CN100474550C - 基板的粘附方法 - Google Patents
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Abstract
本发明的课题在于提供:在对半导体晶片等基板薄板化时,难以产生基板的裂纹或缺口的基板粘附方法。解决课题的方法为:在半导体晶片W的电路(元件)形成面涂敷粘合剂液,预干燥该粘合剂液以降低流动性,可以维持粘合剂层1的形状。使用烤箱预干燥例如在80℃下加热5分钟。粘合剂层1的厚度由在半导体晶片W的表面形成的电路的凹凸来决定。然后,在形成规定厚度的粘合剂层1的半导体晶片W上粘附支承板2。
Description
技术领域
本发明涉及在研削半导体晶片等基板使其薄板化时,在支承板上粘附该基板的方法。
背景技术
IC卡或移动电话正要求薄型化、小型化、轻量化,为满足该要求,即使对于被插入的半导体芯片,也必须是薄的半导体芯片。因而虽然现在形成半导体芯片的晶片厚度为125μm~150μm,但是下一代的芯片用半导体晶片的厚度必须在25μm~50μm。
半导体晶片的薄板化历来通过图6所示的工序进行。即,在半导体晶片的电路(元件)形成面(A面)粘附保护胶带,将其反转再通过研磨机研削半导体晶片的背面,使其薄板化,将该薄板化的半导体晶片的背面固定在保存在切割框架内的切割带上,在这种状态下,剥离覆盖半导体晶片的电路(元件)形成面(A面)的保护胶带、然后通过切割装置分别切分各个芯片。
上述方法在专利文献1中被公开。而且,专利文献1中所谓的保护胶带就是在耐热性保护胶带的一端粘附强粘附性并能够撕下的胶带。
另外,在专利文献2中公开了使用在氮化铝—氮化硼气孔烧结体上浸渍梯形硅酮低聚物的保护基板代替保护胶带,并使用热塑性薄膜粘附该保护基板和半导体晶片。
另外,在专利文献3中提出了这样的方法:使用具有与半导体晶片基本相同的热膨胀系数的氧化铝、氮化铝、氮化硼、碳化硅等材料作为保护基板,另外使用聚酰亚胺等热塑性树脂作为粘接保护基板和半导体晶片的粘合剂;作为该粘合剂的适用法有:形成10~100μm厚度的薄膜的方法或旋涂粘合剂树脂溶液、干燥成为20μm以下的薄膜的方法。
[专利文献1]特开2002—270676号公报 段落(0035)
[专利文献2]特开2002—203821号公报 段落(0018)
[专利文献3]特开2001—77304号公报 段落(0010)、(0017)
发明内容
如专利文献1中所公开,如果使用保护胶带,在剥离时半导体晶片上易于产生裂纹或缺口。另外,由于只使用保护胶带,不能支撑薄膜化的半导体晶片,因此必须手工进行搬运,不能够自动化。
如专利文献2或专利文献3所公开的,如果使用氧化铝、氮化铝、氮化硼、碳化硅等代替保护胶带作为保护基板(支承板),那么可以实现操作或搬送的自动化。然而,要使用一旦干燥才能将保护基板和半导体晶片粘附在一起的热塑性薄膜作为粘附工具。因此,必需进行软化热塑性薄膜的加热工序,而且,如果使用薄膜状的粘合材料则具有粘结强度产生部分的偏差,有在研削时剥离掉了、相反,在切割时却有难以剥离的部位等缺点。
用于解决上述问题的本发明的基板的粘附方法是这样实现的:在基板的电路形成面涂敷粘合剂液后,预干燥该粘合剂液以维持作为粘合剂层的形状,接着,在上述粘合剂层中压入支承板,并一体化,在压入同时或压入结束后,干燥上述粘合剂层。
一旦通过预干燥,可以容易地控制粘合剂层的膜厚。另外,为了得到需要的厚度,也可以重复进行多次粘合剂液的涂敷和预干燥。
由于在研削时使用水,因此作为粘合剂优选非水溶性的高分子化合物,另外,由于存在DAF(模头接触薄膜)的粘附等高温处理工序,所以期望粘合剂的软化点较高。如果考虑上述因素,可以列举将如下物质溶于溶剂形成的物质:将酚醛清漆树脂、环氧树脂、酰胺树脂、硅酮树脂、丙烯酸树脂、尿烷树脂、聚苯乙烯、聚乙烯基醚、聚醋酸乙烯酯及其改性物或这些物质的混合物。其中由于丙烯酸树脂具有200℃以上的耐热性,产生的气体也少,难以发生裂纹而优选。另外,酚醛清漆树脂虽也没有泡沫、但在耐热性、产生气体的量和裂纹的产生方面比丙烯酸树脂材料差,不过由于其软化点高、在粘附后的剥离时容易溶剂剥离,因此也优选。在此基础上,也可以在这些树脂中加入防止成膜时的裂纹的可塑剂。
另外,如果是上述粘合剂,则上述预干燥工序的温度可以选取为200℃以下(40~200℃),上述干燥工序的温度可以选取为300℃以下(40~300℃)。
另外,溶剂要求是能够溶解上述物质、并且能够均匀地、薄片地成膜的物质,例如可以列举丙酮、甲乙酮、环己烷、甲基异戊基酮、2—庚酮等酮类;乙二醇、丙二醇、二甘醇、乙二醇单乙酸酯、丙二醇单乙酸酯、二甘醇单乙酸酯或这些化合物的单甲基醚,单乙基醚、单丙基醚、单丁基醚或单苯基醚等多元醇类及其衍生物;如二氧杂环已烷这样的环式醚类;和乳酸乙酯、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等的酯类,苯、甲苯、二甲苯等的芳香族烃类。这些既可以单独使用,又可以混合两种以上使用。特别地,优选乙二醇、丙二醇、二甘醇、乙二醇单乙酸酯、丙二醇单乙酸酯、二甘醇单乙酸酯或这些化合物的单甲基醚,单乙基醚、单丙基醚、单丁基醚或单苯基醚等的多元醇类及其衍生物。另外,也可以在这些溶剂中添加提高膜厚均一性的活性剂。
另外,作为除掉粘合剂的剥离液,除了上述溶剂以外,可以使用甲醇、乙醇、丙醇、异丙醇、丁醇等一元醇类,γ—丁内酯等环状内酯类,二乙醚或苯甲醚等醚类,二甲基甲醛、二甲基乙醛等。特别优选可以比较安全地进行处理的甲醇。
另外,使用的支承板,优选在厚度方向具有多个贯通孔的。由于使用这样构造的支承板,部分粘合剂掺入贯通孔中而使得粘合变得坚固,同时,剥离时可以由该贯通孔提供醇。
另外,如果在半导体晶片等的基板的电路形成面上用旋转涂布器涂敷粘合剂液,那么在圆周部分可能形成更加高的突缘部分。在这种情况下,优选在预干燥粘合剂液前,用溶剂除去突缘部分。
根据本发明,在使半导体晶片等的基板薄板化时,由于使用具有刚性的支承板而不是带材进行支撑,可以实现操作或搬送的自动化。而且,在粘附基板和支承板时,由于在基板表面涂敷粘合剂液后进行预备干燥,可以控制粘合剂层的厚度,另外,粘附强度在面内也是均一的。
附图简述
[图1]是具有部分本发明的半导体晶片粘附方法的半导体晶片薄板化工序说明图。
[图2]是预干燥后半导体晶片的边缘部的粘合剂隆起的说0明图。
[图3]是支承板的剖面图。
[图4]是粘附机的简图。
[图5]是从支承板的上方供应醇的状态的示意图。
[图6]是历来的半导体晶片薄板化工序的说明图。
符号说明
1...粘合剂层、2...支承板、3...贯通孔、4...扁平部位、5...粘附机、10...研磨机、11...切割带、12...框架、13...切割装置、51...底板、52...顶板、53...发动机、54...烧结板、55...排气管、W...半导体晶片。
具体实施方式
以下,根据附图来说明本发明的实施方式。图1是使用本发明的半导体晶片的粘附方法组合的半导体晶片的薄板化工序的说明图。
在本发明中,首先在半导体晶片W的电路(元件)形成面涂敷粘合剂液。例如使用旋转涂布器来涂敷。粘合剂液选取丙烯酸类树脂或酚醛类的苯酚树脂类材料。
接着,预干燥上述粘合剂液以减少流动性,可以维持粘合剂层1的形状。使用烤箱预干燥,例如在80℃下加热5分钟。粘合剂层1的厚度由在半导体晶片W的表面形成的电路的凹凸来决定。另外,一次涂敷没有呈现所需厚度时,重复进行多次涂敷和预干燥。这时,最上层以外的粘合剂层的预干燥要加强到粘合剂没有流动性的干燥程度,即预干燥要进行到干燥挤压时不会从上述贯通孔渗出粘合剂为止。
另外,在使用旋转涂布器涂敷粘合剂液时,如图2所示即使预干燥后,半导体晶片W的边缘也会产生隆起。可以通过后工序的按压将该隆起压碎,也可以用处理液除去隆起的部分。
在形成如上所定厚度的粘合剂层1的半导体晶片W上粘附支承板2。支承板2是这样形成的:如图3所示,使用了直径比半导体晶片W稍大、厚度为0.5mm的铁—镍合金(镍36%的36殷钢),形成0.7mm间距的Φ0.5mm的贯通孔3,而且,周围部位是没有贯通孔的扁平部分4。
在半导体晶片W的粘合剂层1的上方叠放上述支承板2,使用图4所示的粘附机5进行粘附。
粘附机5的构造是这样的:在底板51的上方设置顶板52,通过驱动发动机53升降移动该顶板52,另外在顶板52的下面安装陶瓷的烧结板54,该烧结板54连接排气管55。
使用该粘附机5粘附时,在底板51的上方,设置成下方为半导体晶片W、上方为支承板2,驱动发动机53降低顶板52,将烧结板54挤压到支承板2上。这时,同时进行加热(200℃以下),通过烧结板54和排气管55除去粘合剂层1中的溶剂。
然后,从粘附机5中取下成为一体的半导体晶片W和支承板2,用研磨机10研削半导体晶片W的背面(B面),使半导体晶片W薄板化。而且,为了抑制由于研削而在研磨机10和半导体晶片W之间生成的摩擦热,一边向半导体晶片W的背面提供水一边进行研削。这里,上述粘合剂由于选定与水不相溶的物质(可溶于醇),因此研削时支承板2不会从半导体晶片W上剥落。
根据需要在该薄板化的半导体将片W的背面(B面)形成电路等以后,将该背面固定在切割带11上。该切割带11具有粘附性,并且固定在框架12中。
然后,如图5所示,从支承板2的上方注入醇(特别是低分子量的醇),溶解并除去粘合剂层1。这时,通过未图示的旋转器转动框架12,可以在短时间内,使醇遍及粘合剂层1的表面。
接着,取下支承板2以后,通过切割装置13将半导体晶片切割成芯片大小。切割后,用紫外线照射切割带11,降低切割带11的粘附力后,取出切割的芯片。
Claims (8)
1、一种基板的粘附方法,该方法是在通过研削使基板薄板化的工序之前,将上述基板的电路形成面粘附在具有刚性且在厚度方向带有多个贯通孔的支承板上的方法,其特征在于:
在基板的电路形成面涂敷粘合剂液后,将该粘合剂液预干燥到挤压时不会从上述贯通孔渗出粘合剂为止,以维持粘合剂层的形状;
接着,将所述具有刚性且在厚度方向带有多个贯通孔的支承板挤压到上述粘合剂层上使其一体化,在该挤压的同时或挤压结束后,干燥上述粘合剂层;
然后,从支承板的贯通孔供给溶剂,将支承板从基板移除。
2、如权利要求1所述的基板的粘附方法,其特征在于:使用酚醛清漆树脂类材料作为上述粘合剂液。
3、如权利要求1所述的基板的粘附方法,其特征在于:为了使上述粘合剂层变厚,重复进行多次粘合剂液的涂敷和预干燥。
4、如权利要求1所述的基板的粘附方法,其特征在于:上述预干燥工序的温度在200℃以下,上述干燥工序的温度在300℃以下。
5、如权利要求1所述的基板的粘附方法,其特征在于:上述粘合剂液可溶于醇或酮中。
6、如权利要求1所述的基板的粘附方法,其特征在于:在上述基板的电路形成面涂敷粘合剂液后,在预干燥该粘合剂液前,用溶剂除去基板周围所形成的粘合剂液的突缘部分。
7、如权利要求1所述的基板的粘附方法,其特征在于:使用丙烯酸类树脂材料作为上述粘合剂液。
8、如权利要求1~7中任一项所述的基板的粘附方法,其中所述基板为半导体晶片。
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TWI540644B (zh) * | 2011-07-01 | 2016-07-01 | 漢高智慧財產控股公司 | 斥性材料於半導體總成中保護製造區域之用途 |
JP2013157510A (ja) * | 2012-01-31 | 2013-08-15 | Disco Abrasive Syst Ltd | 貼着装置 |
US20150179494A1 (en) * | 2012-06-29 | 2015-06-25 | Hitachi Chemical Company, Ltd. | Method for producing semiconductor device |
NL2009147C2 (nl) * | 2012-07-06 | 2014-01-07 | Fico Bv | Inrichting en werkwijze voor het separeren, ten minste gedeeltelijk drogen en inspecteren van elektronische componenten. |
JP6374680B2 (ja) * | 2013-12-13 | 2018-08-15 | 東京応化工業株式会社 | 貼付方法 |
WO2015098609A1 (ja) | 2013-12-25 | 2015-07-02 | 日本碍子株式会社 | ハンドル基板、半導体用複合基板、半導体回路基板およびその製造方法 |
JP6550741B2 (ja) | 2014-12-17 | 2019-07-31 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6500481B2 (ja) | 2015-02-17 | 2019-04-17 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6606033B2 (ja) * | 2016-08-12 | 2019-11-13 | 富士フイルム株式会社 | 積層体および積層体の製造方法 |
TWI745494B (zh) * | 2016-11-28 | 2021-11-11 | 日商三井金屬鑛業股份有限公司 | 多層配線板之製造方法 |
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JPH05131358A (ja) * | 1991-07-03 | 1993-05-28 | Nikko Kyodo Co Ltd | 研磨加工法 |
JP2741362B2 (ja) * | 1995-12-05 | 1998-04-15 | 日化精工株式会社 | ウエハ−の仮着用接着剤 |
JPH1161079A (ja) * | 1997-08-21 | 1999-03-05 | The Inctec Inc | 精密加工用仮着接着剤 |
US6404643B1 (en) * | 1998-10-15 | 2002-06-11 | Amerasia International Technology, Inc. | Article having an embedded electronic device, and method of making same |
JP2001077304A (ja) | 1999-06-28 | 2001-03-23 | Mitsubishi Gas Chem Co Inc | 電子部品の製造法 |
JP2001181684A (ja) * | 1999-12-28 | 2001-07-03 | Mitsubishi Gas Chem Co Inc | エッジビードリムーバ |
JP2002057252A (ja) * | 2000-08-07 | 2002-02-22 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP4462755B2 (ja) * | 2000-12-15 | 2010-05-12 | 京セラ株式会社 | ウエハー支持基板 |
JP2002203821A (ja) | 2000-12-28 | 2002-07-19 | Mitsubishi Gas Chem Co Inc | 接着および剥離法 |
JP4497737B2 (ja) | 2001-03-12 | 2010-07-07 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
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KR20050053020A (ko) | 2005-06-07 |
US20050170612A1 (en) | 2005-08-04 |
KR101043486B1 (ko) | 2011-06-23 |
CN1655337A (zh) | 2005-08-17 |
TW200524679A (en) | 2005-08-01 |
JP2005191550A (ja) | 2005-07-14 |
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