CN1318662C - CdTe单晶和CdTe多晶及其制备方法 - Google Patents
CdTe单晶和CdTe多晶及其制备方法 Download PDFInfo
- Publication number
- CN1318662C CN1318662C CNB028285980A CN02828598A CN1318662C CN 1318662 C CN1318662 C CN 1318662C CN B028285980 A CNB028285980 A CN B028285980A CN 02828598 A CN02828598 A CN 02828598A CN 1318662 C CN1318662 C CN 1318662C
- Authority
- CN
- China
- Prior art keywords
- cdte
- monocrystalline
- raw material
- concn
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
样品No. | 测定位置 | 氯浓度(ppmwt) | 电阻率(Ω·cm) |
1 | 上 | 4.5 | 2.1×109 |
中 | 5.0 | 1.8×109 | |
下 | 5.3 | 1.9×109 |
样品No. | 测定位置 | 氯浓度(ppmwt) | 电阻率(Ω·cm) |
2 | 上 | 3.6 | 5.1×108 |
中 | 4.4 | 6.4×108 | |
下 | 7.0 | 7.1×108 |
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP76313/2002 | 2002-03-19 | ||
JP2002076313A JP4083449B2 (ja) | 2002-03-19 | 2002-03-19 | CdTe単結晶の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1623014A CN1623014A (zh) | 2005-06-01 |
CN1318662C true CN1318662C (zh) | 2007-05-30 |
Family
ID=28035436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028285980A Expired - Lifetime CN1318662C (zh) | 2002-03-19 | 2002-11-29 | CdTe单晶和CdTe多晶及其制备方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7211142B2 (zh) |
EP (2) | EP2336400A3 (zh) |
JP (1) | JP4083449B2 (zh) |
KR (1) | KR100876925B1 (zh) |
CN (1) | CN1318662C (zh) |
IL (2) | IL163727A0 (zh) |
TW (1) | TWI263712B (zh) |
WO (1) | WO2003078703A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010078816A1 (zh) * | 2008-12-29 | 2010-07-15 | 华为技术有限公司 | 瞬态信号的编码方法和装置、解码方法和装置及处理系统 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4879750B2 (ja) * | 2004-11-18 | 2012-02-22 | Jx日鉱日石金属株式会社 | CdTe系化合物半導体単結晶 |
CA2510415C (en) * | 2005-06-21 | 2012-08-14 | Redlen Technologies Inc. | A cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds |
CN101220502B (zh) * | 2007-09-30 | 2010-05-19 | 西北工业大学 | 垂直布里奇曼生长炉及炉内温度场优化方法 |
JP4734597B2 (ja) * | 2008-02-12 | 2011-07-27 | 株式会社島津製作所 | 放射線検出器の製造方法及び、放射線検出器並びに放射線撮像装置 |
EP2333584B1 (en) * | 2008-09-10 | 2014-11-19 | Shimadzu Corporation | Radiation detector |
CA2649322C (en) * | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
US8563940B2 (en) | 2009-04-03 | 2013-10-22 | Shimadzu Corporation | Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus |
JP5469742B2 (ja) * | 2010-03-29 | 2014-04-16 | Jx日鉱日石金属株式会社 | Ii−vi族化合物半導体多結晶の合成方法 |
US8871552B2 (en) * | 2010-07-06 | 2014-10-28 | Shimadzu Corporation | Method of manufacturing radiation detector |
JP2013178098A (ja) * | 2010-07-06 | 2013-09-09 | Shimadzu Corp | 放射線検出器およびそれを製造する方法 |
CN103074668A (zh) * | 2013-01-11 | 2013-05-01 | 元亮科技有限公司 | 水平温度梯度法生长大尺寸高温晶体的装置及方法 |
JP6018532B2 (ja) * | 2013-03-29 | 2016-11-02 | Jx金属株式会社 | 半導体ウエハ、放射線検出素子、放射線検出器、および化合物半導体単結晶の製造方法 |
JP6149103B2 (ja) * | 2013-03-29 | 2017-06-14 | Jx金属株式会社 | 光電変換素子用化合物半導体単結晶インゴット、光電変換素子、および光電変換素子用化合物半導体単結晶インゴットの製造方法 |
CN103409800B (zh) * | 2013-07-17 | 2016-01-20 | 武汉高芯科技有限公司 | 大直径碲化镉或碲锌镉多晶棒料合成装置及制备方法 |
CN105401216A (zh) * | 2015-12-15 | 2016-03-16 | 河南西格马晶体科技有限公司 | 一种温场梯度水平移动法制备片状单晶的方法及装置 |
WO2018201308A1 (en) * | 2017-05-03 | 2018-11-08 | Shenzhen Xpectvision Technology Co., Ltd. | Method of making radiation detector |
CN107201548B (zh) * | 2017-05-09 | 2019-07-19 | 西北工业大学 | 碲化锌单晶的制备方法 |
CN107675251B (zh) * | 2017-09-28 | 2019-07-16 | 哈尔滨工业大学 | 一种高纯硒化镉多晶材料的气相合成方法 |
CN108624949B (zh) * | 2018-04-26 | 2021-02-09 | 长安大学 | 一种碲镁镉单晶材料的制备方法、单晶材料及其应用 |
CN111809240B (zh) * | 2020-06-12 | 2022-01-18 | 先导薄膜材料(广东)有限公司 | 一种高纯碲化镉的制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN85101849A (zh) * | 1985-04-01 | 1986-07-30 | 中国科学院长春物理研究所 | 制备高纯度ⅱ-ⅵ族化合物的新方法 |
JPH0497992A (ja) * | 1990-08-10 | 1992-03-30 | Nikko Kyodo Co Ltd | CdTe単結晶の製造方法 |
JP2517803B2 (ja) * | 1991-06-07 | 1996-07-24 | 株式会社ジャパンエナジー | Ii−vi族化合物半導体多結晶の合成方法 |
JPH08259399A (ja) * | 1995-03-28 | 1996-10-08 | Japan Energy Corp | CdTe結晶の製造方法 |
EP1013801A1 (en) * | 1998-12-21 | 2000-06-28 | PIRELLI CAVI E SISTEMI S.p.A. | Process and apparatus for synthesizing and growing crystals |
JP2001335400A (ja) * | 2000-05-24 | 2001-12-04 | Furukawa Co Ltd | CdTe単結晶の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4141777A (en) * | 1974-07-19 | 1979-02-27 | Matveev Oleg A | Method of preparing doped single crystals of cadmium telluride |
US3962669A (en) * | 1974-07-24 | 1976-06-08 | Tyco Laboratories, Inc. | Electrical contact structure for semiconductor body |
US3999071A (en) * | 1975-08-26 | 1976-12-21 | Etat Francais | Nuclear detectors sensitive to alpha, beta, and gamma rays and to thermal neutrons and to methods of treatment of crystals of such detectors |
JPH0282573A (ja) * | 1988-09-20 | 1990-03-23 | Canon Inc | 光電変換装置 |
JPH03177394A (ja) * | 1989-12-07 | 1991-08-01 | Hitachi Cable Ltd | 化合物半導体の結晶引上装置 |
JPH03295899A (ja) | 1990-04-10 | 1991-12-26 | Nikko Kyodo Co Ltd | CdTe単結晶の製造方法 |
JPH05283729A (ja) | 1992-03-30 | 1993-10-29 | Japan Energy Corp | 半導体装置の製造方法 |
JPH06345598A (ja) * | 1993-06-04 | 1994-12-20 | Japan Energy Corp | 放射線検出素子用CdTe結晶およびその製造方法 |
JPH0769778A (ja) * | 1993-09-03 | 1995-03-14 | Sumitomo Metal Ind Ltd | 単結晶成長装置 |
JP3708142B2 (ja) | 1994-03-09 | 2005-10-19 | ナトコ株式会社 | 液晶用スペーサの製造方法および液晶用スペーサ |
JPH07300387A (ja) | 1994-04-28 | 1995-11-14 | Japan Energy Corp | 化合物半導体結晶の製造方法 |
JP2844430B2 (ja) | 1995-02-16 | 1999-01-06 | 株式会社ジャパンエナジー | 単結晶の成長方法 |
JPH09124310A (ja) * | 1995-10-27 | 1997-05-13 | Sumitomo Metal Mining Co Ltd | CdTe結晶の製造方法 |
JPH11255575A (ja) * | 1998-03-12 | 1999-09-21 | Super Silicon Kenkyusho:Kk | 単結晶引上げ装置及びその冷却方法 |
CA2292853A1 (en) | 1998-12-21 | 2000-06-21 | Pirelli Cavi E Sistemi S.P.A. | Process and apparatus for synthesizing and growing crystals |
-
2002
- 2002-03-19 JP JP2002076313A patent/JP4083449B2/ja not_active Expired - Lifetime
- 2002-11-29 EP EP11159885A patent/EP2336400A3/en not_active Withdrawn
- 2002-11-29 EP EP02783694A patent/EP1508632B1/en not_active Expired - Lifetime
- 2002-11-29 IL IL16372702A patent/IL163727A0/xx active IP Right Grant
- 2002-11-29 US US10/505,588 patent/US7211142B2/en not_active Expired - Lifetime
- 2002-11-29 WO PCT/JP2002/012486 patent/WO2003078703A1/ja active Application Filing
- 2002-11-29 KR KR1020047014004A patent/KR100876925B1/ko active IP Right Grant
- 2002-11-29 CN CNB028285980A patent/CN1318662C/zh not_active Expired - Lifetime
-
2003
- 2003-03-18 TW TW092106101A patent/TWI263712B/zh not_active IP Right Cessation
-
2004
- 2004-08-25 IL IL163727A patent/IL163727A/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN85101849A (zh) * | 1985-04-01 | 1986-07-30 | 中国科学院长春物理研究所 | 制备高纯度ⅱ-ⅵ族化合物的新方法 |
JPH0497992A (ja) * | 1990-08-10 | 1992-03-30 | Nikko Kyodo Co Ltd | CdTe単結晶の製造方法 |
JP2517803B2 (ja) * | 1991-06-07 | 1996-07-24 | 株式会社ジャパンエナジー | Ii−vi族化合物半導体多結晶の合成方法 |
JPH08259399A (ja) * | 1995-03-28 | 1996-10-08 | Japan Energy Corp | CdTe結晶の製造方法 |
EP1013801A1 (en) * | 1998-12-21 | 2000-06-28 | PIRELLI CAVI E SISTEMI S.p.A. | Process and apparatus for synthesizing and growing crystals |
JP2001335400A (ja) * | 2000-05-24 | 2001-12-04 | Furukawa Co Ltd | CdTe単結晶の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010078816A1 (zh) * | 2008-12-29 | 2010-07-15 | 华为技术有限公司 | 瞬态信号的编码方法和装置、解码方法和装置及处理系统 |
US8063809B2 (en) | 2008-12-29 | 2011-11-22 | Huawei Technologies Co., Ltd. | Transient signal encoding method and device, decoding method and device, and processing system |
Also Published As
Publication number | Publication date |
---|---|
JP4083449B2 (ja) | 2008-04-30 |
EP1508632A4 (en) | 2008-10-15 |
TW200307066A (en) | 2003-12-01 |
KR20040089713A (ko) | 2004-10-21 |
EP2336400A2 (en) | 2011-06-22 |
EP1508632B1 (en) | 2012-02-29 |
EP1508632A1 (en) | 2005-02-23 |
IL163727A0 (en) | 2005-12-18 |
TWI263712B (en) | 2006-10-11 |
US20050170649A1 (en) | 2005-08-04 |
CN1623014A (zh) | 2005-06-01 |
KR100876925B1 (ko) | 2009-01-07 |
WO2003078703A1 (fr) | 2003-09-25 |
JP2003277197A (ja) | 2003-10-02 |
EP2336400A3 (en) | 2011-11-23 |
IL163727A (en) | 2007-10-31 |
US7211142B2 (en) | 2007-05-01 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corp. Address before: Tokyo, Japan Patentee before: Nippon Mining & Metals Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS Corp. Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corp. |
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CX01 | Expiry of patent term | ||
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Granted publication date: 20070530 |