JP6647267B2 - 半導体チップの製造方法 - Google Patents
半導体チップの製造方法 Download PDFInfo
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- JP6647267B2 JP6647267B2 JP2017216087A JP2017216087A JP6647267B2 JP 6647267 B2 JP6647267 B2 JP 6647267B2 JP 2017216087 A JP2017216087 A JP 2017216087A JP 2017216087 A JP2017216087 A JP 2017216087A JP 6647267 B2 JP6647267 B2 JP 6647267B2
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
また、前記マスク材層は非放射線硬化型の粘着剤であり、前記表面保護テープの粘着剤層は放射線硬化型の粘着剤であってもよい。
以下に、本発明の半導体チップの製造方法(以下、単に「本発明の製造方法」という。)について説明する。本発明の製造方法は、半導体ウェハをプラズマダイシングして半導体チップを得る方法である。以下に説明するように、本発明の製造方法はフォトリソグラフィプロセスが不要であり、半導体チップないし半導体製品の製造コストを大幅に抑えることができる。
(a)表面保護テープと、表面保護テープ上に設けられたマスク材層とを有するマスク一体型表面保護テープを、半導体ウェハのパターン面側に貼り合わせ、半導体ウェハの裏面を研削し、研削した半導体ウェハの裏面にウェハ固定テープを貼り合わせ、リングフレームで支持固定する工程、
(b)マスク一体型表面保護テープから表面保護テープを剥離して、マスク材層を表面に露出させた後、マスク材層のうち、半導体ウェハのストリートに相当する部分をレーザーにより切断して半導体ウェハのストリートを開口する工程、
(c)プラズマ照射により半導体ウェハをストリートで分断して半導体チップに個片化するプラズマダイシング工程、及び、
(d)マスク材層を除去剤によって除去する工程。
本発明の製造方法の第1の実施形態を図1〜図5を参照して説明する。半導体ウェハ1は、その表面Sに半導体素子の回路などが形成されたパターン面2を有している(図1(a)参照)。半導体ウェハ1のパターン面2側には、マスク一体型表面保護テープ3が貼合される(図1(b)参照)。以上により、パターン面2がマスク一体型表面保護テープ3で被覆された半導体ウェハ1が得られる(図1(c)参照)。
マスク一体型表面保護テープ3は、基材フィルム3aa上に粘着剤層3abが設けられ、さらに粘着剤層3ab上にマスク材層3bが設けられた構成を有し、パターン面2に形成された半導体素子を保護する機能を有する。即ち、後工程のウェハ薄膜化工程ではパターン面2で半導体ウェハ1を支持してウェハの裏面が研削されるために、この研削時の負荷に耐える必要がある。そのため、マスク一体型表面保護テープ3は単なるレジスト膜等とは異なり、パターン面2に形成される素子を被覆するだけの厚みがあって、その押圧抵抗は低く、また研削時のダストや研削水などの浸入が起こらないように素子を密着できるだけの密着性が高いものである。
マスク一体型表面保護テープ3のうち基材フィルム3aaはプラスチックやゴム等からなり、例えばポリエチレン、ポリプロピレン、エチレン−プロピレン共重合体、ポリブテン−1、ポリ−4−メチルペンテン−1、エチレン−酢酸ビニル共重合体、エチレン−アクリル酸共重合体、アイオノマー等のα−オレフィンの単独重合体または共重合体、あるいはこれらの混合物、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリフェニレンサルファイド、ポリエーテルイミド、ポリイミド、ポリカーボネート、ポリメチルメタクリレート、ポリウレタン、スチレン−エチレン−ブテン−もしくはペンテン系共重合体等の単体もしくは2種以上を混合させたもの、さらにこれらにこれら以外の樹脂や充填材、添加剤等が配合された樹脂組成物をその材質として挙げることができ、要求特性に応じて適宜に選ぶことができる。低密度ポリエチレンとエチレン酢酸ビニル共重合体の積層体や、ポリプロピレンとポリエチレンテレフタレートの積層体、ポリエチレンテレフタレート、ポリエチレンナフタレートは好適な材質の一つである。
粘着剤層3abは、マスク材層3bと共に、パターン面2に形成される素子の凹凸を吸収してパターン面2との密着性を高め、パターン面2を保護する役割を担う。マスク一体型表面保護テープ3をウェハ薄膜化工程(裏面研削工程)の負荷に耐えるものとするために、ウェハ薄膜化工程においては、粘着剤層3abと、マスク材層3bないし基材フィルム3aaとの密着性が高いことが好ましい。一方、ウェハ薄膜化工程後においては、基材フィルム3aaと一体となってマスク材層3bと剥離されるために、粘着剤層3abとマスク材層3bとの密着性は低いことが好ましい(剥離性が高いことが好ましい)。
エステル成分の割合が100モル%でない場合、残部のモノマー成分は(メタ)アクリロイル基を重合性基として重合した形態で存在するモノマー成分((メタ)アクリル酸由来の構成成分等)であることが好ましい。また、(メタ)アクリル系共重合体の全モノマー成分中、後述する硬化剤と反応する官能基(例えばヒドロキシ基)を有する(メタ)アクリル酸エステル成分の割合は、1モル%以上が好ましく、2モル%以上がより好ましく、5モル%以上がより好ましく、10モル%以上がより好ましい。また当該(メタ)アクリル酸エステル成分の割合は35モル%以下が好ましく、25モル%以下がより好ましい。また、(メタ)アクリル系共重合体の全モノマー成分中、後述する硬化剤と反応する官能基(例えばヒドロキシ基)を有する構成成分(モノマー成分)の割合は、5モル%以上が好ましく、10モル%以上がより好ましい。当該割合の上限値は35モル%以下が好ましく、25モル%以下がより好ましい。
マスク材層3bは、パターン面2への貼着に際し半導体素子等を傷つけにくく、また、その除去の際に半導体素子等の破損や表面への粘着剤残留を生じにくいものである。マスク材層3bには、非放射線硬化型である、いわゆる感圧型の粘着剤が好適に用いられる。この感圧型の粘着剤としては、上述した、(メタ)アクリル系共重合体と硬化剤との混合物を好適に用いることができる。
ウェハ固定テープ4は、半導体ウェハ1を保持し、プラズマダイシング工程にさらされても耐えうるプラズマ耐性が必要である。またピックアップ工程においては良好なピックアップ性や場合によってはエキスパンド性等も要求されるものである。こうしたウェハ固定テープ4には、上記表面保護テープ3aと同様のテープを用いることができる。また一般的にダイシングテープと称される従来のプラズマダイシング方式で利用される公知のダイシングテープを用いることができる。また、ピックアップ後のダイボンディング工程への移行を容易にするために、粘着剤層3abと基材フィルム3aaとの間にダイボンディング用接着剤を積層したダイシングダイボンディングテープを用いることもできる。
図6に示す第2実施形態では、前述した第1実施形態における表面保護テープ3aを剥離する工程の前に、マスク一体型表面保護テープ3に紫外線等の放射線を照射して粘着剤層3abを硬化させる工程を含む点で第1実施形態と異なる。その他の工程は第1実施形態と同じである。
構成単位として、ラウリルアクリレート:74mol%、アクリル酸メチル:6mol%、2-ヒドロキシエチルアクリレート:20mol%由来の構成単位を各モル比で有するアクリルポリマーB(Mw:35万、酸価:7mgKOH/g、水酸基価:60mgKOH/g)100質量部に対し、イソシアネート硬化剤(商品名:L‐45、東ソー株式会社製)を1.0質量部配合して粘着剤組成物Aを得た。
構成単位として、2−エチルヘキシルアクリレート:80mol%、アクリル酸メチル:1mol%、2-ヒドロキシエチルアクリレート:19mol%由来の構成単位を各モル比で有するアクリルポリマー100質量部に対し、分子中に光重合性の炭素−炭素二重結合とイソシアネート基を有する2−イソシアナトエチルメタクリレート(商品名:MOI、昭和電工社製)を反応させ、分子中に光重合性の炭素−炭素二重結合を有するアクリルポリマーA(Mw:75万、酸価:6mgKOH/g、水酸基価:30mgKOH/g)を得た。
上記で得られたマスク一体型表面保護テープ3を用いて半導体ウェハ1を加工した。マスク材層3bの除去剤16としてメチルエチルケトン(MEK)を噴射した。
除去剤16を酢酸エチルとした以外は、実施例1と同じ方法でマスク除去を行った。
除去剤16をエタノールとした以外は、実施例1と同じ方法でマスク除去を行った。
除去方法として、酸素ガスをプラズマ化したアッシング工程を適用した以外は実施例1と同様の方法でマスク除去を行った。
各除去方法を使用したのち、半導体ウェハ1の表面を顕微鏡で観察した。ウェハ上にマスク材層3bが残っているものを「A」、それ以外のものを「C」として評価した。
マスク除去後のウェハについて、表面状態を光学顕微鏡で観察した。加工前と変化無いものをA、表面に荒れが見られたものをCとした。
2………パターン面
3………マスク一体型表面保護テープ
3a………表面保護テープ
3aa………基材フィルム
3ab………粘着剤層
3b………マスク材層
4………ウェハ固定テープ
7………チップ
12………ウェハ研削装置
13………リングフレーム
15………SF6ガスプラズマ
16………除去剤
17………ピン
18………コレット
S………表面
B………裏面
L………レーザー
Claims (4)
- 半導体チップの製造方法であって、
表面保護テープと、前記表面保護テープ上に設けられたマスク材層とを有するマスク一体型表面保護テープを、半導体ウェハのパターン面側に貼り合わせ、前記半導体ウェハの裏面を研削し、研削した前記半導体ウェハの裏面にウェハ固定テープを貼り合わせ、リングフレームで支持固定する工程aと、
前記マスク一体型表面保護テープから前記表面保護テープを剥離して、前記マスク材層を表面に露出させた後、前記マスク材層のうち、前記半導体ウェハのストリートに相当する部分をレーザーにより切断して前記半導体ウェハの前記ストリートを開口する工程bと、
プラズマ照射により前記半導体ウェハを前記ストリートで分断して半導体チップに個片化するプラズマダイシング工程cと、
前記マスク材層を除去剤によって除去する工程dと、
を具備し、
前記除去剤は、有機溶剤であり、
前記マスク材層は、前記有機溶剤に可溶な粘着剤であることを特徴とする半導体チップの製造方法。 - 前記有機溶剤が、メチルエチルケトン、エタノールまたは酢酸エチル、若しくはこれらの組合せであることを特徴とする請求項1記載の半導体チップの製造方法。
- 前記工程dにおいて、分断された前記半導体ウェハを回転させながら、上方から前記除去剤を供給することを特徴とする請求項1または請求項2に記載の半導体チップの製造方法。
- 前記マスク材層は非放射線硬化型の粘着剤であり、前記表面保護テープの粘着剤層は放射線硬化型の粘着剤であることを特徴とする請求項1から請求項3のいずれかに記載の半導体チップの製造方法。
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