CN100578663C - 铁电存储器及其数据读取方法 - Google Patents
铁电存储器及其数据读取方法 Download PDFInfo
- Publication number
- CN100578663C CN100578663C CN03820075A CN03820075A CN100578663C CN 100578663 C CN100578663 C CN 100578663C CN 03820075 A CN03820075 A CN 03820075A CN 03820075 A CN03820075 A CN 03820075A CN 100578663 C CN100578663 C CN 100578663C
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- CN
- China
- Prior art keywords
- node
- voltage
- pmos
- bit line
- electromotive force
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Abstract
Description
Claims (9)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/004559 WO2004093088A1 (ja) | 2003-04-10 | 2003-04-10 | 強誘電体メモリおよびそのデータ読み出し方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1679115A CN1679115A (zh) | 2005-10-05 |
CN100578663C true CN100578663C (zh) | 2010-01-06 |
Family
ID=33193192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03820075A Expired - Fee Related CN100578663C (zh) | 2003-04-10 | 2003-04-10 | 铁电存储器及其数据读取方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7012829B2 (zh) |
EP (1) | EP1622162B1 (zh) |
JP (1) | JP4185969B2 (zh) |
CN (1) | CN100578663C (zh) |
AU (1) | AU2003227479A1 (zh) |
DE (1) | DE60330191D1 (zh) |
WO (1) | WO2004093088A1 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1598829B1 (en) * | 2003-02-27 | 2009-07-01 | Fujitsu Microelectronics Limited | Semiconductor memory |
JP4177220B2 (ja) * | 2003-10-02 | 2008-11-05 | 三洋電機株式会社 | 半導体記憶装置 |
KR20080051076A (ko) * | 2006-12-04 | 2008-06-10 | 세이코 엡슨 가부시키가이샤 | 강유전체 기억 장치 및 전자 기기 |
JP2009059398A (ja) * | 2007-08-30 | 2009-03-19 | Toshiba Corp | 強誘電体半導体記憶装置 |
WO2009034603A1 (ja) * | 2007-09-14 | 2009-03-19 | Fujitsu Microelectronics Limited | 半導体メモリ |
CN101266832B (zh) * | 2008-03-31 | 2010-06-02 | 清华大学 | 一种铁电存储器数据读出加速装置及方法 |
JP2009301658A (ja) | 2008-06-13 | 2009-12-24 | Seiko Epson Corp | 強誘電体記憶装置、強誘電体記憶装置の駆動方法および電子機器 |
JP5190326B2 (ja) * | 2008-11-04 | 2013-04-24 | 株式会社東芝 | 強誘電体メモリ装置 |
CN101777377B (zh) * | 2010-01-12 | 2013-01-30 | 清华大学 | 一种位线-板线合并结构的铁电存储器存储阵列 |
US8310856B2 (en) * | 2010-06-09 | 2012-11-13 | Radiant Technology | Ferroelectric memories based on arrays of autonomous memory bits |
JP5500051B2 (ja) | 2010-11-22 | 2014-05-21 | 富士通セミコンダクター株式会社 | 強誘電体メモリ |
US8797783B1 (en) | 2013-01-30 | 2014-08-05 | Texas Instruments Incorporated | Four capacitor nonvolatile bit cell |
CN104821179B (zh) * | 2015-04-16 | 2017-09-26 | 江苏时代全芯存储科技有限公司 | 记忆体驱动电路 |
US9934837B2 (en) * | 2016-03-01 | 2018-04-03 | Micron Technology, Inc. | Ground reference scheme for a memory cell |
US9552864B1 (en) * | 2016-03-11 | 2017-01-24 | Micron Technology, Inc. | Offset compensation for ferroelectric memory cell sensing |
US9792973B2 (en) * | 2016-03-18 | 2017-10-17 | Micron Technology, Inc. | Ferroelectric memory cell sensing |
US10192606B2 (en) * | 2016-04-05 | 2019-01-29 | Micron Technology, Inc. | Charge extraction from ferroelectric memory cell using sense capacitors |
CN109643570B (zh) | 2016-08-31 | 2023-11-21 | 美光科技公司 | 包括铁电存储器且用于操作铁电存储器的装置及方法 |
WO2018044485A1 (en) | 2016-08-31 | 2018-03-08 | Micron Technology, Inc. | Ferroelectric memory cells |
US9786345B1 (en) | 2016-09-16 | 2017-10-10 | Micron Technology, Inc. | Compensation for threshold voltage variation of memory cell components |
US9858979B1 (en) * | 2016-10-05 | 2018-01-02 | Micron Technology, Inc. | Reprogrammable non-volatile ferroelectric latch for use with a memory controller |
US10867675B2 (en) * | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
US10726917B1 (en) * | 2019-01-23 | 2020-07-28 | Micron Technology, Inc. | Techniques for read operations |
CN117037871B (zh) * | 2023-10-09 | 2024-02-27 | 之江实验室 | 存内计算结果的读出电路、读出方法及存储器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4031904B2 (ja) * | 2000-10-31 | 2008-01-09 | 富士通株式会社 | データ読み出し回路とデータ読み出し方法及びデータ記憶装置 |
JP2002269969A (ja) * | 2001-03-07 | 2002-09-20 | Nec Corp | メモリセル、不揮発性メモリ装置、及びその制御方法 |
JP3688232B2 (ja) * | 2001-09-04 | 2005-08-24 | 松下電器産業株式会社 | 強誘電体記憶装置 |
EP1349030A1 (en) * | 2001-12-20 | 2003-10-01 | Matsushita Electric Industrial Co., Ltd. | Potential generating circuit, potential generating apparatus, semiconductor device using the same, and driving method thereof |
JP3957520B2 (ja) * | 2002-02-07 | 2007-08-15 | 富士通株式会社 | 電圧生成回路 |
-
2003
- 2003-04-10 JP JP2004570843A patent/JP4185969B2/ja not_active Expired - Fee Related
- 2003-04-10 AU AU2003227479A patent/AU2003227479A1/en not_active Abandoned
- 2003-04-10 WO PCT/JP2003/004559 patent/WO2004093088A1/ja active Application Filing
- 2003-04-10 EP EP03717555A patent/EP1622162B1/en not_active Expired - Fee Related
- 2003-04-10 CN CN03820075A patent/CN100578663C/zh not_active Expired - Fee Related
- 2003-04-10 DE DE60330191T patent/DE60330191D1/de not_active Expired - Lifetime
-
2005
- 2005-02-07 US US11/050,781 patent/US7012829B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU2003227479A1 (en) | 2004-11-04 |
EP1622162B1 (en) | 2009-11-18 |
US20050128784A1 (en) | 2005-06-16 |
JP4185969B2 (ja) | 2008-11-26 |
EP1622162A4 (en) | 2006-08-16 |
DE60330191D1 (de) | 2009-12-31 |
US7012829B2 (en) | 2006-03-14 |
WO2004093088A1 (ja) | 2004-10-28 |
CN1679115A (zh) | 2005-10-05 |
EP1622162A1 (en) | 2006-02-01 |
JPWO2004093088A1 (ja) | 2006-07-06 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa County, Japan Applicant before: Fujitsu Ltd. |
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C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100106 Termination date: 20200410 |
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CF01 | Termination of patent right due to non-payment of annual fee |