CN101111575B - 聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法 - Google Patents

聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法 Download PDF

Info

Publication number
CN101111575B
CN101111575B CN2006800035343A CN200680003534A CN101111575B CN 101111575 B CN101111575 B CN 101111575B CN 2006800035343 A CN2006800035343 A CN 2006800035343A CN 200680003534 A CN200680003534 A CN 200680003534A CN 101111575 B CN101111575 B CN 101111575B
Authority
CN
China
Prior art keywords
polysilazane
solvent
treating
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2006800035343A
Other languages
English (en)
Chinese (zh)
Other versions
CN101111575A (zh
Inventor
松尾英树
一山昌章
石川智规
青木宏幸
布鲁斯·凯克
约瑟夫·奥伯兰德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Publication of CN101111575A publication Critical patent/CN101111575A/zh
Application granted granted Critical
Publication of CN101111575B publication Critical patent/CN101111575B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00Chemical paint or ink removers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/50Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54Cleaning of wafer edges
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20Diluents or solvents
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/24Hydrocarbons
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • General Chemical & Material Sciences (AREA)
  • Paints Or Removers (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
CN2006800035343A 2005-02-02 2006-02-01 聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法 Expired - Lifetime CN101111575B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP026818/2005 2005-02-02
JP2005026818A JP4578993B2 (ja) 2005-02-02 2005-02-02 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
PCT/JP2006/301662 WO2006082848A1 (ja) 2005-02-02 2006-02-01 ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法

Publications (2)

Publication Number Publication Date
CN101111575A CN101111575A (zh) 2008-01-23
CN101111575B true CN101111575B (zh) 2010-06-23

Family

ID=36777232

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800035343A Expired - Lifetime CN101111575B (zh) 2005-02-02 2006-02-01 聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法

Country Status (6)

Country Link
US (1) US20080102211A1 (https=)
JP (1) JP4578993B2 (https=)
KR (1) KR101152694B1 (https=)
CN (1) CN101111575B (https=)
TW (1) TWI466929B (https=)
WO (1) WO2006082848A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI619849B (zh) * 2014-12-16 2018-04-01 三星Sdi 股份有限公司 二氧化矽薄膜用的沖洗溶液及其生產方法
US10020185B2 (en) 2014-10-07 2018-07-10 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
US10093830B2 (en) 2014-12-19 2018-10-09 Samsung Sdi Co., Ltd. Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer
US10106687B2 (en) 2015-07-31 2018-10-23 Samsung Sdi Co., Ltd. Composition for forming silica layer, method for manufacturing silica layer and silica layer
US10427944B2 (en) 2014-12-19 2019-10-01 Samsung Sdi Co., Ltd. Composition for forming a silica based layer, silica based layer, and electronic device

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3479648B2 (ja) * 2001-12-27 2003-12-15 クラリアント インターナショナル リミテッド ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
JP4621613B2 (ja) * 2006-03-09 2011-01-26 株式会社東芝 半導体装置の製造方法
CN102169995B (zh) 2006-12-15 2014-09-24 东京应化工业株式会社 负极基材
JP5160189B2 (ja) * 2007-10-26 2013-03-13 AzエレクトロニックマテリアルズIp株式会社 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物
US8084406B2 (en) * 2007-12-14 2011-12-27 Lam Research Corporation Apparatus for particle removal by single-phase and two-phase media
JP5602346B2 (ja) * 2008-06-17 2014-10-08 株式会社ロッテ ユーカリ抽出物の調製方法
JP4718584B2 (ja) * 2008-07-01 2011-07-06 ヤスハラケミカル株式会社 ポリシラザン溶解用処理液、およびこれを用いた半導体装置の製造方法
US8227182B2 (en) * 2008-08-11 2012-07-24 Samsung Electronics Co., Ltd. Methods of forming a photosensitive film
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
JP5410207B2 (ja) * 2009-09-04 2014-02-05 AzエレクトロニックマテリアルズIp株式会社 シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液
JP5539687B2 (ja) * 2009-09-10 2014-07-02 東レ・ダウコーニング株式会社 アルキル変性ポリジメチルシロキサン精製品の製造方法、該精製品を含有する化粧料原料および化粧料
WO2011078446A1 (en) * 2009-12-23 2011-06-30 Dnf Co., Ltd. Polysilazane treating solvent and method for treating polysilazane using the same
JP5172867B2 (ja) * 2010-01-07 2013-03-27 AzエレクトロニックマテリアルズIp株式会社 ポリシラザンを含むコーティング組成物
JP2012184378A (ja) * 2011-03-08 2012-09-27 Fukugo Shizai Kk 噴射式密閉容器入ポリシラザンコーティング液およびポリシラザンコーティング方法
FR2973808B1 (fr) * 2011-04-06 2015-01-16 Total Raffinage Marketing Composition de fluide special et utilisation
KR101638655B1 (ko) * 2011-05-24 2016-07-11 도오꾜오까고오교 가부시끼가이샤 박리용 조성물 및 박리 방법
KR101367252B1 (ko) * 2011-11-10 2014-02-25 제일모직 주식회사 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법
JP2014050803A (ja) 2012-09-07 2014-03-20 Toshiba Corp 回転塗布装置および回転塗布方法
JP5985406B2 (ja) 2013-01-31 2016-09-06 株式会社東芝 半導体装置の製造方法及び半導体装置の製造装置
KR101692757B1 (ko) 2013-04-18 2017-01-04 제일모직 주식회사 절연막용 린스액 및 절연막의 린스 방법
JP2014213318A (ja) * 2013-04-30 2014-11-17 チェイル インダストリーズインコーポレイテッド 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜
JP6207995B2 (ja) * 2013-12-13 2017-10-04 株式会社Adeka ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法
US20160172188A1 (en) * 2014-12-16 2016-06-16 Samsung Sdi Co., Ltd. Rinse solution for silica thin film, method of producing silica thin film, and silica thin film
JP2017200861A (ja) * 2016-05-02 2017-11-09 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ 緻密なシリカ質膜形成用組成物
CN106432738B (zh) * 2016-10-12 2019-09-24 中国科学院化学研究所 一种含氟聚硅氮烷及其制备方法
CN110925779A (zh) * 2019-12-11 2020-03-27 大连东泰产业废弃物处理有限公司 一种含有全氢聚硅氮烷废有机溶剂用于焚烧炉的利用方法
JP2021147457A (ja) * 2020-03-18 2021-09-27 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH ポリシラン組成物からシラン発生を抑制するための安定化剤、およびシラン発生を抑制する方法
NO348381B1 (en) * 2020-07-02 2024-12-23 Nanize As Polysilazane coating method and device
US20240294782A1 (en) * 2021-07-09 2024-09-05 Threebond Co., Ltd. Curable composition, cured film, and article

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759281A (fr) * 1969-11-24 1971-05-24 Dow Corning Procede et composition facilitant le nettoyage de fours et appareils similaires
US3983047A (en) * 1974-11-29 1976-09-28 The United States Of America As Represented By The Secretary Of The Navy Decal removal composition
US4106901A (en) * 1976-08-31 1978-08-15 Star Chemical, Inc. Emulsifier-solvent scour composition and method of treating textiles therewith
US4664721A (en) * 1981-12-07 1987-05-12 Intercontinental Chemical Corporation Printing screen cleaning and reclaiming compositions
US5151390A (en) * 1986-06-13 1992-09-29 Toa Nenryo Kogyo Kabushiki Kaisha Silicon nitride-based fibers and composite material reinforced with fibers
US5164469A (en) * 1987-11-17 1992-11-17 Japan Synthetic Rubber Co., Ltd. Transparent resin material
US5151219A (en) * 1988-01-06 1992-09-29 Ocg Microelectronic Materials, Inc. Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates
US5030744A (en) * 1989-03-23 1991-07-09 Tonen Corporation Polyborosilazane and process for producing same
US5354506A (en) * 1989-09-28 1994-10-11 Albemarle Corporation Preceramic compositions and ceramic products
GB2243842B (en) 1990-04-12 1993-09-22 Electrolube Limited Method and compositions for circuit board cleaning using ether-containing terpenoid compounds
US5338475A (en) * 1991-08-16 1994-08-16 Sterling Drug, Inc. Carpet cleaning composition with bleach
JP2704332B2 (ja) * 1991-10-11 1998-01-26 株式会社ノリタケカンパニーリミテド 炭素繊維強化窒化珪素質ナノ複合材及びその製造方法
JP3283276B2 (ja) * 1991-12-04 2002-05-20 東燃ゼネラル石油株式会社 改質ポリシラザン及びその製造方法
US5340493A (en) * 1992-08-20 1994-08-23 Principato Richard J Low-volatility cleaning compositions for printing inks
US5474807A (en) * 1992-09-30 1995-12-12 Hoya Corporation Method for applying or removing coatings at a confined peripheral region of a substrate
KR950034365A (ko) * 1994-05-24 1995-12-28 윌리엄 이. 힐러 평판 디스플레이의 애노드 플레이트 및 이의 제조 방법
JP3496895B2 (ja) * 1994-10-20 2004-02-16 東京応化工業株式会社 半導体ウェーハの処理方法
JPH08279445A (ja) * 1995-04-07 1996-10-22 Tokyo Ohka Kogyo Co Ltd Sog膜形成方法
JPH09125006A (ja) * 1995-10-30 1997-05-13 Tokyo Ohka Kogyo Co Ltd ポリシラザン系塗布液及びそれを用いたセラミックス被膜の形成方法
JP3740207B2 (ja) * 1996-02-13 2006-02-01 大日本スクリーン製造株式会社 基板表面に形成されたシリカ系被膜の膜溶解方法
JPH1098036A (ja) * 1996-09-20 1998-04-14 Tonen Corp シリカ質パターンの形成方法
JPH10212114A (ja) * 1996-11-26 1998-08-11 Tonen Corp SiO2系セラミックス膜の形成方法
JP4053105B2 (ja) * 1996-12-30 2008-02-27 Azエレクトロニックマテリアルズ株式会社 シリカ質セラミックス被膜の形成方法及び同方法で形成されたセラミックス被膜
JPH11233510A (ja) * 1998-02-16 1999-08-27 Tonen Corp 裾引き形状を有するSiO2系被膜の形成方法
JP2000012536A (ja) * 1998-06-24 2000-01-14 Tokyo Ohka Kogyo Co Ltd シリカ被膜形成方法
US6413202B1 (en) * 1999-01-21 2002-07-02 Alliedsignal, Inc. Solvent systems for polymeric dielectric materials
JP5291275B2 (ja) * 2000-07-27 2013-09-18 有限会社コンタミネーション・コントロール・サービス コーティング膜が施された部材及びコーティング膜の製造方法
JP4722269B2 (ja) * 2000-08-29 2011-07-13 Azエレクトロニックマテリアルズ株式会社 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法
JP3722418B2 (ja) * 2000-12-08 2005-11-30 信越化学工業株式会社 反射防止膜及びこれを利用した光学部材
KR100354441B1 (en) * 2000-12-27 2002-09-28 Samsung Electronics Co Ltd Method for fabricating spin-on-glass insulation layer of semiconductor device
TWI259844B (en) * 2001-04-27 2006-08-11 Clariant Int Ltd Anti-fouling coating solution containing inorganic polysilazane
JP2003100865A (ja) * 2001-09-21 2003-04-04 Catalysts & Chem Ind Co Ltd 半導体基板の製造方法および半導体基板
JP3479648B2 (ja) * 2001-12-27 2003-12-15 クラリアント インターナショナル リミテッド ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
JP4128394B2 (ja) * 2002-05-16 2008-07-30 クラリアント インターナショナル リミテッド ポリシラザン含有コーティング膜の親水性促進剤及び親水性維持剤
EP1388818B1 (en) * 2002-08-10 2011-06-22 Samsung Electronics Co., Ltd. Method and apparatus for rendering image signal
JP2004155834A (ja) * 2002-11-01 2004-06-03 Clariant Internatl Ltd ポリシラザン含有コーティング液

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10020185B2 (en) 2014-10-07 2018-07-10 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
TWI619849B (zh) * 2014-12-16 2018-04-01 三星Sdi 股份有限公司 二氧化矽薄膜用的沖洗溶液及其生產方法
US10093830B2 (en) 2014-12-19 2018-10-09 Samsung Sdi Co., Ltd. Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer
US10427944B2 (en) 2014-12-19 2019-10-01 Samsung Sdi Co., Ltd. Composition for forming a silica based layer, silica based layer, and electronic device
US10106687B2 (en) 2015-07-31 2018-10-23 Samsung Sdi Co., Ltd. Composition for forming silica layer, method for manufacturing silica layer and silica layer

Also Published As

Publication number Publication date
WO2006082848A1 (ja) 2006-08-10
US20080102211A1 (en) 2008-05-01
KR101152694B1 (ko) 2012-06-15
TW200632006A (en) 2006-09-16
JP4578993B2 (ja) 2010-11-10
JP2006216704A (ja) 2006-08-17
KR20070108214A (ko) 2007-11-08
TWI466929B (zh) 2015-01-01
CN101111575A (zh) 2008-01-23

Similar Documents

Publication Publication Date Title
CN101111575B (zh) 聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法
JP3479648B2 (ja) ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法
EP1035183B1 (en) Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film
JP6322068B2 (ja) オプトエレクトロニクスデバイス用の組成物、層、及びフィルム、並びにこれらの使用
US9976037B2 (en) Composition for treating surface of substrate, method and device
US20040038047A1 (en) Substrate coated with silica-containing film with low-dielectric constant
JP2004532514A (ja) 接着性が増大した低欠陥密度のbeol相互接続用低誘電率レベル間誘電体被膜を製造する方法
KR101178215B1 (ko) 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법
JP2002030249A (ja) 低誘電率シリカ系被膜形成用塗布液および低誘電率シリカ系被膜付基板
CN101287777B (zh) 包含偶联的电介质层和金属层的半导体器件、其制造方法和用于偶联半导体器件中的电介质层和金属层的材料
JP6207995B2 (ja) ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法
KR20040049802A (ko) 화학 기계 연마 스토퍼, 그의 제조 방법 및 화학 기계연마 방법
US20090115031A1 (en) Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
WO2023114214A1 (en) Spin coatable metal-containing compositions and methods of using the same
JP2014203858A (ja) ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法
WO2011078446A1 (en) Polysilazane treating solvent and method for treating polysilazane using the same
KR102443481B1 (ko) 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔의 처리 방법
CN103946361B (zh) 聚硅氧氮烷氢氧化物薄膜清洗溶液及使用其的聚硅氧氮烷氢氧化物薄膜图案形成方法
KR102416225B1 (ko) 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔의 처리 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K.

Free format text: FORMER OWNER: AZ ELECTRONIC MATERIAL (JAPAN) CO., LTD.

Effective date: 20120521

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20120521

Address after: Tokyo, Japan

Patentee after: AZ electronic material IP (Japan) Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: AZ ELECTRONIC MATERIALS (JAPAN) Kabushiki Kaisha

ASS Succession or assignment of patent right

Owner name: MERCK PATENT GMBH

Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K.

Effective date: 20150407

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20150407

Address after: Darmstadt, Germany

Patentee after: MERCK PATENT GmbH

Address before: Tokyo, Japan

Patentee before: AZ electronic material IP (Japan) Co.,Ltd.

CX01 Expiry of patent term

Granted publication date: 20100623

CX01 Expiry of patent term