CN100468712C - 穿通电极、设有穿通电极的隔片及其制造方法 - Google Patents
穿通电极、设有穿通电极的隔片及其制造方法 Download PDFInfo
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- CN100468712C CN100468712C CNB2005100625051A CN200510062505A CN100468712C CN 100468712 C CN100468712 C CN 100468712C CN B2005100625051 A CNB2005100625051 A CN B2005100625051A CN 200510062505 A CN200510062505 A CN 200510062505A CN 100468712 C CN100468712 C CN 100468712C
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Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004099681 | 2004-03-30 | ||
JP2004099681A JP4800585B2 (ja) | 2004-03-30 | 2004-03-30 | 貫通電極の製造方法、シリコンスペーサーの製造方法 |
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CN1677659A CN1677659A (zh) | 2005-10-05 |
CN100468712C true CN100468712C (zh) | 2009-03-11 |
Family
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CNB2005100625051A Expired - Fee Related CN100468712C (zh) | 2004-03-30 | 2005-03-30 | 穿通电极、设有穿通电极的隔片及其制造方法 |
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US (2) | US20050218497A1 (zh) |
JP (1) | JP4800585B2 (zh) |
CN (1) | CN100468712C (zh) |
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KR100986296B1 (ko) * | 2008-09-05 | 2010-10-07 | 삼성전기주식회사 | 반도체 패키지 및 그 제조 방법 |
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US7994048B2 (en) | 2011-08-09 |
JP4800585B2 (ja) | 2011-10-26 |
US20070243706A1 (en) | 2007-10-18 |
US20050218497A1 (en) | 2005-10-06 |
JP2005286184A (ja) | 2005-10-13 |
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