KR20050053020A - 기판의 첩부방법 - Google Patents
기판의 첩부방법 Download PDFInfo
- Publication number
- KR20050053020A KR20050053020A KR1020040099727A KR20040099727A KR20050053020A KR 20050053020 A KR20050053020 A KR 20050053020A KR 1020040099727 A KR1020040099727 A KR 1020040099727A KR 20040099727 A KR20040099727 A KR 20040099727A KR 20050053020 A KR20050053020 A KR 20050053020A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- adhesive
- semiconductor wafer
- adhesive liquid
- support plate
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
Abstract
Description
Claims (8)
- 연삭에 의해 반도체 웨이퍼 등의 기판을 박판화하는 공정에 앞서, 상기 기판의 회로 형성면을 서포트 플레이트에 첩부하는 방법으로서, 기판의 회로 형성면에 접착제액을 도포한 후, 해당 접착제액을 예비 건조시켜 접착제층으로서의 형상 유지를 가능하게 하고, 이어서 서포트 플레이트를 상기 접착제층에 밀어 부착하여 일체화하고, 이 밀어 부착함과 동시에 또는 밀어 부착함이 종료된 후에, 상기 접착제층을 건조시키는 것을 특징으로 하는 기판의 첩부방법.
- 제1항의 기판의 첩부방법에 있어서, 상기 접착제액으로서 노볼락형 페놀 수지계 재료를 사용하는 것을 특징으로 하는 기판의 첩부방법.
- 제1항의 기판의 첩부방법에 있어서, 상기 서포트 플레이트로서 두께방향으로 다수의 관통구멍을 갖는 것을 사용하고, 또한 상기 예비 건조에서는 밀어 눌렀을 때에 상기 관통구멍으로부터 접착제가 스며 나오지 않을 때까지 건조시키는 것을 특징으로 하는 기판의 첩부방법.
- 제1항의 기판의 첩부방법에 있어서, 상기 접착제층을 두껍게 하기 위해 접착제액의 도포와 예비 건조를 복수회 반복하는 것을 특징으로 하는 기판의 첩부방법.
- 제1항의 기판의 첩부방법에 있어서, 상기 예비 건조공정의 온도는 200℃ 이하, 상기 건조공정의 온도는 300℃ 이하로 하는 것을 특징으로 하는 기판의 첩부방법.
- 제1항의 기판의 첩부방법에 있어서, 상기 접착제는 알코올 또는 케톤에 가용성인 것을 특징으로 하는 기판의 첩부방법.
- 제1항의 기판의 첩부방법에 있어서, 상기 기판의 회로 형성면에 접착제액을 도포한 후, 해당 접착제액을 예비 건조하기 전에 기판의 바깥둘레부분에 형성된 접착제액의 비드부분을 용제에 의해 제거하는 것을 특징으로 하는 기판의 첩부방법.
- 제1항의 기판의 첩부방법에 있어서, 상기 접착제액으로서 아크릴계 수지재료를 사용하는 것을 특징으로 하는 기판의 첩부방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00402200 | 2003-12-01 | ||
JP2003402200 | 2003-12-01 | ||
JPJP-P-2004-00343477 | 2004-11-29 | ||
JP2004343477A JP2005191550A (ja) | 2003-12-01 | 2004-11-29 | 基板の貼り付け方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050053020A true KR20050053020A (ko) | 2005-06-07 |
KR101043486B1 KR101043486B1 (ko) | 2011-06-23 |
Family
ID=34797477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040099727A KR101043486B1 (ko) | 2003-12-01 | 2004-12-01 | 기판의 첩부방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7268061B2 (ko) |
JP (1) | JP2005191550A (ko) |
KR (1) | KR101043486B1 (ko) |
CN (1) | CN100474550C (ko) |
TW (1) | TW200524679A (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150035600A (ko) * | 2012-07-06 | 2015-04-06 | 베시 네덜란드 비.브이. | 전자 부품들을 분리, 적어도 부분적으로 건조 및 검사하기 위한 장치 및 방법 |
KR20150069536A (ko) * | 2013-12-13 | 2015-06-23 | 도쿄 오카 고교 가부시키가이샤 | 첩부 방법 |
KR20190071816A (ko) * | 2017-11-09 | 2019-06-24 | 후루카와 덴키 고교 가부시키가이샤 | 반도체 칩의 제조 방법 |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI232560B (en) | 2002-04-23 | 2005-05-11 | Sanyo Electric Co | Semiconductor device and its manufacture |
US7399683B2 (en) | 2002-06-18 | 2008-07-15 | Sanyo Electric Co., Ltd. | Manufacturing method of semiconductor device |
TWI229435B (en) | 2002-06-18 | 2005-03-11 | Sanyo Electric Co | Manufacture of semiconductor device |
TWI227550B (en) | 2002-10-30 | 2005-02-01 | Sanyo Electric Co | Semiconductor device manufacturing method |
JP4401181B2 (ja) | 2003-08-06 | 2010-01-20 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
JP2005150235A (ja) | 2003-11-12 | 2005-06-09 | Three M Innovative Properties Co | 半導体表面保護シート及び方法 |
TWI280618B (en) * | 2005-06-08 | 2007-05-01 | Advanced Semiconductor Eng | Method for machining a wafer |
JP4721828B2 (ja) * | 2005-08-31 | 2011-07-13 | 東京応化工業株式会社 | サポートプレートの剥離方法 |
US7498240B2 (en) * | 2005-08-31 | 2009-03-03 | Micron Technology, Inc. | Microfeature workpieces, carriers, and associated methods |
JP5020496B2 (ja) | 2005-10-28 | 2012-09-05 | 東京応化工業株式会社 | 接着剤組成物および接着フィルム |
TWI324800B (en) | 2005-12-28 | 2010-05-11 | Sanyo Electric Co | Method for manufacturing semiconductor device |
JP4619308B2 (ja) * | 2006-03-07 | 2011-01-26 | 三洋電機株式会社 | 半導体装置の製造方法及び支持テープ |
JP2007317822A (ja) | 2006-05-25 | 2007-12-06 | Sony Corp | 基板処理方法及び半導体装置の製造方法 |
JP5008340B2 (ja) * | 2006-06-01 | 2012-08-22 | 東京応化工業株式会社 | 基板の薄板化方法、貼り合わせシステムおよび薄板化システム |
US20080014532A1 (en) * | 2006-07-14 | 2008-01-17 | 3M Innovative Properties Company | Laminate body, and method for manufacturing thin substrate using the laminate body |
JP5074719B2 (ja) * | 2006-07-14 | 2012-11-14 | 東京応化工業株式会社 | ウエハを薄くする方法及びサポートプレート |
JP2008021929A (ja) * | 2006-07-14 | 2008-01-31 | Tokyo Ohka Kogyo Co Ltd | サポートプレート、搬送装置、剥離装置及び剥離方法 |
JP5027460B2 (ja) | 2006-07-28 | 2012-09-19 | 東京応化工業株式会社 | ウエハの接着方法、薄板化方法、及び剥離方法 |
JP2008041987A (ja) * | 2006-08-08 | 2008-02-21 | Tokyo Ohka Kogyo Co Ltd | サポートプレートとウェハとの剥離方法及び装置 |
JP2008063464A (ja) * | 2006-09-07 | 2008-03-21 | Tokyo Ohka Kogyo Co Ltd | 接着剤組成物、接着フィルム及び当該接着剤組成物の製造方法 |
JP5016296B2 (ja) * | 2006-11-22 | 2012-09-05 | 東京応化工業株式会社 | 接着剤組成物、及び接着フィルム |
JP4976829B2 (ja) * | 2006-11-29 | 2012-07-18 | 東京応化工業株式会社 | 接着剤組成物、及び接着フィルム |
JP4922752B2 (ja) | 2006-12-28 | 2012-04-25 | 東京応化工業株式会社 | 孔あきサポートプレート |
JP4825695B2 (ja) | 2007-01-19 | 2011-11-30 | 東京応化工業株式会社 | 液状溶剤当接ユニット |
JP4859716B2 (ja) * | 2007-03-14 | 2012-01-25 | オンセミコンダクター・トレーディング・リミテッド | ウエハ及びその搬送システム |
JP5238927B2 (ja) * | 2007-03-14 | 2013-07-17 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置の製造方法 |
JP2008244132A (ja) * | 2007-03-27 | 2008-10-09 | Sanyo Electric Co Ltd | 半導体装置の製造方法および半導体装置 |
SG147330A1 (en) * | 2007-04-19 | 2008-11-28 | Micron Technology Inc | Semiconductor workpiece carriers and methods for processing semiconductor workpieces |
US20090017323A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
US20090017248A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
JP2009130218A (ja) * | 2007-11-26 | 2009-06-11 | Tokyo Ohka Kogyo Co Ltd | 貼付装置および貼付方法 |
JP5209947B2 (ja) * | 2007-12-13 | 2013-06-12 | 東京応化工業株式会社 | 接着剤の処理方法 |
US7802359B2 (en) * | 2007-12-27 | 2010-09-28 | Freescale Semiconductor, Inc. | Electronic assembly manufacturing method |
JP5323385B2 (ja) * | 2008-01-30 | 2013-10-23 | 東京応化工業株式会社 | 接着剤組成物、および接着フィルム |
JP5271554B2 (ja) * | 2008-02-04 | 2013-08-21 | 東京応化工業株式会社 | サポートプレート |
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JP5497276B2 (ja) | 2008-07-08 | 2014-05-21 | 東京応化工業株式会社 | 接着剤組成物の製造方法 |
JP2010062269A (ja) * | 2008-09-02 | 2010-03-18 | Three M Innovative Properties Co | ウェーハ積層体の製造方法、ウェーハ積層体製造装置、ウェーハ積層体、支持層剥離方法、及びウェーハの製造方法 |
US8092628B2 (en) * | 2008-10-31 | 2012-01-10 | Brewer Science Inc. | Cyclic olefin compositions for temporary wafer bonding |
JP2010163495A (ja) * | 2009-01-13 | 2010-07-29 | Tokyo Ohka Kogyo Co Ltd | 接着剤組成物および接着フィルム |
JP5525782B2 (ja) | 2009-01-13 | 2014-06-18 | 東京応化工業株式会社 | 接着剤組成物および接着フィルム |
JP5428362B2 (ja) | 2009-02-04 | 2014-02-26 | 富士電機株式会社 | 半導体装置の製造方法 |
US20100200957A1 (en) | 2009-02-06 | 2010-08-12 | Qualcomm Incorporated | Scribe-Line Through Silicon Vias |
JP5572979B2 (ja) * | 2009-03-30 | 2014-08-20 | ソニー株式会社 | 半導体装置の製造方法 |
JP5695304B2 (ja) | 2009-06-09 | 2015-04-01 | 東京応化工業株式会社 | サポートプレート及びその製造方法、基板処理方法 |
JP5552365B2 (ja) * | 2009-06-30 | 2014-07-16 | 東京応化工業株式会社 | 接着剤組成物および接着フィルム |
JP5448619B2 (ja) | 2009-07-21 | 2014-03-19 | 東京応化工業株式会社 | サポートプレートの洗浄方法 |
US9263314B2 (en) * | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
JP5501899B2 (ja) * | 2010-08-26 | 2014-05-28 | 三菱電機株式会社 | 基板サポート板および基板サポート板へのウェハ仮固着方法 |
TW201241941A (en) * | 2010-10-21 | 2012-10-16 | Sumitomo Bakelite Co | A method for manufacturing an electronic equipment, and the electronic equipment obtained by using the method, as well as a method for manufacturing electronics and electronic parts, and the electronics and the electronic parts obtained using the method |
TWI540644B (zh) * | 2011-07-01 | 2016-07-01 | 漢高智慧財產控股公司 | 斥性材料於半導體總成中保護製造區域之用途 |
JP2013157510A (ja) * | 2012-01-31 | 2013-08-15 | Disco Abrasive Syst Ltd | 貼着装置 |
JP6209876B2 (ja) * | 2012-06-29 | 2017-10-11 | 日立化成株式会社 | 仮固定用フィルム、仮固定用フィルムシート及び半導体装置の製造方法 |
EP2978009B1 (en) | 2013-12-25 | 2018-03-21 | NGK Insulators, Ltd. | Handle substrate, composite substrate for semiconductor, and semiconductor circuit board and method for manufacturing same |
JP6550741B2 (ja) | 2014-12-17 | 2019-07-31 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6500481B2 (ja) | 2015-02-17 | 2019-04-17 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6606033B2 (ja) * | 2016-08-12 | 2019-11-13 | 富士フイルム株式会社 | 積層体および積層体の製造方法 |
US20190292415A1 (en) * | 2016-11-28 | 2019-09-26 | Mitsui Mining & Smelting Co., Ltd. | Adhesive sheet and method for peeling same |
KR20190088465A (ko) * | 2016-11-28 | 2019-07-26 | 미쓰이금속광업주식회사 | 다층 배선판의 제조 방법 |
JP7374657B2 (ja) * | 2019-08-21 | 2023-11-07 | 株式会社ディスコ | ウエーハの加工方法 |
US11791212B2 (en) * | 2019-12-13 | 2023-10-17 | Micron Technology, Inc. | Thin die release for semiconductor device assembly |
Family Cites Families (11)
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JPH05131358A (ja) * | 1991-07-03 | 1993-05-28 | Nikko Kyodo Co Ltd | 研磨加工法 |
JP2741362B2 (ja) * | 1995-12-05 | 1998-04-15 | 日化精工株式会社 | ウエハ−の仮着用接着剤 |
JPH1161079A (ja) * | 1997-08-21 | 1999-03-05 | The Inctec Inc | 精密加工用仮着接着剤 |
US6404643B1 (en) * | 1998-10-15 | 2002-06-11 | Amerasia International Technology, Inc. | Article having an embedded electronic device, and method of making same |
JP2001077304A (ja) | 1999-06-28 | 2001-03-23 | Mitsubishi Gas Chem Co Inc | 電子部品の製造法 |
JP2001181684A (ja) * | 1999-12-28 | 2001-07-03 | Mitsubishi Gas Chem Co Inc | エッジビードリムーバ |
JP2002057252A (ja) * | 2000-08-07 | 2002-02-22 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP4462755B2 (ja) * | 2000-12-15 | 2010-05-12 | 京セラ株式会社 | ウエハー支持基板 |
JP2002203821A (ja) | 2000-12-28 | 2002-07-19 | Mitsubishi Gas Chem Co Inc | 接着および剥離法 |
JP4497737B2 (ja) | 2001-03-12 | 2010-07-07 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
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KR20150035600A (ko) * | 2012-07-06 | 2015-04-06 | 베시 네덜란드 비.브이. | 전자 부품들을 분리, 적어도 부분적으로 건조 및 검사하기 위한 장치 및 방법 |
KR20150069536A (ko) * | 2013-12-13 | 2015-06-23 | 도쿄 오카 고교 가부시키가이샤 | 첩부 방법 |
KR20190071816A (ko) * | 2017-11-09 | 2019-06-24 | 후루카와 덴키 고교 가부시키가이샤 | 반도체 칩의 제조 방법 |
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US7268061B2 (en) | 2007-09-11 |
US20050170612A1 (en) | 2005-08-04 |
KR101043486B1 (ko) | 2011-06-23 |
CN100474550C (zh) | 2009-04-01 |
JP2005191550A (ja) | 2005-07-14 |
CN1655337A (zh) | 2005-08-17 |
TW200524679A (en) | 2005-08-01 |
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