CN100400720C - 精密垂直温差梯度冷凝单晶体生长装置及方法 - Google Patents
精密垂直温差梯度冷凝单晶体生长装置及方法 Download PDFInfo
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- CN100400720C CN100400720C CNB2006100603377A CN200610060337A CN100400720C CN 100400720 C CN100400720 C CN 100400720C CN B2006100603377 A CNB2006100603377 A CN B2006100603377A CN 200610060337 A CN200610060337 A CN 200610060337A CN 100400720 C CN100400720 C CN 100400720C
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Families Citing this family (31)
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CN100557091C (zh) * | 2007-11-07 | 2009-11-04 | 华东理工大学 | 一种利用温度梯度合成硒化镉纳米晶的微反应装置与方法 |
CN101319374B (zh) * | 2008-05-08 | 2010-07-28 | 刘盛浦 | 光学级单面长石英晶体生长工艺 |
CN101736401B (zh) * | 2008-11-10 | 2013-07-24 | Axt公司 | 锗晶体生长的方法和装置 |
JP5664239B2 (ja) | 2009-01-20 | 2015-02-04 | 住友電気工業株式会社 | 導電性GaAs単結晶と導電性GaAs単結晶基板およびそれらの作製方法 |
CN102061518B (zh) * | 2010-11-26 | 2012-06-27 | 中国科学院上海技术物理研究所 | 碲镉汞液相外延系统生长起始温度的精确控制方法 |
CN104152983A (zh) * | 2014-08-01 | 2014-11-19 | 北京雷生强式科技有限责任公司 | 一种用于生长硒化镉晶体的坩埚及硒化镉晶体的生长方法 |
CN104165898A (zh) * | 2014-08-21 | 2014-11-26 | 共慧冶金设备科技(苏州)有限公司 | 大温度梯度布里奇曼炉 |
CN104313681A (zh) * | 2014-11-07 | 2015-01-28 | 中国工程物理研究院化工材料研究所 | 一种用于多元化合物晶体生长的设备及其应用 |
CN104404615B (zh) * | 2014-12-16 | 2017-02-08 | 中国电子科技集团公司第四十六研究所 | 一种锑化镓单晶生长的平面结晶界面控制结构及使用方法 |
CN105803515A (zh) * | 2014-12-29 | 2016-07-27 | 有研光电新材料有限责任公司 | 一种vgf砷化镓单晶生长新工艺 |
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CN105543949B (zh) * | 2016-03-10 | 2018-02-13 | 中国电子科技集团公司第十三研究所 | 注入原位合成连续vgf/vb生长化合物半导体单晶的制备方法 |
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CN107268070A (zh) * | 2017-06-10 | 2017-10-20 | 中国科学院合肥物质科学研究院 | 一种低吸收磷锗锌晶体生长的方法 |
CN107313110B (zh) * | 2017-06-27 | 2020-06-09 | 台山市华兴光电科技有限公司 | 一种p型磷化铟单晶制备配方及制备方法 |
CN108624948B (zh) * | 2018-03-30 | 2020-12-25 | 广东先导先进材料股份有限公司 | 砷化镓单晶的生长装置及生长方法 |
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CN109252216B (zh) * | 2018-11-19 | 2020-03-20 | 成都斯力康科技股份有限公司 | 控制加热温场提纯制备多晶硅的装置及工艺 |
CN109252220A (zh) * | 2018-12-04 | 2019-01-22 | 中国电子科技集团公司第四十六研究所 | 一种vgf/vb砷化镓单晶炉结构及生长方法 |
CN110565168A (zh) * | 2019-09-20 | 2019-12-13 | 山西中科晶电信息材料有限公司 | 一种炉体温度可调的冷壁单晶炉及砷化镓晶体生长方法 |
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CN110512274A (zh) * | 2019-09-30 | 2019-11-29 | 山西中科晶电信息材料有限公司 | 一种基于VGF法的减少GaAs晶体孪晶的装置 |
CN111020689A (zh) * | 2019-12-13 | 2020-04-17 | 广东先导先进材料股份有限公司 | 晶体生长装置及方法 |
CN111809229B (zh) * | 2020-06-12 | 2022-03-29 | 安徽光智科技有限公司 | 一种锑化铟单晶的制备方法及其装置 |
CN112195506A (zh) * | 2020-09-29 | 2021-01-08 | 威科赛乐微电子股份有限公司 | 一种异形pbn和石英组合坩埚 |
CN112176398B (zh) * | 2020-10-22 | 2023-07-18 | 云南鑫耀半导体材料有限公司 | 一种vgf法生长单晶的单晶炉结构和温度控制方法 |
CN112680781B (zh) * | 2020-12-09 | 2023-10-03 | 清远先导材料有限公司 | 碲化镉晶体生长装置及其生长方法 |
CN112851090B (zh) * | 2021-01-25 | 2023-02-28 | 中天科技精密材料有限公司 | 石英母管的生产设备及生产方法 |
CN113862772A (zh) * | 2021-09-27 | 2021-12-31 | 云南北方光学科技有限公司 | 大尺寸红外光学用锗窗口材料的制备装置及用其制备大尺寸红外光学用锗窗口材料的方法 |
CN114808107B (zh) * | 2022-03-31 | 2024-01-12 | 威科赛乐微电子股份有限公司 | 一种晶体生长单晶炉、坩埚及晶体生长方法 |
CN116536768B (zh) * | 2023-06-29 | 2023-09-29 | 浙江珏芯微电子有限公司 | 一种碲锌镉单晶的生长用坩埚及生长方法 |
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CN1603475A (zh) * | 2004-09-06 | 2005-04-06 | 周永宗 | 一种纯静态双加热温梯法晶体生长装置 |
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CN1485467A (zh) * | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | 大面积晶体的温梯法生长装置及其生长晶体的方法 |
CN2637505Y (zh) * | 2003-08-08 | 2004-09-01 | 中国科学院上海光学精密机械研究所 | 大面积晶体的温梯法生长装置 |
CN1603475A (zh) * | 2004-09-06 | 2005-04-06 | 周永宗 | 一种纯静态双加热温梯法晶体生长装置 |
CN2745959Y (zh) * | 2004-09-06 | 2005-12-14 | 周永宗 | 双加热温梯法晶体生长装置 |
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