KR100986296B1 - 반도체 패키지 및 그 제조 방법 - Google Patents
반도체 패키지 및 그 제조 방법 Download PDFInfo
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- KR100986296B1 KR100986296B1 KR1020080087908A KR20080087908A KR100986296B1 KR 100986296 B1 KR100986296 B1 KR 100986296B1 KR 1020080087908 A KR1020080087908 A KR 1020080087908A KR 20080087908 A KR20080087908 A KR 20080087908A KR 100986296 B1 KR100986296 B1 KR 100986296B1
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- Prior art keywords
- metal post
- hole
- semiconductor package
- conductive pattern
- insulating layer
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (9)
- 삭제
- 삭제
- 삭제
- 삭제
- 일면에 전도성 패턴(conductive pattern)이 형성된 기판(substrate)을 제공하는 단계;상기 전도성 패턴이 노출되도록 관통홀이 형성되는 절연층을 상기 기판의 일면에 형성하는 단계;상기 관통홀 및 상기 절연층에 시드층을 형성하는 단계;상기 관통홀과 상응하도록 충전홀이 형성되는 레지스트(resist)를 상기 절연층에 형성하는 단계;전해도금으로 상기 관통홀 및 상기 충전홀에 전도성 물질을 충전하여, 일단이 전도성 패턴에 접하고 타단은 절연층으로부터 돌출되도록 상기 관통홀에 메탈 포스트(metal post)를 형성하는 단계;상기 레지스트를 제거하는 단계;상기 시드층 중 상기 관통홀에 형성된 부분을 제외한 부분을 제거하는 단계; 및상기 메탈 포스트의 타단에 솔더 범프(solder bump)를 형성하는 단계를 포함하는 반도체 패키지(semiconductor package) 제조 방법.
- 삭제
- 제5항에 있어서,상기 충전홀의 직경은, 상기 관통홀의 직경보다 큰 것을 특징으로 하는 반도체 패키지 제조 방법.
- 삭제
- 삭제
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080087908A KR100986296B1 (ko) | 2008-09-05 | 2008-09-05 | 반도체 패키지 및 그 제조 방법 |
US12/388,217 US20100059881A1 (en) | 2008-09-05 | 2009-02-18 | Semiconductor package and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080087908A KR100986296B1 (ko) | 2008-09-05 | 2008-09-05 | 반도체 패키지 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100028941A KR20100028941A (ko) | 2010-03-15 |
KR100986296B1 true KR100986296B1 (ko) | 2010-10-07 |
Family
ID=41798511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080087908A KR100986296B1 (ko) | 2008-09-05 | 2008-09-05 | 반도체 패키지 및 그 제조 방법 |
Country Status (2)
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US (1) | US20100059881A1 (ko) |
KR (1) | KR100986296B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4800585B2 (ja) * | 2004-03-30 | 2011-10-26 | ルネサスエレクトロニクス株式会社 | 貫通電極の製造方法、シリコンスペーサーの製造方法 |
KR20140019173A (ko) * | 2012-08-06 | 2014-02-14 | 삼성전기주식회사 | 솔더 코팅볼을 이용한 패키징 방법 및 이에 따라 제조된 패키지 |
KR102240704B1 (ko) * | 2014-07-15 | 2021-04-15 | 삼성전기주식회사 | 패키지 기판, 패키지 기판의 제조 방법 및 이를 이용한 적층형 패키지 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002190544A (ja) * | 2000-12-19 | 2002-07-05 | Hitachi Cable Ltd | 配線基板、半導体装置、及びその製造方法 |
KR20060048594A (ko) * | 2004-06-29 | 2006-05-18 | 신꼬오덴기 고교 가부시키가이샤 | 관통 전극 및 그 형성 방법 |
KR20060070930A (ko) * | 2004-12-21 | 2006-06-26 | 삼성전기주식회사 | 패키지 기판의 제조 방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7115998B2 (en) * | 2002-08-29 | 2006-10-03 | Micron Technology, Inc. | Multi-component integrated circuit contacts |
US6958291B2 (en) * | 2003-09-04 | 2005-10-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect with composite barrier layers and method for fabricating the same |
-
2008
- 2008-09-05 KR KR1020080087908A patent/KR100986296B1/ko active IP Right Grant
-
2009
- 2009-02-18 US US12/388,217 patent/US20100059881A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002190544A (ja) * | 2000-12-19 | 2002-07-05 | Hitachi Cable Ltd | 配線基板、半導体装置、及びその製造方法 |
KR20060048594A (ko) * | 2004-06-29 | 2006-05-18 | 신꼬오덴기 고교 가부시키가이샤 | 관통 전극 및 그 형성 방법 |
KR20060070930A (ko) * | 2004-12-21 | 2006-06-26 | 삼성전기주식회사 | 패키지 기판의 제조 방법 |
Also Published As
Publication number | Publication date |
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US20100059881A1 (en) | 2010-03-11 |
KR20100028941A (ko) | 2010-03-15 |
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