JPH11219962A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH11219962A JPH11219962A JP10019182A JP1918298A JPH11219962A JP H11219962 A JPH11219962 A JP H11219962A JP 10019182 A JP10019182 A JP 10019182A JP 1918298 A JP1918298 A JP 1918298A JP H11219962 A JPH11219962 A JP H11219962A
- Authority
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- Japan
- Prior art keywords
- adhesive
- wafer
- film
- carrier film
- semiconductor device
- Prior art date
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Abstract
着剤をウエハに接着できる接着剤付半導体素子のダイボ
ンディング方法及びその方法で製造された耐リフロー性
に優れた半導体装置を製造する。 【解決手段】多数の半導体素子が形成されたウエハ4の
裏面にフィルム状単層接着剤1を熱圧着して得る接着剤
付ウエハに更にダイシングテープ6を貼り付け固着後、
個別の半導体素子7に分割し、このフィルム状接着剤付
き半導体素子を、ダイパットを持つリードフレームや有
機基板などにダイボンディングして半導体装置を製造す
る。
Description
方法及びそれを用いた半導体装置に関する。
(半導体素子のリードフレームへの接合)方法としては、
リードフレーム上のタブ部分にダイボンド材料を供給し
その上に半導体素子を載せ接着する方法が用いられてき
た。これらのダイボンディング材料としては、例えばA
u−Si共晶、半田、樹脂ペーストなどが知られてい
る。
脂ペーストを用いるダイボンディング方法が多用されて
いる。樹脂ペーストをリードフレームに供給する方法と
しては、スタンピング方式、ディスペンシング方式、ス
クリーン印刷方式が採用されているが、ディスペンシン
グ方式が最もよく使われている。
脂ペーストを充填し、ディスペンサーと呼ばれる装置に
よる気圧でペーストをタブ上に吐出する方法である。
が大きくなるに従って樹脂ペーストをタブ全面に均一に
塗布することが難しいという欠点がある。又樹脂ペース
トを用いた場合、硬化時接着層にボイドが発生するとい
う問題もある。
法として、フィルム状の接着剤を用いる方法が特開昭6
3−289822号公報、特開平1−19735号公報
に示されている。しかし、この方法は、素子のサイズに
応じてフィルムを切断しなければならないこと又、切断
フィルムを位置ずれしないように貼り付ける専用の高価
な装置が必要となるという問題がある。
特開平6−302629号公報には、次のような方法が
開示されている。まず、キャリアフィルム上に接着剤を
膜状に塗布乾燥し、離型フィルムをかぶせて接着剤付き
キャリアーシートを作成しする。ついで、離型フィルム
をはがしてウエハの裏面にキャリアーシート上の接着剤
を熱転写して、接着剤付きウエハとする。次に、接着剤
付きウエハをダイシングテープ上に貼り付けた後、ダイ
シング(分割切断)して接着剤付き半導体素子に分割す
る。さらに、接着剤付き半導体素子をダイシングテープ
から引き剥がしてリードフレームに熱圧着し、半導体素
子をリードフレームに接着させる半導体素子の取り付け
る。
に、接着剤を熱転写する際、接着剤と積層しているキャ
リアフィルムが熱収縮するためウエハに大きな反りが生
じる問題がある。第二に、熱転写する温度は、キャリア
フィルムの耐熱温度以上に設定できないため、接着剤を
ウエハに熱転写する温度が制限される問題がある。
ハに大きな反りを生じることなく、幅広い温度で接着剤
をウエハに接着でき、かつ簡単な装置でダイボンディン
グできる接着剤を用いた半導体装置の製造方法を提供す
ることにある。
素子が形成されたウエハ裏面にフィルム状単層接着剤を
熱圧着して接着剤付ウエハとし、該接着剤付ウエハをダ
イシングテープに貼り付け固着して個別半導体素子に分
割切断した後、前記ダイシングテープを剥離して得られ
る接着剤付き半導体素子を支持部材にダイボンディング
することを特徴とする半導体装置の製造方法に関する。
剤が、塗工用ワニスをキャリアフィルムの上に塗布し、
加熱して得られたキャリアフィルム付接着剤から、前記
キャリアフィルムを除去したものである前記半導体装置
の製造方法に関する。
実施形態を説明する。図1は、フィルム状単層接着剤を
ウエハ裏面に接着する工程からダイシングして接着剤付
半導体素子とする工程の説明図である。
接着剤、2はキャリァフィルムとしてのポリプロピレン
フィルムである。このフィルム状単層接着剤1は、例え
ば次のように作製する。まず、ポリイミド樹脂を有機溶
剤に溶解する。ここで用いられる有機溶媒は、均一に溶
解又は混練できるものであれば特に制限はない。つい
で、必要に応じ添加剤を加え、混合する。こうして得た
ワニスを、例えば、ポリエステル製シート等のキャリア
フィルム2の上に均一に塗布し、使用した溶媒が十分に
揮発する条件、すなわち、おおむね60〜200℃の温
度で、0.1〜30分間加熱し、ベースフィルム(キャ
リァフィルム)付接着フィルムすなわちフィルム状単層
接着剤1とする。使用時には、キャリアフィルム2を除
去してフィルム状単層接着剤1のみを接着に用いる。
単層接着剤1をシリコンウエハ4に接着する。3はヒー
ト付ロール、5は熱板であり、このフィルム状単層接着
剤1をシリコンウエハ4にヒート付ロール3を用いて熱
板5と挟み込むようにして加圧加熱し、およそ、60℃
から200℃の温度で0.1〜10分間アニールし、接
着剤付きウエハ(図1,(c))とする。
し、6はダイシングテープである。接着フィルム(フィ
ルム状単層接着剤)1付きウエハのフィルム側にダイシ
ングテーブ6を貼付け、ダイシングし、図1(e)に示
すような接着剤付半導体素子7に分割する。
ードフレームタブ部に接着し、半導体装置を製造する工
程の説明図である。図2において、8は吸引コレット、
9は突き上げコレット、10はダイパット部、11はリ
ードフレーム、12はヒートブロック、13はワイヤ、
14は封止樹脂である。
子7をダイシングテープ6から吸引コレット8、突き上
げコレット9を用いて引き剥がす。次に、(b)に示す
ように、支持部、例えばリードフレーム11上のダイパ
ット部10に圧着し、ヒートブロック12上で後硬化し
て接着する。次に、図2、(c)に示すように、ワイヤ
ー13のボンディングを行い、さらに、樹脂14で封止
して半導体装置15とする。(図2(d))本発明にお
いて、用いられるフィルム状単層接着剤1としては、フ
ィルム状になるものであれば種々のものを使用できる。
例えば、熱可塑性ポリイミド樹脂などの熱可塑性樹脂や
エポキシ樹脂などの熱硬化性樹脂、またはその混合物か
らなる樹脂を主体としたもの、前記樹脂に無機フィラー
を混合したもの等が挙げられる。また、フィルム状単層
接着剤1の表面は粘着性がないものが好ましい。
件としては、接着フィルム(フィルム状単層接着剤1)
のガラス転移温度Tg(動的粘弾性測定におけるα緩和ピ
ーク温度)以上で熱分解温度(熱重量分析における重量減
少開始温度)以下が好ましい。接着フィルムの圧着温度
がTg未満では、貼り付け性が低下し、熱分解温度を超
えると接着フィルムが熱分解し接着性が低下するので好
ましくない。おおよそ、120℃から200℃が好まし
い。ウエハ4に貼り付ける圧力は、0.03MPa〜2
MPaが好ましい。0.03MPa未満では圧力が弱す
ぎてボイドが残留してしまい、2MPaを超えると圧力
が強すぎてウエハが割れる心配があるからである。
コンウエハ、化合物ウエハなどがあり、特に限定されな
い。
1等の支持部材上に接着する温度は、Tgより70℃以
上高い温度で熱分解温度以下であることが好ましい。接
着剤付半導体素子7の接着温度がTgより70℃未満であ
ると接着性が低下する傾向があり、熱分解温度を超える
とフィルム状接着剤1が熱分解し接着力が低下する傾向
があるので好ましくない。具体的には、温度はおおよそ
160℃〜240℃が好ましい。また、圧力は0.03
MPa〜2MPaが好ましい。0.03MPa未満では圧力が弱
すぎてボイドが残留することがあり、2MPaを超えると
圧力が強すぎて半導体素子が割れる心配があるからであ
る。
る支持部材としては、実施例で述べたリードフレームの
ダイパット部の他に、セラミック配線板、ガラスエポキ
シ配線板、ポリイミド配線板等の半導体素子搭載部が挙
げられる。
詳しく説明するが、本発明はこれにより限定きれるもの
ではない。
0重量部及びビスフェノールAD型エポキシ樹脂(エポ
キシ当量175)5部、硬化剤フェノールボラック樹脂
5部に、シクロヘキサノンとジメチルアセトアミドの等
重量混合溶剤(有機溶媒)280重量部を加えて溶解さ
せる。ここに、銀粉を70重量部加えて、よく攪拌し、
均一に分散させ、塗工用ワニスとする。
プロピレン)上に塗工し、熱風循環式乾燥機の中で加熱
して、溶媒を揮発乾燥させ、キャリアフィルムから剥離
して、フィルム状単層接着剤を製造した。
りも大きめに切り、ウエハ裏面を上にして、フィルム状
接着剤を載せ0.15MPaで加圧,180℃で加熱する
事により、フィルム状接着剤付きウエハを得る。
間180℃でアニールし、残存揮発分を除く。その後、
ウエハに接着後のウエハ(5インチ)の外観を観察し、ま
た、反りを測定した。
ダイシングテープを貼付、ダイシング装置でフルカット
する事により接着剤付き半導体素子へ分割し、展張す
る。ダイシングテープ上に分割された接着剤付き半導体
素子はダイボンダーによりダイシングテープの下からピ
ンで突き上げられ、吸引コレットにより引き剥がされ
る。
0g、時間5秒で接着剤付き半導体素子をマウントす
る。日立化成工業株式会社製封止材(商品名CEL9200)で
モールドし、半導体装置とする。
恒温恒湿器中で168時間処理した後、IRリフロー炉で
240℃、10sec加熱する。その後、サンプルをポリ
エステル樹脂で注型し、ダイアモンドカッターで切断し
た断面を顕微鏡で観察して、リフロークラックの発生数
を評価する事により耐リフロークラック性の評価を行っ
た。結果を表1に示す。
の発生が無く、ウエハの反りが50μm/5インチと小
さく、また、リフロークラックの発生も見られなかっ
た。
0重量部及びビスフェノールAD型エポキシ樹脂(エポ
キシ当量175)5部、硬化剤フェノールボラック樹脂
5部に、シクロヘキサノンとジメチルアセトアミドの等
重量混合溶剤(有機溶媒)280重量部を加えて溶解さ
せる。ここに、銀粉を70重量部加えて、よく攪拌し、
均一に分散させ、塗工用ワニスとする。
エチレンテレフタート)上に塗工し、熱風循環式乾燥機
の中で加熱して、溶媒を揮発乾燥させ、キャリアフィル
ム付きフィルム状接着剤を製造した。
ウエハのサイズよりも大きめに切る。ウエハ裏面を上に
し、そこへ、キャリアフィルム付きフィルム状接着剤を
のせ0.15MPaで加圧,150℃〜180℃で加熱す
る事により、キャリアフィルム付きフィルム状接着剤付
きウエハを得る。キャリアフィルムを剥離した後、フィ
ルム状接着剤付きウエハは、約30秒間150℃〜18
0℃でアニールし、残存揮発分を除く。その後、ウエハ
に接着後のウエハ(5インチ)の外観を観察し、また、反
りを測定した。
ダイシングテープを貼付、ダイシング装置でフルカット
する事により接着剤付き半導体素子へ分割し、展張す
る。ダイシングテープ上に分割された接着剤付き半導体
素子はダイボンダーによりダイシングテープの下からピ
ンで突き上げられ、吸引コレットにより引き剥がされ
る。
0g、時間5秒で接着剤付き半導体素子をマウントす
る。日立化成工業株式会社製封止材(商品名CEL9200)で
モールドし半導体装置とする。
恒温恒湿器中で168時間処理した後、IRリフロー炉で
240℃、10sec加熱する。その後、サンプルをポリ
エステル樹脂で注型し、ダイアモンドカッターで切断し
た断面を顕微鏡で観察して、リフロークラックの発生数
を評価する事により耐リフロークラック性の評価を行っ
た。結果を前記表1に示す。
生が有り、ウエハの反りも大きく、また、リフロークラ
ックの発生率も高かった。
アフィルムを有するか否かが、接着層のボイドの発生、
ウエハの反り及びリフロークラックの発生率に大きく影
響することが明らかである。
ば、キャリアフィルムの無いフィルム状接着剤を用いて
半導体素子のダイボンディングを行うことにより、ウエ
ハに大きな反りを生じることなく、幅広い温度で接着剤
をウエハに接着でき、また、接着層にボイドが無く、耐
リフロー性に優れた半導体装置を製造することができ
る。
ウエハ裏面に接着する工程からダイシングして接着剤付
半導体素子とする工程の説明図。
リードフレームに接着し、半導体装置を製造する工程の
説明図。
Claims (2)
- 【請求項1】多数の半導体素子が形成されたウエハ裏面
にフィルム状単層接着剤を熱圧着して接着剤付ウエハと
し、該接着剤付ウエハをダイシングテープに貼り付け固
着して個別半導体素子に分割切断した後、前記ダイシン
グテープを剥離して得られる接着剤付き半導体素子を支
持部材にダイボンディングすることを特徴とする半導体
装置の製造方法。 - 【請求項2】前記フィルム状単層接着剤が、塗工用ワニ
スをキャリアフィルムの上に塗布し、加熱して得られた
キャリアフィルム付接着剤から、前記キャリアフィルム
を除去したものであることを特徴とする請求項1記載の
半導体装置の製造方法。
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JP2002359212A (ja) * | 2001-06-01 | 2002-12-13 | Disco Abrasive Syst Ltd | 半導体ウエーハの切削方法 |
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