh unknown
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103946415A (zh) * | 2012-01-25 | 2014-07-23 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶 |
CN103946415B (zh) * | 2012-01-25 | 2016-02-10 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶 |
CN103060762A (zh) * | 2013-01-11 | 2013-04-24 | 江西科泰新材料有限公司 | 钼铌合金靶材的生产工艺 |
CN103060762B (zh) * | 2013-01-11 | 2018-02-23 | 江西科泰新材料有限公司 | 钼铌合金靶材的生产工艺 |
CN113165984A (zh) * | 2018-11-22 | 2021-07-23 | 东曹株式会社 | Cr-Si系烧结体 |
CN113165984B (zh) * | 2018-11-22 | 2022-12-20 | 东曹株式会社 | Cr-Si系烧结体 |
US11967493B2 (en) | 2018-11-22 | 2024-04-23 | Tosoh Corporation | Cr—Si sintered body |
Also Published As
Publication number | Publication date |
---|---|
US20090139859A1 (en) | 2009-06-04 |
WO2006134694A1 (ja) | 2006-12-21 |
JPWO2006134694A1 (ja) | 2009-01-08 |
JP4727664B2 (ja) | 2011-07-20 |
TW200704793A (en) | 2007-02-01 |
TWI320431B (zh) | 2010-02-11 |
US8877021B2 (en) | 2014-11-04 |
CN101198716B (zh) | 2010-12-22 |
KR20080017045A (ko) | 2008-02-25 |
KR100952889B1 (ko) | 2010-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101198716B (zh) | 溅射靶用氧化铬粉末及溅射靶 | |
EP0698002B1 (en) | Densified micrograin refractory metal or solid solution (mixed metal) carbide ceramics | |
US20090053089A1 (en) | HOMOGENEOUS GRANULATED METAL BASED and METAL-CERAMIC BASED POWDERS | |
US9328412B2 (en) | Fe—Pt-based ferromagnetic material sputtering target | |
US10325762B2 (en) | Sputtering target for forming magnetic recording film and process for producing same | |
CN103930592B (zh) | 分散有C粒子的Fe-Pt型溅射靶 | |
CN103459656A (zh) | 磁记录膜用溅射靶 | |
CN103168328A (zh) | 磁记录膜用溅射靶及其制造方法 | |
WO2015146394A1 (ja) | Sb-Te基合金焼結体スパッタリングターゲット | |
CN104710163A (zh) | Izo溅射靶的制造方法 | |
US5561833A (en) | Method of making high oxygen chromium target | |
JP2008202074A (ja) | 微粒超硬合金 | |
JP3039909B2 (ja) | 磁気ヘッド用基板材料 | |
JPH10158826A (ja) | MgOターゲット及びその製造方法 | |
JP5646757B2 (ja) | 強磁性材スパッタリングターゲット | |
US5397373A (en) | Raw material for high oxygen chromium target | |
JP2758836B2 (ja) | 高酸素クロムターゲット用焼結成形体の製造方法 | |
JP4794863B2 (ja) | スパッタリングターゲット及び光情報記録媒体用薄膜 | |
KR102465463B1 (ko) | 내부식 코팅용 Ni계 비정질 합금 및 이의 제조방법 | |
JP2978052B2 (ja) | 粉末冶金用組成物およびその製造方法 | |
JPH09227981A (ja) | 超硬合金 | |
US20220267892A1 (en) | Fe-pt-bn-based sputtering target and production method therefor | |
JP4970581B2 (ja) | スパッタリングターゲット及び光情報記録媒体用薄膜 | |
JP3450370B2 (ja) | 高酸素クロムターゲット用原料およびその製造方法 | |
JP5160602B2 (ja) | スパッタリングターゲット及び光情報記録媒体用薄膜 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JX NIPPON MINING + METALS CO., LTD. Free format text: FORMER OWNER: NIPPON MINING + METALS CO., LTD. Effective date: 20110104 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20110104 Address after: Tokyo, Japan, Japan Patentee after: JX Nippon Mining & Metals Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Nippon Mining & Metals Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan, Japan Patentee before: JX Nippon Mining & Metals Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: JKS Metal Co.,Ltd. Address before: Tokyo, Japan Patentee before: JKS Metal Co.,Ltd. |
|
CP02 | Change in the address of a patent holder |