KR101152694B1 - 폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법 - Google Patents
폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법 Download PDFInfo
- Publication number
- KR101152694B1 KR101152694B1 KR1020077020028A KR20077020028A KR101152694B1 KR 101152694 B1 KR101152694 B1 KR 101152694B1 KR 1020077020028 A KR1020077020028 A KR 1020077020028A KR 20077020028 A KR20077020028 A KR 20077020028A KR 101152694 B1 KR101152694 B1 KR 101152694B1
- Authority
- KR
- South Korea
- Prior art keywords
- polysilazane
- solvent
- good
- good example
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
- H10P70/54—Cleaning of wafer edges
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/20—Diluents or solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Paints Or Removers (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2005-00026818 | 2005-02-02 | ||
| JP2005026818A JP4578993B2 (ja) | 2005-02-02 | 2005-02-02 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
| PCT/JP2006/301662 WO2006082848A1 (ja) | 2005-02-02 | 2006-02-01 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070108214A KR20070108214A (ko) | 2007-11-08 |
| KR101152694B1 true KR101152694B1 (ko) | 2012-06-15 |
Family
ID=36777232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077020028A Expired - Lifetime KR101152694B1 (ko) | 2005-02-02 | 2006-02-01 | 폴리실라잔 처리용 용매 및 당해 용매를 사용하는폴리실라잔의 처리방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080102211A1 (https=) |
| JP (1) | JP4578993B2 (https=) |
| KR (1) | KR101152694B1 (https=) |
| CN (1) | CN101111575B (https=) |
| TW (1) | TWI466929B (https=) |
| WO (1) | WO2006082848A1 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
| JP4621613B2 (ja) * | 2006-03-09 | 2011-01-26 | 株式会社東芝 | 半導体装置の製造方法 |
| CN102169995B (zh) | 2006-12-15 | 2014-09-24 | 东京应化工业株式会社 | 负极基材 |
| JP5160189B2 (ja) * | 2007-10-26 | 2013-03-13 | AzエレクトロニックマテリアルズIp株式会社 | 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物 |
| US8084406B2 (en) * | 2007-12-14 | 2011-12-27 | Lam Research Corporation | Apparatus for particle removal by single-phase and two-phase media |
| JP5602346B2 (ja) * | 2008-06-17 | 2014-10-08 | 株式会社ロッテ | ユーカリ抽出物の調製方法 |
| JP4718584B2 (ja) * | 2008-07-01 | 2011-07-06 | ヤスハラケミカル株式会社 | ポリシラザン溶解用処理液、およびこれを用いた半導体装置の製造方法 |
| US8227182B2 (en) * | 2008-08-11 | 2012-07-24 | Samsung Electronics Co., Ltd. | Methods of forming a photosensitive film |
| US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
| JP5410207B2 (ja) * | 2009-09-04 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液 |
| JP5539687B2 (ja) * | 2009-09-10 | 2014-07-02 | 東レ・ダウコーニング株式会社 | アルキル変性ポリジメチルシロキサン精製品の製造方法、該精製品を含有する化粧料原料および化粧料 |
| WO2011078446A1 (en) * | 2009-12-23 | 2011-06-30 | Dnf Co., Ltd. | Polysilazane treating solvent and method for treating polysilazane using the same |
| JP5172867B2 (ja) * | 2010-01-07 | 2013-03-27 | AzエレクトロニックマテリアルズIp株式会社 | ポリシラザンを含むコーティング組成物 |
| JP2012184378A (ja) * | 2011-03-08 | 2012-09-27 | Fukugo Shizai Kk | 噴射式密閉容器入ポリシラザンコーティング液およびポリシラザンコーティング方法 |
| FR2973808B1 (fr) * | 2011-04-06 | 2015-01-16 | Total Raffinage Marketing | Composition de fluide special et utilisation |
| KR101638655B1 (ko) * | 2011-05-24 | 2016-07-11 | 도오꾜오까고오교 가부시끼가이샤 | 박리용 조성물 및 박리 방법 |
| KR101367252B1 (ko) * | 2011-11-10 | 2014-02-25 | 제일모직 주식회사 | 수소화폴리실록사잔 박막용 린스액 및 이를 이용한 수소화폴리실록사잔 박막의 패턴 형성 방법 |
| JP2014050803A (ja) | 2012-09-07 | 2014-03-20 | Toshiba Corp | 回転塗布装置および回転塗布方法 |
| JP5985406B2 (ja) | 2013-01-31 | 2016-09-06 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置の製造装置 |
| KR101692757B1 (ko) | 2013-04-18 | 2017-01-04 | 제일모직 주식회사 | 절연막용 린스액 및 절연막의 린스 방법 |
| JP2014213318A (ja) * | 2013-04-30 | 2014-11-17 | チェイル インダストリーズインコーポレイテッド | 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜 |
| JP6207995B2 (ja) * | 2013-12-13 | 2017-10-04 | 株式会社Adeka | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 |
| US10020185B2 (en) | 2014-10-07 | 2018-07-10 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
| KR101879414B1 (ko) * | 2014-12-16 | 2018-07-17 | 삼성에스디아이 주식회사 | 실리카 박막용 린스액, 실리카 박막의 제조방법, 및 실리카 박막 |
| US20160172188A1 (en) * | 2014-12-16 | 2016-06-16 | Samsung Sdi Co., Ltd. | Rinse solution for silica thin film, method of producing silica thin film, and silica thin film |
| KR101837971B1 (ko) | 2014-12-19 | 2018-03-13 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 |
| KR101833800B1 (ko) | 2014-12-19 | 2018-03-02 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자 |
| KR20170014946A (ko) | 2015-07-31 | 2017-02-08 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 |
| JP2017200861A (ja) * | 2016-05-02 | 2017-11-09 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 緻密なシリカ質膜形成用組成物 |
| CN106432738B (zh) * | 2016-10-12 | 2019-09-24 | 中国科学院化学研究所 | 一种含氟聚硅氮烷及其制备方法 |
| CN110925779A (zh) * | 2019-12-11 | 2020-03-27 | 大连东泰产业废弃物处理有限公司 | 一种含有全氢聚硅氮烷废有机溶剂用于焚烧炉的利用方法 |
| JP2021147457A (ja) * | 2020-03-18 | 2021-09-27 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | ポリシラン組成物からシラン発生を抑制するための安定化剤、およびシラン発生を抑制する方法 |
| NO348381B1 (en) * | 2020-07-02 | 2024-12-23 | Nanize As | Polysilazane coating method and device |
| US20240294782A1 (en) * | 2021-07-09 | 2024-09-05 | Threebond Co., Ltd. | Curable composition, cured film, and article |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2243842A (en) | 1990-04-12 | 1991-11-13 | Electrolube Limited | Circuit board cleaning |
| JPH08124825A (ja) * | 1994-10-20 | 1996-05-17 | Tokyo Ohka Kogyo Co Ltd | 半導体ウェーハの処理方法 |
| JPH11233510A (ja) | 1998-02-16 | 1999-08-27 | Tonen Corp | 裾引き形状を有するSiO2系被膜の形成方法 |
| JP2003197611A (ja) | 2001-12-27 | 2003-07-11 | Clariant (Japan) Kk | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
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| KR950034365A (ko) * | 1994-05-24 | 1995-12-28 | 윌리엄 이. 힐러 | 평판 디스플레이의 애노드 플레이트 및 이의 제조 방법 |
| JPH08279445A (ja) * | 1995-04-07 | 1996-10-22 | Tokyo Ohka Kogyo Co Ltd | Sog膜形成方法 |
| JPH09125006A (ja) * | 1995-10-30 | 1997-05-13 | Tokyo Ohka Kogyo Co Ltd | ポリシラザン系塗布液及びそれを用いたセラミックス被膜の形成方法 |
| JP3740207B2 (ja) * | 1996-02-13 | 2006-02-01 | 大日本スクリーン製造株式会社 | 基板表面に形成されたシリカ系被膜の膜溶解方法 |
| JPH1098036A (ja) * | 1996-09-20 | 1998-04-14 | Tonen Corp | シリカ質パターンの形成方法 |
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| JP4053105B2 (ja) * | 1996-12-30 | 2008-02-27 | Azエレクトロニックマテリアルズ株式会社 | シリカ質セラミックス被膜の形成方法及び同方法で形成されたセラミックス被膜 |
| JP2000012536A (ja) * | 1998-06-24 | 2000-01-14 | Tokyo Ohka Kogyo Co Ltd | シリカ被膜形成方法 |
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| JP5291275B2 (ja) * | 2000-07-27 | 2013-09-18 | 有限会社コンタミネーション・コントロール・サービス | コーティング膜が施された部材及びコーティング膜の製造方法 |
| JP4722269B2 (ja) * | 2000-08-29 | 2011-07-13 | Azエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法 |
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| JP2003100865A (ja) * | 2001-09-21 | 2003-04-04 | Catalysts & Chem Ind Co Ltd | 半導体基板の製造方法および半導体基板 |
| JP4128394B2 (ja) * | 2002-05-16 | 2008-07-30 | クラリアント インターナショナル リミテッド | ポリシラザン含有コーティング膜の親水性促進剤及び親水性維持剤 |
| EP1388818B1 (en) * | 2002-08-10 | 2011-06-22 | Samsung Electronics Co., Ltd. | Method and apparatus for rendering image signal |
| JP2004155834A (ja) * | 2002-11-01 | 2004-06-03 | Clariant Internatl Ltd | ポリシラザン含有コーティング液 |
-
2005
- 2005-02-02 JP JP2005026818A patent/JP4578993B2/ja not_active Expired - Lifetime
-
2006
- 2006-01-27 TW TW95103289A patent/TWI466929B/zh not_active IP Right Cessation
- 2006-02-01 WO PCT/JP2006/301662 patent/WO2006082848A1/ja not_active Ceased
- 2006-02-01 KR KR1020077020028A patent/KR101152694B1/ko not_active Expired - Lifetime
- 2006-02-01 US US11/795,100 patent/US20080102211A1/en not_active Abandoned
- 2006-02-01 CN CN2006800035343A patent/CN101111575B/zh not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2243842A (en) | 1990-04-12 | 1991-11-13 | Electrolube Limited | Circuit board cleaning |
| JPH08124825A (ja) * | 1994-10-20 | 1996-05-17 | Tokyo Ohka Kogyo Co Ltd | 半導体ウェーハの処理方法 |
| JPH11233510A (ja) | 1998-02-16 | 1999-08-27 | Tonen Corp | 裾引き形状を有するSiO2系被膜の形成方法 |
| JP2003197611A (ja) | 2001-12-27 | 2003-07-11 | Clariant (Japan) Kk | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006082848A1 (ja) | 2006-08-10 |
| US20080102211A1 (en) | 2008-05-01 |
| TW200632006A (en) | 2006-09-16 |
| JP4578993B2 (ja) | 2010-11-10 |
| JP2006216704A (ja) | 2006-08-17 |
| KR20070108214A (ko) | 2007-11-08 |
| TWI466929B (zh) | 2015-01-01 |
| CN101111575B (zh) | 2010-06-23 |
| CN101111575A (zh) | 2008-01-23 |
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