CN100394578C - 含有一组电路元件和一组隔离沟槽的集成电路的形成方法 - Google Patents

含有一组电路元件和一组隔离沟槽的集成电路的形成方法 Download PDF

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Publication number
CN100394578C
CN100394578C CNB2004100473340A CN200410047334A CN100394578C CN 100394578 C CN100394578 C CN 100394578C CN B2004100473340 A CNB2004100473340 A CN B2004100473340A CN 200410047334 A CN200410047334 A CN 200410047334A CN 100394578 C CN100394578 C CN 100394578C
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stress
degrees celsius
gdynes
annealing
heating
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Expired - Fee Related
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Chinese (zh)
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CN1574277A (zh
Inventor
迈克尔·P·别尔彦斯基
拉曼·迪瓦卡若尼
拉尔蒂斯·伊科诺米克斯
拉甲若·加米
小肯尼思·T·赛特米尔
帕卓克·C·谢弗
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International Business Machines Corp
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    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10L—FUELS NOT OTHERWISE PROVIDED FOR; NATURAL GAS; SYNTHETIC NATURAL GAS OBTAINED BY PROCESSES NOT COVERED BY SUBCLASSES C10G OR C10K; LIQUIFIED PETROLEUM GAS; USE OF ADDITIVES TO FUELS OR FIRES; FIRE-LIGHTERS
    • C10L1/00—Liquid carbonaceous fuels
    • C10L1/32—Liquid carbonaceous fuels consisting of coal-oil suspensions or aqueous emulsions or oil emulsions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/40—Mixing liquids with liquids; Emulsifying
    • B01F23/41—Emulsifying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/60—Pump mixers, i.e. mixing within a pump
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB2004100473340A 2003-06-03 2004-06-02 含有一组电路元件和一组隔离沟槽的集成电路的形成方法 Expired - Fee Related CN100394578C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/250,092 US6869860B2 (en) 2003-06-03 2003-06-03 Filling high aspect ratio isolation structures with polysilazane based material
US10/250,092 2003-06-03

Publications (2)

Publication Number Publication Date
CN1574277A CN1574277A (zh) 2005-02-02
CN100394578C true CN100394578C (zh) 2008-06-11

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CNB2004100473340A Expired - Fee Related CN100394578C (zh) 2003-06-03 2004-06-02 含有一组电路元件和一组隔离沟槽的集成电路的形成方法

Country Status (4)

Country Link
US (2) US6869860B2 (https=)
JP (1) JP2004363595A (https=)
KR (1) KR100562236B1 (https=)
CN (1) CN100394578C (https=)

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Also Published As

Publication number Publication date
KR100562236B1 (ko) 2006-03-22
US20040248374A1 (en) 2004-12-09
US6869860B2 (en) 2005-03-22
KR20040104398A (ko) 2004-12-10
JP2004363595A (ja) 2004-12-24
US20050179112A1 (en) 2005-08-18
CN1574277A (zh) 2005-02-02

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