CN100378990C - 低k和超低k SiCOH介质膜及其制作方法 - Google Patents

低k和超低k SiCOH介质膜及其制作方法 Download PDF

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CN100378990C
CN100378990C CNB2005100043046A CN200510004304A CN100378990C CN 100378990 C CN100378990 C CN 100378990C CN B2005100043046 A CNB2005100043046 A CN B2005100043046A CN 200510004304 A CN200510004304 A CN 200510004304A CN 100378990 C CN100378990 C CN 100378990C
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dielectric material
gpa
dielectric
hardness
modulus
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CN1645608A (zh
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斯蒂芬·M.·盖茨
克里斯托斯·D.·迪米特拉克浦斯
阿尔弗雷德·格里尔
桑·范·恩古叶恩
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
CNB2005100043046A 2004-01-16 2005-01-14 低k和超低k SiCOH介质膜及其制作方法 Expired - Lifetime CN100378990C (zh)

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Application Number Priority Date Filing Date Title
US10/758,724 US7030468B2 (en) 2004-01-16 2004-01-16 Low k and ultra low k SiCOH dielectric films and methods to form the same
US10/758,724 2004-01-16

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CN1645608A CN1645608A (zh) 2005-07-27
CN100378990C true CN100378990C (zh) 2008-04-02

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JP (2) JP4755831B2 (https=)
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TW (1) TWI324381B (https=)

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