CN100536133C - 具有集中地配置了缓冲器或保护电路的布局的半导体集成电路 - Google Patents

具有集中地配置了缓冲器或保护电路的布局的半导体集成电路 Download PDF

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Publication number
CN100536133C
CN100536133C CNB2006100024302A CN200610002430A CN100536133C CN 100536133 C CN100536133 C CN 100536133C CN B2006100024302 A CNB2006100024302 A CN B2006100024302A CN 200610002430 A CN200610002430 A CN 200610002430A CN 100536133 C CN100536133 C CN 100536133C
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CN
China
Prior art keywords
metal
semiconductor integrated
integrated circuit
wiring
mentioned
Prior art date
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Expired - Fee Related
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CNB2006100024302A
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English (en)
Chinese (zh)
Other versions
CN1819196A (zh
Inventor
中村正
榊原清彦
滝川浩
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NEC Electronics Corp
Renesas Electronics Corp
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Renesas Technology Corp
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Publication of CN1819196A publication Critical patent/CN1819196A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/998—Input and output buffer/driver structures

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Microcomputers (AREA)
CNB2006100024302A 2005-01-27 2006-01-27 具有集中地配置了缓冲器或保护电路的布局的半导体集成电路 Expired - Fee Related CN100536133C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005020111A JP4693428B2 (ja) 2005-01-27 2005-01-27 半導体集積回路
JP2005020111 2005-01-27

Publications (2)

Publication Number Publication Date
CN1819196A CN1819196A (zh) 2006-08-16
CN100536133C true CN100536133C (zh) 2009-09-02

Family

ID=36695849

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100024302A Expired - Fee Related CN100536133C (zh) 2005-01-27 2006-01-27 具有集中地配置了缓冲器或保护电路的布局的半导体集成电路

Country Status (5)

Country Link
US (2) US7358548B2 (enExample)
JP (1) JP4693428B2 (enExample)
KR (1) KR20060086880A (enExample)
CN (1) CN100536133C (enExample)
TW (1) TW200644161A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4693428B2 (ja) * 2005-01-27 2011-06-01 ルネサスエレクトロニクス株式会社 半導体集積回路
TWI381385B (zh) * 2007-05-04 2013-01-01 Macronix Int Co Ltd 具有嵌入式多類型記憶體的記憶體結構
KR100798896B1 (ko) * 2007-06-07 2008-01-29 주식회사 실리콘웍스 반도체 칩의 패드 배치 구조
US8138787B2 (en) * 2008-07-13 2012-03-20 Altera Corporation Apparatus and method for input/output module that optimizes frequency performance in a circuit
JP5419431B2 (ja) * 2008-11-28 2014-02-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5503208B2 (ja) 2009-07-24 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置
JP2017135308A (ja) * 2016-01-29 2017-08-03 セイコーエプソン株式会社 半導体集積回路装置及びそのレイアウト設計方法、並びに、電子機器
WO2021143050A1 (zh) * 2020-01-14 2021-07-22 长鑫存储技术有限公司 集成电路结构和存储器
US11367478B2 (en) 2020-01-14 2022-06-21 Changxin Memory Technologies, Inc. Integrated circuit structure and memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454591A (en) * 1980-05-29 1984-06-12 Texas Instruments Incorporated Interface system for bus line control
US5300796A (en) * 1988-06-29 1994-04-05 Hitachi, Ltd. Semiconductor device having an internal cell array region and a peripheral region surrounding the internal cell array for providing input/output basic cells
US6222213B1 (en) * 1998-06-29 2001-04-24 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125130A (ja) 1994-10-26 1996-05-17 Matsushita Electric Ind Co Ltd 半導体集積回路
JPH09232437A (ja) * 1996-02-27 1997-09-05 Hitachi Ltd 半導体集積回路装置およびそれを用いたコンピュータシステム
JP3374967B2 (ja) * 1998-10-26 2003-02-10 日本電気株式会社 半導体集積回路
JP2002050742A (ja) * 2000-07-31 2002-02-15 Nec Corp 半導体装置およびその製造方法
JP4904619B2 (ja) * 2000-11-29 2012-03-28 富士通セミコンダクター株式会社 半導体装置
US6502231B1 (en) * 2001-05-31 2002-12-31 Applied Micro Circuits Corporation Integrated circuit template cell system and method
JP2003158195A (ja) * 2001-11-20 2003-05-30 Hitachi Ltd 半導体集積回路装置の製造方法
DE10220923B4 (de) * 2002-05-10 2006-10-26 Infineon Technologies Ag Verfahren zur Herstellung eines nicht-flüchtigen Flash-Halbleiterspeichers
US6735108B2 (en) * 2002-07-08 2004-05-11 Micron Technology, Inc. ROM embedded DRAM with anti-fuse programming
US7003750B2 (en) * 2002-08-01 2006-02-21 Sun Microsystems, Inc. Topology based wire shielding generation
JP4190865B2 (ja) * 2002-11-11 2008-12-03 Ｎｅｃエレクトロニクス株式会社 半導体メモリ
JP4624660B2 (ja) * 2003-10-09 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置
US7006370B1 (en) * 2003-11-18 2006-02-28 Lsi Logic Corporation Memory cell architecture
JP4693428B2 (ja) * 2005-01-27 2011-06-01 ルネサスエレクトロニクス株式会社 半導体集積回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454591A (en) * 1980-05-29 1984-06-12 Texas Instruments Incorporated Interface system for bus line control
US5300796A (en) * 1988-06-29 1994-04-05 Hitachi, Ltd. Semiconductor device having an internal cell array region and a peripheral region surrounding the internal cell array for providing input/output basic cells
US6222213B1 (en) * 1998-06-29 2001-04-24 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JP4693428B2 (ja) 2011-06-01
US7358548B2 (en) 2008-04-15
CN1819196A (zh) 2006-08-16
KR20060086880A (ko) 2006-08-01
TW200644161A (en) 2006-12-16
JP2006210607A (ja) 2006-08-10
US20080149966A1 (en) 2008-06-26
US20060163615A1 (en) 2006-07-27

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Effective date: 20100917

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CP01 Change in the name or title of a patent holder

Address after: Kanagawa, Japan

Patentee after: Renesas Electronics Corp.

Address before: Kanagawa, Japan

Patentee before: NEC ELECTRONICS Corp.

TR01 Transfer of patent right

Effective date of registration: 20100917

Address after: Kanagawa, Japan

Patentee after: NEC ELECTRONICS Corp.

Address before: Tokyo, Japan

Patentee before: Renesas Technology Corp.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090902

Termination date: 20140127