JP4578993B2 - ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 - Google Patents
ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 Download PDFInfo
- Publication number
- JP4578993B2 JP4578993B2 JP2005026818A JP2005026818A JP4578993B2 JP 4578993 B2 JP4578993 B2 JP 4578993B2 JP 2005026818 A JP2005026818 A JP 2005026818A JP 2005026818 A JP2005026818 A JP 2005026818A JP 4578993 B2 JP4578993 B2 JP 4578993B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilazane
- solvent
- substrate
- film
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
- H10P70/54—Cleaning of wafer edges
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/20—Diluents or solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Paints Or Removers (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005026818A JP4578993B2 (ja) | 2005-02-02 | 2005-02-02 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
| TW95103289A TWI466929B (zh) | 2005-02-02 | 2006-01-27 | 聚矽氮烷處理溶劑及用此溶劑之聚矽氮烷之處理方法 |
| CN2006800035343A CN101111575B (zh) | 2005-02-02 | 2006-02-01 | 聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法 |
| KR1020077020028A KR101152694B1 (ko) | 2005-02-02 | 2006-02-01 | 폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법 |
| PCT/JP2006/301662 WO2006082848A1 (ja) | 2005-02-02 | 2006-02-01 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
| US11/795,100 US20080102211A1 (en) | 2005-02-02 | 2006-02-01 | Polysilazane-Treating Solvent and Method for Treating Polysilazane by Using Such Solvent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005026818A JP4578993B2 (ja) | 2005-02-02 | 2005-02-02 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006216704A JP2006216704A (ja) | 2006-08-17 |
| JP2006216704A5 JP2006216704A5 (https=) | 2008-01-31 |
| JP4578993B2 true JP4578993B2 (ja) | 2010-11-10 |
Family
ID=36777232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005026818A Expired - Lifetime JP4578993B2 (ja) | 2005-02-02 | 2005-02-02 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080102211A1 (https=) |
| JP (1) | JP4578993B2 (https=) |
| KR (1) | KR101152694B1 (https=) |
| CN (1) | CN101111575B (https=) |
| TW (1) | TWI466929B (https=) |
| WO (1) | WO2006082848A1 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
| JP4621613B2 (ja) * | 2006-03-09 | 2011-01-26 | 株式会社東芝 | 半導体装置の製造方法 |
| CN102169995B (zh) | 2006-12-15 | 2014-09-24 | 东京应化工业株式会社 | 负极基材 |
| JP5160189B2 (ja) * | 2007-10-26 | 2013-03-13 | AzエレクトロニックマテリアルズIp株式会社 | 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物 |
| US8084406B2 (en) * | 2007-12-14 | 2011-12-27 | Lam Research Corporation | Apparatus for particle removal by single-phase and two-phase media |
| JP5602346B2 (ja) * | 2008-06-17 | 2014-10-08 | 株式会社ロッテ | ユーカリ抽出物の調製方法 |
| JP4718584B2 (ja) * | 2008-07-01 | 2011-07-06 | ヤスハラケミカル株式会社 | ポリシラザン溶解用処理液、およびこれを用いた半導体装置の製造方法 |
| US8227182B2 (en) * | 2008-08-11 | 2012-07-24 | Samsung Electronics Co., Ltd. | Methods of forming a photosensitive film |
| US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
| JP5410207B2 (ja) * | 2009-09-04 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液 |
| JP5539687B2 (ja) * | 2009-09-10 | 2014-07-02 | 東レ・ダウコーニング株式会社 | アルキル変性ポリジメチルシロキサン精製品の製造方法、該精製品を含有する化粧料原料および化粧料 |
| WO2011078446A1 (en) * | 2009-12-23 | 2011-06-30 | Dnf Co., Ltd. | Polysilazane treating solvent and method for treating polysilazane using the same |
| JP5172867B2 (ja) * | 2010-01-07 | 2013-03-27 | AzエレクトロニックマテリアルズIp株式会社 | ポリシラザンを含むコーティング組成物 |
| JP2012184378A (ja) * | 2011-03-08 | 2012-09-27 | Fukugo Shizai Kk | 噴射式密閉容器入ポリシラザンコーティング液およびポリシラザンコーティング方法 |
| FR2973808B1 (fr) * | 2011-04-06 | 2015-01-16 | Total Raffinage Marketing | Composition de fluide special et utilisation |
| KR101638655B1 (ko) * | 2011-05-24 | 2016-07-11 | 도오꾜오까고오교 가부시끼가이샤 | 박리용 조성물 및 박리 방법 |
| KR101367252B1 (ko) * | 2011-11-10 | 2014-02-25 | 제일모직 주식회사 | 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법 |
| JP2014050803A (ja) | 2012-09-07 | 2014-03-20 | Toshiba Corp | 回転塗布装置および回転塗布方法 |
| JP5985406B2 (ja) | 2013-01-31 | 2016-09-06 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置の製造装置 |
| KR101692757B1 (ko) | 2013-04-18 | 2017-01-04 | 제일모직 주식회사 | 절연막용 린스액 및 절연막의 린스 방법 |
| JP2014213318A (ja) * | 2013-04-30 | 2014-11-17 | チェイル インダストリーズインコーポレイテッド | 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜 |
| JP6207995B2 (ja) * | 2013-12-13 | 2017-10-04 | 株式会社Adeka | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 |
| US10020185B2 (en) | 2014-10-07 | 2018-07-10 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
| KR101879414B1 (ko) * | 2014-12-16 | 2018-07-17 | 삼성에스디아이 주식회사 | 실리카 박막용 린스액, 실리카 박막의 제조방법, 및 실리카 박막 |
| US20160172188A1 (en) * | 2014-12-16 | 2016-06-16 | Samsung Sdi Co., Ltd. | Rinse solution for silica thin film, method of producing silica thin film, and silica thin film |
| KR101837971B1 (ko) | 2014-12-19 | 2018-03-13 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 |
| KR101833800B1 (ko) | 2014-12-19 | 2018-03-02 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자 |
| KR20170014946A (ko) | 2015-07-31 | 2017-02-08 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 |
| JP2017200861A (ja) * | 2016-05-02 | 2017-11-09 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 緻密なシリカ質膜形成用組成物 |
| CN106432738B (zh) * | 2016-10-12 | 2019-09-24 | 中国科学院化学研究所 | 一种含氟聚硅氮烷及其制备方法 |
| CN110925779A (zh) * | 2019-12-11 | 2020-03-27 | 大连东泰产业废弃物处理有限公司 | 一种含有全氢聚硅氮烷废有机溶剂用于焚烧炉的利用方法 |
| JP2021147457A (ja) * | 2020-03-18 | 2021-09-27 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | ポリシラン組成物からシラン発生を抑制するための安定化剤、およびシラン発生を抑制する方法 |
| NO348381B1 (en) * | 2020-07-02 | 2024-12-23 | Nanize As | Polysilazane coating method and device |
| US20240294782A1 (en) * | 2021-07-09 | 2024-09-05 | Threebond Co., Ltd. | Curable composition, cured film, and article |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE759281A (fr) * | 1969-11-24 | 1971-05-24 | Dow Corning | Procede et composition facilitant le nettoyage de fours et appareils similaires |
| US3983047A (en) * | 1974-11-29 | 1976-09-28 | The United States Of America As Represented By The Secretary Of The Navy | Decal removal composition |
| US4106901A (en) * | 1976-08-31 | 1978-08-15 | Star Chemical, Inc. | Emulsifier-solvent scour composition and method of treating textiles therewith |
| US4664721A (en) * | 1981-12-07 | 1987-05-12 | Intercontinental Chemical Corporation | Printing screen cleaning and reclaiming compositions |
| US5151390A (en) * | 1986-06-13 | 1992-09-29 | Toa Nenryo Kogyo Kabushiki Kaisha | Silicon nitride-based fibers and composite material reinforced with fibers |
| US5164469A (en) * | 1987-11-17 | 1992-11-17 | Japan Synthetic Rubber Co., Ltd. | Transparent resin material |
| US5151219A (en) * | 1988-01-06 | 1992-09-29 | Ocg Microelectronic Materials, Inc. | Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates |
| US5030744A (en) * | 1989-03-23 | 1991-07-09 | Tonen Corporation | Polyborosilazane and process for producing same |
| US5354506A (en) * | 1989-09-28 | 1994-10-11 | Albemarle Corporation | Preceramic compositions and ceramic products |
| GB2243842B (en) | 1990-04-12 | 1993-09-22 | Electrolube Limited | Method and compositions for circuit board cleaning using ether-containing terpenoid compounds |
| US5338475A (en) * | 1991-08-16 | 1994-08-16 | Sterling Drug, Inc. | Carpet cleaning composition with bleach |
| JP2704332B2 (ja) * | 1991-10-11 | 1998-01-26 | 株式会社ノリタケカンパニーリミテド | 炭素繊維強化窒化珪素質ナノ複合材及びその製造方法 |
| JP3283276B2 (ja) * | 1991-12-04 | 2002-05-20 | 東燃ゼネラル石油株式会社 | 改質ポリシラザン及びその製造方法 |
| US5340493A (en) * | 1992-08-20 | 1994-08-23 | Principato Richard J | Low-volatility cleaning compositions for printing inks |
| US5474807A (en) * | 1992-09-30 | 1995-12-12 | Hoya Corporation | Method for applying or removing coatings at a confined peripheral region of a substrate |
| KR950034365A (ko) * | 1994-05-24 | 1995-12-28 | 윌리엄 이. 힐러 | 평판 디스플레이의 애노드 플레이트 및 이의 제조 방법 |
| JP3496895B2 (ja) * | 1994-10-20 | 2004-02-16 | 東京応化工業株式会社 | 半導体ウェーハの処理方法 |
| JPH08279445A (ja) * | 1995-04-07 | 1996-10-22 | Tokyo Ohka Kogyo Co Ltd | Sog膜形成方法 |
| JPH09125006A (ja) * | 1995-10-30 | 1997-05-13 | Tokyo Ohka Kogyo Co Ltd | ポリシラザン系塗布液及びそれを用いたセラミックス被膜の形成方法 |
| JP3740207B2 (ja) * | 1996-02-13 | 2006-02-01 | 大日本スクリーン製造株式会社 | 基板表面に形成されたシリカ系被膜の膜溶解方法 |
| JPH1098036A (ja) * | 1996-09-20 | 1998-04-14 | Tonen Corp | シリカ質パターンの形成方法 |
| JPH10212114A (ja) * | 1996-11-26 | 1998-08-11 | Tonen Corp | SiO2系セラミックス膜の形成方法 |
| JP4053105B2 (ja) * | 1996-12-30 | 2008-02-27 | Azエレクトロニックマテリアルズ株式会社 | シリカ質セラミックス被膜の形成方法及び同方法で形成されたセラミックス被膜 |
| JPH11233510A (ja) * | 1998-02-16 | 1999-08-27 | Tonen Corp | 裾引き形状を有するSiO2系被膜の形成方法 |
| JP2000012536A (ja) * | 1998-06-24 | 2000-01-14 | Tokyo Ohka Kogyo Co Ltd | シリカ被膜形成方法 |
| US6413202B1 (en) * | 1999-01-21 | 2002-07-02 | Alliedsignal, Inc. | Solvent systems for polymeric dielectric materials |
| JP5291275B2 (ja) * | 2000-07-27 | 2013-09-18 | 有限会社コンタミネーション・コントロール・サービス | コーティング膜が施された部材及びコーティング膜の製造方法 |
| JP4722269B2 (ja) * | 2000-08-29 | 2011-07-13 | Azエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法 |
| JP3722418B2 (ja) * | 2000-12-08 | 2005-11-30 | 信越化学工業株式会社 | 反射防止膜及びこれを利用した光学部材 |
| KR100354441B1 (en) * | 2000-12-27 | 2002-09-28 | Samsung Electronics Co Ltd | Method for fabricating spin-on-glass insulation layer of semiconductor device |
| TWI259844B (en) * | 2001-04-27 | 2006-08-11 | Clariant Int Ltd | Anti-fouling coating solution containing inorganic polysilazane |
| JP2003100865A (ja) * | 2001-09-21 | 2003-04-04 | Catalysts & Chem Ind Co Ltd | 半導体基板の製造方法および半導体基板 |
| JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
| JP4128394B2 (ja) * | 2002-05-16 | 2008-07-30 | クラリアント インターナショナル リミテッド | ポリシラザン含有コーティング膜の親水性促進剤及び親水性維持剤 |
| EP1388818B1 (en) * | 2002-08-10 | 2011-06-22 | Samsung Electronics Co., Ltd. | Method and apparatus for rendering image signal |
| JP2004155834A (ja) * | 2002-11-01 | 2004-06-03 | Clariant Internatl Ltd | ポリシラザン含有コーティング液 |
-
2005
- 2005-02-02 JP JP2005026818A patent/JP4578993B2/ja not_active Expired - Lifetime
-
2006
- 2006-01-27 TW TW95103289A patent/TWI466929B/zh not_active IP Right Cessation
- 2006-02-01 WO PCT/JP2006/301662 patent/WO2006082848A1/ja not_active Ceased
- 2006-02-01 KR KR1020077020028A patent/KR101152694B1/ko not_active Expired - Lifetime
- 2006-02-01 US US11/795,100 patent/US20080102211A1/en not_active Abandoned
- 2006-02-01 CN CN2006800035343A patent/CN101111575B/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006082848A1 (ja) | 2006-08-10 |
| US20080102211A1 (en) | 2008-05-01 |
| KR101152694B1 (ko) | 2012-06-15 |
| TW200632006A (en) | 2006-09-16 |
| JP2006216704A (ja) | 2006-08-17 |
| KR20070108214A (ko) | 2007-11-08 |
| TWI466929B (zh) | 2015-01-01 |
| CN101111575B (zh) | 2010-06-23 |
| CN101111575A (zh) | 2008-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4578993B2 (ja) | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 | |
| JP3479648B2 (ja) | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 | |
| US6451436B1 (en) | Coating liquid for forming a silica-containing film with a low-dielectric constant and substrate coated with such a film | |
| JP6322068B2 (ja) | オプトエレクトロニクスデバイス用の組成物、層、及びフィルム、並びにこれらの使用 | |
| KR100561884B1 (ko) | 낮은 유전 상수를 갖는 유전 물질의 제조용 조성물 | |
| KR101178215B1 (ko) | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔 처리 방법 | |
| TWI758813B (zh) | 組成物及接著性聚合物之洗淨方法 | |
| JPWO2001048806A1 (ja) | 低誘電率シリカ系被膜の形成方法および低誘電率被膜付半導体基板 | |
| TW201441365A (zh) | 用於絕緣層的清洗液以及清洗絕緣層的方法 | |
| JP6207995B2 (ja) | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 | |
| TWI328024B (en) | Composition for forming silica based film | |
| WO2025096565A1 (en) | Etching compositions | |
| JP2014203858A (ja) | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 | |
| WO2023114214A1 (en) | Spin coatable metal-containing compositions and methods of using the same | |
| JP2002201416A (ja) | 半導体用シリカ系被膜形成用塗布液、半導体用シリカ系被膜及び半導体装置 | |
| WO2011078446A1 (en) | Polysilazane treating solvent and method for treating polysilazane using the same | |
| JPH06240455A (ja) | 酸化ケイ素膜の形成方法 | |
| KR101400184B1 (ko) | 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법 | |
| KR20170107276A (ko) | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔의 처리 방법 | |
| KR102416225B1 (ko) | 폴리실라잔 처리 용제 및 이를 이용한 폴리실라잔의 처리 방법 | |
| CN103946361B (zh) | 聚硅氧氮烷氢氧化物薄膜清洗溶液及使用其的聚硅氧氮烷氢氧化物薄膜图案形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071004 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071004 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091211 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091215 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100209 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100727 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100825 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4578993 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |