CN1819196A - 具有集中地配置了缓冲器或保护电路的布局的半导体集成电路 - Google Patents
具有集中地配置了缓冲器或保护电路的布局的半导体集成电路 Download PDFInfo
- Publication number
- CN1819196A CN1819196A CNA2006100024302A CN200610002430A CN1819196A CN 1819196 A CN1819196 A CN 1819196A CN A2006100024302 A CNA2006100024302 A CN A2006100024302A CN 200610002430 A CN200610002430 A CN 200610002430A CN 1819196 A CN1819196 A CN 1819196A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- semiconductor integrated
- integrated circuit
- wiring
- metal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 239000000872 buffer Substances 0.000 title claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims description 88
- 239000002184 metal Substances 0.000 claims description 88
- 230000001681 protective effect Effects 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11898—Input and output buffer/driver structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Microcomputers (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005020111 | 2005-01-27 | ||
JP2005020111A JP4693428B2 (ja) | 2005-01-27 | 2005-01-27 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1819196A true CN1819196A (zh) | 2006-08-16 |
CN100536133C CN100536133C (zh) | 2009-09-02 |
Family
ID=36695849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100024302A Expired - Fee Related CN100536133C (zh) | 2005-01-27 | 2006-01-27 | 具有集中地配置了缓冲器或保护电路的布局的半导体集成电路 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7358548B2 (zh) |
JP (1) | JP4693428B2 (zh) |
KR (1) | KR20060086880A (zh) |
CN (1) | CN100536133C (zh) |
TW (1) | TW200644161A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101325086B (zh) * | 2007-05-04 | 2012-01-11 | 旺宏电子股份有限公司 | 具有嵌入式多类型存储器的存储器 |
CN102089974B (zh) * | 2008-07-13 | 2015-08-12 | 阿尔特拉公司 | 用于优化电路中的频率性能的输入/输出模块的装置和方法 |
WO2021143050A1 (zh) * | 2020-01-14 | 2021-07-22 | 长鑫存储技术有限公司 | 集成电路结构和存储器 |
US11367478B2 (en) | 2020-01-14 | 2022-06-21 | Changxin Memory Technologies, Inc. | Integrated circuit structure and memory |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4693428B2 (ja) * | 2005-01-27 | 2011-06-01 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
KR100798896B1 (ko) * | 2007-06-07 | 2008-01-29 | 주식회사 실리콘웍스 | 반도체 칩의 패드 배치 구조 |
JP5419431B2 (ja) | 2008-11-28 | 2014-02-19 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP5503208B2 (ja) * | 2009-07-24 | 2014-05-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2017135308A (ja) * | 2016-01-29 | 2017-08-03 | セイコーエプソン株式会社 | 半導体集積回路装置及びそのレイアウト設計方法、並びに、電子機器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4454591A (en) * | 1980-05-29 | 1984-06-12 | Texas Instruments Incorporated | Interface system for bus line control |
US5300796A (en) * | 1988-06-29 | 1994-04-05 | Hitachi, Ltd. | Semiconductor device having an internal cell array region and a peripheral region surrounding the internal cell array for providing input/output basic cells |
JPH08125130A (ja) | 1994-10-26 | 1996-05-17 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
JPH09232437A (ja) * | 1996-02-27 | 1997-09-05 | Hitachi Ltd | 半導体集積回路装置およびそれを用いたコンピュータシステム |
JP3380465B2 (ja) * | 1998-06-29 | 2003-02-24 | 松下電器産業株式会社 | 半導体装置 |
JP3374967B2 (ja) * | 1998-10-26 | 2003-02-10 | 日本電気株式会社 | 半導体集積回路 |
JP2002050742A (ja) * | 2000-07-31 | 2002-02-15 | Nec Corp | 半導体装置およびその製造方法 |
JP4904619B2 (ja) * | 2000-11-29 | 2012-03-28 | 富士通セミコンダクター株式会社 | 半導体装置 |
US6502231B1 (en) * | 2001-05-31 | 2002-12-31 | Applied Micro Circuits Corporation | Integrated circuit template cell system and method |
JP2003158195A (ja) * | 2001-11-20 | 2003-05-30 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
DE10220923B4 (de) * | 2002-05-10 | 2006-10-26 | Infineon Technologies Ag | Verfahren zur Herstellung eines nicht-flüchtigen Flash-Halbleiterspeichers |
US6735108B2 (en) * | 2002-07-08 | 2004-05-11 | Micron Technology, Inc. | ROM embedded DRAM with anti-fuse programming |
US7003750B2 (en) * | 2002-08-01 | 2006-02-21 | Sun Microsystems, Inc. | Topology based wire shielding generation |
JP4190865B2 (ja) * | 2002-11-11 | 2008-12-03 | Necエレクトロニクス株式会社 | 半導体メモリ |
JP4624660B2 (ja) * | 2003-10-09 | 2011-02-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7006370B1 (en) * | 2003-11-18 | 2006-02-28 | Lsi Logic Corporation | Memory cell architecture |
JP4693428B2 (ja) * | 2005-01-27 | 2011-06-01 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
-
2005
- 2005-01-27 JP JP2005020111A patent/JP4693428B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-10 TW TW095100837A patent/TW200644161A/zh unknown
- 2006-01-10 US US11/328,194 patent/US7358548B2/en not_active Expired - Fee Related
- 2006-01-26 KR KR1020060008212A patent/KR20060086880A/ko not_active Application Discontinuation
- 2006-01-27 CN CNB2006100024302A patent/CN100536133C/zh not_active Expired - Fee Related
-
2008
- 2008-02-25 US US12/071,624 patent/US20080149966A1/en not_active Abandoned
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101325086B (zh) * | 2007-05-04 | 2012-01-11 | 旺宏电子股份有限公司 | 具有嵌入式多类型存储器的存储器 |
CN102089974B (zh) * | 2008-07-13 | 2015-08-12 | 阿尔特拉公司 | 用于优化电路中的频率性能的输入/输出模块的装置和方法 |
WO2021143050A1 (zh) * | 2020-01-14 | 2021-07-22 | 长鑫存储技术有限公司 | 集成电路结构和存储器 |
US11367478B2 (en) | 2020-01-14 | 2022-06-21 | Changxin Memory Technologies, Inc. | Integrated circuit structure and memory |
Also Published As
Publication number | Publication date |
---|---|
JP2006210607A (ja) | 2006-08-10 |
TW200644161A (en) | 2006-12-16 |
JP4693428B2 (ja) | 2011-06-01 |
KR20060086880A (ko) | 2006-08-01 |
US7358548B2 (en) | 2008-04-15 |
US20060163615A1 (en) | 2006-07-27 |
US20080149966A1 (en) | 2008-06-26 |
CN100536133C (zh) | 2009-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1819196A (zh) | 具有集中地配置了缓冲器或保护电路的布局的半导体集成电路 | |
CN2750477Y (zh) | 埋入式电容器介层窗的结构 | |
US7202548B2 (en) | Embedded capacitor with interdigitated structure | |
US10141258B2 (en) | Semiconductor devices having staggered air gaps | |
US9806080B2 (en) | Semiconductor devices and methods of manufacturing the same | |
US7598592B2 (en) | Capacitor structure for integrated circuit | |
US9171862B2 (en) | Three-dimensional memory and method of forming the same | |
CN101038918A (zh) | 半导体集成电路设备及虚拟图案排列方法 | |
CN1828904A (zh) | 具有双存储节点的半导体存储装置及其制备和操作方法 | |
CN1271703C (zh) | 在同一层次处制造金属绝缘体金属电容器和电阻器的方法 | |
US20210242175A1 (en) | Semiconductor memory device | |
US8445379B2 (en) | Method of manufacturing semiconductor device | |
US7659629B2 (en) | Semiconductor integrated circuit | |
CN1165083C (zh) | 用于dram存储器的带有垂直晶体管的写入放大器/读出放大器 | |
CN1897222A (zh) | 用于制造用于半导体器件的电容器的方法 | |
US10872812B2 (en) | High-density metal-insulator-metal (MiM) capacitors | |
US20230187396A1 (en) | Semiconductor memory device | |
CN1841732A (zh) | 具有多接头式电容器的集成电路 | |
CN1479375A (zh) | 电容器 | |
US7615843B2 (en) | Guard ring device receiving different voltages for forming decoupling capacitor and semiconductor device having the same | |
US6603164B2 (en) | Integrated semiconductor memory configuration | |
CN1463041A (zh) | 半导体集成电路装置 | |
CN1367531A (zh) | 一种层间介电层平坦化的方法 | |
CN1284208C (zh) | 半导体器件及其制造方法 | |
CN118053858A (zh) | 半导体结构及其形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC CORP. Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20100917 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS Free format text: FORMER NAME: NEC CORP. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO, JAPAN TO: KANAGAWA, JAPAN |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corp. Address before: Kanagawa, Japan Patentee before: NEC ELECTRONICS Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100917 Address after: Kanagawa, Japan Patentee after: NEC ELECTRONICS Corp. Address before: Tokyo, Japan Patentee before: Renesas Technology Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090902 Termination date: 20140127 |