IL163727A0 - CdTe single crystal and CdTe polycrystal, and method for preparation thereof - Google Patents

CdTe single crystal and CdTe polycrystal, and method for preparation thereof

Info

Publication number
IL163727A0
IL163727A0 IL16372702A IL16372702A IL163727A0 IL 163727 A0 IL163727 A0 IL 163727A0 IL 16372702 A IL16372702 A IL 16372702A IL 16372702 A IL16372702 A IL 16372702A IL 163727 A0 IL163727 A0 IL 163727A0
Authority
IL
Israel
Prior art keywords
cdte
preparation
single crystal
polycrystal
cdte single
Prior art date
Application number
IL16372702A
Other languages
English (en)
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of IL163727A0 publication Critical patent/IL163727A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL16372702A 2002-03-19 2002-11-29 CdTe single crystal and CdTe polycrystal, and method for preparation thereof IL163727A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002076313A JP4083449B2 (ja) 2002-03-19 2002-03-19 ＣｄＴｅ単結晶の製造方法
PCT/JP2002/012486 WO2003078703A1 (fr) 2002-03-19 2002-11-29 Monocristal cdte et polycristal cdte et leur procede de fabrication

Publications (1)

Publication Number Publication Date
IL163727A0 true IL163727A0 (en) 2005-12-18

Family

ID=28035436

Family Applications (2)

Application Number Title Priority Date Filing Date
IL16372702A IL163727A0 (en) 2002-03-19 2002-11-29 CdTe single crystal and CdTe polycrystal, and method for preparation thereof
IL163727A IL163727A (en) 2002-03-19 2004-08-25 CdTe single and multi-crystal CdTe server and method of preparation

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL163727A IL163727A (en) 2002-03-19 2004-08-25 CdTe single and multi-crystal CdTe server and method of preparation

Country Status (8)

Country Link
US (1) US7211142B2 (xx)
EP (2) EP1508632B1 (xx)
JP (1) JP4083449B2 (xx)
KR (1) KR100876925B1 (xx)
CN (1) CN1318662C (xx)
IL (2) IL163727A0 (xx)
TW (1) TWI263712B (xx)
WO (1) WO2003078703A1 (xx)

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JP4879750B2 (ja) * 2004-11-18 2012-02-22 Ｊｘ日鉱日石金属株式会社 ＣｄＴｅ系化合物半導体単結晶
CA2510415C (en) * 2005-06-21 2012-08-14 Redlen Technologies Inc. A cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds
CN101220502B (zh) * 2007-09-30 2010-05-19 西北工业大学 垂直布里奇曼生长炉及炉内温度场优化方法
US8405037B2 (en) 2008-02-12 2013-03-26 Shimadzu Corporation Radiation detector manufacturing method, a radiation detector, and a radiographic apparatus
US8564082B2 (en) * 2008-09-10 2013-10-22 Shimadzu Corporation Radiation detector
CA2649322C (en) * 2008-09-30 2011-02-01 5N Plus Inc. Cadmium telluride production process
CN101770776B (zh) 2008-12-29 2011-06-08 华为技术有限公司 瞬态信号的编码方法和装置、解码方法和装置及处理系统
WO2010113222A1 (ja) 2009-04-03 2010-10-07 株式会社島津製作所 放射線検出器の製造方法および放射線検出器並びに放射線撮像装置
CN102859051B (zh) * 2010-03-29 2016-05-04 吉坤日矿日石金属株式会社 Ii-vi族化合物半导体多晶的合成方法
JP2013178098A (ja) * 2010-07-06 2013-09-09 Shimadzu Corp 放射線検出器およびそれを製造する方法
CN103081127B (zh) * 2010-07-06 2016-03-30 株式会社岛津制作所 放射线检测器的制造方法
CN103074668A (zh) * 2013-01-11 2013-05-01 元亮科技有限公司 水平温度梯度法生长大尺寸高温晶体的装置及方法
JP6149103B2 (ja) * 2013-03-29 2017-06-14 Ｊｘ金属株式会社 光電変換素子用化合物半導体単結晶インゴット、光電変換素子、および光電変換素子用化合物半導体単結晶インゴットの製造方法
JP6018532B2 (ja) * 2013-03-29 2016-11-02 Ｊｘ金属株式会社 半導体ウエハ、放射線検出素子、放射線検出器、および化合物半導体単結晶の製造方法
CN103409800B (zh) * 2013-07-17 2016-01-20 武汉高芯科技有限公司 大直径碲化镉或碲锌镉多晶棒料合成装置及制备方法
CN105401216A (zh) * 2015-12-15 2016-03-16 河南西格马晶体科技有限公司 一种温场梯度水平移动法制备片状单晶的方法及装置
WO2018201308A1 (en) * 2017-05-03 2018-11-08 Shenzhen Xpectvision Technology Co., Ltd. Method of making radiation detector
CN107201548B (zh) * 2017-05-09 2019-07-19 西北工业大学 碲化锌单晶的制备方法
CN107675251B (zh) * 2017-09-28 2019-07-16 哈尔滨工业大学 一种高纯硒化镉多晶材料的气相合成方法
CN108624949B (zh) * 2018-04-26 2021-02-09 长安大学 一种碲镁镉单晶材料的制备方法、单晶材料及其应用
CN111809240B (zh) * 2020-06-12 2022-01-18 先导薄膜材料（广东）有限公司 一种高纯碲化镉的制备方法

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US3962669A (en) * 1974-07-24 1976-06-08 Tyco Laboratories, Inc. Electrical contact structure for semiconductor body
US3999071A (en) * 1975-08-26 1976-12-21 Etat Francais Nuclear detectors sensitive to alpha, beta, and gamma rays and to thermal neutrons and to methods of treatment of crystals of such detectors
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JPH07108839B2 (ja) 1990-08-10 1995-11-22 株式会社ジャパンエナジー ＣｄＴｅ単結晶の製造方法
JP2517803B2 (ja) 1991-06-07 1996-07-24 株式会社ジャパンエナジー Ｉｉ−ｖｉ族化合物半導体多結晶の合成方法
JPH05283729A (ja) 1992-03-30 1993-10-29 Japan Energy Corp 半導体装置の製造方法
JPH06345598A (ja) * 1993-06-04 1994-12-20 Japan Energy Corp 放射線検出素子用ＣｄＴｅ結晶およびその製造方法
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Also Published As

Publication number Publication date
TW200307066A (en) 2003-12-01
WO2003078703A1 (fr) 2003-09-25
JP4083449B2 (ja) 2008-04-30
EP1508632A4 (en) 2008-10-15
EP1508632B1 (en) 2012-02-29
US7211142B2 (en) 2007-05-01
EP2336400A3 (en) 2011-11-23
CN1623014A (zh) 2005-06-01
EP1508632A1 (en) 2005-02-23
TWI263712B (en) 2006-10-11
US20050170649A1 (en) 2005-08-04
EP2336400A2 (en) 2011-06-22
JP2003277197A (ja) 2003-10-02
KR20040089713A (ko) 2004-10-21
CN1318662C (zh) 2007-05-30
IL163727A (en) 2007-10-31
KR100876925B1 (ko) 2009-01-07

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